TWI673869B - 高壓半導體裝置及其製造方法 - Google Patents
高壓半導體裝置及其製造方法 Download PDFInfo
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Abstract
高壓半導體裝置包含半導體基底,具有第一導電類型,第一高壓井區設置於半導體基底內且具有與第一導電類型相反的第二導電類型,第一埋層設置於第一高壓井區上且具有第一導電類型,第二埋層和第三埋層設置於第一高壓井區上且具有第二導電類型,其中第一埋層位於第二埋層與第三埋層之間,磊晶層設置於半導體基底上,其中第一埋層、第二埋層和第三埋層自半導體基底延伸至磊晶層內,以及源極區和汲極區設置於第一埋層上且具有第二導電類型。
Description
本發明是關於半導體裝置,特別是關於高壓半導體裝置及其製造方法。
高壓半導體裝置技術適用於高電壓與高功率的積體電路領域。傳統高壓半導體裝置,例如垂直式擴散金氧半導體(vertically diffused metal oxide semiconductor,VDMOS)電晶體及水平擴散金氧半導體(laterally diffused metal oxide semiconductor,LDMOS)電晶體,主要用於18V以上的元件應用領域。高壓裝置技術的優點在於符合成本效益,且易相容於其它製程,已廣泛應用於顯示器驅動IC元件、電源供應器、電力管理、通訊、車用電子或工業控制等領域中。
雖然現存的高壓半導體裝置已逐步滿足它們既定的用途,但它們仍未在各方面皆徹底的符合要求。舉例來說,若要將原已使用於低壓裝置的元件結構與功能應用在高壓裝置中,元件需要重新設計且其占用面積增加,無法符合目前高壓半導體裝置微型化且高崩潰電壓及低導通電阻的需求。因此,關於高壓半導體裝置和製造技術仍有一些問題需要克服。
本發明提供了高壓半導體裝置的實施例,特別是水平擴散金氧半導體(LDMOS)電晶體的實施例。在本發明的一些實施例中,在半導體基底內設置第一高壓井區,半導體基底具有第一導電類型,且第一高壓井區具有與第一導電類型相反的第二導電類型。在第一高壓井區上設置第一埋層、第二埋層和第三埋層,第一埋層位於第二埋層與第三埋層之間,且第一埋層具有第一導電類型,第二埋層和第三埋層具有第二導電類型。此外,在第一埋層上設置具有第二導電類型的第二高壓井區,且在第二高壓井區內設置具有第二導電類型的源極區和汲極區。
藉由將第一高壓井區延伸至第二埋層和第三埋層下方,可在第一高壓井區上形成與半導體基底完全隔離(fully isolated)且具有高崩潰電壓的半導體裝置。再者,藉由在第一高壓井區與第二高壓井區之間設置第一埋層,可在利用第一高壓井區使得半導體裝置可耐受高電壓的前提下提供半導體裝置本身運作所需的電壓。擁有高崩潰電壓的水平擴散金氧半導體電晶體可被廣泛地應用於電位轉換器(level shifter)及高壓積體電路(high voltage integrated circuit,HVIC)晶片中。此外,由於源極區和汲極區皆設置在第二高壓井區內,可降低半導體裝置的導通電阻(on resistance,Ron),進而提高水平擴散金氧半導體電晶體的導通電流。
根據一些實施例,提供高壓半導體裝置。高壓半導體裝置包含半導體基底,具有第一導電類型,以及第一高壓井區,設置於半導體基底內且具有與第一導電類型相反的第二
導電類型。高壓半導體裝置也包含第一埋層,設置於第一高壓井區上且具有第一導電類型,以及第二埋層和第三埋層,設置於第一高壓井區上且具有第二導電類型,其中第一埋層位於第二埋層與第三埋層之間。高壓半導體裝置更包含磊晶層,設置於半導體基底上,其中第一埋層、第二埋層和第三埋層自半導體基底延伸至磊晶層內,以及源極區和汲極區,設置於第一埋層上且具有第二導電類型。
根據一些實施例,提供高壓半導體裝置。高壓半導體裝置包含半導體基底,具有第一導電類型,以及第一高壓井區,設置於半導體基底內且具有與第一導電類型相反的第二導電類型。高壓半導體裝置也包含第一埋層,設置於第一高壓井區上且具有第一導電類型,以及第二高壓井區,設置於第一埋層上且具有第二導電類型。高壓半導體裝置更包含磊晶層,設置於半導體基底上,其中第一埋層的一部分和第二高壓井區位於磊晶層內,以及源極區和第一汲極區,設置於第二高壓井區內且具有第二導電類型。
根據一些實施例,提供高壓半導體裝置的製造方法。此方法包含在半導體基底內形成第一高壓井區,其中半導體基底具有第一導電類型,且第一高壓井區具有與第一導電類型相反的第二導電類型。方法也包含在第一高壓井區上形成第一埋層,其中第一埋層具有第一導電類型,以及在第一埋層的兩側分別形成第二埋層和第三埋層,其中第二埋層和第三埋層具有第二導電類型。方法更包含在半導體基底上形成磊晶層,其中第一埋層、第二埋層和第三埋層延伸至磊晶層內,以及在
磊晶層內和第一埋層上形成源極區和汲極區,其中源極區和汲極區具有第二導電類型。
本發明的半導體裝置可應用於多種類型的半導體裝置,為讓本發明之特徵和優點能更明顯易懂,下文特舉出應用於水平擴散金氧半導體電晶體之實施例,並配合所附圖式,作詳細說明如下。
100、200、300‧‧‧高壓半導體裝置
101‧‧‧半導體基底
103、203、303‧‧‧第一高壓井區
105a‧‧‧第二埋層
105b‧‧‧第三埋層
107‧‧‧第一埋層
109‧‧‧磊晶層
111a、111b‧‧‧高壓井區
113a‧‧‧第四高壓井區
113b‧‧‧第六高壓井區
115a‧‧‧第三高壓井區
115b‧‧‧第五高壓井區
117‧‧‧第二高壓井區
121a、121b、123‧‧‧井區
131a、131b、133a、133b、135a、135b‧‧‧隔離結構
141a、141b‧‧‧閘極介電層
142a、142b‧‧‧閘極結構
143a、143b‧‧‧閘極電極層
145a、145b、145c、145d‧‧‧間隙物
151a、151b、153a、153b、155a、155b、157‧‧‧摻雜區
203a‧‧‧第一漸細部
203b‧‧‧第二漸細部
303a、303b、303c、303d、303e、303f、303g、303h、303i、303j、303k‧‧‧區段
305a、305b、305c、305d、305e、305f、305g、305h、305i、305j‧‧‧連接部
D‧‧‧距離
D1、D2、E1、E2、E3、E4、G1、G2、S‧‧‧電極
T‧‧‧厚度
藉由以下的詳述配合所附圖式,我們能更加理解本發明實施例的觀點。值得注意的是,根據工業上的標準慣例,一些部件(feature)可能沒有按照比例繪製。事實上,為了能清楚地討論,不同部件的尺寸可能被增加或減少。第1A-1F圖是根據本發明的一些實施例,顯示形成第1F圖中高壓半導體裝置之各個階段的剖面示意圖;第2圖是根據本發明的另一些實施例,顯示高壓半導體裝置的剖面示意圖;以及第3圖是根據本發明的又一些實施例,顯示高壓半導體裝置的剖面示意圖。
以下揭露提供了很多不同的實施例或範例,用於實施所提供的高壓半導體裝置之不同元件。各元件和其配置的具體範例描述如下,以簡化本發明實施例。當然,這些僅僅是範例,並非用以限定本發明。舉例而言,敘述中若提及第一元件形成在第二元件之上,可能包含第一和第二元件直接接觸的實施例,也可能包含額外的元件形成在第一和第二元件之間,
使得它們不直接接觸的實施例。此外,本發明實施例可能在不同的範例中重複參考數字及/或字母。如此重複是為了簡明和清楚,而非用以表示所討論的不同實施例及/或形態之間的關係。
以下描述實施例的一些變化。在不同圖式和說明的實施例中,相似的參考數字被用來標明相似的元件。可以理解的是,在方法的前、中、後可以提供額外的操作,且一些敘述的操作可為了該方法的其他實施例被取代或刪除。
第1A-1F圖是根據本發明的一些實施例,顯示形成第1F圖中高壓半導體裝置100之各個階段的剖面示意圖。
根據一些實施例,如第1A圖所示,在半導體基底101內形成第一高壓井區103。半導體基底101可由矽或其他半導體材料製成,或者,半導體基底101可包含其他元素半導體材料,例如鍺(Ge)。一些實施例中,半導體基底101由化合物半導體製成,例如碳化矽、氮化鎵、砷化鎵、砷化銦或磷化銦。一些實施例中,半導體基底101由合金半導體製成,例如矽鍺、碳化矽鍺、磷化砷鎵或磷化銦鎵。
此外,半導體基底101可包含絕緣層上覆矽(silicon-on-insulator,SOI)基底。一些實施例中,半導體基底101可為輕摻雜之P型或N型基底。在本實施例中,半導體基底101為P型,其內部具有P型摻質,例如硼(B),且後續形成的高壓半導體裝置100可包含在半導體基底101上的N型的水平擴散金氧半導體電晶體。
一些實施例中,第一高壓井區103具有與半導體
基底101相反的導電類型。在本實施例中,半導體基底為P型,且高壓井區103為N型。此外,第一高壓井區103的形成方法可包含利用遮罩在半導體基底101內實施離子植入製程,離子植入N型摻質,例如磷(P)或砷(As),且摻質濃度在約1x1017原子/立方公分(atoms/cm3)至約5x1018原子/立方公分(atoms/cm3)的範圍內。然後,將植入的離子驅入(drive-in)半導體基底101內以形成第一高壓井區103。
此外,一些實施例中,第一高壓井區103垂直於半導體基底101之頂面的厚度T大於約8微米。
根據一些實施例,如第1B圖所示,在半導體基底101內和第一高壓井區103內形成第一埋層107、第二埋層105a和第三埋層105b。明確而言,第一埋層107、第二埋層105a和第三埋層105b係形成於半導體基底101和第一高壓井區103的上部,靠近半導體基底101之頂面的位置。在形成第一埋層107、第二埋層105a和第三埋層105b之後,第一埋層107、第二埋層105a和第三埋層105b是位於剩下的第一高壓井區103上。在本實施例中,第一埋層107為P型,第二埋層105a和第三埋層105b為N型。第一埋層107、第二埋層105a和第三埋層105b的形成方法相同或相似於第一高壓井區103的形成方法,在此便不重複敘述。一些實施例中,第二埋層105a和第三埋層105b可在同一製程中形成,且可在第一埋層107之前或之後形成。
第二埋層105a和第三埋層105b分別位於第一埋層107的兩側。亦即,第一埋層107位於第二埋層105a和第
三埋層105b之間。一些實施例中,第一埋層107夾設於第二埋層105a和第三埋層105b之間,且第一高壓井區103延伸至第二埋層105a和第三埋層105b下。明確而言,第一埋層107於半導體基底101之頂面的水平投影完全位於第一高壓井區103於半導體基底101之頂面的水平投影的範圍內,且第一高壓井區103於半導體基底101之頂面的水平投影與第二埋層105a和第三埋層105b於半導體基底101之頂面的水平投影部分重疊。
此外,一些實施例中,第一埋層107、第二埋層105a和第三埋層105b垂直於半導體基底101之頂面的厚度D大於約1微米。
接著,如第1C圖所示,在半導體基底101上形成磊晶層109。一些實施例中,磊晶層109可為N型或P型。磊晶層109可藉由金屬有機物化學氣相沉積法(metal organic chemical vapor deposition,MOCVD)、電漿增強化學氣相沉積法(plasma-enhanced CVD,PECVD)、分子束磊晶法(molecular beam epitaxy,MBE)、氫化物氣相磊晶法(hydride vapour phase epitaxy,HVPE)、液相磊晶法(liquid phase epitaxy,LPE)、氯化物氣相磊晶法(chloride-vapor phase epitaxy,Cl-VPE)、其他相似的製程方法或前述之組合以形成。
一些實施例中,由於磊晶層109係在高溫的條件下形成,故先前植入第一埋層107、第二埋層105a和第三埋層105b內的離子會擴散進入磊晶層109內,如第1C圖所示,第一埋層107、第二埋層105a和第三埋層105b位於半導體基底
101和磊晶層109的界面附近,且分別具有一部分在半導體基底101內,以及另一部分在磊晶層109內。
一些實施例中,第一埋層107的摻質濃度在約1x1017原子/立方公分至約1x1019原子/立方公分的範圍內,且第二埋層105a和第三埋層105b的摻質濃度在約5x1016原子/立方公分至約1x1019原子/立方公分的範圍內。值得注意的是,第一埋層107的摻質濃度大於第一高壓井區103的摻質濃度。一些實施例中,第二埋層105a和第三埋層105b的摻質濃度大於第一高壓井區103的摻質濃度。此外,第一埋層107的摻質濃度大於輕摻雜之半導體基底101的摻質濃度。
再參見第1C圖,在磊晶層109內形成第二高壓井區117、第三高壓井區115a、第四高壓井區113a、第五高壓井區115b和第六高壓井區113b。第二高壓井區117、第三高壓井區115a和第五高壓井區115b位於第一埋層107上且鄰接第一埋層107。第四高壓井區113a位於第二埋層105a上且鄰接第二埋層105a。第六高壓井區113b位於第三埋層105b上且鄰接第三埋層105b。
在本實施例中,第一埋層107與第二埋層105a之間的界面對齊第三高壓井區115a與第四高壓井區113a之間的界面,且第一埋層107與第三埋層105b之間的界面對齊第五高壓井區115b與第六高壓井區113b之間的界面。然而,前述之位置關係可不限於此。
一些實施例中,第二高壓井區117具有相同於第一高壓井區103的導電類型。在本實施例中,第二高壓井區
117、第四高壓井區113a和第六高壓井區113b為N型,且第三高壓井區115a和第五高壓井區115b為P型。第二高壓井區117、第三高壓井區115a、第四高壓井區113a、第五高壓井區115b和第六高壓井區113b的形成方法相同或相似於第一高壓井區103的形成方法,在此便不重複敘述。值得注意的是,第一埋層107夾設於第一高壓井區103與第二高壓井區117之間。
此外,可選擇性地在磊晶層109內形成高壓井區111a和高壓井區111b。一些實施例中,高壓井區111a和高壓井區111b為P型。高壓井區111a和高壓井區111b的形成方法相同或相似於第一高壓井區103的形成方法,在此便不重複敘述。
根據一些實施例,如第1D圖所示,在第二高壓井區117內形成井區121a、井區123和井區121b(井區123又稱為基體(body)區)。井區121a和井區121b具有相同的導電類型,而井區121a的導電類型與井區123的導電類型相反。在本實施例中,井區121a和井區121b為N型,而井區123為P型。井區121a、井區123和井區121b的形成方法相同或相似於第一高壓井區103的形成方法,在此便不重複敘述。
一些實施例中,井區121a、井區123和井區121b的摻雜濃度大於第二高壓井區117的摻質濃度。舉例而言,井區121a、井區123和井區121b的摻雜濃度在約5x1016原子/立方公分至約5x1018原子/立方公分的範圍內,且第二高壓井區117的摻質濃度在約1x1016原子/立方公分至約1x1018原子/立方公分的範圍內。
在第二高壓井區117內形成井區121a、井區123和井區121b之後,在磊晶層109上形成隔離結構131a、131b、133a、133b、135a和135b。明確而言,隔離結構131a、131b、133a、133b、135a和135b的一部分係嵌入磊晶層109內。一些實施例中,隔離結構131a、131b、133a、133b、135a和135b由氧化矽製成,且為藉由熱氧化法所形成的矽局部氧化(local oxidation of silicon,LOCOS)隔離結構。在其他實施例中,隔離結構131a、131b、133a、133b、135a和135b可以是藉由蝕刻和沉積製程所形成的淺溝槽隔離(shallow trench isolation,STI)結構。
然後,如第1E圖所示,在形成隔離結構131a、131b、133a、133b、135a和135b之後,在磊晶層109上形成閘極結構142a(又稱為第一閘極結構)和閘極結構142b(又稱為第二閘極結構)。閘極結構142a包含閘極介電層141a和閘極電極層143a,且閘極結構142b包含閘極介電層141b和閘極電極層143b。此外,形成間隙物145a和間隙物145b於閘極結構142a的相對兩側,以及形成間隙物145c和間隙物145d於閘極結構142b的相對兩側。
一些實施例中,閘極結構142a自井區123延伸至隔離結構135a上,且閘極結構142a覆蓋井區123的一部分和第二高壓井區117的一部分。閘極結構142b自井區123延伸至隔離結構135b上,且閘極結構142b覆蓋井區123的一部分和第二高壓井區117的一部分。
閘極結構142a和142b的形成方法可包含依序在
磊晶層109上毯覆性地沈積介電材料層和導電材料層,再藉由微影製程與蝕刻製程將介電材料層和導電材料層圖案化以形成包含閘極介電層141a和閘極電極層143a的閘極結構142a,以及包含閘極介電層141b和閘極電極層143b的閘極結構142b。
此外,介電材料層的材料(即閘極介電層141a和141b的材料)可包含氧化矽、氮化矽、氮氧化矽、高介電常數(high-k)的介電材料、前述之組合或其它合適之介電材料。一些實施例中,介電材料層可藉由化學氣相沉積法(chemical vapor deposition,CVD)或旋轉塗佈(spin coating)以形成。導電材料層的材料(即閘極電極層143a和143b的材料)可包含非晶矽、多晶矽、一或多種金屬、金屬氮化物、導電金屬氧化物、前述之組合或其他合適之導電材料。導電材料層可藉由化學氣相沉積法(CVD)、濺鍍(sputtering)、電阻加熱蒸鍍法、電子束蒸鍍法、或其它合適的沈積方式形成。一些實施例中,間隙物145a、145b、145c和145d可包含絕緣材料,且由沉積製程形成。
根據一些實施例,如第1F圖所示,在高壓井區111a內形成摻雜區151a,在第三高壓井區115a內形成摻雜區153a,在井區121a內形成摻雜區155a,在井區123內形成摻雜區157,在井區121b內形成摻雜區155b,在第五高壓井區115b內形成摻雜區153b,以及在高壓井區111b內形成摻雜區151b。一些實施例中,在形成閘極結構142a和142b之後,形成摻雜區151a、151b、153a、153b、155a、155b、157。
明確而言,摻雜區153a位於隔離結構131a與隔離結構133a之間,摻雜區155a位於隔離結構133a與隔離結構135a之間,摻雜區157位於閘極結構142a與閘極結構142b之間,摻雜區155b位於隔離結構133b與隔離結構135b之間,且摻雜區153b位於隔離結構131b與隔離結構133b之間。
在本實施例中,摻雜區151a、153a、153b和151b為P型,且摻雜區155a、157和155b為N型。摻雜區151a、153a、155a、157、155b、153b和151b的摻雜濃度高於井區121a、123和121b的摻雜濃度。一些實施例中,摻雜區151a、153a、155a、157、155b、153b和151b的摻雜濃度在約5x1018原子/立方公分至約5x1020原子/立方公分的範圍內。
值得注意的是,摻雜區157可作為高壓半導體裝置100的源極區,且摻雜區155a和155b可作為高壓半導體裝置100的汲極區(摻雜區155a又稱為第一汲極區,且摻雜區155b又稱為第二汲極區)。此外,源極區157、第一汲極區155a和第二汲極區155b皆位於第二高壓井區117內,且源極區157、第一汲極區155a、第二汲極區155b和第二高壓井區117具有相同的導電類型。
一些實施例中,高壓半導體裝置100包含設置於磊晶層109上的介電層(未繪示)。磊晶層109上的介電層包含由多個介電材料所形成的多層結構,如氧化矽、氮化矽、氮氧化矽、磷矽酸鹽玻璃(phosphosilicate glass,PSG)、硼磷矽玻璃(borophosphosilicate glass,BPSG)、低介電常數(low-k)介電材料或其他合適的介電材料。此外,高壓半導體裝置100包含設
置於介電層內的內連線結構(未繪示),以及設置於內連線結構上的多個電極。
明確而言,摻雜區151a藉由內連線結構與電極E1(又稱為基底電極)電性連接,摻雜區153a藉由內連線結構與電極E2電性連接,第一汲極區155a藉由內連線結構與電極D1(又稱為第一汲極電極)電性連接,源極區157藉由內連線結構與電極S(又稱為源極電極)電性連接,第二汲極區155b藉由內連線結構與電極D2(又稱為第二汲極電極)電性連接,摻雜區153b藉由內連線結構與電極E3電性連接,摻雜區151b藉由內連線結構與電極E4(又稱為基底電極)電性連接。
此外,閘極結構142a和閘極結構142b藉由內連線結構分別與電極G1和電極G2(G1和G2又稱為閘極電極)電性連接,在形成電極E1、E2、D1、D2、E3、E4、G1、G2和S之後,完成高壓半導體裝置100。
第2圖是根據本發明的一些實施例,顯示高壓半導體裝置200的剖面示意圖。高壓半導體裝置200與高壓半導體裝置100之差異在於第一高壓井區203的形狀不同於第一高壓井區103的形狀。高壓半導體裝置200之其他元件的製程和材料相同或相似於高壓半導體裝置100,在此便不重複敘述。
如第2圖所示,高壓半導體裝置200的第一高壓井區203與第二高壓井區117重疊的部分具有相同的厚度。值得注意的是,第一高壓井區203的相對兩側分別具有第一漸細部203a和第二漸細部203b,第一漸細部203a沿著第一高壓井區203往該第二埋層105a的方向上具有逐漸變細的厚度,且
該第二漸細部203b沿著第一高壓井區203往第三埋層105b的方向上具有逐漸變細的厚度。此外,第一漸細部203a鄰接第一埋層107和第二埋層105a,且第二漸細部203b鄰接第一埋層107和第三埋層105b。
一些實施例中,第一高壓井區203最底面的長度相同於第二高壓井區117的底面長度。換言之,第一高壓井區203具有相同厚度的部分與第一漸細部203a之間的界面對齊第三高壓井區115a與第二高壓井區117的界面,且第一高壓井區203具有相同厚度的部分與第二漸細部203b之間的界面對齊第五高壓井區115b與第二高壓井區117的界面,藉由上述結構可以讓第一埋層107有彈性的製程濃度範圍,且不易造成空乏而導致漏電流的問題。
第3圖是根據本發明的一些實施例,顯示高壓半導體裝置300的剖面示意圖。高壓半導體裝置300與高壓半導體裝置100之差異在於高壓井區303的形狀不同於第一高壓井區103的形狀。高壓半導體裝置300之其他元件的製程和材料相同或相似於高壓半導體裝置100,在此便不重複敘述。
如第3圖所示,高壓半導體裝置300的第一高壓井區303包含多個區段和多個連接部,例如區段303a、303b、303c、303d、303e、303f、303g、303h、303i、303j和303k,以及連接部305a、305b、305c、305d、305e、305f、305g、305h、305i和305j。區段303a-303k藉由連接部305a-305j彼此連接。
一些實施例中,第一高壓井區303的形成方法包含藉由圖案化的光阻實施離子植入製程,以在半導體基底101
內形成多個不連續的區段(未繪示),然後,實施熱處理製程,即驅入(drive-in)製程,使得植入區段內的離子向外擴散以彼此連接。值得注意的是,利用多個不連續的區段以形成第一高壓井區303的方法可調整各個區段的摻質濃度,使得高壓半導體裝置300的特性可由製程上進行更精準地調控。
本發明提供了高壓半導體裝置的實施例,特別是水平擴散金氧半導體(LDMOS)電晶體的實施例。在本發明的一些實施例中,在半導體基底內設置第一高壓井區,半導體基底具有第一導電類型,且第一高壓井區具有與第一導電類型相反的第二導電類型。在第一高壓井區上設置第一埋層、第二埋層和第三埋層,第一埋層位於第二埋層與第三埋層之間,且第一埋層具有第一導電類型,第二埋層和第三埋層具有第二導電類型。此外,在第一埋層上設置具有第二導電類型的第二高壓井區,且在第二高壓井區內設置具有第二導電類型的源極區和汲極區。
藉由將第一高壓井區延伸至第二埋層和第三埋層下方,可在第一高壓井區上形成與半導體基底完全隔離且具有高崩潰電壓的半導體裝置。再者,藉由在第一高壓井區與第二高壓井區之間設置第一埋層,可在利用第一高壓井區使得半導體裝置可耐受高電壓的前提下提供半導體裝置本身運作所需的電壓,意即可將原使用於低壓裝置的元件將其應用於高壓操作環境。擁有高崩潰電壓的水平擴散金氧半導體電晶體可被廣泛地應用於電位轉換器及高壓積體電路(HVIC)晶片中。
此外,在本發明的一些實施例中,由於源極區和
汲極區皆設置在第二高壓井區內,可降低半導體裝置的導通電阻(Ron),進而提高水平擴散金氧半導體電晶體的導通電流。
以上概述數個實施例,以便在本發明所屬技術領域中具有通常知識者可以更理解本發明實施例的觀點。在本發明所屬技術領域中具有通常知識者應該理解,他們能以本發明實施例為基礎,設計或修改其他製程和結構,以達到與在此介紹的實施例相同之目的及/或優勢。在本發明所屬技術領域中具有通常知識者也應該理解到,此類等效的製程和結構並無悖離本發明的精神與範圍,且他們能在不違背本發明之精神和範圍之下,做各式各樣的改變、取代和替換。
Claims (16)
- 一種高壓半導體裝置,包括:一半導體基底,具有一第一導電類型;一第一高壓井區,設置於該半導體基底內且具有與該第一導電類型相反的一第二導電類型;一第一埋層,設置於該第一高壓井區上且具有該第一導電類型;一第二埋層和一第三埋層,設置於該第一高壓井區上且具有該第二導電類型,其中該第一埋層位於該第二埋層與該第三埋層之間;一磊晶層,設置於該半導體基底上,其中該第一埋層、該第二埋層和該第三埋層自該半導體基底延伸至該磊晶層內;以及一源極區和一汲極區,設置於該第一埋層上且具有該第二導電類型。
- 如申請專利範圍第1項所述之高壓半導體裝置,更包括:一第二高壓井區,設置於該磊晶層內且具有該第二導電類型,其中該源極區和該汲極區位於該第二高壓井區內,且其中該第一埋層夾設於該第一高壓井區與該第二高壓井區之間;以及一閘極結構,設置於該磊晶層上且位於該源極區與該汲極區之間。
- 如申請專利範圍第1項所述之高壓半導體裝置,其中該第一高壓井區鄰接該第二埋層和該第三埋層。
- 如申請專利範圍第1項所述之高壓半導體裝置,其中該第一高壓井區的相對兩側分別具有一第一漸細部和一第二漸細部,該第一漸細部沿著該第一高壓井區往該第二埋層的方向上漸細,且該第二漸細部沿著該第一高壓井區往該第三埋層的方向上漸細,且其中該第一漸細部和該第二漸細部分別鄰接該第二埋層和該第三埋層。
- 如申請專利範圍第1項所述之高壓半導體裝置,其中該第一高壓井區包括複數個區段,該些區段中相鄰的兩者藉由一連接部相連,且該連接部的厚度小於該些區段的厚度。
- 一種高壓半導體裝置,包括:一半導體基底,具有一第一導電類型;一第一高壓井區,設置於該半導體基底內且具有與該第一導電類型相反的一第二導電類型;一第一埋層,設置於該第一高壓井區上且具有該第一導電類型;一第二埋層和一第三埋層,設置於該第一高壓井區上且具有該第二導電類型,其中該第一埋層位於該第二埋層與該第三埋層之間;一第二高壓井區,設置於該第一埋層上且具有該第二導電類型;一磊晶層,設置於該半導體基底上,其中該第一埋層的一部分和該第二高壓井區位於該磊晶層內;以及一源極區和一第一汲極區,設置於該第二高壓井區內且具有該第二導電類型。
- 如申請專利範圍第6項所述之高壓半導體裝置,更包括:一第二汲極區,設置於該第二高壓井區內且具有該第二導電類型,其中該源極區位於該第一汲極區與該第二汲極區之間;一第一閘極結構,設置於該半導體基底上,且位於該第一汲極區與該源極區之間;以及一第二閘極結構,設置於該半導體基底上,且位於該源極區與該第二汲極區之間。
- 如申請專利範圍第6項所述之高壓半導體裝置,更包括:一第三高壓井區,鄰接該第二高壓井區且具有該第一導電類型,其中該第一埋層和該第一高壓井區延伸至該第三高壓井區下。
- 如申請專利範圍第8項所述之高壓半導體裝置,更包括:該第二埋層鄰接該第一埋層,且該第一高壓井區延伸至該第二埋層下;以及一第四高壓井區,設置於該第二埋層上且具有該第二導電類型,其中該第三高壓井區位於該第四高壓井區與該第二高壓井區之間。
- 如申請專利範圍第9項所述之高壓半導體裝置,更包括:一第五高壓井區,鄰接該第二高壓井區且具有該第一導電類型,其中該第二高壓井區位於該第五高壓井區與該第三高壓井區之間;以及一第六高壓井區,設置於該第三埋層上且具有該第二導電類型,其中該第五高壓井區位於該第二高壓井區與該第六高壓井區之間,且該第一高壓井區延伸至該第六高壓井區下。
- 一種高壓半導體裝置的製造方法,包括:在一半導體基底內形成一第一高壓井區,其中該半導體基底具有一第一導電類型,且該第一高壓井區具有與該第一導電類型相反的一第二導電類型;在該第一高壓井區上形成一第一埋層,其中該第一埋層具有該第一導電類型;在該第一高壓井區上且在該第一埋層的兩側分別形成一第二埋層和一第三埋層,其中該第二埋層和該第三埋層具有該第二導電類型;在該半導體基底上形成一磊晶層,其中該第一埋層、該第二埋層和該第三埋層延伸至該磊晶層內;以及在該磊晶層內和該第一埋層上形成一源極區和一汲極區,其中該源極區和該汲極區具有該第二導電類型。
- 如申請專利範圍第11項所述之高壓半導體裝置的製造方法,其中該第一高壓井區自該第一埋層的下方延伸至該第二埋層和該第三埋層的下方,且該第一高壓井區鄰接該第二埋層和該第三埋層。
- 如申請專利範圍第11項所述之高壓半導體裝置的製造方法,其中該第一埋層的摻質濃度大於該第一高壓井區的摻質濃度。
- 如申請專利範圍第11項所述之高壓半導體裝置的製造方法,更包括:在該磊晶層內和該第一埋層上形成一第二高壓井區,其中該第二高壓井區具有該第二導電類型,該源極區和該汲極區位於該第二高壓井區內,且該第一埋層夾設於該第一高壓井區與該第二高壓井區之間。
- 如申請專利範圍第14項所述之高壓半導體裝置的製造方法,其中該第一高壓井區的摻質濃度大於該第二埋層的摻質濃度、該第三埋層的摻質濃度和該第二高壓井區的摻質濃度。
- 如申請專利範圍第14項所述之高壓半導體裝置的製造方法,更包括:在該磊晶層內和該第一埋層上形成一第三高壓井區和一第四高壓井區,其中該第三高壓井區具有該第一導電類型,且該第四高壓井區具有該第二導電類型,以及其中該第三高壓井區位於該第二高壓井區與該第四高壓井區之間,且該第四高壓井區鄰接該第二埋層。
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