CN105308732B - 包括通过平面化减少焊接垫拓扑差异的制造电子结构的方法和对应的电子结构 - Google Patents
包括通过平面化减少焊接垫拓扑差异的制造电子结构的方法和对应的电子结构 Download PDFInfo
- Publication number
- CN105308732B CN105308732B CN201480036296.0A CN201480036296A CN105308732B CN 105308732 B CN105308732 B CN 105308732B CN 201480036296 A CN201480036296 A CN 201480036296A CN 105308732 B CN105308732 B CN 105308732B
- Authority
- CN
- China
- Prior art keywords
- metal layer
- welded gasket
- solder
- layer part
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01215—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps forming coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
- H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
- H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01251—Changing the shapes of bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01251—Changing the shapes of bumps
- H10W72/01255—Changing the shapes of bumps by using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
- H10W72/01938—Manufacture or treatment of bond pads using blanket deposition in gaseous form, e.g. by CVD or PVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01951—Changing the shapes of bond pads
- H10W72/01953—Changing the shapes of bond pads by etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07232—Compression bonding, e.g. thermocompression bonding
- H10W72/07233—Ultrasonic bonding, e.g. thermosonic bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07236—Soldering or alloying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/221—Structures or relative sizes
- H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
- H10W72/223—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core characterised by the structure of the outermost layers, e.g. multilayered coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/221—Structures or relative sizes
- H10W72/227—Multiple bumps having different sizes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/231—Shapes
- H10W72/234—Cross-sectional shape, i.e. in side view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/231—Shapes
- H10W72/237—Multiple bump connectors having different shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/245—Dispositions, e.g. layouts of outermost layers of multilayered bumps, e.g. bump coating being only on a part of a bump core
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/247—Dispositions of multiple bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/255—Materials of outermost layers of multilayered bumps, e.g. material of a coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/926—Multiple bond pads having different sizes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/944—Dispositions of multiple bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Wire Bonding (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361838457P | 2013-06-24 | 2013-06-24 | |
| US61/838457 | 2013-06-24 | ||
| PCT/IB2014/061968 WO2014207590A2 (en) | 2013-06-24 | 2014-06-05 | Reducing solder pad topology differences by planarization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105308732A CN105308732A (zh) | 2016-02-03 |
| CN105308732B true CN105308732B (zh) | 2018-11-27 |
Family
ID=51022931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480036296.0A Active CN105308732B (zh) | 2013-06-24 | 2014-06-05 | 包括通过平面化减少焊接垫拓扑差异的制造电子结构的方法和对应的电子结构 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9935069B2 (enExample) |
| EP (1) | EP3014653B1 (enExample) |
| JP (1) | JP6762871B2 (enExample) |
| KR (1) | KR102257933B1 (enExample) |
| CN (1) | CN105308732B (enExample) |
| TW (2) | TW201816905A (enExample) |
| WO (1) | WO2014207590A2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3671861A1 (en) * | 2018-12-17 | 2020-06-24 | Nexperia B.V. | Semiconductor device and electrical contact |
| US12622284B2 (en) | 2023-02-21 | 2026-05-05 | International Business Machines Corporation | Solder volume for flip-chip bonding |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3244001B2 (ja) * | 1996-07-08 | 2002-01-07 | 松下電器産業株式会社 | ワークの実装方法 |
| US20020052065A1 (en) * | 2000-10-26 | 2002-05-02 | Ken Ogura | Conductor posts, construction for and method of fabricating semiconductor integrated circuit chips using the conductor post, and method of probing semiconductor integrated circuit chips |
| US20050227474A1 (en) * | 2004-03-31 | 2005-10-13 | Fujitsu Limited | Method of connecting base materials |
| JP2005303181A (ja) * | 2004-04-15 | 2005-10-27 | Matsushita Electric Ind Co Ltd | バンプ形成装置およびバンプ形成方法 |
| CN102931111A (zh) * | 2012-11-08 | 2013-02-13 | 南通富士通微电子股份有限公司 | 半导体封装结构的形成方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56142656A (en) * | 1980-04-09 | 1981-11-07 | Fujitsu Ltd | Semiconductor device |
| JP3171477B2 (ja) * | 1992-02-26 | 2001-05-28 | 株式会社東芝 | 半導体装置 |
| US5465152A (en) * | 1994-06-03 | 1995-11-07 | Robotic Vision Systems, Inc. | Method for coplanarity inspection of package or substrate warpage for ball grid arrays, column arrays, and similar structures |
| US6042953A (en) * | 1996-03-21 | 2000-03-28 | Matsushita Electric Industrial Co., Ltd. | Substrate on which bumps are formed and method of forming the same |
| JPH09312295A (ja) * | 1996-03-21 | 1997-12-02 | Matsushita Electric Ind Co Ltd | バンプ形成体及びバンプの形成方法 |
| JPH1013007A (ja) | 1996-03-29 | 1998-01-16 | Ngk Spark Plug Co Ltd | 半田バンプを有する配線基板及びその製造方法及び平坦化治具 |
| US6652764B1 (en) | 2000-08-31 | 2003-11-25 | Micron Technology, Inc. | Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
| TWI244129B (en) | 2002-10-25 | 2005-11-21 | Via Tech Inc | Bonding column process |
| US7008867B2 (en) * | 2003-02-21 | 2006-03-07 | Aptos Corporation | Method for forming copper bump antioxidation surface |
| JP2006066689A (ja) * | 2004-08-27 | 2006-03-09 | Optrex Corp | 半導体素子及びバンプ電極の平坦化方法 |
| TWI317154B (en) * | 2006-07-03 | 2009-11-11 | Phoenix Prec Technology Corp | Circuit board structure having conductive bumps and method for fabricating conductive bumps on the circuit board structure |
| KR101079946B1 (ko) * | 2006-11-28 | 2011-11-04 | 파나소닉 주식회사 | 전자 부품 실장 구조체와 그 제조 방법 |
| US20080217183A1 (en) * | 2007-03-09 | 2008-09-11 | Sriram Muthukumar | Electropolishing metal features on a semiconductor wafer |
| US7800239B2 (en) * | 2007-12-14 | 2010-09-21 | Semiconductor Components Industries, Llc | Thick metal interconnect with metal pad caps at selective sites and process for making the same |
| JP2010003793A (ja) * | 2008-06-19 | 2010-01-07 | Fujitsu Ltd | 配線基板、ポスト電極の転写用基板及び電子機器 |
| KR101485105B1 (ko) * | 2008-07-15 | 2015-01-23 | 삼성전자주식회사 | 반도체 패키지 |
| TWI411075B (zh) * | 2010-03-22 | 2013-10-01 | 日月光半導體製造股份有限公司 | 半導體封裝件及其製造方法 |
| CN101958389A (zh) * | 2010-07-30 | 2011-01-26 | 晶科电子(广州)有限公司 | 一种硅基板集成有功能电路的led表面贴装结构及其封装方法 |
| US8536701B2 (en) * | 2011-05-03 | 2013-09-17 | Industrial Technology Research Institute | Electronic device packaging structure |
-
2014
- 2014-06-05 WO PCT/IB2014/061968 patent/WO2014207590A2/en not_active Ceased
- 2014-06-05 CN CN201480036296.0A patent/CN105308732B/zh active Active
- 2014-06-05 EP EP14733717.4A patent/EP3014653B1/en active Active
- 2014-06-05 KR KR1020167001992A patent/KR102257933B1/ko active Active
- 2014-06-05 JP JP2016520772A patent/JP6762871B2/ja active Active
- 2014-06-05 US US14/392,345 patent/US9935069B2/en active Active
- 2014-06-24 TW TW107101209A patent/TW201816905A/zh unknown
- 2014-06-24 TW TW103121674A patent/TWI622108B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3244001B2 (ja) * | 1996-07-08 | 2002-01-07 | 松下電器産業株式会社 | ワークの実装方法 |
| US20020052065A1 (en) * | 2000-10-26 | 2002-05-02 | Ken Ogura | Conductor posts, construction for and method of fabricating semiconductor integrated circuit chips using the conductor post, and method of probing semiconductor integrated circuit chips |
| US20050227474A1 (en) * | 2004-03-31 | 2005-10-13 | Fujitsu Limited | Method of connecting base materials |
| JP2005303181A (ja) * | 2004-04-15 | 2005-10-27 | Matsushita Electric Ind Co Ltd | バンプ形成装置およびバンプ形成方法 |
| CN102931111A (zh) * | 2012-11-08 | 2013-02-13 | 南通富士通微电子股份有限公司 | 半导体封装结构的形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102257933B1 (ko) | 2021-05-31 |
| US9935069B2 (en) | 2018-04-03 |
| JP2016529693A (ja) | 2016-09-23 |
| WO2014207590A3 (en) | 2015-05-07 |
| US20160181216A1 (en) | 2016-06-23 |
| WO2014207590A2 (en) | 2014-12-31 |
| TWI622108B (zh) | 2018-04-21 |
| TW201816905A (zh) | 2018-05-01 |
| JP6762871B2 (ja) | 2020-09-30 |
| KR20160022917A (ko) | 2016-03-02 |
| EP3014653A2 (en) | 2016-05-04 |
| TW201503271A (zh) | 2015-01-16 |
| CN105308732A (zh) | 2016-02-03 |
| EP3014653B1 (en) | 2019-09-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4551321B2 (ja) | 電子部品実装構造及びその製造方法 | |
| JP3945483B2 (ja) | 半導体装置の製造方法 | |
| JP2004343030A (ja) | 配線回路基板とその製造方法とその配線回路基板を備えた回路モジュール | |
| US20130119012A1 (en) | Interconnection element for electric circuits | |
| JP5237242B2 (ja) | 配線回路構造体およびそれを用いた半導体装置の製造方法 | |
| JP6770853B2 (ja) | リードフレーム及び電子部品装置とそれらの製造方法 | |
| US6420787B1 (en) | Semiconductor device and process of producing same | |
| KR101538541B1 (ko) | 반도체 디바이스 | |
| JP2010272562A (ja) | 電子部品の実装構造 | |
| JP2018037504A5 (enExample) | ||
| JP2009246337A (ja) | 半導体装置及びその製造方法 | |
| TWI452659B (zh) | 電路板及其製作方法與封裝結構 | |
| WO1999004424A1 (fr) | Dispositif a semi-conducteur, et structure de montage et procede de fabrication associes | |
| TWI393513B (zh) | 內埋式線路板及其製作方法 | |
| JP2000269269A (ja) | 半導体実装用基板と半導体装置および半導体装置の製造方法 | |
| JP3788343B2 (ja) | 半導体装置とその製造方法 | |
| TWI622108B (zh) | 藉由平坦化減少焊墊拓撲差異 | |
| US20110254152A1 (en) | Chip structure, chip bonding structure using the same, and manufacturing method thereof | |
| JP2002231765A (ja) | 半導体装置 | |
| KR101574019B1 (ko) | 인쇄회로기판의 제조 방법 | |
| JP2002134541A (ja) | 半導体装置とその製造方法ならびに半導体装置の実装構造 | |
| CN101894766A (zh) | 焊料凸块制作方法 | |
| JP2012079956A (ja) | 半導体装置及び半導体装置の製造方法 | |
| JP4110421B2 (ja) | 半導体装置の製造方法 | |
| CN101038441B (zh) | 凸块制程 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20180426 Address after: Holland Schiphol Applicant after: LUMILEDS HOLDING B.V. Address before: Holland Ian Deho Finn Applicant before: Koninkl Philips Electronics NV |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |