CN105390378B - 半导体器件的制造方法及衬底处理装置 - Google Patents

半导体器件的制造方法及衬底处理装置 Download PDF

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CN105390378B
CN105390378B CN201510416824.1A CN201510416824A CN105390378B CN 105390378 B CN105390378 B CN 105390378B CN 201510416824 A CN201510416824 A CN 201510416824A CN 105390378 B CN105390378 B CN 105390378B
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gas
processing chamber
processing
substrate
supplying
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CN105390378A (zh
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山本隆治
镰仓司
广濑义朗
岛本聪
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INTERNATIONAL ELECTRIC CO Ltd
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Hitachi Kokusai Electric Inc
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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