CN109101138A - 阵列基板及显示面板 - Google Patents

阵列基板及显示面板 Download PDF

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CN109101138A
CN109101138A CN201810955534.8A CN201810955534A CN109101138A CN 109101138 A CN109101138 A CN 109101138A CN 201810955534 A CN201810955534 A CN 201810955534A CN 109101138 A CN109101138 A CN 109101138A
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array substrate
electrode
touch
electrode wires
public electrode
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陈彩琴
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN201810955534.8A priority Critical patent/CN109101138A/zh
Priority to PCT/CN2018/105277 priority patent/WO2020037738A1/zh
Priority to US16/317,574 priority patent/US10768768B2/en
Publication of CN109101138A publication Critical patent/CN109101138A/zh
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    • G—PHYSICS
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    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
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    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • G—PHYSICS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/772—Field effect transistors
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    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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Abstract

本发明提出了一种阵列基板及显示面板，所述阵列基板包括基板，及位于所述基板上的第一公共电极、触控感应电极线、第二公共电极，所述触控感应电极线形成于所述第一公共电极上；所述第一公共电极包括至少两个第一公共电极板，所述触控感应电极线包括至少两条不连续的电极线，每一所述电极线对应一所述第一公共电极板；其中，相邻俩所述电极线通过所述第二公共电极电连接。本发明通过一道光罩工艺同时形成所述触控感应电极线与所述第一公共电极，节省了光罩，有效的降低了面板阵列制造过程中的周期，减少了制作成本。

Description

阵列基板及显示面板
技术领域
本发明涉及平板显示器领域，特别涉及一种阵列基板及显示面板。
背景技术
触控技术作为智能化的一个重要指标，应用范围越来越广。触控技术经过快速的发展，按照触控原理可分为压阻式、光学式、电容式等，其中电容式触控技术经过多代的发展，应用最为广泛。电容式触控技术大致可分为外挂式触控(Add-on Touch)、外嵌式触控(On-cell Touch)、及内嵌式(In-cell Touch)。
如今，内嵌式触控显示面板越来越多地应用到手机等电子显示设备。内嵌式触控显示面板将触控与显示功能集成在一起，将触控传感器(Touch Sensor)制作在阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)(通常称为TFT阵列基板)与彩色滤光片基板(Color Filter，CF)之间，在保证触控灵敏度的同时，可以使触控显示产品更轻薄、光学显示性能更好，同时可以将显示和触控的驱动电路整合到一颗芯片，量产后可实现低成本效益。
在LTPS产品结构中，ITP(In Cell Touch Panel，内嵌式触控面板)结构相较非ITP，只需增加两层膜层结构，即触控感应电极和触控绝缘层；但是，LTPS的工艺复杂，在阵列工艺中，基板阵列成膜的的层别较多，一般需要10层及以上的膜层结构；较多的光罩数量，导致产品制作产能时间增长，增加了光照成本以及运营成本。
因此，本发明基于此技术问题，而提出了一新型的结构。
发明内容
本发明提供一种阵列基板及显示面板，以解决现有阵列基板工艺复杂的技术问题。
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种阵列基板，其中，所述阵列基板包括：
基板；
位于所述基板上的平坦层；
位于所述平坦层上的第一公共电极；
位于所述第一公共电极上的钝化层；
位于所述钝化层上的第二公共电极；以及
触控感应电极线，形成于所述第一公共电极上，所述触控感应电极线与所述第一公共电极电连接。
在本发明的阵列基板中，所述第一公共电极包括至少两个呈阵列分布且绝缘设置的第一公共电极板，每一所述第一公共电极板对应至少一条所述触控感应电极线。
在本发明的阵列基板中，所述触控感应电极线包括至少两条不连续的电极线，每一所述电极线对应一所述第一公共电极板。
在本发明的阵列基板中，所述第二公共电极包括至少一个第二公共电极板，相邻俩所述电极线通过所述第二公共电极板电连接。
在本发明的阵列基板中，所述阵列基板包括第一过孔，所述第二公共电极板通过所述第一过孔与所述电极线电连接。
在本发明的阵列基板中，所述阵列基板还包括第二过孔，部分所述第二公共电极通过所述第二过孔与所述阵列基板中的源极或/和漏极电连接。
在本发明的阵列基板中，所述第一过孔贯穿所述平坦层，所述第二过孔贯穿所述钝化层以及部分所述平坦层。
在本发明的阵列基板中，所述触控感应电极线与所述第一公共电极通过同一道光罩工艺制成。
在本发明的阵列基板中，所述触控感应电极线在所述第一公共电极板上的正投影，位于所述第一公共电极内。
本发明还提出了一种显示面板，其中，所述显示面板包括上述阵列基板。
有益效果：本发明通过一道光罩工艺同时形成所述触控感应电极线与所述第一公共电极，节省了光罩，有效的降低了面板阵列制造过程中的周期，减少了制作成本。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一种阵列基板的膜层结构图；
图2为本发明一种阵列基板触控层的俯视图；
图3为图2局部区域的放大图；
图4为图3中A点的剖面图；
图5为图3中B点的剖面图。
具体实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明提出了一种阵列基板，所述阵列基板包括基板101、位于所述基板101上的薄膜晶体管层、位于所述薄膜晶体管层上的平坦层109、位于所述平坦层109上的第一公共电极110、位于所述第一公共电极110上的触控感应电极线113、位于所述触控感应电极线113上的钝化层111、以及位于所述钝化层111上的第二公共电极112。
图1所示为本发明一种阵列基板的膜层结构图，其中，区域A为显示区域，区域B为非显示区域；本实施例中，所述薄膜晶体管层包括遮光层102、缓冲层103、硅沟道层104、第一绝缘层104、栅极106、第二绝缘层107、源漏极108以及若干过孔。
在本发明优选实施例中，所述基板101的原材料可以为玻璃基板、石英基板、树脂基板等中的一种。
所述遮光层102形成于所述基板101上，所述遮光层102可以为单不限定于黑色遮光材料。
所述缓冲层103形成于所述遮光层102上，所述缓冲层覆盖所述遮光层。
所述硅沟道层104形成于所述缓冲层103上，所述硅沟道层104由多晶硅构成，所述硅沟道层104包括经离子掺杂的轻掺杂区域1041和重掺杂区域1042，所述重掺杂区域1042位于所述硅沟道层104的两侧，所述轻掺杂区域1041位于未进行离子掺杂的所述硅沟道层104和所述重掺杂区域1042之间；其中，所述重掺杂区域1042注入有高浓度N+离子，所述轻掺杂区域1041注入有低浓度N-离子。
所述第一绝缘层105形成于所述硅沟道层104上，述第一绝缘层105为栅绝缘层，所述栅绝缘层将所述硅沟道层104覆盖，所述栅绝缘层主要用于将所述硅沟道层104与其他金属层隔离；优选的，所述栅绝缘层的材料通常为氮化硅，也可以使用氧化硅和氮氧化硅等。
所述栅极106形成于所述第一绝缘层105上，所述栅极106的金属材料通常可以采用钼、铝、铝镍合金、钼钨合金、铬、或铜等金属，也可以使用上述几种金属材料的组合物，优选的，本实施例中所述栅极106的金属材料为钼；
通过对形成所述栅极106的一金属层使用第一光罩制程工艺，在该金属层上形成一光阻层，经掩模板(未画出)曝光，显影以及蚀刻的构图工艺处理后，使该金属层形成如图1所示的所述阵列基板的栅极106，并剥离该光阻层。
所述第二绝缘层107形成于所述栅极106上，所述第二绝缘层107为间绝缘层，所述间绝缘层将所述栅极106覆盖，所述间绝缘层主要用于将所述栅极106和所述源漏极108隔离。
所述源漏极108形成于所述第二绝缘层107上，所述源漏极108的金属材料通常可以采用钼、铝、铝镍合金、钼钨合金、铬、铜或钛铝合金等金属，也可以使用上述几种金属材料的组合物，优选的，所述源漏极108的金属材料为钛铝合金；
通过对形成所述源漏极108的一金属层使用第二光罩制程工艺，在该金属层上形成一光阻层，经掩模板(未画出)曝光，显影以及蚀刻的构图工艺处理后，使该金属层形成如图1所示的所述阵列基板的源漏极108，并剥离该光阻层。
所述平坦层109形成于所述源漏极108上，所述平坦层109覆盖所述源漏极108，主要用于保证膜层结构的平整性。
所述第一公共电极110形成于所述平坦层109上，如图2所示，所述第一公共电极110包括呈阵列分布且绝缘设置的第一公共电极板1101，又可作为触控电极，每一所述第一公共电极板1101与至少一条所述触控感应电极线113对应；本实施例中，每一所述公共电极板1101对应一条所述触控感应电极线113。
所述钝化层111形成于所述第一公共电极110上，用于保证膜层结构的平整性；优选的，本实施例中，优选的，所述钝化层111材料通常为氮化矽化合物。
所述第二公共电极112形成于所述钝化层111上，所述第二公共电极112又可称为像素电极，所述第一公共电极110与所述第二公共电极112提供液晶分子偏转所的电压。
如图1和图2所示，所述阵列基板包括形成于所述第一公共电极板1101上的所述触控感应电极线113，所述触控感应电极线113包括至少两段不连续的电极线1131，每一所述电极线1131对应一所述第一公共电极板1101；在本实施例中，所述第二公共电极112包括至少一个第二公共电极板1121，相邻俩所述电极线1131通过所述第二公共电极板1121电连接。
如图3所示，所述阵列基板包括第一过孔114，所述第二公共电极板1121通过所述第一过孔114与所述电极线1131电连接；可以理解的，由于各所述第一公共电极板1101与各所述第一公共电极板1101对应的所述电极线1131为非连续的，即绝缘设置，因此本发明通过第二公共电极板1121将各所述第一公共电极板1101连接起来，所述第一公共电极板1101上的触控信号通过所述第二公共电极板1121传递至与之相邻所述第一公共电极板1101，最后传递至驱动芯片。
图4所示为图3中A点的剖面图，所述电极线1131形成于所述第一公共电极板1101上，与所述第一公共电极板1101并列设置；图5所示为图3中B点的剖面图，所述电极线1131形成于所述第一公共电极板1101上，与所述第一公共电极板1101并列设置；该位置还包括所述第一过孔114，所述第二公共电极板1121通过所述第一过孔114与所述电极线1131或/和所述第一公共电极板1101电连接，并且相邻俩所述第一公共电极板1101通过所述第二公共电极板1121进行搭接。
在本发明实施例中，如图1所示，所述阵列基板还包括第二过孔115，部分所述第二公共电极112通过所述第二过孔115与所述阵列基板中的源极或/和漏极108电连接；可以理解的，所述第一过孔114贯穿所述平坦层109，所述第二过孔115贯穿所述钝化层111以及部分所述平坦层109。
另外，所述触控感应电极线113与所述第一公共电极110在一道HTM光罩形成，即所述电极线1131在与之对应的所述第一公共电极板1101上的正投影位于所述第一公共电极板1101内。
本发明还提出了一种显示面板，其中，所述显示装置包括上述的阵列基板。
本发明提出了一种阵列基板及显示面板，所述阵列基板包括基板，及位于所述基板上的第一公共电极、触控感应电极线、第二公共电极，所述触控感应电极线形成于所述第一公共电极上；所述第一公共电极包括至少两个第一公共电极板，所述触控感应电极线包括至少两条不连续的电极线，每一所述电极线对应一所述第一公共电极板；其中，相邻俩所述电极线通过所述第二公共电极电连接。本发明通过一道光罩工艺同时形成所述触控感应电极线与所述第一公共电极，节省了光罩，有效的降低了面板阵列制造过程中的周期，减少了制作成本。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

1.一种阵列基板，其特征在于，包括：
基板；
位于所述基板上的平坦层；
位于所述平坦层上的第一公共电极；
位于所述第一公共电极上的钝化层；
位于所述钝化层上的第二公共电极；以及
触控感应电极线，形成于所述第一公共电极上，所述触控感应电极线与所述第一公共电极电连接。
2.根据权利要求1所述的阵列基板，其特征在于，所述第一公共电极包括至少两个呈阵列分布且绝缘设置的第一公共电极板，每一所述第一公共电极板对应至少一条所述触控感应电极线。
3.根据权利要求2所述的阵列基板，其特征在于，所述触控感应电极线包括至少两条不连续的电极线，每一所述电极线对应一所述第一公共电极板。
4.根据权利要求3所述的阵列基板，其特征在于，所述第二公共电极包括至少一个第二公共电极板，相邻俩所述电极线通过所述第二公共电极板电连接。
5.根据权利要求4所述的阵列基板，其特征在于，所述阵列基板包括第一过孔，所述第二公共电极板通过所述第一过孔与所述电极线电连接。
6.根据权利要求5所述的阵列基板，其特征在于，所述阵列基板还包括第二过孔，部分所述第二公共电极通过所述第二过孔与所述阵列基板中的源极或/和漏极电连接。
7.根据权利要求6所述的阵列基板，其特征在于，所述第一过孔贯穿所述平坦层，所述第二过孔贯穿所述钝化层以及部分所述平坦层。
8.根据权利要求1所述的阵列基板，其特征在于，所述触控感应电极线与所述第一公共电极通过同一道光罩工艺制成。
9.根据权利要求8所述的阵列基板，其特征在于，所述触控感应电极线在所述第一公共电极板上的正投影，位于所述第一公共电极内。
10.一种显示面板，其特征在于，所述显示面板包括权利要求1～9任一项所述的阵列基板。
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