CN105453264B - 通过改善的SiGe刻面改善硅化物形成 - Google Patents

通过改善的SiGe刻面改善硅化物形成 Download PDF

Info

Publication number
CN105453264B
CN105453264B CN201480043691.1A CN201480043691A CN105453264B CN 105453264 B CN105453264 B CN 105453264B CN 201480043691 A CN201480043691 A CN 201480043691A CN 105453264 B CN105453264 B CN 105453264B
Authority
CN
China
Prior art keywords
grid structure
grid
source
field oxide
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480043691.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN105453264A (zh
Inventor
沙尚克·S·埃克布特
林关勇
埃比尼泽·伊舒
崔尹升
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN105453264A publication Critical patent/CN105453264A/zh
Application granted granted Critical
Publication of CN105453264B publication Critical patent/CN105453264B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H10D84/0133—Manufacturing common source or drain regions between multiple IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/0137—Manufacturing their gate conductors the gate conductors being silicided
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Thin Film Transistor (AREA)
CN201480043691.1A 2013-08-22 2014-08-22 通过改善的SiGe刻面改善硅化物形成 Active CN105453264B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/972,973 US9093298B2 (en) 2013-08-22 2013-08-22 Silicide formation due to improved SiGe faceting
US13/972,973 2013-08-22
PCT/US2014/052253 WO2015027141A1 (en) 2013-08-22 2014-08-22 Improved silicide formation by improved sige faceting

Publications (2)

Publication Number Publication Date
CN105453264A CN105453264A (zh) 2016-03-30
CN105453264B true CN105453264B (zh) 2019-05-03

Family

ID=52479609

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480043691.1A Active CN105453264B (zh) 2013-08-22 2014-08-22 通过改善的SiGe刻面改善硅化物形成

Country Status (5)

Country Link
US (3) US9093298B2 (cg-RX-API-DMAC10.html)
EP (1) EP3036769B1 (cg-RX-API-DMAC10.html)
JP (1) JP6419184B2 (cg-RX-API-DMAC10.html)
CN (1) CN105453264B (cg-RX-API-DMAC10.html)
WO (1) WO2015027141A1 (cg-RX-API-DMAC10.html)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9847225B2 (en) * 2011-11-15 2017-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing the same
US9093298B2 (en) * 2013-08-22 2015-07-28 Texas Instruments Incorporated Silicide formation due to improved SiGe faceting
US9721947B2 (en) * 2014-02-12 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing
KR102200922B1 (ko) * 2014-07-17 2021-01-11 삼성전자주식회사 절연 패턴을 갖는 반도체 소자 및 그 형성 방법
US9385197B2 (en) 2014-08-29 2016-07-05 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor structure with contact over source/drain structure and method for forming the same
US9324820B1 (en) * 2014-10-28 2016-04-26 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming semiconductor structure with metallic layer over source/drain structure
US10026837B2 (en) 2015-09-03 2018-07-17 Texas Instruments Incorporated Embedded SiGe process for multi-threshold PMOS transistors
US20170141228A1 (en) * 2015-11-16 2017-05-18 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor and manufacturing method thereof
US10141443B2 (en) * 2016-03-24 2018-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices FinFET devices with optimized strained-sourece-drain recess profiles and methods of forming the same
US10177241B2 (en) 2016-10-28 2019-01-08 Globalfoundries Inc. Methods of forming a gate contact for a transistor above the active region and an air gap adjacent the gate of the transistor
US9899321B1 (en) * 2016-12-09 2018-02-20 Globalfoundries Inc. Methods of forming a gate contact for a semiconductor device above the active region
US10297675B1 (en) * 2017-10-27 2019-05-21 Globalfoundries Inc. Dual-curvature cavity for epitaxial semiconductor growth
US10714334B2 (en) 2017-11-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive feature formation and structure
US11411095B2 (en) * 2017-11-30 2022-08-09 Intel Corporation Epitaxial source or drain structures for advanced integrated circuit structure fabrication
US10796968B2 (en) * 2017-11-30 2020-10-06 Intel Corporation Dual metal silicide structures for advanced integrated circuit structure fabrication
US10580875B2 (en) * 2018-01-17 2020-03-03 Globalfoundries Inc. Middle of line structures
US10121517B1 (en) 2018-03-16 2018-11-06 Videolicious, Inc. Systems and methods for generating audio or video presentation heat maps
US10388770B1 (en) 2018-03-19 2019-08-20 Globalfoundries Inc. Gate and source/drain contact structures positioned above an active region of a transistor device
CN110634743B (zh) * 2018-06-25 2023-06-09 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1933113A (zh) * 2005-09-15 2007-03-21 中芯国际集成电路制造(上海)有限公司 形成硅锗源漏结构的集成工艺方法
CN101330006A (zh) * 2007-06-18 2008-12-24 中芯国际集成电路制造(上海)有限公司 栅极结构及其制造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5571733A (en) * 1995-05-12 1996-11-05 Micron Technology, Inc. Method of forming CMOS integrated circuitry
US6107157A (en) * 1998-02-27 2000-08-22 Micron Technology, Inc. Method and apparatus for trench isolation process with pad gate and trench edge spacer elimination
US6448129B1 (en) * 2000-01-24 2002-09-10 Micron Technology, Inc. Applying epitaxial silicon in disposable spacer flow
JP5380827B2 (ja) * 2006-12-11 2014-01-08 ソニー株式会社 半導体装置の製造方法
KR101409374B1 (ko) * 2008-04-10 2014-06-19 삼성전자 주식회사 반도체 집적 회로 장치의 제조 방법 및 그에 의해 제조된반도체 집적 회로 장치
US7838366B2 (en) * 2008-04-11 2010-11-23 United Microelectronics Corp. Method for fabricating a metal gate structure
KR101050405B1 (ko) * 2009-07-03 2011-07-19 주식회사 하이닉스반도체 스트레인드채널을 갖는 반도체장치 제조 방법
DE102009039522B4 (de) * 2009-08-31 2015-08-13 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Verfahren zur Herstellung eines Halbleiterbauelements mit vergrabener Ätzstoppschicht in Grabenisolationsstrukturen für eine bessere Oberflächenebenheit in dicht gepackten Halbleiterbauelementen
US8455859B2 (en) * 2009-10-01 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Strained structure of semiconductor device
US8377784B2 (en) * 2010-04-22 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a semiconductor device
US9064688B2 (en) * 2010-05-20 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. Performing enhanced cleaning in the formation of MOS devices
US8236659B2 (en) * 2010-06-16 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Source and drain feature profile for improving device performance and method of manufacturing same
US8680625B2 (en) 2010-10-15 2014-03-25 Taiwan Semiconductor Manufacturing Company, Ltd. Facet-free semiconductor device
US8435848B2 (en) * 2010-10-28 2013-05-07 Texas Instruments Incorporated PMOS SiGe-last integration process
CN102456739A (zh) * 2010-10-28 2012-05-16 中国科学院微电子研究所 半导体结构及其形成方法
US8455930B2 (en) * 2011-01-05 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Strained semiconductor device with facets
US8643069B2 (en) * 2011-07-12 2014-02-04 United Microelectronics Corp. Semiconductor device having metal gate and manufacturing method thereof
US8835267B2 (en) * 2011-09-29 2014-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and fabrication method thereof
US8927374B2 (en) * 2011-10-04 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and fabrication method thereof
KR20130045716A (ko) * 2011-10-26 2013-05-06 삼성전자주식회사 반도체 소자 및 그 제조 방법
US8735255B2 (en) * 2012-05-01 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device
US9219129B2 (en) * 2012-05-10 2015-12-22 International Business Machines Corporation Inverted thin channel mosfet with self-aligned expanded source/drain
US9006071B2 (en) * 2013-03-27 2015-04-14 International Business Machines Corporation Thin channel MOSFET with silicide local interconnect
US9093298B2 (en) * 2013-08-22 2015-07-28 Texas Instruments Incorporated Silicide formation due to improved SiGe faceting

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1933113A (zh) * 2005-09-15 2007-03-21 中芯国际集成电路制造(上海)有限公司 形成硅锗源漏结构的集成工艺方法
CN101330006A (zh) * 2007-06-18 2008-12-24 中芯国际集成电路制造(上海)有限公司 栅极结构及其制造方法

Also Published As

Publication number Publication date
US9202883B2 (en) 2015-12-01
CN105453264A (zh) 2016-03-30
JP6419184B2 (ja) 2018-11-07
EP3036769A4 (en) 2017-04-12
WO2015027141A1 (en) 2015-02-26
US20160027888A1 (en) 2016-01-28
EP3036769B1 (en) 2021-06-30
US9093298B2 (en) 2015-07-28
EP3036769A1 (en) 2016-06-29
JP2016532296A (ja) 2016-10-13
US20150054084A1 (en) 2015-02-26
US9406769B2 (en) 2016-08-02
US20150287801A1 (en) 2015-10-08

Similar Documents

Publication Publication Date Title
US20260013208A1 (en) Selective removal of semiconductor fins
JP6419184B2 (ja) 改善されたＳｉＧｅファセットによる改善されたシリサイド形成
TWI835349B (zh) 半導體裝置及其形成方法
JP5746238B2 (ja) バルク基板上に作製される分離トライゲートトランジスタ
CN106057867B (zh) 半导体器件
US9093326B2 (en) Electrically isolated SiGe fin formation by local oxidation
CN105097649B (zh) 半导体结构的形成方法
KR101784324B1 (ko) 반도체 장치의 제조 방법
KR102523125B1 (ko) 반도체 소자
CN105990440B (zh) 半导体器件结构的结构和形成方法
US8658504B2 (en) Method for manufacturing semiconductor device
CN103854988B (zh) 具有一致的鳍型场效晶体管栅极高度的结构及其形成方法
KR20190003295A (ko) 반도체 디바이스 및 방법
TWI853164B (zh) 用於n型及p型鰭式場效電晶體之不同源極/汲極輪廓
CN104733315B (zh) 半导体结构的形成方法
CN106531797A (zh) 半导体器件及其形成方法
CN104103586B (zh) 半导体器件的形成方法
CN106548931A (zh) 制造半导体器件的方法和图案化方法
CN110718548B (zh) 半导体器件
JP2012089772A (ja) 半導体装置の製造方法
JP2019212663A (ja) 半導体装置の製造方法
CN220963350U (zh) 集成芯片
KR20200142152A (ko) 반도체 소자의 제조 방법
JP2012089779A (ja) 半導体装置および半導体装置の製造方法
JP2011014750A (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant