CN105392912B - 靶准备 - Google Patents

靶准备 Download PDF

Info

Publication number
CN105392912B
CN105392912B CN201480038031.4A CN201480038031A CN105392912B CN 105392912 B CN105392912 B CN 105392912B CN 201480038031 A CN201480038031 A CN 201480038031A CN 105392912 B CN105392912 B CN 105392912B
Authority
CN
China
Prior art keywords
substrate
target
coating
coated
target surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480038031.4A
Other languages
English (en)
Other versions
CN105392912A (zh
Inventor
徳尼斯·库拉珀夫
西格弗里德·克拉斯尼策尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oerlikon Surface Solutions AG Pfaeffikon
Original Assignee
Oerlikon Surface Solutions AG Truebbach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions AG Truebbach filed Critical Oerlikon Surface Solutions AG Truebbach
Publication of CN105392912A publication Critical patent/CN105392912A/zh
Application granted granted Critical
Publication of CN105392912B publication Critical patent/CN105392912B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

本发明涉及一种工件涂覆方法，包括以下步骤：给涂覆室装入待涂覆工件；关闭该涂覆室并将该涂覆室抽真空至预定的工艺过程压力；启动包括靶作为材料源的涂覆源且来自靶表面的微粒由此被朝向该基材加速，其特征是，在靶表面和基材之间一直设置屏蔽直到该靶被修整，在此期间内所述待涂覆基材至少部分接受预处理。

Description

靶准备
本发明涉及基材涂覆方法。
本发明尤其涉及真空气相沉积准备方法，其中，靶被用作材料源且微粒从靶表面飞向基材并沉积在基材上。通常，此时还采用反应气体，该反应气体的原子和/或分子与所述微粒反应，从而相应的化学化合物沉积在基材上。在此情况下存在反应涂覆工艺。
公开了一些这样的涂覆工艺。例如在此仅仅提到磁控溅射和电火花气化。相应的靶表面受到不同的周围环境影响。例如为了涂覆室的装卸料在许多情况下要打开室门，因而靶表面遇到正常室内气氛。有时当因反应气体而存在“靶毒化”时，靶表面也须专门接受机械处理如喷砂。所有这些都导致靶表面因不同环境影响而在涂覆过程之间是不同的。如果用这样的靶表面马上就开始涂覆，则出现不可再现的结果。因为尤其涂覆初始阶段是不可再现的，故这尤其显著影响到层膜附着性。但是，主要在耐磨保护范围内，在附着性和其它层膜性能方面的这种不可估计的差异是不容忽视的。
为了应对这一点，在涂覆室关闭和排真空之后先如此开始涂覆，即借助盖子在一定时间内阻止涂覆材料降落并沉积在基材上。这样的过程被称为靶修整(Targetkonditionierung)。
在此，靶修整可能有时耗用半个小时或更长时间。图1示出在此修整过程中在含铬的靶之前点燃的等离子体的光学信号。能清楚看到，在约30分钟后所述OES信号才稳定，这是所述修整已完成且在靶表面上不会再有明显变化的标志。为此所需的时间相应导致了涂覆时间(从涂覆设备装料算起至涂覆之后卸料为止)的延长。
已经提到了对于许多应用来说需要良好的层膜附着性。为获得良好的层膜附着性，基材例如须具有干净的表面。在此，清理待涂覆基材原则上是在涂覆室外进行的。但一些基材表面准备处理步骤只在涂覆室封闭的情况下在室内真空下进行。尤其有利的是：基材表面在即将涂覆之前接受蚀刻法处理，尤其最好借助等离子体(即等离子体蚀刻法)处理。此时十分常见的是：从表面去除将近1μm。通过这种方式，去除最近的污物颗粒，并且就某些基材材料而言，出现靠近表面的浓度稀薄化，由此一来，将在随后涂覆步骤中施加的层膜材料的附着性被显著提高。许多情况下，通过预处理且尤其通过等离子体蚀刻来活化基材表面，在这又有助于更好的附着。但此时不利的是该方法步骤也相当耗时，因而在涂覆室关闭且开始抽真空后，有时肯定要抽排1个小时，然后才能开始真正涂覆。漫长的等候时间直接影响到该方法的总持续时间，进而影响到这种层膜的制造成本。
因此值得期待的是：提供耗时明显更少的方法，而产品质量且尤其是层膜在基材上的附着没有变差。
本发明的任务基于这种期待。
本发明人在其研发工作中出乎意料地确定：可并行进行一些方法步骤，这些方法步骤涉及涂覆室内的基材预处理和靶修整。确切说，本发明人可以在涂覆室被排真空至所需程度后，启动靶修整并同时开始基材预处理。虽然两个处理过程一般需要在室内点燃的等离子体，但这两个处理过程未产生不利影响。还更不可思议的是，这并非仅适用于一个基材部位，而是整个高度范围内都适用，在涂覆室内多个基材一般在所述高度范围被安放在回转体上。与此相应，图2示出在基材预处理范围内与基材位置相关地被去除的层的厚度；确切说，一个是没有同时修整靶，一个是同时修整靶。基材去除量和回转体(Karusell)被测量。如图2所示，“是否同时修整靶”对等离子体蚀刻的效率和均匀性仅有微弱影响。
这样，根据本发明的工件涂覆方法可以包括以下步骤：
-在涂覆室内装入待涂覆工件，
-关闭涂覆室并将涂覆室抽真空至预定的工艺过程压力，
-启动涂覆源，该涂覆源包括靶作为材料源，来自靶面的颗粒由此被朝向基材加速，
其特征是，在靶表面和基材之间一直设置屏蔽，直到该靶被修整，在此期间内所述待涂覆的基材至少部分接受预处理。
基材预处理可以包括蚀刻法。
根据另一个实施方式，该预处理可以包括基材表面氮化，作为一个方法步骤。例如为此可在腔室中注入由氮气、氩气和氢气构成的气体混合物。
靶的修整例如可结束于当由颗粒发出的光学信号基本不再变化之时。该光学信号可借助OES测量来测得。
该方法尤其适用于涂覆源如磁控溅射源。
该涂覆室可以包括多个磁控溅射源，它们在彼此交叉的时间区间被依次周期性地连接至具有高功率输出的直流功率发生器，从而在时间上周期性地在靶表面上出现超过0.2A/cm2的电流密度。
但在本发明的方法中也可采用电弧蒸发源作为涂覆源。

Claims (4)

1.一种基材涂覆方法，其包括以下步骤：
-将待涂覆基材装入涂覆室，该涂覆室包括多个涂覆源，
-关闭该涂覆室并将该涂覆室抽真空至预定的工艺过程压力，
-启动作为磁控溅射源的所述多个涂覆源，其包括靶作为材料源，由此使得来自靶表面的微粒朝向基材被加速，
其特征是，
多个待涂覆基材在回转体上布置在不同的基材位置处，
这些涂覆源在彼此交叉的时间区间内依次周期性地被连接至具有高功率输出的直流功率发生器，从而在时间上周期性地在该靶表面上出现超过0.2A/cm2的电流密度，
在靶表面和这些基材之间一直设置屏蔽直到因该靶表面不再改变而使该靶得以修整为止，在此期间内待涂覆基材至少部分接受预处理，
其中，为了氮化而在腔室中注入气体混合物，该气体混合物包含元素氮、氩和氢，
其中，该预处理包括下列方法步骤，基材在所述方法步骤中被氮化。
2.根据权利要求1的方法，其特征是，该基材的预处理包括蚀刻法。
3.根据权利要求1或2所述的方法，其特征是，所述靶的修整结束于微粒发出的光学信号基本不再变化之时。
4.根据权利要求3的方法，其特征是，该光学信号借助OES测量来测得。
CN201480038031.4A 2013-07-03 2014-06-30 靶准备 Active CN105392912B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013011072.6A DE102013011072A1 (de) 2013-07-03 2013-07-03 Targetpräparation
DE102013011072.6 2013-07-03
PCT/EP2014/001783 WO2015000578A1 (de) 2013-07-03 2014-06-30 Targetpräparation

Publications (2)

Publication Number Publication Date
CN105392912A CN105392912A (zh) 2016-03-09
CN105392912B true CN105392912B (zh) 2019-01-11

Family

ID=51162686

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480038031.4A Active CN105392912B (zh) 2013-07-03 2014-06-30 靶准备

Country Status (16)

Country Link
US (1) US10053769B2 (zh)
EP (1) EP3017081B1 (zh)
JP (1) JP6441329B2 (zh)
KR (1) KR102233346B1 (zh)
CN (1) CN105392912B (zh)
BR (1) BR112015032167B1 (zh)
CA (1) CA2916773C (zh)
DE (1) DE102013011072A1 (zh)
HK (1) HK1219515A1 (zh)
IL (1) IL243139B (zh)
MX (1) MX2015017027A (zh)
MY (1) MY178779A (zh)
PH (1) PH12015502752A1 (zh)
RU (1) RU2016103225A (zh)
SG (1) SG11201510361YA (zh)
WO (1) WO2015000578A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018145812A1 (en) * 2017-02-13 2018-08-16 Oerlikon Surface Solutions Ag, Pfäffikon Insitu metal matrix nanocomposite synthesis by additive manufacturing route

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101035925A (zh) * 2004-09-08 2007-09-12 比克-维奥利克斯公司 在剃须刀片刀口和剃须刀片上沉积涂层的方法
US20110220490A1 (en) * 2010-03-15 2011-09-15 Southwest Research Institute Apparatus And Method Utilizing A Double Glow Discharge Plasma For Sputter Cleaning
CN102230154A (zh) * 2011-06-14 2011-11-02 上海巴耳思新材料科技有限公司 一种物理气相沉积涂层的工艺方法
EP2521159A1 (en) * 2011-05-06 2012-11-07 Pivot a.s. Glow discharge apparatus and method with lateral rotating arc cathodes

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3625848A (en) * 1968-12-26 1971-12-07 Alvin A Snaper Arc deposition process and apparatus
AU485283B2 (en) * 1971-05-18 1974-10-03 Warner-Lambert Company Method of making a razorblade
JPS54149338A (en) * 1978-05-15 1979-11-22 Anelva Corp Thin film forming method by sputtering
JPS6335774A (ja) * 1986-07-31 1988-02-16 Mitsubishi Heavy Ind Ltd 窒化ボロン皮膜のコ−テイング方法
JPH01225772A (ja) * 1988-03-04 1989-09-08 Nippon Telegr & Teleph Corp <Ntt> イオンビームスパッタ装置
JPH04236767A (ja) * 1991-01-16 1992-08-25 Toshiba Corp 薄膜形成装置
DE4125365C1 (zh) * 1991-07-31 1992-05-21 Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De
DE19609804C1 (de) * 1996-03-13 1997-07-31 Bosch Gmbh Robert Einrichtung, ihre Verwendung und ihr Betrieb zum Vakuumbeschichten von Schüttgut
US5945214C1 (en) * 1996-08-28 2002-04-23 Premark Rwp Holdings Inc Diboride coated pressing surfaces for abrasion resistant laminate and making pressing surfaces
JP2002501986A (ja) * 1998-01-30 2002-01-22 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 液晶ポリマーのめっき方法およびそれに関連する組成物
JP4403617B2 (ja) * 1999-12-08 2010-01-27 株式会社島津製作所 スパッタリング装置
JP4560964B2 (ja) * 2000-02-25 2010-10-13 住友電気工業株式会社 非晶質炭素被覆部材
JP4540830B2 (ja) * 2000-10-31 2010-09-08 キヤノンアネルバ株式会社 基板加熱機構付シャッタを有する成膜装置及び成膜方法
JP4436987B2 (ja) * 2001-02-22 2010-03-24 パナソニック株式会社 成膜方法及び装置
DE10312658A1 (de) * 2003-03-21 2004-09-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Beschichtung flexibler Substrate mit Aluminium
JP4541045B2 (ja) * 2004-06-24 2010-09-08 日立ツール株式会社 皮膜形成方法及びその皮膜形成方法を用いた被覆部材
US20060042930A1 (en) * 2004-08-26 2006-03-02 Daniele Mauri Method for reactive sputter deposition of a magnesium oxide (MgO) tunnel barrier in a magnetic tunnel junction
US7560038B2 (en) * 2004-09-22 2009-07-14 Sae Magnetics (H.K.) Ltd. Thin film forming method and system
JP2006206959A (ja) * 2005-01-27 2006-08-10 Plus:Kk アルミニウム合金の窒化方法
ATE537278T1 (de) * 2006-07-26 2011-12-15 Naco Technologies Sia Verfahren zur ionenplasmaapplikation von filmbeschichtungen und vorrichtung zur durchführung des verfahrens
DE102007058356A1 (de) * 2007-06-20 2008-12-24 Systec System- Und Anlagentechnik Gmbh & Co.Kg PVD-Verfahren und PVD-Vorrichtung zur Erzeugung von reibungsarmen, verschleißbeständigen Funktionsschichten und damit hergestellte Beschichtungen
JP5077251B2 (ja) * 2009-01-20 2012-11-21 コニカミノルタアドバンストレイヤー株式会社 金型、金型の製造方法、ガラスゴブの製造方法及びガラス成形体の製造方法
JP2011032508A (ja) * 2009-07-30 2011-02-17 Tohoku Univ 配線基板プラズマ処理装置及び配線基板の製造方法
JP5720996B2 (ja) * 2010-03-29 2015-05-20 日立金属株式会社 皮膜密着性に優れた被覆部材およびその製造方法
DE102011117177A1 (de) * 2011-10-28 2013-05-02 Oerlikon Trading Ag, Trübbach Verfahren zur Bereitstellung sequenzieller Leistungspulse
DE102011018363A1 (de) * 2011-04-20 2012-10-25 Oerlikon Trading Ag, Trübbach Hochleistungszerstäubungsquelle

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101035925A (zh) * 2004-09-08 2007-09-12 比克-维奥利克斯公司 在剃须刀片刀口和剃须刀片上沉积涂层的方法
US20110220490A1 (en) * 2010-03-15 2011-09-15 Southwest Research Institute Apparatus And Method Utilizing A Double Glow Discharge Plasma For Sputter Cleaning
EP2521159A1 (en) * 2011-05-06 2012-11-07 Pivot a.s. Glow discharge apparatus and method with lateral rotating arc cathodes
CN102230154A (zh) * 2011-06-14 2011-11-02 上海巴耳思新材料科技有限公司 一种物理气相沉积涂层的工艺方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Hydrogenaed amorphous silicon deposited by high pressure sputtering for HIT solar cells";R.Garcia-Hernansanz，et al.;《2013 Spanish Conference on Electron Devices》;20130214;第338页 *

Also Published As

Publication number Publication date
DE102013011072A1 (de) 2015-01-08
MX2015017027A (es) 2016-10-26
MY178779A (en) 2020-10-20
EP3017081A1 (de) 2016-05-11
WO2015000578A1 (de) 2015-01-08
RU2016103225A (ru) 2017-08-08
US20160186310A1 (en) 2016-06-30
BR112015032167A2 (pt) 2017-07-25
CA2916773C (en) 2021-06-01
KR102233346B1 (ko) 2021-03-30
KR20160029814A (ko) 2016-03-15
HK1219515A1 (zh) 2017-04-07
CA2916773A1 (en) 2015-01-08
US10053769B2 (en) 2018-08-21
JP2016526605A (ja) 2016-09-05
SG11201510361YA (en) 2016-01-28
EP3017081B1 (de) 2020-01-08
CN105392912A (zh) 2016-03-09
IL243139B (en) 2019-11-28
PH12015502752A1 (en) 2016-03-14
JP6441329B2 (ja) 2018-12-19
BR112015032167B1 (pt) 2022-02-01

Similar Documents

Publication Publication Date Title
KR20070091000A (ko) 반도체 처리 장치용의 구성 부재 및 그 제조 방법, 및반도체 처리 장치
CN105392912B (zh) 靶准备
WO2013099570A1 (ja) 貴金属膜の連続成膜方法及び電子部品の連続製造方法
US20120263941A1 (en) Coated article and method for making the same
RU118311U1 (ru) Магнетронная установка по производству ленты с катодным покрытием для литий-ионных источников тока
KR20160045667A (ko) 스퍼터링 성막 장치 및 스퍼터링 성막 방법
CN102345103A (zh) 镁锂合金表面钛改性层的制备方法
KR101338675B1 (ko) 광학적 코팅층의 형성방법
US20120171516A1 (en) Coated article and method for manufacturing coated article
JP5736317B2 (ja) コーティング設備のための洗浄方法
CN105274482B (zh) 阴极组件、物理汽相沉积系统和用于物理汽相沉积的方法
KR101356166B1 (ko) Ｐｖｄ 코팅장비의 오염도 측정방법
JP4766821B2 (ja) 基板にコーティングを施すための真空モジュール（及びその変形）とモジュールシステム
KR20110117528A (ko) 알루미늄 박막 코팅 방법
US8492674B2 (en) Methods and apparatus for ex situ seasoning of electronic device manufacturing process components
US20100155935A1 (en) Protective coating for semiconductor substrates
KR100384449B1 (ko) 밀착력 및 증착효율이 향상된 알루미늄 피막의 제조방법
WO2006064414A1 (en) Thin film acoustic reflector stack
JP2003034857A (ja) スパッタリング装置及び方法
KR100362529B1 (ko) 후막 코팅방법
JP5324144B2 (ja) プラズマ処理方法及び処理装置
Grünwald et al. Integration of plasma pre-treatment, metallization, and plasma polymerization for improved aluminium mirror quality in large-scale car lighting production
RU81730U1 (ru) Установка для нанесения покрытий
JP2008266682A (ja) 酸化マグネシウム膜の成膜方法
JP2008108953A (ja) 半導体基板裏面異物除去方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1219515

Country of ref document: HK

CB02 Change of applicant information
CB02 Change of applicant information

Address after: 120, Kurdish street, Cape Town, Switzerland

Applicant after: OERLIKON SURFACE SOLUTIONS AG TRUBBACH

Address before: The Swiss city of Telubahe

Applicant before: OERLIKON TRADING AG

GR01 Patent grant
GR01 Patent grant