KR101751599B1 - 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 - Google Patents

반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 Download PDF

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KR101751599B1
KR101751599B1 KR1020150123774A KR20150123774A KR101751599B1 KR 101751599 B1 KR101751599 B1 KR 101751599B1 KR 1020150123774 A KR1020150123774 A KR 1020150123774A KR 20150123774 A KR20150123774 A KR 20150123774A KR 101751599 B1 KR101751599 B1 KR 101751599B1
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gas
substrate
chamber
processing chamber
supplying
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KR20160027934A (ko
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류지 야마모토
츠카사 가마쿠라
요시로 히로세
사토시 시마모토
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가부시키가이샤 히다치 고쿠사이 덴키
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    • H01L21/02334—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
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    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200107834A (ko) * 2019-03-06 2020-09-16 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
WO2017163314A1 (ja) * 2016-03-22 2017-09-28 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
US10679830B2 (en) * 2016-06-20 2020-06-09 Applied Materials, Inc. Cleaning process for removing boron-carbon residuals in processing chamber at high temperature
JP6368743B2 (ja) 2016-06-22 2018-08-01 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびプログラム
JP6719993B2 (ja) * 2016-06-30 2020-07-08 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
WO2018084214A1 (ja) * 2016-11-02 2018-05-11 株式会社アルバック 真空処理装置
JP6814057B2 (ja) * 2017-01-27 2021-01-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
WO2019058477A1 (ja) * 2017-09-21 2019-03-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6967922B2 (ja) * 2017-09-22 2021-11-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN111448640B (zh) 2017-12-07 2025-04-15 朗姆研究公司 在室调节中的抗氧化保护层
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
JP6828674B2 (ja) * 2017-12-20 2021-02-10 株式会社Sumco クリーニング方法、シリコン単結晶の製造方法、および、クリーニング装置
JP7045196B2 (ja) * 2018-01-15 2022-03-31 東京応化工業株式会社 基板処理装置及び基板処理方法
JP6960344B2 (ja) 2018-01-26 2021-11-05 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
CN110300495A (zh) * 2018-03-23 2019-10-01 睿明科技股份有限公司 基板镀膜方法
KR102471028B1 (ko) 2018-04-27 2022-11-28 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치 및 프로그램
CN112771201A (zh) * 2018-10-02 2021-05-07 瑞士艾发科技 等离子体增强原子层沉积(peald)设备
JP7256263B2 (ja) * 2018-10-05 2023-04-11 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ケイ素含有膜の高温原子層堆積
WO2020081303A1 (en) 2018-10-19 2020-04-23 Lam Research Corporation In situ protective coating of chamber components for semiconductor processing
JP6960953B2 (ja) * 2019-03-20 2021-11-05 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
JP7275927B2 (ja) * 2019-06-28 2023-05-18 日新電機株式会社 スパッタ装置の使用方法
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JP7270863B1 (ja) 2019-11-29 2023-05-10 東京エレクトロン株式会社 プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置
US11566324B2 (en) 2020-02-27 2023-01-31 Applied Materials, Inc. Conditioning treatment for ALD productivity
WO2021193164A1 (ja) * 2020-03-26 2021-09-30 東京エレクトロン株式会社 炭化ケイ素含有膜を形成する方法及び装置
CN112071801B (zh) * 2020-09-16 2024-05-17 北京北方华创微电子装备有限公司 顶针升降装置和半导体工艺腔室
JP7524333B2 (ja) * 2020-09-16 2024-07-29 株式会社Kokusai Electric 半導体装置の製造方法、プログラム、基板処理装置及び基板処理方法
JP7303168B2 (ja) 2020-09-30 2023-07-04 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
CN114293174A (zh) * 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
JP7504004B2 (ja) * 2020-11-13 2024-06-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7260578B2 (ja) * 2021-03-19 2023-04-18 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、および、プログラム
US12012653B2 (en) * 2021-03-23 2024-06-18 Applied Materials, Inc. Cleaning assemblies for substrate processing chambers
JP7273086B2 (ja) 2021-03-24 2023-05-12 株式会社Kokusai Electric 半導体装置の製造方法、プログラム及び基板処理装置
JP7664085B2 (ja) * 2021-05-28 2025-04-17 東京エレクトロン株式会社 エッチング方法およびエッチング装置
TWI764784B (zh) * 2021-07-16 2022-05-11 天虹科技股份有限公司 雙層式遮蔽構件及具有雙層式遮蔽構件的薄膜沉積機台
KR102745453B1 (ko) * 2021-12-23 2024-12-23 주식회사 원익아이피에스 기판 처리 방법 및 기판 처리 장치
TWI850909B (zh) * 2022-03-18 2024-08-01 日商國際電氣股份有限公司 氣體清潔方法、半導體裝置之製造方法、基板處理方法、程式及基板處理裝置
JP7461396B2 (ja) * 2022-03-24 2024-04-03 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001093877A (ja) * 1999-09-22 2001-04-06 Texas Instr Japan Ltd 半導体装置の製造方法
JP2008140864A (ja) * 2006-11-30 2008-06-19 Tokyo Electron Ltd シリコン窒化膜の形成方法、形成装置、形成装置の処理方法及びプログラム
JP2013089682A (ja) * 2011-10-14 2013-05-13 Shin Etsu Handotai Co Ltd エピタキシャルウエーハの製造方法
JP2014127524A (ja) * 2012-12-25 2014-07-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0383893A (ja) * 1989-08-25 1991-04-09 Sumitomo Metal Ind Ltd 気相成長装置
JP3247270B2 (ja) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
EP0975821B1 (de) * 1998-02-18 2001-10-17 AIXTRON Aktiengesellschaft Cvd-reaktor und dessen verwendung
JP3804913B2 (ja) * 2000-09-19 2006-08-02 株式会社日立国際電気 半導体装置の製造方法および半導体装置の製造装置
JP2002100570A (ja) * 2000-09-22 2002-04-05 Komatsu Electronic Metals Co Ltd 枚葉式気相成長装置
US20050145177A1 (en) * 2003-12-30 2005-07-07 Mcswiney Michael Method and apparatus for low temperature silicon nitride deposition
JP3147868U (ja) * 2008-11-06 2009-01-22 日本エー・エス・エム株式会社 基板処理装置
TWI558843B (zh) * 2009-02-04 2016-11-21 應用材料股份有限公司 用於電漿製程的接地回流路徑
US8329599B2 (en) 2011-02-18 2012-12-11 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
JP5933375B2 (ja) * 2011-09-14 2016-06-08 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001093877A (ja) * 1999-09-22 2001-04-06 Texas Instr Japan Ltd 半導体装置の製造方法
JP2008140864A (ja) * 2006-11-30 2008-06-19 Tokyo Electron Ltd シリコン窒化膜の形成方法、形成装置、形成装置の処理方法及びプログラム
JP2013089682A (ja) * 2011-10-14 2013-05-13 Shin Etsu Handotai Co Ltd エピタキシャルウエーハの製造方法
JP2014127524A (ja) * 2012-12-25 2014-07-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200107834A (ko) * 2019-03-06 2020-09-16 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
KR102361934B1 (ko) * 2019-03-06 2022-02-11 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
US11600488B2 (en) 2019-03-06 2023-03-07 Kokusai Electric Corporation Method of manufacturing semiconductor device

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