CN105529319B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN105529319B
CN105529319B CN201510673980.6A CN201510673980A CN105529319B CN 105529319 B CN105529319 B CN 105529319B CN 201510673980 A CN201510673980 A CN 201510673980A CN 105529319 B CN105529319 B CN 105529319B
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Prior art keywords
lead terminal
semiconductor device
semiconductor element
semiconductor
recess portion
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CN201510673980.6A
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Chinese (zh)
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CN105529319A (zh
Inventor
石山祐介
井本裕儿
藤野纯司
浅田晋助
石原三纪夫
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to CN201611055874.2A priority Critical patent/CN106952877B/zh
Priority to CN201910281594.0A priority patent/CN110071072B/zh
Publication of CN105529319A publication Critical patent/CN105529319A/zh
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Publication of CN105529319B publication Critical patent/CN105529319B/zh
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/8485—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
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  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Families Citing this family (14)

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Publication number Priority date Publication date Assignee Title
US10204847B2 (en) * 2016-10-06 2019-02-12 Infineon Technologies Americas Corp. Multi-phase common contact package
CN109952639B (zh) 2016-11-11 2023-06-27 三菱电机株式会社 半导体装置、逆变器单元及汽车
JP6776840B2 (ja) * 2016-11-21 2020-10-28 オムロン株式会社 電子装置およびその製造方法
JP6806170B2 (ja) * 2017-02-09 2021-01-06 三菱電機株式会社 半導体装置及び電力変換装置
JP6474939B2 (ja) * 2017-02-20 2019-02-27 新電元工業株式会社 電子装置及び接続子
WO2019116457A1 (ja) * 2017-12-13 2019-06-20 三菱電機株式会社 半導体装置及び電力変換装置
JP7065953B2 (ja) * 2018-05-08 2022-05-12 三菱電機株式会社 配線部材及びこれを備えた半導体モジュール
US12176315B2 (en) 2018-11-30 2024-12-24 Hitachi Metals, Ltd. Electrical connection member, electrical connection structure, and method for manufacturing electrical connection member
US11387210B2 (en) * 2019-03-15 2022-07-12 Fuji Electric Co., Ltd. Semiconductor module and manufacturing method therefor
US12131971B2 (en) * 2019-07-30 2024-10-29 Sansha Electric Manufacturing Co., Ltd. Semiconductor module
JP7534407B2 (ja) * 2020-06-29 2024-08-14 京セラ株式会社 配線基体及び電子装置
JP7301805B2 (ja) * 2020-09-24 2023-07-03 株式会社東芝 半導体モジュール
US20250219007A1 (en) * 2022-04-20 2025-07-03 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device
WO2025253910A1 (ja) * 2024-06-03 2025-12-11 三菱電機株式会社 パワーモジュールおよび電力変換装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1750256A (zh) * 2004-09-16 2006-03-22 夏普株式会社 半导体光器件、其制造方法、引线框以及电子设备
CN1753170A (zh) * 2004-09-22 2006-03-29 夏普株式会社 光半导体装置、光通信装置和电子设备
JP2007173703A (ja) * 2005-12-26 2007-07-05 Mitsubishi Electric Corp 半導体装置
JP2008218688A (ja) * 2007-03-05 2008-09-18 Denso Corp 半導体装置
JP2010147053A (ja) * 2008-12-16 2010-07-01 Fuji Electric Systems Co Ltd 半導体装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01276655A (ja) 1988-04-27 1989-11-07 Japan Radio Co Ltd トランスファーモールド型集積回路
JPH065742A (ja) 1992-06-22 1994-01-14 Mitsubishi Electric Corp 半導体装置、その封止に用いられる樹脂および半導体装置の製造方法
JPH06120406A (ja) 1992-10-02 1994-04-28 Mitsubishi Electric Corp 半導体装置
JP3866880B2 (ja) 1999-06-28 2007-01-10 株式会社日立製作所 樹脂封止型電子装置
JP2005012085A (ja) * 2003-06-20 2005-01-13 Toyota Motor Corp 半導体モジュールの電極構造
JP4628687B2 (ja) * 2004-03-09 2011-02-09 ルネサスエレクトロニクス株式会社 半導体装置
JP4468115B2 (ja) * 2004-08-30 2010-05-26 株式会社ルネサステクノロジ 半導体装置
DE102005043928B4 (de) * 2004-09-16 2011-08-18 Sharp Kk Optisches Halbleiterbauteil und Verfahren zu dessen Herstellung
TWI280673B (en) * 2004-09-22 2007-05-01 Sharp Kk Optical semiconductor device, optical communication device, and electronic equipment
JP4492448B2 (ja) 2005-06-15 2010-06-30 株式会社日立製作所 半導体パワーモジュール
JP4455488B2 (ja) * 2005-12-19 2010-04-21 三菱電機株式会社 半導体装置
JP2008016529A (ja) * 2006-07-04 2008-01-24 Renesas Technology Corp 半導体装置
JP5384913B2 (ja) * 2008-11-18 2014-01-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5251991B2 (ja) * 2011-01-14 2013-07-31 トヨタ自動車株式会社 半導体モジュール
JP5665572B2 (ja) 2011-01-28 2015-02-04 三菱電機株式会社 半導体装置および半導体装置の製造方法
US9165848B2 (en) * 2011-09-29 2015-10-20 Toyota Jidosha Kabushiki Kaisha Semiconductor device
JP2013197573A (ja) 2012-03-23 2013-09-30 Mitsubishi Electric Corp 半導体装置
CN103545268B (zh) * 2012-07-09 2016-04-13 万国半导体股份有限公司 底部源极的功率器件及制备方法
JP6230238B2 (ja) * 2013-02-06 2017-11-15 三菱電機株式会社 半導体装置及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1750256A (zh) * 2004-09-16 2006-03-22 夏普株式会社 半导体光器件、其制造方法、引线框以及电子设备
CN1753170A (zh) * 2004-09-22 2006-03-29 夏普株式会社 光半导体装置、光通信装置和电子设备
JP2007173703A (ja) * 2005-12-26 2007-07-05 Mitsubishi Electric Corp 半導体装置
JP2008218688A (ja) * 2007-03-05 2008-09-18 Denso Corp 半導体装置
JP2010147053A (ja) * 2008-12-16 2010-07-01 Fuji Electric Systems Co Ltd 半導体装置

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DE102015215786A1 (de) 2016-04-21
CN110071072A (zh) 2019-07-30
JP6385234B2 (ja) 2018-09-05
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CN110071072B (zh) 2023-12-01
US20160111379A1 (en) 2016-04-21

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