CN106292035A - 压感显示面板及其制造方法、压感显示装置 - Google Patents

压感显示面板及其制造方法、压感显示装置 Download PDF

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Publication number
CN106292035A
CN106292035A CN201610844352.4A CN201610844352A CN106292035A CN 106292035 A CN106292035 A CN 106292035A CN 201610844352 A CN201610844352 A CN 201610844352A CN 106292035 A CN106292035 A CN 106292035A
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China
Prior art keywords
electrode
display floater
pressure sensitivity
underlay substrate
shaped electric
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Application number
CN201610844352.4A
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English (en)
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CN106292035B (zh
Inventor
刘英明
董学
薛海林
陈小川
王海生
丁小梁
杨盛际
赵卫杰
李昌峰
刘伟
王鹏鹏
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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Priority to CN201610844352.4A priority Critical patent/CN106292035B/zh
Publication of CN106292035A publication Critical patent/CN106292035A/zh
Priority to US15/743,497 priority patent/US10509501B2/en
Priority to PCT/CN2017/095510 priority patent/WO2018054174A1/zh
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    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
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Abstract

本发明公开了一种压感显示面板及其制造方法、压感显示装置,属于显示技术领域。所述压感显示面板包括:低温多晶硅显示面板,以及设置在低温多晶硅显示面板入光侧的预设电极;低温多晶硅显示面板中的阵列基板包括:衬底基板,以及形成在衬底基板上材质为导体的预设功能层;其中,预设功能层在衬底基板上的正投影区域与预设电极在衬底基板上的正投影区域存在重叠区域,且预设功能层和预设电极均与压感控制单元相连接。本发明解决了压感显示面板较厚的问题,减小了压感显示面板的厚度,本发明用于压感显示。

Description

压感显示面板及其制造方法、压感显示装置
技术领域
本发明涉及显示技术领域,特别涉及一种压感显示面板及其制造方法、压感显示装置。
背景技术
随着显示技术的发展,压感显示面板被越来越多地应用在手机或平板电脑等电子产品上。压感显示面板能够检测用户对压感显示面板的按压力度,进而根据用户的按压力度,显示相应的图像。
相关技术中,压感显示面板可以包括面板主体以及设置在面板主体入光侧的压感模块。具体的,面板主体可以包括:对盒成形的彩膜基板和阵列基板,以及位于彩膜基板和阵列基板之间的液晶。压感模块可以包括绝缘层,设置在绝缘层一侧的预设电极,以及设置在绝缘层另一侧的多个辅助电极,该多个辅助电极和预设电极均与控制单元相连接。在用户未对压感显示面板进行按压时,每个辅助电极与预设电极形成的电容的大小为预设电容;在用户对压感显示面板上某一辅助电极所在的区域进行按压时,该辅助电极与预设电极之间的目标距离发生了改变,且用户对压感显示面板的按压力度与目标距离呈正相关,辅助电极与预设电极形成的电容与目标距离呈负相关,也即,控制单元可以通过检测辅助电极与预设电极形成的电容的大小,确定用户对压感显示面板的按压力度。
由于相关技术中,压感显示面板不仅仅包括面板主体,还包括设置在阵列基板入光侧的压感单元,因此,压感显示面板较厚。
发明内容
为了解决压感显示面板较厚的问题,本发明提供了一种压感显示面板及其制造方法、压感显示装置。所述技术方案如下:
第一方面,提供了一种压感显示面板,所述压感显示面板包括:低温多晶硅显示面板,以及设置在所述低温多晶硅显示面板入光侧的预设电极;
所述低温多晶硅显示面板中的阵列基板包括:衬底基板,以及形成在所述衬底基板上材质为导体的预设功能层;
其中,所述预设功能层在所述衬底基板上的正投影区域与所述预设电极在所述衬底基板上的正投影区域存在重叠区域,且所述预设功能层和所述预设电极均与压感控制单元相连接。
可选的,所述预设功能层包括遮光图案和辅助电极,
所述辅助电极在所述衬底基板上的正投影区域与所述预设电极在所述衬底基板上的正投影区域存在重叠区域,且与所述遮光图案在所述衬底基板上的正投影区域不重叠,所述辅助电极与所述压感控制单元相连接。
可选的,形成有所述预设功能层的衬底基板上还依次形成有缓冲层、有源层、栅绝缘层、栅极图案、中间介电层和源漏极图案;
所述源漏极图案包括:源极、漏极和屏蔽电极,所述辅助电极在所述衬底基板上的正投影区域位于所述屏蔽电极在所述衬底基板上的正投影区域内。
可选的,形成有所述源漏极图案的衬底基板上还依次形成有平坦层、公共电极图案、钝化层和像素电极图案;
所述公共电极图案包括阵列排布的多个公共电极,所述多个公共电极包括至少一个触控公共电极,每个所述触控公共电极通过平坦层上的过孔与一个屏蔽电极相连接,且任意两个触控公共电极所连接的屏蔽电极不同,每个与触控公共电极相连接的屏蔽电极与触摸控制单元相连接。
可选的,所述辅助电极包括有效辅助电极和连接辅助电极,所述有效辅助电极通过连接辅助电极与压感控制单元相连接,
所述衬底基板上某一区域对应的有效面积为第一有效面积与第二有效面积的和,所述第一有效面积为:位于所述某一区域内的有效辅助电极在所述衬底基板上的正投影区域与预设电极在所述衬底基板上的正投影区域的重叠面积,所述第二有效面积为:与所述某一区域内的有效辅助电极相连接的连接辅助电极在所述衬底基板上的正投影区域与预设电极在所述衬底基板上的正投影区域的重叠面积;
所述衬底基板上靠近所述压感控制单元的区域对应的有效面积,大于所述衬底基板上远离所述压感控制单元的区域对应的有效面积。
可选的,所述低温多晶硅显示面板中的彩膜基板包括黑矩阵,
所述辅助电极在所述衬底基板上的正投影区域位于所述黑矩阵在所述衬底基板上的正投影区域内。
可选的,所述辅助电极包括至少两个第一条状电极和至少一个第二条状电极,
所述第一条状电极的长度方向垂直于所述第二条状电极的长度方向,第2n+1个第一条状电极与第2n+2个第一条状电极通过至少一个第二条状电极相连接,所述n为大于或等于0的整数。
可选的,所述辅助电极包括至少四个第一条状电极,第2n+1个第一条状电极、第2n+2个第一条状电极、第2n+3个第一条状电极与第2n+4个第一条状电极沿远离所述压感控制单元到靠近所述压感控制单元的方向依次排布,
所述第2n+1个第一条状电极与所述第2n+2个第一条状电极通过p个第二条状电极相连接,所述第2n+3个第一条状电极与所述第2n+4个第一条状电极通过q个第二条状电极相连接,所述p和所述q均为大于或等于1的整数,且所述q大于所述p。
可选的,所述预设电极为设置在所述低温多晶硅显示面板入光侧的中框。
第二方面,提供了一种压感显示面板的制造方法,用于制造如第一方面所述的压感显示面板,所述方法包括:
制造低温多晶硅显示面板,所述低温多晶硅显示面板中的阵列基板包括:衬底基板,以及形成在所述衬底基板上材质为导体的预设功能层;
在所述低温多晶硅显示面板入光侧的设置预设电极,所述预设功能层在所述衬底基板上的正投影区域与所述预设电极在所述衬底基板上的正投影区域存在重叠区域;
将所述预设功能层和所述预设电极均连接至压感控制单元,形成压感显示面板。
可选的,所述制造低温多晶硅显示面板,包括:
在所述衬底基板上形成所述预设功能层,所述预设功能层包括遮光图案和辅助电极,所述辅助电极在所述衬底基板上的正投影区域与所述预设电极在所述衬底基板上的正投影区域存在重叠区域,且与所述遮光图案在所述衬底基板上的正投影区域不重叠,所述辅助电极与所述压感控制单元相连接。
可选的,所述制造低温多晶硅显示面板,还包括:
在形成有所述预设功能层的衬底基板上依次形成缓冲层、有源层、栅绝缘层、栅极图案、中间介电层和源漏极图案,所述源漏极图案包括:源极、漏极和屏蔽电极,所述辅助电极在所述衬底基板上的正投影区域位于所述屏蔽电极在所述衬底基板上的正投影区域内。
可选的,所述制造低温多晶硅显示面板,还包括:
在形成有所述源漏极图案的衬底基板上依次形成平坦层、公共电极图案、钝化层和像素电极图案,所述公共电极图案包括阵列排布的多个公共电极,所述多个公共电极包括至少一个触控公共电极,每个所述触控公共电极通过平坦层上的过孔与一个屏蔽电极相连接,且任意两个触控公共电极所连接的屏蔽电极不同,每个与所述触控公共电极相连接的屏蔽电极与触摸控制单元相连接。
第三方面,提供了一种压感显示装置,所述压感显示装置包括第一方面所述的压感显示面板。
本发明提供了一种压感显示面板及其制造方法、压感显示装置,由于该压感显示面板包括低温多晶硅显示面板以及设置在低温多晶硅显示面板入光侧的预设电极,且该低温多晶硅显示面板中的预设功能层以及预设电极均与压感控制单元相连接,该低温多晶硅显示面板中的预设功能层可以作为压感单元中的辅助电极,也即本发明中低温多晶硅显示面板的入光侧仅仅设置有预设电极,无需在低温多晶硅显示面板的入光侧设置辅助电极和绝缘层,因此,减小了压感显示面板的厚度。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的一种压感显示面板的结构示意图;
图2为本发明实施例提供的一种压感显示面板的局部结构示意图;
图3为本发明实施例提供的另一种压感显示面板的局部结构示意图;
图4为本发明实施例提供的一种压感显示面板的制造方法的方法流程图;
图5-1为本发明实施例提供的一种低温多晶硅显示面板中阵列基板的局部结构示意图;
图5-2为本发明实施例提供的另一种低温多晶硅显示面板中阵列基板的局部结构示意图;
图5-3为本发明实施例提供的又一种低温多晶硅显示面板中阵列基板的局部结构示意图;
图5-4为本发明实施例提供的一种低温多晶硅显示面板中阵列基板的结构示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面将结合附图对本发明实施方式作进一步地详细描述。
如图1所示,本发明实施例提供了一种压感显示面板0,该压感显示面板0可以包括:低温多晶硅(英文:Low Temperature Poly-silicon;简称:LTPS)显示面板01,以及设置在低温多晶硅显示面板01入光侧的预设电极02;
低温多晶硅显示面板01中的阵列基板011包括:衬底基板11,以及形成在衬底基板11上材质为导体的预设功能层12;其中,预设功能层12在衬底基板11上的正投影区域与预设电极02在衬底基板11上的正投影存在重叠区域,且预设功能层12和预设电极02均与压感控制单元1相连接。
综上所述,本发明实施例提供了一种压感显示面板,由于该压感显示面板包括低温多晶硅显示面板以及设置在低温多晶硅显示面板入光侧的预设电极,且该低温多晶硅显示面板中的预设功能层以及预设电极均与压感控制单元相连接,该低温多晶硅显示面板中的预设功能层可以作为压感单元中的辅助电极,也即本发明中低温多晶硅显示面板的入光侧仅仅设置有预设电极,无需在低温多晶硅显示面板的入光侧设置辅助电极和绝缘层,因此,减小了压感显示面板的厚度。
可选的,预设功能层12可以包括遮光(英文:Light Shield;简称:LS)图案121和辅助电极122,辅助电极122在衬底基板11上的正投影区域与预设电极121在衬底基板11上的正投影区域存在重叠区域(如该重叠区域可以与辅助电极122的形状和大小完全相同),且与遮光图案121在衬底基板11上的正投影区域不重叠,辅助电极122与压感控制单元1相连接。由于遮光图案121与相关技术中的遮光图案在低温多晶硅显示面板中所起到的作用相同,且遮光图案121设置在低温多晶硅显示面板中的薄膜晶体管(英文:Thin FilmTransistor;简称:TFT)沟道的下方,遮光图案121在衬底基板11上的正投影区域与辅助电极122在衬底基板11上的正投影区域不重叠,也即辅助电极122并未设置在TFT沟道的下方,在对辅助电极施加电压时,辅助电极上的电压不会对TFT沟道产生影响。优选的,本发明实施例中的遮光图案与辅助电极相互独立,也即遮光图案与辅助电极不相连接,在向辅助电极输入电压时,遮光图案上未输入电压。
示例的,该材质为导体的预设功能层可以为低温多晶硅显示面板中的任意一个材质为导体的膜层。需要说明的是,图1所示的压感显示面板0中,低温多晶硅显示面板01中的彩膜基板(图1中未示出)包括黑矩阵(图1中未示出),辅助电极122在阵列基板011的衬底基板11上的正投影区域位于彩膜基板中的黑矩阵在阵列基板011的衬底基板11上的正投影区域内。也即,彩膜基板中的黑矩阵能够有效的将本发明中的辅助电极进行遮挡,从而使得本发明实施例中的辅助电极不会影响该压感显示面板的显示。进一步的,本发明实施例中的预设电极02可以为设置在低温多晶硅显示面板入光侧的中框。
进一步的,形成有预设功能层12的衬底基板11上还依次形成有缓冲层13、有源层14、栅绝缘层15、栅极图案16、中间介电层17和源漏极图案18;其中,源漏极图案18可以包括:源极181、漏极182和屏蔽电极183,辅助电极122在衬底基板11上的正投影区域位于屏蔽电极183在衬底基板11上的正投影区域内。由于衬底基板11上形成有屏蔽电极183,且屏蔽电极183位于辅助电极122和低温多晶硅显示面板的出光侧之间,在用户使用手指触摸压感显示面板0时,由于用户手指为导体,用户手指会对用户手指附近的电极上的电压产生影响,又由于屏蔽电极183设置在辅助电极122与用户手指之间,因此,该屏蔽电极183能够防止用户手指对该辅助电极122上的电压的影响。
形成有源漏极图案18的衬底基板11上还依次形成有平坦层19、公共电极图案20、钝化层21和像素电极图案22;其中,公共电极图案20可以包括阵列排布的多个公共电极,多个公共电极包括至少一个触控公共电极(也即用于触控的公共电极),每个触控公共电极通过平坦层19上的过孔G与一个屏蔽电极183相连接,且任意两个触控公共电极所连接的屏蔽电极183不同,每个与触控公共电极相连接的屏蔽电极183与触摸控制单元2相连接。由于低温多晶硅显示面板中的触控公共电极与屏蔽电极183相连接,且屏蔽电极183还连接至触摸控制单元2,也即,该触控公共电极可以作为自容式的触控电极,且屏蔽电极可以作为连接触控电极与触摸控制单元2的触摸控制线,从而实现了压感显示面板的触控功能,还减薄了具有触控功能的压感显示面板的厚度。
图2为本发明实施例提供的一种压感显示面板0的局部结构示意图,如图2所示,低温多晶硅显示面板上可以设置有多个公共电极,且每个公共电极均为触控公共电极(也即每个公共电极均通过过孔与一个屏蔽电极183相连接),每个公共电极对应十二个像素电极221。该低温多晶硅显示面板上可以形成有多条触摸控制线(也即图1中的屏蔽电极183),其中,触摸控制线M1通过过孔G1与公共电极211相连接,触摸控制线M2通过过孔G2与公共电极212相连接,也即该公共电极211可以为与触摸控制线M1相连接的触控电极,公共电极212可以为与触摸控制线M2相连接的触控电极。在进行触摸控制的时候,该触摸控制单元2可以通过触摸控制线M1向公共电极211输入触控信号,确定压感显示面板上公共电极211所在区域是否被用户触摸,以及通过触摸控制线M2向公共电极212输入触控信号,确定压感显示面板上公共电极212所在区域是否被用户触摸。
可选的,辅助电极包括有效辅助电极和连接辅助电极,有效辅助电极通过连接辅助电极与压感控制单元相连接,衬底基板上某一区域对应的有效面积为第一有效面积与第二有效面积的和,第一有效面积为:位于某一区域内的有效辅助电极在衬底基板上的正投影区域与预设电极在衬底基板上的正投影区域的重叠面积,第二有效面积为:与某一区域内的有效辅助电极相连接的连接辅助电极在衬底基板上的正投影区域与预设电极在衬底基板上的正投影区域的重叠面积;衬底基板上靠近压感控制单元的区域对应的有效面积,大于衬底基板上远离压感控制单元的区域对应的有效面积。
图3为本发明实施例提供的另一种压感显示面板的局部结构示意图,如图3所示,条状电极X1和条状电极X2通过条状电极U1连接在一起,并且通过条状电极U1连接至压感控制单元1;条状电极Y1和条状电极Y2通过条状电极U2和条状电极Z连接在一起,并且通过条状电极U2连接至压感控制单元1。
条状电极X1、条状电极X2、条状电极Y1、条状电极Y2以及条状电极Z均为衬底基板01上的有效辅助电极,条状电极U1和条状电极U2均为衬底基板01上的连接辅助电极,其中,条状电极X1与条状电极X2均形成在衬底基板01上的第一区域L1,条状电极Y1、条状电极Y2以及条状电极Z均形成在衬底基板01上的第二区域L2,第一区域L1远离压感控制单元1,第二区域L2靠近压感控制单元1。
第一区域L1内的条状电极X1和条状电极X2在衬底基板01上的正投影区域与预设电极在衬底基板01上的正投影区域的重叠面积,以及条状电极U1在衬底基板01上的正投影区域与预设电极在衬底基板01上的正投影区域的重叠面积之和,为第一区域L1的衬底基板01对应的有效面积。第二区域L2内的条状电极Y1和条状电极Y2在衬底基板01上的正投影区域与预设电极在衬底基板01上的正投影区域的重叠面积,以及条状电极U2和条状电极Z在衬底基板01上的正投影区域与预设电极在衬底基板01上的正投影区域的重叠面积之和,为第二区域L2的衬底基板01对应的有效面积。且从图3能够直观的看出,第一区域L1距离压感控制单元1较远,第二区域L2距离压杆控制单元1较近。且每个区域对应的有效面积与该区域对应的电容成正比,也即,随着该区域对应的有效面积的增大,该区域对应的电容也会增大。
第一区域L1对应的电阻为:条状电极X1、条状电极X2以及条状电极U1对应的电阻(包括条状电极X1、条状电极X2以及条状电极U1形成的电阻);第二区域L2对应的电阻为:条状电极Y1、条状电极Y2、条状电极U2以及条状电极Z对应的电阻(包括条状电极Y1、条状电极Y2、条状电极U2形成的电阻)。第一区域L1对应的电容为:条状电极X1、条状电极X2以及条状电极U1对应的电容(包括条状电极X1、条状电极X2以及条状电极U1形成的电容);第二区域L2对应的电容为:条状电极Y1、条状电极Y2、条状电极U2以及条状电极Z对应的电容(包括条状电极Y1、条状电极Y2、条状电极U2以及条状电极Z形成的电容)。
可见,第一区域L1对应的电阻大于第二区域L2对应的电阻,第一区域L1对应的电容小于第二区域L2对应的电容。条状电极X1、条状电极X2以及条状电极U1对应的电阻和电容的乘积,与条状电极Y1、条状电极Y2、条状电极U2以及条状电极Z对应的电阻和电容的乘积趋于一致,使得该压感显示面板0上的各个区域的电阻和电容的乘积均趋于一致,从而有效的提高了压感显示面板的显示效果。
也即,图3中辅助电极包括至少两个第一条状电极(如图3中的条状电极X1和条状电极X2)和至少一个第二条状电极(如图3中的条状电极U1、条状电极U2或条状电极Z),第一条状电极的长度方向垂直于第二条状电极的长度方向,第2n+1个第一条状电极与第2n+2个第一条状电极通过至少一个第二条状电极相连接,n为大于或等于0的整数。示例的,辅助电极122可以包括至少四个第一条状电极,第2n+1个第一条状电极、第2n+2个第一条状电极、第2n+3个第一条状电极与第2n+4个第一条状电极沿远离压感控制单元到靠近压感控制单元的方向依次排布,也即,第2n+1个第一条状电极和第2n+2个第一条状电极位于衬底基板11上靠近压感控制单元的区域,第2n+3个第一条状电极与第2n+4个第一条状电极位于衬底基板11上远离压感控制单元的区域。第2n+1个第一条状电极与第2n+2个第一条状电极通过p个第二条状电极相连接,第2n+3个第一条状电极与第2n+4个第一条状电极通过q个第二条状电极相连接,p和q均为大于或等于1的整数,且q大于p。
衬底基板上第2n+1个第一条状电极和第2n+2个第一条状电极所在的区域对应的有效面积,大于衬底基板上第2n+3个第一条状电极与第2n+4个第一条状电极所在的区域对应的有效面积。
综上所述,本发明实施例提供了一种压感显示面板,由于该压感显示面板包括低温多晶硅显示面板以及设置在低温多晶硅显示面板入光侧的预设电极,且该低温多晶硅显示面板中的预设功能层以及预设电极均与压感控制单元相连接,该低温多晶硅显示面板中的预设功能层可以作为压感单元中的辅助电极,也即本发明中低温多晶硅显示面板的入光侧仅仅设置有预设电极,无需在低温多晶硅显示面板的入光侧设置辅助电极和绝缘层,因此,减小了压感显示面板的厚度。
如图4所示,本发明实施例提供了一种压感显示面板的制造方法,该压感显示面板的制造方法可以包括:
步骤401、制造低温多晶硅显示面板,低温多晶硅显示面板中的阵列基板包括:衬底基板,以及形成在衬底基板上材质为导体的预设功能层;
步骤402、在低温多晶硅显示面板入光侧的设置预设电极,预设功能层在衬底基板上的正投影区域与预设电极在衬底基板上的正投影区域存在重叠区域;
步骤403、将预设功能层和预设电极均连接至压感控制单元,形成压感显示面板。
综上所述,本发明实施例提供了一种压感显示面板的制造方法,由于该方法所制造的压感显示面板包括低温多晶硅显示面板以及设置在低温多晶硅显示面板入光侧的预设电极,且该低温多晶硅显示面板中的预设功能层以及预设电极均与压感控制单元相连接,该低温多晶硅显示面板中的预设功能层可以作为压感单元中的辅助电极,也即本发明中低温多晶硅显示面板的入光侧仅仅设置有预设电极,无需在低温多晶硅显示面板的入光侧设置辅助电极和绝缘层,因此,减小了压感显示面板的厚度。
需要说明的是,本发明实施例中的预设电极为设置在低温多晶硅显示面板入光侧的中框。可选的,如图5-1所示,步骤401中制造低温多晶硅显示面板时,可以分别制造低温多晶硅显示面板的阵列基板和彩膜基板,然后将阵列基板与彩膜基板进行对盒,得到液晶盒,并在液晶盒中滴注液晶,得到该低温多晶硅显示面板。制造低温多晶硅显示面板中的彩膜基板的具体方法可以参考相关技术中制造彩膜基板的具体方法,本发明实施例在此不做赘述。
具体的,在制造低温多晶硅显示面板中的阵列基板时,可以首先在衬底基板11上涂覆遮光金属K,然后采用一次构图工艺对该遮光金属K进行处理形成如图5-2所示的预设功能层12。预设功能层12可以包括遮光图案121和辅助电极122,辅助电极122在衬底基板11上的正投影区域与预设电极在衬底基板11上的正投影区域存在重叠区域,且与遮光图案121在衬底基板11上的正投影区域不重叠,辅助电极122可以与压感控制单元相连接。该一次构图工艺可以包括光刻胶涂覆、曝光、显影、刻蚀和剥离。
在形成预设功能层12后,如图5-3所示,可以在形成有预设功能层12的衬底基板11上依次形成缓冲层13、有源层14、栅绝缘层15、栅极图案16、中间介电层17和源漏极图案18,需要说明的是,该源漏极图案18可以包括:源极181、漏极182和屏蔽电极183,辅助电极122在衬底基板11上的正投影区域位于屏蔽电极183在衬底基板11上的正投影区域内。需要说明的是,在形成源漏极图案18时,也可以首先在栅绝缘层上形成一层金属层,然后采用一次构图工艺对形成的金属层进行处理,得到该源漏极图案18,由于本发明实施例中的源漏极图案18与相关技术中的源漏极图案不同,因此,本发明实施例中在形成源漏极图案18时采用的掩膜板与相关技术中形成源漏极图案的掩膜板不同。
然后,如图5-4所示,可以在形成有源漏极图案18的衬底基板11上依次形成平坦层19、公共电极图案20、钝化层21和像素电极图案22。其中,公共电极图案20可以包括阵列排布的多个公共电极,多个公共电极可以包括至少一个触控公共电极,每个触控公共电极通过平坦层上的过孔(也即,在形成平坦层后,还需要在平坦层上形成过孔,之后才在形成有过孔的平坦层上形成公共电极图案)与一个屏蔽电极相连接,且任意两个触控公共电极所连接的屏蔽电极不同,每个与触控公共电极相连接的屏蔽电极与触摸控制单元相连接。
本发明实施例中,辅助电极包括有效辅助电极和连接辅助电极,有效辅助电极通过连接辅助电极与压感控制单元相连接,衬底基板上某一区域对应的有效面积为第一有效面积与第二有效面积的和,第一有效面积为:位于某一区域内的有效辅助电极在衬底基板上的正投影区域与预设电极在衬底基板上的正投影区域的重叠面积,第二有效面积为:与某一区域内的有效辅助电极相连接的连接辅助电极在衬底基板上的正投影区域与预设电极在衬底基板上的正投影区域的重叠面积;衬底基板上靠近压感控制单元的区域对应的有效面积,大于衬底基板上远离压感控制单元的区域对应的有效面积。低温多晶硅显示面板中的彩膜基板包括黑矩阵,辅助电极在衬底基板上的正投影区域位于黑矩阵在衬底基板上的正投影区域内。
辅助电极可以包括至少两个第一条状电极和至少一个第二条状电极,第一条状电极的长度方向垂直于第二条状电极的长度方向,第2n+1个第一条状电极与第2n+2个第一条状电极通过至少一个第二条状电极相连接,n为大于或等于0的整数。示例的,辅助电极包括至少四个第一条状电极,第2n+1个第一条状电极、第2n+2个第一条状电极、第2n+3个第一条状电极与第2n+4个第一条状电极沿远离压感控制单元到靠近压感控制单元的方向依次排布,第2n+1个第一条状电极与第2n+2个第一条状电极通过p个第二条状电极相连接,第2n+3个第一条状电极与第2n+4个第一条状电极通过q个第二条状电极相连接,q和q均为大于或等于1的整数,且q大于p。
综上所述,本发明实施例提供了一种压感显示面板的制造方法,由于该方法所制造的压感显示面板包括低温多晶硅显示面板以及设置在低温多晶硅显示面板入光侧的预设电极,且该低温多晶硅显示面板中的预设功能层以及预设电极均与压感控制单元相连接,该低温多晶硅显示面板中的预设功能层可以作为压感单元中的辅助电极,也即本发明中低温多晶硅显示面板的入光侧仅仅设置有预设电极,无需在低温多晶硅显示面板的入光侧设置辅助电极和绝缘层,因此,减小了压感显示面板的厚度。
本发明实施例提供了一种压感显示装置,该压感显示装置可以包括图1、图2或图3所示的压感显示面板0。该压感显示装置可以为:液晶面板、电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
综上所述,本发明实施例提供了一种压感显示装置,由于该压感显示装置中的压感显示面板包括低温多晶硅显示面板以及设置在低温多晶硅显示面板入光侧的预设电极,且该低温多晶硅显示面板中的预设功能层以及预设电极均与压感控制单元相连接,该低温多晶硅显示面板中的预设功能层可以作为压感单元中的辅助电极,也即本发明中低温多晶硅显示面板的入光侧仅仅设置有预设电极,无需在低温多晶硅显示面板的入光侧设置辅助电极和绝缘层,因此,减小了压感显示面板的厚度。
所属领域的技术人员可以清楚地了解到,为描述的方便和简洁,上述描述的压感显示面板实施例、压感显示面板的制造方法实施例以及上述描述的压感显示装置实施例均可以互相参考,在此不再赘述。
以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (14)

1.一种压感显示面板,其特征在于,所述压感显示面板包括:低温多晶硅显示面板,以及设置在所述低温多晶硅显示面板入光侧的预设电极;
所述低温多晶硅显示面板中的阵列基板包括:衬底基板,以及形成在所述衬底基板上材质为导体的预设功能层;
其中,所述预设功能层在所述衬底基板上的正投影区域与所述预设电极在所述衬底基板上的正投影区域存在重叠区域,且所述预设功能层和所述预设电极均与压感控制单元相连接。
2.根据权利要求1所述的压感显示面板,其特征在于,所述预设功能层包括遮光图案和辅助电极,
所述辅助电极在所述衬底基板上的正投影区域与所述预设电极在所述衬底基板上的正投影区域存在重叠区域,且与所述遮光图案在所述衬底基板上的正投影区域不重叠,所述辅助电极与所述压感控制单元相连接。
3.根据权利要求2所述的压感显示面板,其特征在于,形成有所述预设功能层的衬底基板上还依次形成有缓冲层、有源层、栅绝缘层、栅极图案、中间介电层和源漏极图案;
所述源漏极图案包括:源极、漏极和屏蔽电极,所述辅助电极在所述衬底基板上的正投影区域位于所述屏蔽电极在所述衬底基板上的正投影区域内。
4.根据权利要求3所述的压感显示面板,其特征在于,形成有所述源漏极图案的衬底基板上还依次形成有平坦层、公共电极图案、钝化层和像素电极图案;
所述公共电极图案包括阵列排布的多个公共电极,所述多个公共电极包括至少一个触控公共电极,每个所述触控公共电极通过平坦层上的过孔与一个屏蔽电极相连接,且任意两个触控公共电极所连接的屏蔽电极不同,每个与触控公共电极相连接的屏蔽电极与触摸控制单元相连接。
5.根据权利要求2所述的压感显示面板,其特征在于,所述辅助电极包括有效辅助电极和连接辅助电极,所述有效辅助电极通过连接辅助电极与压感控制单元相连接,
所述衬底基板上某一区域对应的有效面积为第一有效面积与第二有效面积的和,所述第一有效面积为:位于所述某一区域内的有效辅助电极在所述衬底基板上的正投影区域与预设电极在所述衬底基板上的正投影区域的重叠面积,所述第二有效面积为:与所述某一区域内的有效辅助电极相连接的连接辅助电极在所述衬底基板上的正投影区域与预设电极在所述衬底基板上的正投影区域的重叠面积;
所述衬底基板上靠近所述压感控制单元的区域对应的有效面积,大于所述衬底基板上远离所述压感控制单元的区域对应的有效面积。
6.根据权利要求2所述的压感显示面板,其特征在于,所述低温多晶硅显示面板中的彩膜基板包括黑矩阵,
所述辅助电极在所述衬底基板上的正投影区域位于所述黑矩阵在所述衬底基板上的正投影区域内。
7.根据权利要求5所述的压感显示面板,其特征在于,所述辅助电极包括至少两个第一条状电极和至少一个第二条状电极,
所述第一条状电极的长度方向垂直于所述第二条状电极的长度方向,第2n+1个第一条状电极与第2n+2个第一条状电极通过至少一个第二条状电极相连接,所述n为大于或等于0的整数。
8.根据权利要求7所述的压感显示面板,其特征在于,所述辅助电极包括至少四个第一条状电极,第2n+1个第一条状电极、第2n+2个第一条状电极、第2n+3个第一条状电极与第2n+4个第一条状电极沿远离所述压感控制单元到靠近所述压感控制单元的方向依次排布,
所述第2n+1个第一条状电极与所述第2n+2个第一条状电极通过p个第二条状电极相连接,所述第2n+3个第一条状电极与所述第2n+4个第一条状电极通过q个第二条状电极相连接,所述p和所述q均为大于或等于1的整数,且所述q大于所述p。
9.根据权利要求1所述的压感显示面板,其特征在于,所述预设电极为设置在所述低温多晶硅显示面板入光侧的中框。
10.一种压感显示面板的制造方法,其特征在于,用于制造如权利要求1至9任一所述的压感显示面板,所述方法包括:
制造低温多晶硅显示面板,所述低温多晶硅显示面板中的阵列基板包括:衬底基板,以及形成在所述衬底基板上材质为导体的预设功能层;
在所述低温多晶硅显示面板入光侧的设置预设电极,所述预设功能层在所述衬底基板上的正投影区域与所述预设电极在所述衬底基板上的正投影区域存在重叠区域;
将所述预设功能层和所述预设电极均连接至压感控制单元,形成压感显示面板。
11.根据权利要求10所述的方法,其特征在于,所述制造低温多晶硅显示面板,包括:
在所述衬底基板上形成所述预设功能层,所述预设功能层包括遮光图案和辅助电极,所述辅助电极在所述衬底基板上的正投影区域与所述预设电极在所述衬底基板上的正投影区域存在重叠区域,且与所述遮光图案在所述衬底基板上的正投影区域不重叠,所述辅助电极与所述压感控制单元相连接。
12.根据权利要求11所述的方法,其特征在于,所述制造低温多晶硅显示面板,还包括:
在形成有所述预设功能层的衬底基板上依次形成缓冲层、有源层、栅绝缘层、栅极图案、中间介电层和源漏极图案,所述源漏极图案包括:源极、漏极和屏蔽电极,所述辅助电极在所述衬底基板上的正投影区域位于所述屏蔽电极在所述衬底基板上的正投影区域内。
13.根据权利要求12所述的方法,其特征在于,所述制造低温多晶硅显示面板,还包括:
在形成有所述源漏极图案的衬底基板上依次形成平坦层、公共电极图案、钝化层和像素电极图案,所述公共电极图案包括阵列排布的多个公共电极,所述多个公共电极包括至少一个触控公共电极,每个所述触控公共电极通过平坦层上的过孔与一个屏蔽电极相连接,且任意两个触控公共电极所连接的屏蔽电极不同,每个与所述触控公共电极相连接的屏蔽电极与触摸控制单元相连接。
14.一种压感显示装置,其特征在于,所述压感显示装置包括权利要求1至9任一所述的压感显示面板。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107490911A (zh) * 2017-08-15 2017-12-19 昆山龙腾光电有限公司 阵列基板及其制作方法和显示面板
WO2018054174A1 (zh) * 2016-09-22 2018-03-29 京东方科技集团股份有限公司 压感显示面板及其制造方法、压感显示装置
CN108231847A (zh) * 2018-01-02 2018-06-29 京东方科技集团股份有限公司 显示面板及其制造方法、显示装置
CN109597234A (zh) * 2017-10-03 2019-04-09 夏普株式会社 显示面板

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019032456A (ja) * 2017-08-09 2019-02-28 株式会社ジャパンディスプレイ 押圧センサを備える表示装置
CN111722445A (zh) * 2019-03-22 2020-09-29 咸阳彩虹光电科技有限公司 一种阵列基板、液晶显示面板及显示装置
CN111538443A (zh) * 2020-06-02 2020-08-14 京东方科技集团股份有限公司 触控显示面板及其制备方法、触控显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040173372A1 (en) * 2003-03-04 2004-09-09 Yushi Suda Electronic component for adhesion of a plurality of electrodes and method of mounting the same
CN105739790A (zh) * 2016-04-25 2016-07-06 上海天马微电子有限公司 一种触控显示面板
CN105824469A (zh) * 2016-03-15 2016-08-03 京东方科技集团股份有限公司 一种显示基板、内嵌式触摸屏及显示装置
CN105911736A (zh) * 2016-06-20 2016-08-31 上海天马微电子有限公司 一种显示装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101524449B1 (ko) 2011-12-22 2015-06-02 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
KR20160048424A (ko) * 2014-10-24 2016-05-04 주식회사 하이딥 터치 입력 장치
CN103676358B (zh) * 2013-12-17 2017-02-22 京东方科技集团股份有限公司 显示基板及其制作方法、触摸屏和显示装置
CN106292035B (zh) * 2016-09-22 2018-05-08 京东方科技集团股份有限公司 压感显示面板及其制造方法、压感显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040173372A1 (en) * 2003-03-04 2004-09-09 Yushi Suda Electronic component for adhesion of a plurality of electrodes and method of mounting the same
CN105824469A (zh) * 2016-03-15 2016-08-03 京东方科技集团股份有限公司 一种显示基板、内嵌式触摸屏及显示装置
CN105739790A (zh) * 2016-04-25 2016-07-06 上海天马微电子有限公司 一种触控显示面板
CN105911736A (zh) * 2016-06-20 2016-08-31 上海天马微电子有限公司 一种显示装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018054174A1 (zh) * 2016-09-22 2018-03-29 京东方科技集团股份有限公司 压感显示面板及其制造方法、压感显示装置
US10509501B2 (en) 2016-09-22 2019-12-17 Boe Technology Group Co., Ltd. Pressure-sensitive display panel, manufacturing method thereof and pressure-sensitive display device
CN107490911A (zh) * 2017-08-15 2017-12-19 昆山龙腾光电有限公司 阵列基板及其制作方法和显示面板
CN109597234A (zh) * 2017-10-03 2019-04-09 夏普株式会社 显示面板
CN108231847A (zh) * 2018-01-02 2018-06-29 京东方科技集团股份有限公司 显示面板及其制造方法、显示装置
CN108231847B (zh) * 2018-01-02 2020-07-10 京东方科技集团股份有限公司 显示面板及其制造方法、显示装置

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