CN105453251B - 在基板上从不同材料形成鳍的方法 - Google Patents

在基板上从不同材料形成鳍的方法 Download PDF

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Publication number
CN105453251B
CN105453251B CN201480043551.4A CN201480043551A CN105453251B CN 105453251 B CN105453251 B CN 105453251B CN 201480043551 A CN201480043551 A CN 201480043551A CN 105453251 B CN105453251 B CN 105453251B
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layer
coating
oxide skin
substrate
top surface
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Expired - Fee Related
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CN201480043551.4A
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English (en)
Chinese (zh)
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CN105453251A (zh
Inventor
S·S·宋
Z·王
C·F·耶普
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/292—Non-planar channels of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/011—Manufacture or treatment comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201480043551.4A 2013-08-01 2014-07-25 在基板上从不同材料形成鳍的方法 Expired - Fee Related CN105453251B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/956,398 2013-08-01
US13/956,398 US9396931B2 (en) 2013-08-01 2013-08-01 Method of forming fins from different materials on a substrate
PCT/US2014/048270 WO2015017283A1 (en) 2013-08-01 2014-07-25 Method of forming fins from different materials on a substrate

Publications (2)

Publication Number Publication Date
CN105453251A CN105453251A (zh) 2016-03-30
CN105453251B true CN105453251B (zh) 2019-05-28

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CN201480043551.4A Expired - Fee Related CN105453251B (zh) 2013-08-01 2014-07-25 在基板上从不同材料形成鳍的方法

Country Status (6)

Country Link
US (2) US9396931B2 (https=)
EP (1) EP3028301A1 (https=)
JP (1) JP2016529708A (https=)
KR (1) KR20160038031A (https=)
CN (1) CN105453251B (https=)
WO (1) WO2015017283A1 (https=)

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US9129863B2 (en) 2014-02-11 2015-09-08 International Business Machines Corporation Method to form dual channel group III-V and Si/Ge FINFET CMOS
US9123585B1 (en) * 2014-02-11 2015-09-01 International Business Machines Corporation Method to form group III-V and Si/Ge FINFET on insulator
US9564518B2 (en) * 2014-09-24 2017-02-07 Qualcomm Incorporated Method and apparatus for source-drain junction formation in a FinFET with in-situ doping
US9524987B2 (en) 2014-10-21 2016-12-20 United Microelectronics Corp. Fin-shaped structure and method thereof
US20160358827A1 (en) * 2014-10-21 2016-12-08 United Microelectronics Corp. Method of forming fin-shaped structure
US9633908B2 (en) 2015-06-16 2017-04-25 International Business Machines Corporation Method for forming a semiconductor structure containing high mobility semiconductor channel materials
CN107660310B (zh) * 2015-06-26 2022-03-08 英特尔公司 异质外延n型晶体管与p型晶体管的基于阱的集成
US9679899B2 (en) * 2015-08-24 2017-06-13 Stmicroelectronics, Inc. Co-integration of tensile silicon and compressive silicon germanium
CN109155994B (zh) 2016-05-17 2021-08-03 华为技术有限公司 一种用户面资源管理方法、用户面网元及控制面网元

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CN1826690A (zh) * 2003-07-21 2006-08-30 国际商业机器公司 沿多个表面具有应变晶格结构的fet沟道
CN101065840A (zh) * 2004-12-08 2007-10-31 先进微装置公司 半导体装置以及制造包括多堆栈混合定向层之半导体装置之方法

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JP2006012995A (ja) * 2004-06-23 2006-01-12 Toshiba Corp 半導体装置及びその製造方法
JP2008505488A (ja) * 2004-06-30 2008-02-21 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 特徴の異なる結晶性半導体領域を有する基板の形成技術
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CN101065840A (zh) * 2004-12-08 2007-10-31 先进微装置公司 半导体装置以及制造包括多堆栈混合定向层之半导体装置之方法

Also Published As

Publication number Publication date
KR20160038031A (ko) 2016-04-06
WO2015017283A1 (en) 2015-02-05
US20160322391A1 (en) 2016-11-03
CN105453251A (zh) 2016-03-30
US9396931B2 (en) 2016-07-19
US20150035019A1 (en) 2015-02-05
JP2016529708A (ja) 2016-09-23
EP3028301A1 (en) 2016-06-08

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Granted publication date: 20190528

Termination date: 20210725