CN105629597B - 阵列基板及其显示驱动方法、制作方法、显示装置 - Google Patents

阵列基板及其显示驱动方法、制作方法、显示装置 Download PDF

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Publication number
CN105629597B
CN105629597B CN201610025575.8A CN201610025575A CN105629597B CN 105629597 B CN105629597 B CN 105629597B CN 201610025575 A CN201610025575 A CN 201610025575A CN 105629597 B CN105629597 B CN 105629597B
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China
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layer
transparency conducting
conducting layer
pixel electrode
touch
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CN105629597A (zh
Inventor
孙超超
刘华锋
赵生伟
张凯
杨磊
叶路路
吕景萍
王超
胡重粮
杨盟
丁多龙
顺布乐
谢霖
李瑶
孙士民
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to CN201610025575.8A priority Critical patent/CN105629597B/zh
Publication of CN105629597A publication Critical patent/CN105629597A/zh
Priority to US15/233,408 priority patent/US10564772B2/en
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04166—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/0418—Control or interface arrangements specially adapted for digitisers for error correction or compensation, e.g. based on parallax, calibration or alignment
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G09G3/3659—Control of matrices with row and column drivers using an active matrix the addressing of the pixel involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependant on signal of two data electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
    • G02F1/133334—Electromagnetic shields
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04107—Shielding in digitiser, i.e. guard or shielding arrangements, mostly for capacitive touchscreens, e.g. driven shields, driven grounds
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/0418—Control or interface arrangements specially adapted for digitisers for error correction or compensation, e.g. based on parallax, calibration or alignment
    • G06F3/04184—Synchronisation with the driving of the display or the backlighting unit to avoid interferences generated internally
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0404—Matrix technologies
    • G09G2300/0408—Integration of the drivers onto the display substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
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Abstract

本发明涉及一种阵列基板及其显示驱动方法、制作方法、显示装置，其中的阵列基板包括位于衬底上的晶体管器件层，还包括依次层叠的第一透明导电层、第一绝缘层、第二透明导电层、第二绝缘层和第三透明导电层；所述第一透明导电层在显示区域内覆盖所述晶体管器件层；所述第二透明导电层包括触控电极的图形；所述第三透明导电层包括像素电极的图形；所述显示区域中的任一像素区域内，所述像素电极通过设置在所述第一绝缘层和所述第二绝缘层中的过孔连接所述晶体管器件层的像素电极连接端；所述第一透明导电层在所述过孔处设有开口。本发明可以在实现内嵌式触控的情况下保障公共电极的电屏蔽特性，有利于产品良率和产品性能的提升。

Description

阵列基板及其显示驱动方法、制作方法、显示装置
技术领域
本发明涉及显示技术领域，具体涉及一种阵列基板及其显示驱动方法、制作方法、显示装置。
背景技术
现有的内嵌式(In Cell)触控面板当中，通常将公共电极(Common ITO)既作为液晶驱动电容的一极，又作为触摸感测器(Touch Sensor)的一部分来使用。从而，功能复用的公共电极会被分割成块状或者条状以适应触摸感测电路的布局。然而，整面制作的公共电极原本也是用来屏蔽底部的TFT(Thin Film Transistor，薄膜晶体管)电路处的电场的，因而公共电极在分割后留出的间隙会加大TFT电路对液晶层和触控电极的噪声干扰，而引发各种显示类和触控类的不良。
发明内容
针对现有技术中的缺陷，本发明提供一种阵列基板及其显示驱动方法、制作方法、显示装置，可以在实现内嵌式触控的情况下保障公共电极的电屏蔽特性。
第一方面，本发明提供了一种阵列基板，包括位于衬底上的晶体管器件层，其特征在于，还包括依次层叠的第一透明导电层、第一绝缘层、第二透明导电层、第二绝缘层和第三透明导电层；
所述第一透明导电层在显示区域内覆盖所述晶体管器件层；所述第二透明导电层包括触控电极的图形；所述第三透明导电层包括像素电极的图形；
所述显示区域中的任一像素区域内，所述像素电极通过设置在所述第一绝缘层和所述第二绝缘层中的过孔连接所述晶体管器件层的像素电极连接端；所述第一透明导电层在所述过孔处设有开口。
可选地，所述显示区域中的任一像素区域内，所述像素电极与所述第一透明导电层交叠形成该像素区域内的第一存储电容，所述像素电极与所述触控电极交叠形成该像素区域内的第二存储电容。
可选地，所述晶体管器件层包括依次形成的有源层、栅绝缘层、栅金属层、层间介质层、源漏金属层和钝化层；所述显示区域中的任一像素区域内，所述钝化层的开口暴露部分所述源漏金属层，以形成所述像素电极连接端。
第二方面，本发明还提供了一种上述任意一种的阵列基板的显示驱动方法，包括：
在显示阶段内，向所述第二透明导电层中的触控电极和所述第一透明导电层施加公共电压；
在触控阶段内，向所述第二透明导电层中的触控电极施加触控电压信号，或者接收来自所述第二透明导电层中的触控电极的触摸感测信号；
其中，每一帧内的所述显示阶段与所述触控阶段在时间上分开。
可选地，所述显示驱动方法还包括：
在所述触控阶段内，向所述第一透明导电层施加公共电压。
可选地，所述显示驱动方法还包括：
在所述触控阶段内，将所述第三透明导电层中的像素电极置为浮接状态。
第三方面，本发明还提供了一种阵列基板的制作方法，包括：
形成在显示区域内覆盖所述晶体管器件层的第一透明导电层；所述第一透明导电层在用于连接所述晶体管器件层的像素电极连接端的过孔处设有开口；
形成覆盖所述第一透明导电层的第一绝缘层；
在所述第一绝缘层上形成包括触控电极的图形的第二透明导电层；
形成覆盖所述第二透明导电层和所述第一绝缘层的第二绝缘层；
在所述第一绝缘层和所述第二绝缘层中形成所述过孔；
形成包括像素电极的图形的第三透明导电层；在所述显示区域中的任一像素区域内，所述像素电极通过所述过孔连接所述晶体管器件层的像素电极连接端。
可选地，所述显示区域中的任一像素区域内，所述像素电极与所述第一透明导电层交叠形成该像素区域内的第一存储电容，所述像素电极与所述触控电极交叠形成该像素区域内的第二存储电容。
可选地，所述在衬底上形成晶体管器件层的步骤，具体包括：
依次形成有源层、栅绝缘层、栅金属层、层间介质层、源漏金属层和钝化层；
其中，所述显示区域中的任一像素区域内，所述钝化层的开口暴露部分所述源漏金属层，以形成所述像素电极连接端。
第四方面，本发明还提供了一种显示装置，该显示装置包括上述任意一种的阵列基板。
由上述技术方案可知，本发明基于阵列基板中三个透明导电层的设置，可以在显示时将第二透明导电层中的触控电极作为公共电极使用、在触控时将板状的第一透明导电层作为屏蔽层使用，因而可以在实现内嵌式触控的情况下保障公共电极的电屏蔽特性。进一步地，相对于现有技术，本发明能够减少由TFT电路干扰而引发各种显示类和触控类的不良，有利于产品良率和产品性能的提升。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作一简单的介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明一个实施例中一种阵列基板的局部剖面结构示意图；
图2是本发明一个实施例中一种像素区域内的存储电容的结构示意图；
图3是本发明一个实施例中一种的阵列基板的显示驱动方法的步骤流程示意图；
图4是本发明一个实施例中一种阵列基板的制作方法的步骤流程示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
图1是本发明一个实施例中一种阵列基板的局部剖面结构示意图。参见图1，该阵列基板包括位于衬底11上的晶体管器件层12，还包括依次层叠的第一透明导电层13、第一绝缘层14、第二透明导电层15、第二绝缘层16和第三透明导电层17。其中，衬底11可以是例如玻璃或者聚酰亚胺等材料形成的板状结构，主要用于提供阵列基板中其他结构所需要的制作表面和结构支撑；晶体管器件层12是阵列基板中主要用于在外部信号的驱动下为像素电极提供数据电压信号的层结构，其可以包含有若干个晶体管(比如薄膜晶体管)并具有一定的内部电路连接关系。此外，上述第一透明导电层13、第二透明导电层15和第三透明导电层17均是由透明导电材料形成的层结构，并均可以由图案化工艺而具有至少一种的图形。具体来说，上述第二透明导电层15包括触控电极的图形(比如在电容式触控模式下，该触控电极可以是两种延伸方向相互交叉的线状电极中的一种)，第三透明导电层17包括像素电极的图形(比如在水平转换模式IPS的液晶显示下，分别在每一像素区域内设置的条状电极)。而且可以理解的是，第一绝缘层14设置在第一透明导电层13与第二透明导电层14之间，其形成材料所具有的电绝缘特性可以保持第一透明导电层13与第二透明导电层14之间的电绝缘；第二绝缘层16设置在第二透明导电层15与第三透明导电层17之间，其形成材料所具有的电绝缘特性可以保持第二透明导电层15与第三透明导电层17之间的电绝缘。
而未在图中示出的是，用于显示装置的阵列基板在主平面上分为显示区域(排布有若干个像素区域的一整片区域，即AA——Ative Area，有效显示区域)和非显示区域(显示区域以外的区域)，且通常情况下显示区域的边界呈一封闭图形，而非显示区域围绕着显示区域设置。本发明实施例中，上述第一透明导电层13在阵列基板的显示区域内覆盖晶体管器件层12。而且在显示区域中的任一像素区域内，包含于上述第三透明导电层17的像素电极通过设置在第一绝缘层14和第二绝缘层16中的过孔H1连接晶体管器件层12的像素电极连接端P1，同时第一透明导电层13在该过孔H1处也设有开口以保持与第三透明导电层17之间的电绝缘。可以理解的是，本发明实施例中晶体管器件层12上暴露有用于连接像素电极的开口(即像素电极连接端P1)，而第一绝缘层14和第二绝缘层16中也设有将第三透明导电层17中的像素电极连接至该像素电极连接端P1的过孔H1。此外，该过孔H1所在的位置处第一透明导电层13和第二透明导电层15没有分布，因此晶体管器件层12通过像素电极连接端P1所输出的电信号会仅加载在所在像素区域的像素电极上，而不会加载至第一透明导电层13或第二透明导电层15中的任何一个图形上。
基于上述结构，本发明实施例的阵列基板可以用于实现内嵌式(In Cell)触控显示，具体来说：在时间的划分上，每一帧可以分成触控阶段和显示阶段两部分。在显示阶段中，第二透明导电层15所包括的触控电极的图形可以加载公共电压(Vcom电压)，而在显示区域内覆盖晶体管器件层12的第一透明导电层13可以作为公共电极来使用，使得晶体管器件层12在外部信号的驱动下为每一个像素区域内的像素电极分别提供数据电压信号，以使像素电极与触控电极之间以及像素电极与公共电极之间均形成驱动液晶分子偏转的电场，以形成水平转换(IPS)等水平电场模式的液晶显示。而在触控阶段中，上述像素电极上可以不施加信号，使得触控电极与像素电极上方对应设置的另一触控电极协同地按照电容式触控原理来实现触摸感测。在此阶段中，上述在显示区域内覆盖晶体管器件层12的第一透明导电层13可以加载公共电压(也可以不施加电信号)，从而屏蔽两侧电信号的相互干扰，包括晶体管器件层12产生的电场对触控电极的干扰，以及触控电极产生的电场对晶体管器件层12的干扰。
由此可见，本发明实施例基于上述三个透明导电层的设置，可以在显示时将第二透明导电层中的触控电极作为公共电极使用、在触控时将板状的第一透明导电层作为屏蔽层使用，因而可以在实现内嵌式触控的情况下保障公共电极的电屏蔽特性。进一步地，相对于现有技术，本发明能够减少由晶体管电路干扰而引发各种显示类和触控类的不良，有利于产品良率和产品性能的提升。
可以理解的是，图1所示出的仅是阵列基板在显示区域的一个像素区域内的剖面结构示意，且晶体管器件层12所具有的具体结构仅作为一种具体示例。具体来说，图1中示出了晶体管器件层12中的一个顶栅式薄膜晶体管的剖面结构，此时的晶体管器件层12具体包括依次形成的有源层12a、栅绝缘层12b、栅金属层12c、层间介质层12d、源漏金属层12e和钝化层12f。其中，显示区域中的任一像素区域内，钝化层12f的开口暴露部分源漏金属层12e，以形成像素电极连接端P1。此外可以看出的是，栅绝缘层12b和层间介质层12d中形成有连接源漏金属层12a与有源层12c的过孔。可以理解的是，导体材料形成的源漏金属层12a分别在不同位置处接触半导体材料形成的有源层12c，以形成薄膜晶体管的源极和漏极；导体材料形成的栅金属层12c与半导体材料形成的有源层12c至少部分交叠，以形成薄膜晶体管的栅极；绝缘材料形成的栅绝缘层12b、层间介质层12d和钝化层12f主要用于保持各导体结构之间的电绝缘。基于此，晶体管器件层12中可以基于在不同位置上形成的多个薄膜晶体管，并结合导体之间的连接关系来形成具有一定功能的电路结构，实现上述在外部信号的驱动下为像素电极提供数据电压信号的功能。当然，晶体管器件层12内的薄膜晶体管还可以是底栅式或者其他类型，而且除薄膜晶体管之外还可以设置有其他功能(例如连接、绝缘、遮光、电屏蔽等等)的层结构，本发明对此不做限制。
此外，作为一种像素区域内的存储电容的结构的示例，图2是本发明一个实施例中一种像素区域内的存储电容的结构示意图。参见图2，在显示区域中的任一像素区域内，包含在第三透明导电层17内的像素电极与第一透明导电层13交叠形成该像素区域内的第一存储电容C1，像素电极与包含在第二透明导电层15内的触控电极交叠形成该像素区域内的第二存储电容C2。可以理解的是，第一存储电容C1与第二存储电容C2的形成来源于导电层结构之间的交叠，图中示出的电容符合仅是一种示意而不是另外设置的电容器件。还可以理解的是，第一存储电容C1与第二存储电容C2的形成还来源于显示阶段内的电压施加方式——显示阶段内的像素电极上施加有数据电压信号，而触控电极与公共电极上施加有公共电压。由此，显示阶段内每一像素区域内的存储电容都可以视为第一存储电容C1与第二存储电容C2的并联(总的存储电容值为两个存储电容的电容值之和)，因此在设计总的存储电容值时，可以综合考虑像素电极、触控电极、公共电极所形成的多层结构中的相关参量，来使总的存储电容值达到所需要的水平。根据平行板电容器的电容计算公式可知，相比于单独设置公共电极而言，本发明实施例所提供的触控电极可以提供相对来说更大的存储电容的电容值(因为触控电极比公共电极更接近像素电极)，因此在同样大小的像素区域的面积内达到更大的总的存储电容值，也可以在保持总的存储电容值不变的情况下缩小像素区域的面积。由此可见，本发明实施例中三个透明导电层的设置还可以用于增大存储电容值以提升性能和/或缩小像素区域的面积以增大PPI(Pixels Per Inch，每英寸所拥有的像素数目)，有利于显示性能的提升。
基于上述任意一种的阵列基板，图3是本发明一个实施例中一种的阵列基板的显示驱动方法的步骤流程示意图。参见图3，该显示驱动方法包括：
步骤301：在显示阶段内，向第二透明导电层中的触控电极和第一透明导电层施加公共电压；
步骤302：在触控阶段内，向第二透明导电层中的触控电极施加触控电压信号，或者接收来自第二透明导电层中的触控电极的触摸感测信号；其中，每一帧内的上述显示阶段与上述触控阶段在时间上分开。
可以理解的是，该步骤301与步骤302具体按照显示阶段与触控阶段在时间上的设置来确定执行顺序，而在不同应用场景下可以根据相应的需求来具体设置显示阶段与触控阶段在时间上的排布，本发明对此不做限制。而且，向触控电极和第一透明导电层施加的电压的电压值可以根据具体应用场景来进行调节，比如均设置在-5V～+5V之间。
需要说明的是，本发明实施例的显示驱动方法基于上述任意一种阵列基板的结构，并可以应用至连接晶体管器件层的周边电路(如时序控制器TCON、栅极驱动器、源极驱动器、触控电路等等)中。举例来说，对应设置的两种触控电极可以各自连接触控电路，从而接收来自触控电极的触控电压信号和/或向触控电路发送触摸感测信号。基于此，本发明实施例可以配合上述阵列基板的结构共同实现内嵌式触控显示，同时保障公共电极的电屏蔽特性。
此外，在上述触控阶段内可以向第一透明导电层施加公共电压，使得第一透明导电层能够更加彻底地屏蔽两侧电信号的相互干扰；而且，触控阶段内还可以将第三透明导电层中的像素电极置为浮接状态，以减小对触控电极的电信号干扰。当然，在具体实施时可以根据实际情况选择是否采用上述设置，本发明对此不做限制。
基于同样的发明构思，图4是本发明一个实施例中一种阵列基板的制作方法的步骤流程示意图。参见图4，该制作方法除了包括图4中未示出的步骤400：在衬底上形成晶体管器件层之外，还包括：
步骤401：形成在显示区域内覆盖晶体管器件层的第一透明导电层；其中的第一透明导电层在用于连接晶体管器件层的像素电极连接端的过孔处设有开口；
步骤402：形成覆盖第一透明导电层的第一绝缘层；
步骤403：在第一绝缘层上形成包括触控电极的图形的第二透明导电层；
步骤404：形成覆盖第二透明导电层和第一绝缘层的第二绝缘层；
步骤405：在第一绝缘层和第二绝缘层中形成过孔；
步骤406：形成包括像素电极的图形的第三透明导电层；其中，在显示区域中的任一像素区域内，像素电极通过过孔连接晶体管器件层的像素电极连接端。
可以理解的是，本发明实施例的制作方法可以用于形成上述任意一种的阵列基板，而且本发明实施例所要制作的阵列基板可以具有上述任意一种的结构，在此不再赘述。举例来说，上述步骤401之前，衬底上已经形成有晶体管器件层；而上述步骤401、步骤403和步骤406中的一个或多个可以包括一次ITO(氧化铟锡)的构图工艺，从而形成具有相应图案的透明导电层。上述步骤402、步骤404中可以包括采用表面钝化工艺形成整面的第一绝缘层或者第二绝缘层的过程。而在上述步骤405中，可以包括一次过孔刻蚀的构图工艺，以对第一绝缘层和第二绝缘层进行部分刻蚀以形成上述过孔。此外，上述各透明导电层与各绝缘层的厚度可以根据具体应用场景进行设置，比如均设置在之间。
作为一种更具体的示例，对应于图1所示出的晶体管器件层12的具体结构，本发明实施例中的步骤400：在衬底上形成晶体管器件层，可以顺序包括：依次形成有源层、栅绝缘层、栅金属层、层间介质层、源漏金属层和钝化层；其中，显示区域中的任一像素区域内，钝化层的开口暴露部分源漏金属层，以形成像素电极连接端。可以理解的是，晶体管器件层所具有的具体结构可以参照上文，而晶体管器件层中的各个层结构均可以通过例如构图工艺或者表面钝化工艺来形成，在此不再赘述。基于此，晶体管器件层中可以基于在不同位置上形成的多个薄膜晶体管，并结合导体之间的连接关系来形成具有一定功能的电路结构，实现上述在外部信号的驱动下为像素电极提供数据电压信号的功能。当然，晶体管器件层内的薄膜晶体管还可以是底栅式或者其他类型，而且除薄膜晶体管之外还可以设置有其他功能(例如连接、绝缘、遮光、电屏蔽等等)的层结构，本发明对此不做限制。
基于同样的发明构思，本发明实施例提供一种显示装置，该显示装置包括上述任意一种的阵列基板。需要说明的是，本实施例中的显示装置可以为：液晶显示面板、电子纸、手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。特别地，本发明实施例的显示装置可以是ADS(Advanced Super Dimension Switch，高级超维场转换)模式的液晶显示装置。由于本发明实施例的显示装置包括上述任意一种的阵列基板，因此本发明实施例基于上述三个透明导电层的设置，同样可以在显示时将第二透明导电层中的触控电极作为公共电极使用、在触控时将板状的第一透明导电层作为屏蔽层使用，因而可以在实现内嵌式触控的情况下保障公共电极的电屏蔽特性。进一步地，相对于现有技术，本发明能够减少由晶体管电路干扰而引发各种显示类和触控类的不良，有利于产品良率和产品性能的提升。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
本发明的说明书中，说明了大量具体细节。然而能够理解的是，本发明的实施例可以在没有这些具体细节的情况下实践。在一些实例中，并未详细示出公知的方法、结构和技术，以便不模糊对本说明书的理解。类似地，应当理解，为了精简本发明公开并帮助理解各个发明方面中的一个或多个，在上面对本发明的示例性实施例的描述中，本发明的各个特征有时被一起分组到单个实施例、图、或者对其的描述中。
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围，其均应涵盖在本发明的权利要求和说明书的范围当中。

Claims (8)

1.一种阵列基板，包括位于衬底上的晶体管器件层，其特征在于，还包括依次层叠的第一透明导电层、第一绝缘层、第二透明导电层、第二绝缘层和第三透明导电层；
所述第一透明导电层在显示区域内覆盖所述晶体管器件层；所述第二透明导电层包括触控电极的图形；所述第三透明导电层包括像素电极的图形；
所述显示区域中的任一像素区域内，所述像素电极通过设置在所述第一绝缘层和所述第二绝缘层中的过孔连接所述晶体管器件层的像素电极连接端；所述第一透明导电层在所述过孔处设有开口；
所述显示区域中的任一像素区域内，所述像素电极与所述第一透明导电层交叠形成该像素区域内的第一存储电容，所述像素电极与所述触控电极交叠形成该像素区域内的第二存储电容。
2.根据权利要求1所述的阵列基板，其特征在于，所述晶体管器件层包括依次形成的有源层、栅绝缘层、栅金属层、层间介质层、源漏金属层和钝化层；所述显示区域中的任一像素区域内，所述钝化层的开口暴露部分所述源漏金属层，以形成所述像素电极连接端。
3.一种如权利要求1至2中任意一项所述的阵列基板的显示驱动方法，其特征在于，包括：
在显示阶段内，向所述第二透明导电层中的触控电极和所述第一透明导电层施加公共电压；
在触控阶段内，向所述第二透明导电层中的触控电极施加触控电压信号，或者接收来自所述第二透明导电层中的触控电极的触摸感测信号；
其中，每一帧内的所述显示阶段与所述触控阶段在时间上分开。
4.根据权利要求3所述的显示驱动方法，其特征在于，所述显示驱动方法还包括：
在所述触控阶段内，向所述第一透明导电层施加公共电压。
5.根据权利要求3所述的显示驱动方法，其特征在于，所述显示驱动方法还包括：
在所述触控阶段内，将所述第三透明导电层中的像素电极置为浮接状态。
6.一种阵列基板的制造方法，包括在衬底上形成晶体管器件层的步骤，其特征在于，还包括：
形成在显示区域内覆盖所述晶体管器件层的第一透明导电层；所述第一透明导电层在用于连接所述晶体管器件层的像素电极连接端的过孔处设有开口；
形成覆盖所述第一透明导电层的第一绝缘层；
在所述第一绝缘层上形成包括触控电极的图形的第二透明导电层；
形成覆盖所述第二透明导电层和所述第一绝缘层的第二绝缘层；
在所述第一绝缘层和所述第二绝缘层中形成所述过孔；
形成包括像素电极的图形的第三透明导电层；在所述显示区域中的任一像素区域内，所述像素电极通过所述过孔连接所述晶体管器件层的像素电极连接端；
所述显示区域中的任一像素区域内，所述像素电极与所述第一透明导电层交叠形成该像素区域内的第一存储电容，所述像素电极与所述触控电极交叠形成该像素区域内的第二存储电容。
7.根据权利要求6所述的制造方法，其特征在于，所述在衬底上形成晶体管器件层的步骤，具体包括：
依次形成有源层、栅绝缘层、栅金属层、层间介质层、源漏金属层和钝化层；
其中，所述显示区域中的任一像素区域内，所述钝化层的开口暴露部分所述源漏金属层，以形成所述像素电极连接端。
8.一种显示装置，其特征在于，包括如权利要求1至2中任意一项所述的阵列基板。
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