CN105308218B - 锡或锡合金用电镀液及其用途 - Google Patents
锡或锡合金用电镀液及其用途 Download PDFInfo
- Publication number
- CN105308218B CN105308218B CN201480033173.1A CN201480033173A CN105308218B CN 105308218 B CN105308218 B CN 105308218B CN 201480033173 A CN201480033173 A CN 201480033173A CN 105308218 B CN105308218 B CN 105308218B
- Authority
- CN
- China
- Prior art keywords
- tin
- plating
- ingredient
- hole
- blind hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 239000007788 liquid Substances 0.000 title claims abstract description 38
- 229910001128 Sn alloy Inorganic materials 0.000 title claims abstract description 30
- 238000007747 plating Methods 0.000 claims abstract description 79
- 238000011049 filling Methods 0.000 claims abstract description 33
- 239000004615 ingredient Substances 0.000 claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims abstract description 18
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 13
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000001211 (E)-4-phenylbut-3-en-2-one Substances 0.000 claims description 4
- FPYUJUBAXZAQNL-UHFFFAOYSA-N 2-chlorobenzaldehyde Chemical compound ClC1=CC=CC=C1C=O FPYUJUBAXZAQNL-UHFFFAOYSA-N 0.000 claims description 4
- 229930008407 benzylideneacetone Natural products 0.000 claims description 4
- 150000004002 naphthaldehydes Chemical class 0.000 claims description 4
- BWHOZHOGCMHOBV-BQYQJAHWSA-N trans-benzylideneacetone Chemical compound CC(=O)\C=C\C1=CC=CC=C1 BWHOZHOGCMHOBV-BQYQJAHWSA-N 0.000 claims description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 21
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 16
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 14
- -1 chloronaphthalene aldehyde Chemical class 0.000 description 9
- 239000002253 acid Substances 0.000 description 8
- 229940098779 methanesulfonic acid Drugs 0.000 description 8
- 150000004003 1-naphthaldehydes Chemical class 0.000 description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 6
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000002203 pretreatment Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000012858 packaging process Methods 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- QSLPNSWXUQHVLP-UHFFFAOYSA-N $l^{1}-sulfanylmethane Chemical compound [S]C QSLPNSWXUQHVLP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- LLABTCPIBSAMGS-UHFFFAOYSA-L lead(2+);methanesulfonate Chemical compound [Pb+2].CS([O-])(=O)=O.CS([O-])(=O)=O LLABTCPIBSAMGS-UHFFFAOYSA-L 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 description 1
- VZYDKJOUEPFKMW-UHFFFAOYSA-N 2,3-dihydroxybenzenesulfonic acid Chemical compound OC1=CC=CC(S(O)(=O)=O)=C1O VZYDKJOUEPFKMW-UHFFFAOYSA-N 0.000 description 1
- WROUWQQRXUBECT-UHFFFAOYSA-N 2-ethylacrylic acid Chemical compound CCC(=C)C(O)=O WROUWQQRXUBECT-UHFFFAOYSA-N 0.000 description 1
- SKJCWIFHLDWPEO-UHFFFAOYSA-N 3-benzyl-4-phenylbutan-2-one Chemical class C=1C=CC=CC=1CC(C(=O)C)CC1=CC=CC=C1 SKJCWIFHLDWPEO-UHFFFAOYSA-N 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 229910002065 alloy metal Inorganic materials 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 229910001451 bismuth ion Inorganic materials 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910001449 indium ion Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229940054441 o-phthalaldehyde Drugs 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 229940044654 phenolsulfonic acid Drugs 0.000 description 1
- ZWLUXSQADUDCSB-UHFFFAOYSA-N phthalaldehyde Chemical compound O=CC1=CC=CC=C1C=O ZWLUXSQADUDCSB-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- MWOOGOJBHIARFG-UHFFFAOYSA-N vanillin Chemical compound COC1=CC(C=O)=CC=C1O MWOOGOJBHIARFG-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
- C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
- C25D5/56—Electroplating of non-metallic surfaces of plastics
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/187—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating means therefor, e.g. baths, apparatus
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/421—Blind plated via connections
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
本发明的课题在于解决以过去所使用锡或锡合金镀敷用镀敷液试图填充盲孔或通孔时,填充本身无法良好地进行,或者即使填充本身能够良好地进行,也有填充时间极长的问题。解决该课题的锡或锡合金用电镀液的特征在于含有以下的成分(a)及(b):(a)含羧基的化合物,(b)含羰基的化合物,且成分(a)为1.3g/L以上,以及成分(b)为0.3g/L以上。
Description
技术领域
本发明涉及锡或锡合金用电镀液及使用其的盲孔或通孔的填充方法,以及电子电路基板的制造方法。
背景技术
至今为止,半导体的立体封装或印刷配线板的盲孔或通孔的填充工序中使用镀铜,封装工序中使用焊球或锡合金。
然而,以往的工序中在填充工序及封装工序中使用不同金属种类,因而有工序复杂的问题。
因此,若在盲孔或通孔的填充工序中,能够与封装工序同样地可使用锡或锡合金,则有能够省略封装工序的可能性。实际上也有报告在盲孔或通孔的填充工序中实施锡或锡合金的技术(专利文献1)。
现有技术文献
专利文献
专利文献1:日本特开2012-87393公报
发明内容
发明所要解决的课题
然而,以以往所报告的锡或锡合金镀敷用镀敷液填充盲孔或通孔时,填充本身无法良好地进行,或者即使填充本身可良好地进行,也有填充时间极长的问题。
用于解决课题的手段
本发明人等为了解决上述课题深入研究的结果,发现通过在以往公知的锡或锡合金镀敷用镀敷液中以特定浓度含有特定化合物,可在短时间以高可靠性填充盲孔或通孔,而完成本发明。
即,本发明的锡或锡合金用电镀液的特征在于,含有以下的成分(a)及(b):
(a)含羧基的化合物,
(b)含羰基的化合物,
且成分(a)为1.3g/L以上,以及成分(b)为0.3g/L以上。
另外,本发明的盲孔或通孔的镀敷填充方法的特征在于,对具有盲孔或通孔的被镀敷物以上述锡或锡合金用电镀液进行电镀。
进而,本发明的电子电路基板的制造方法的特征在于,在对具有盲孔或通孔的基板进行包括镀敷填充工序的电子电路基板的制造方法中,以上述盲孔或通孔的镀敷填充方法进行镀敷填充。
发明效果
本发明的锡或锡合金用电镀液,通过对具有盲孔或通孔的被镀敷物进行电镀,可在短时间以高可靠性填充盲孔或通孔。
另外,本发明的锡或锡合金用电镀液是可利用于半导体的立体封装、印刷配线板的盲孔或通孔的填充工序或硅贯通电极的形成。
附图说明
图1是实施例2的电镀后基板的剖面照片(图中(a)是使用比较品1的电镀液以0.075A/dm2进行电镀15分钟的样品,(b)是使用实施品1的电镀液以0.075A/dm2进行电镀20分钟的样品)。
图2是实施例3的电镀后基板的剖面照片(图中(a)~(d)是使用比较品2的电镀液,以0.05A/dm2进行电镀15分钟后、30分钟后、60分钟后、90分钟后的样品)。
图3是实施例3的电镀后基板的剖面照片(图中(a)~(e)是使用实施品1的电镀液,以0.05A/dm2进行电镀15分钟后、30分钟后、60分钟后、90分钟后、120分钟后的样品)。
图4是实施例6的电镀后基板的剖面照片(图中(a)~(c)是使用实施品2的电镀液,以1.5A/dm2进行电镀15分钟后、25分钟及35分钟后的样品)。
具体实施方式
在本发明的锡或锡合金用电镀液(以下称为「本发明的电镀液」)所含有的成分(a)含羧基的化合物只要是具有羧基的化合物,则无特别限定,可列举例如甲基丙烯酸、丙烯酸、巴豆酸、丙烯-1,2-二羧酸、乙基丙烯酸、丙烯酸甲酯、甲基丙烯酸甲酯等、这些之中优选甲基丙烯酸、丙烯酸。另外,这些含羧基的化合物可使用1种或2种。
本发明的镀敷液的成分(a)含羧基的化合物的含量为1.3g/L以上,优选为1.3~2.5g/L。
本发明的镀敷液所含有的成分(b)含羰基的化合物只要是具有羰基的化合物,则无特别限定,例如可列举亚苄基丙酮、萘醛、氯苯甲醛、邻苯二甲醛、水杨醛、氯萘醛、甲氧基苯甲醛、香草醛等,这些之中优选亚苄基丙酮、萘醛、氯苯甲醛。另外,这些含羰基的化合物可使用1种或2种。另外,在本发明的镀敷液包含含羰基的化合物时,也优选包含例如甲醇、异丙醇等溶剂。
本发明的镀敷液的成分(b)含羰基的化合物的含量为0.3g/L以上,优选为0.3~1.0g/L。
另外,本发明的镀敷液中,成分(a)与成分(b)的摩尔比无特别限定,优选为10以下,更优选为2~9。
作为成为本发明的镀敷液的基底的以往公知的锡或锡合金用电镀液,无特别限定,例如作为锡离子与合金用金属离子,可列举例如银离子、金离子、铜离子、铅离子、锑离子、铟离子、铋离子等,或作为将浴调整为酸性而使之稳定化的酸,可列举例如包含硫酸、甲磺酸、氟硼酸、苯酚磺酸、氨基磺酸、焦磷酸等。作为更具体的锡或锡合金用电镀浴,可列举硫酸浴、甲磺酸浴、硼氟化物浴等。这些之中优选硫酸浴、甲磺酸浴。
另外,在本发明的镀敷液中还可将公知的非离子系、阳离子系、阴离子系表面活性剂、邻苯二酚、间苯二酚、邻苯二酚磺酸等抗氧化剂等添加至以往公知的锡或锡合金用电镀液。
以下记载本发明的镀敷液的优选实施方式。
<锡用电镀液>
甲磺酸亚锡(作为锡):25~150g/L,优选为70~125g/L
甲磺酸:10~180g/L,优选为15~120g/L
聚氧乙烯月桂胺:0.1~8g/L,优选为3~6g/L
邻苯二酚:0.1~5g/L,优选为0.5~2g/L
甲基丙烯酸:0.2~4g/L,优选为1.3~2.5g/L
1-萘醛:0.05~1.5g/L,优选为0.3~1.0g/L
甲醇:0.7~25g/L,优选为3.5~17g/L
<锡合金用电镀液>
甲磺酸亚锡(作为锡):25~150g/L,优选为70~125g/L
甲磺酸铅(作为铅):0.1~50g/L,优选为1~30g/L
甲磺酸:10~180g/L,优选为15~120g/L
聚氧乙烯月桂胺:0.1~8g/L,优选为3~6g/L
邻苯二酚:0.1~5g/L,优选为0.5~2g/L
甲基丙烯酸:0.2~4g/L,优选为1.3~2.5g/L
1-萘醛:0.05~1.5g/L,优选为0.3~1.0g/L
甲醇:0.7~25g/L,优选为3.5~17g/L
本发明的镀敷液可以以往公知的方法对被镀敷物进行电镀。使用本发明的镀敷液的电镀方法无特别限定,可列举例如对被镀敷物进行碱性脱脂、亲水化处理、酸活性等前处理后,将其浸渍于本发明的镀敷液的方法等。
使用本发明的镀敷液的电镀条件无特别限定,使用通常的锡或锡合金的电镀条件即可,例如以浴温10~40℃,将锡用于阳极,以阴极电流密度0.2~3A/dm2进行即可。另外,电镀时优选以桨等搅拌。
能够以本发明的镀敷液进行电镀的被镀敷物无特别限定,可列举例如表面为由铜、镍、黄铜等金属、ABS、聚酰亚胺、环氧树脂等树脂等所形成的被镀敷物等。
另外,本发明的镀敷液也可以对如上述通常的被镀敷物进行电镀,特别是优选用于对具有盲孔或通孔的被镀敷物进行电镀,将盲孔或通孔用锡或锡合金填充。
将本发明的镀敷液用于盲孔填充时,将本发明的镀敷液的成分(a)与(b)的摩尔比设为10以下,优选为2~9。另外,将本发明的镀敷液使用于通孔填充时,本发明的镀敷液的成分(a)与(b)的摩尔比设为10以下,优选为3.5~10。
使用本发明的镀敷液将盲孔或通孔用锡或锡合金填充时,电镀条件无特别限定,例如以浴温10~40℃,将锡用于阳极,以阴极电流密度0.01~2.5A/dm2进行即可。另外,为了缩短镀敷时间,将电镀中的电流密度设为比电镀开始时相对更高即可。将电镀中的电流密度设为比电镀开始时相对更高的方法无特别限定,可列举例如将电镀中的电流密度从开始电镀时至经过规定时间后阶段性提高的方法,将电镀中的电流密度从开始电镀时呈线性地提高的方法等。
如上所述,可将盲孔或通孔用锡或锡合金填充的本发明的镀敷液包括对具有盲孔或通孔的基板进行镀敷填充的工序,例如可利用于半导体的立体封装、印刷配线板的盲孔或通孔的填充工序、或硅贯通电极的形成等电子电路基板的制造方法。
实施例
以下列举实施例详细地说明本发明,但本发明并不限定于这些实施例。
实施例1
锡用电镀液的制备:
通过混合成分1~5、7后,再混合成分6,从而制备下述组成的锡用电镀液。
表1
单位全部为g/L
成分 | 比较品1 | 实施品1 | 比较品2 | |
1 | 锡*1 | 100 | 100 | 100 |
2 | 甲磺酸 | 17 | 17 | 17 |
3 | 聚氧乙烯月桂胺 | 4 | 4 | 4 |
4 | 邻苯二酚 | 1 | 1 | 1 |
5 | 甲基丙烯酸 | 2.0 | 2.0 | 0.8 |
6 | 1-萘醛 | 0.1 | 0.75 | 0.75 |
7 | 甲醇 | 1.7 | 12.6 | 12.6 |
*1:磺酸锡中的锡量
实施例2
通过锡电镀的盲孔的填充:
水洗具有长宽比6(10φ×60D)的盲孔的硅晶圆基板,进行前处理。将经前处理的基板浸渍于在实施例1所制备的锡用电镀液(比较品1、实施品1)中1分钟,以0.075A/dm2的电流密度进行规定时间(15分钟(比较品1)或20分钟(实施品1))的电镀。从电镀后的基板剖面观察盲孔的填充状况(图1)。
在比较品1中,在盲孔底部没有析出可观察到空隙,在实施品1中,可确认到从盲孔底部的优先析出。
实施例3
通过锡电镀的盲孔的填充:
在对与实施例2中使用的同样的基板进行前处理后,浸渍于实施例1中制备的锡用电镀液(实施品1或比较品2),以0.05A/dm2的电流密度进行规定时间(15分钟、30分钟、60分钟、90分钟、120分钟(仅实施品1))的电镀。从电镀后的基板剖面观察盲孔的填充状况(图2及图3)。
在比较品2中,即使进行了90分钟的镀敷后,也未进行盲孔内的填充,但实施品1随着镀敷时间增加析出量,以120分钟的镀敷几乎可填充100%。
实施例4
通过锡电镀的盲孔的填充:
在对与实施例2中使用的同样的基板进行前处理后,浸渍于实施例1中制备的锡用电镀液(实施品1),改变为以0.075A/dm2的电流密度进行20分钟电镀、以0.15A/dm2的电流密度进行10分钟电镀、以0.3A/dm2的电流密度进行10分钟电镀。
通过该电镀,以40分钟完全填充了盲孔。与电流密度设为一定的情形相比,通过将电流密度设为阶段性提高的情形缩短了约65%的盲孔的填充时间。
实施例5
锡用电镀液的制备:
通过混合成分1~5、7后,再混合成分6,从而制备下述组成的锡用电镀液。
表2
单位全部为g/L
实施品2 | ||
1 | 锡*1 | 100 |
2 | 甲磺酸 | 100 |
3 | 聚氧乙烯月桂胺 | 4 |
4 | 邻苯二酚 | 1 |
5 | 甲基丙烯酸 | 2.0 |
6 | 1-萘醛 | 0.5 |
7 | 甲醇 | 8.4 |
*1:磺酸锡中的锡量
实施例6
通过锡电镀的盲孔的填充:
对具有长宽比0.57(70φ×40D)的盲孔的印刷配线板以40℃进行碱性脱脂处理后,通过酸活性处理以室温进行前处理10秒钟。将该经前处理的基板浸渍于实施例5中制备的锡用电镀液(实施品2),以1.5A/dm2的电流密度进行规定时间(15分钟、25分钟或35分钟)的电镀。从电镀后的基板剖面观察盲孔的填充状况(图4)。
从开始镀敷时可确认到自盲孔底部的析出,以25分钟几乎填充了盲孔内,还确认了以35分钟完全填充盲孔及向表面析出。另外,确认了盲孔填充后的表面的析出膜厚可任意地控制。
实施例7
锡用电镀液的制备:
通过混合成分1~5、8后,再混合成分6或7,从而制备下述组成的锡用电镀液。
表3
单位全部为g/L
实施品3 | 实施品4 | ||
1 | 锡*1 | 100 | 100 |
2 | 甲磺酸 | 17 | 17 |
3 | 聚氧乙烯月桂胺 | 4 | 4 |
4 | 邻苯二酚 | 1 | 1 |
5 | 甲基丙烯酸 | 1.5 | 1.5 |
6 | 1-萘醛 | 1.0 | - |
7 | 亚芐基丙酮 | - | 1.0 |
8 | 甲醇 | 16.8 | 16.8 |
*1:磺酸锡中的锡量
实施例8
通过锡电镀的盲孔的填充:
对具有长宽比5(20φ×100D)的盲孔的硅晶圆基板进行前处理后,浸渍于实施例7中制备的锡用电镀液(实施品3或实施品4),以0.2A/dm2的电流密度进行电镀至盲孔被填充为止。
使用实施品3的电镀液进行电镀时,以100分钟完全填充了盲孔,使用实施品4的电镀液进行电镀时,以110分钟完全填充了盲孔。
实施例9
锡合金用电镀液的制备:
通过混合成分1~6、8后,再混合成分7,从而制备下述组成的锡合金用电镀液。
表4
单位全部为g/L
实施品5 | ||
1 | 锡*1 | 100 |
2 | 铅*2 | 10 |
3 | 甲磺酸 | 100 |
4 | 聚氧乙烯月桂胺 | 4 |
5 | 邻苯二酚 | 1 |
6 | 甲基丙烯酸 | 2.0 |
7 | 1-萘醛 | 0.5 |
8 | 甲醇 | 8.4 |
*1:磺酸锡中的锡量
*2:甲磺酸铅中的铅量
实施例10
通过锡合金电镀的盲孔的填充:
在对与实施例6中使用的同样的基板进行前处理后,浸渍于实施例9中制备的锡合金用电镀液(实施品5),以1.5A/dm2的电流密度进行电镀30分钟。
通过该电镀,完全填充了盲孔。另外,关于填充至盲孔的金属进行萤光X射线分析时,是锡和铅分别为87%和13%的合金。
产业上的可利用性
根据本发明,可通过锡或锡合金填充盲孔或通孔。因此,本发明可利用于半导体的立体封装或印刷配线板的盲孔或通孔的填充工序、或硅贯通电极的形成。
Claims (4)
1.一种盲孔或通孔的镀敷填充方法,其特征在于,对具有盲孔或通孔的被镀敷物以以下的锡或锡合金用电镀液进行电镀,所述锡或锡合金用电镀液含有以下的成分(a)及(b):
(a)选自甲基丙烯酸及丙烯酸的含羧基的化合物中的1种或2种,
(b)选自亚苄基丙酮、萘醛及氯苯甲醛的含羰基的化合物中的1种或2种,
且成分(a)为1.3g/L以上,以及成分(b)为0.3g/L以上,
成分(b)与成分(a)的摩尔比为10以下。
2.如权利要求1所述的盲孔或通孔的镀敷填充方法,其中,将电镀中的电流密度设为比电镀开始时高。
3.一种电子电路基板的制造方法,其特征在于,其包括对具有盲孔或通孔的基板进行镀敷填充的工序,以权利要求1或2所述的盲孔或通孔的镀敷填充方法进行镀敷填充。
4.一种锡或锡合金用电镀液用于填充盲孔或通孔的应用,其特征在于,所述锡或锡合金用电镀液含有以下的成分(a)及(b):
(a)选自甲基丙烯酸及丙烯酸的含羧基的化合物中的1种或2种,
(b)选自亚苄基丙酮、萘醛及氯苯甲醛的含羰基的化合物中的1种或2种,
且成分(a)为1.3g/L以上,以及成分(b)为0.3g/L以上,
成分(b)与成分(a)的摩尔比为10以下。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-133292 | 2013-06-26 | ||
JP2013133292A JP6006683B2 (ja) | 2013-06-26 | 2013-06-26 | スズまたはスズ合金用電気メッキ液およびその用途 |
PCT/JP2014/062367 WO2014208204A1 (ja) | 2013-06-26 | 2014-05-08 | スズまたはスズ合金用電気メッキ液およびその用途 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105308218A CN105308218A (zh) | 2016-02-03 |
CN105308218B true CN105308218B (zh) | 2018-07-13 |
Family
ID=52141557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480033173.1A Active CN105308218B (zh) | 2013-06-26 | 2014-05-08 | 锡或锡合金用电镀液及其用途 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20160130712A1 (zh) |
JP (1) | JP6006683B2 (zh) |
KR (1) | KR20160024868A (zh) |
CN (1) | CN105308218B (zh) |
TW (1) | TWI625428B (zh) |
WO (1) | WO2014208204A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102233334B1 (ko) * | 2014-04-28 | 2021-03-29 | 삼성전자주식회사 | 주석 도금액, 주석 도금 장치 및 상기 주석 도금액을 이용한 반도체 장치 제조 방법 |
CN105755513A (zh) * | 2016-04-28 | 2016-07-13 | 四川昊吉科技有限公司 | 一种镀锡防腐剂 |
JP6834070B2 (ja) * | 2016-06-13 | 2021-02-24 | 石原ケミカル株式会社 | 電気スズ及びスズ合金メッキ浴、当該メッキ浴を用いて電着物を形成した電子部品の製造方法 |
KR20180024765A (ko) * | 2016-08-31 | 2018-03-08 | 주식회사 호진플라텍 | 전기도금을 이용한 주석-비스무트-납 삼원합금 솔더 조성물 |
JP6620858B2 (ja) | 2017-10-24 | 2019-12-18 | 三菱マテリアル株式会社 | 錫又は錫合金めっき堆積層の形成方法 |
WO2019082884A1 (ja) | 2017-10-24 | 2019-05-02 | 三菱マテリアル株式会社 | 錫又は錫合金めっき液 |
WO2019082885A1 (ja) | 2017-10-24 | 2019-05-02 | 三菱マテリアル株式会社 | 錫又は錫合金めっき液 |
JP6620859B2 (ja) | 2017-10-24 | 2019-12-18 | 三菱マテリアル株式会社 | 錫又は錫合金めっき堆積層の形成方法 |
KR20200133330A (ko) | 2018-03-20 | 2020-11-27 | 미쓰비시 마테리알 가부시키가이샤 | 주석 또는 주석 합금의 도금액, 범프의 형성 방법, 회로 기판의 제조 방법 |
WO2019181905A1 (ja) | 2018-03-20 | 2019-09-26 | 三菱マテリアル株式会社 | 錫又は錫合金のめっき液、バンプの形成方法、回路基板の製造方法 |
WO2021153160A1 (ja) | 2020-01-27 | 2021-08-05 | 三菱マテリアル株式会社 | 錫又は錫合金電解めっき液、バンプの形成方法、及び回路基板の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4530741A (en) * | 1984-07-12 | 1985-07-23 | Columbia Chemical Corporation | Aqueous acid plating bath and brightener composition for producing bright electrodeposits of tin |
US6508927B2 (en) * | 1998-11-05 | 2003-01-21 | C. Uyemura & Co., Ltd. | Tin-copper alloy electroplating bath |
JP4077119B2 (ja) * | 1999-06-30 | 2008-04-16 | エヌ・イーケムキャット株式会社 | 錫−ビスマス合金電気めっき浴およびめっき方法 |
JP2001089894A (ja) * | 1999-09-22 | 2001-04-03 | Ishihara Chem Co Ltd | スズ合金メッキを施した表面被覆材料、並びに当該被覆材料を利用した電子部品 |
JP4547583B2 (ja) * | 1999-09-24 | 2010-09-22 | 石原薬品株式会社 | スズ合金メッキを施した表面被覆材料、並びに当該被覆材料を利用した電子部品 |
JP2004193520A (ja) * | 2002-12-13 | 2004-07-08 | Sumitomo Bakelite Co Ltd | プリント配線板の製造方法 |
JP5158303B2 (ja) * | 2006-04-14 | 2013-03-06 | 上村工業株式会社 | 錫電気めっき浴、錫めっき皮膜、錫電気めっき方法及び電子機器構成部品 |
CN102187749A (zh) * | 2008-10-21 | 2011-09-14 | 埃托特克德国有限公司 | 用于在衬底上形成焊料沉积物的方法 |
JP5574912B2 (ja) * | 2010-10-22 | 2014-08-20 | ローム・アンド・ハース電子材料株式会社 | スズめっき液 |
-
2013
- 2013-06-26 JP JP2013133292A patent/JP6006683B2/ja active Active
-
2014
- 2014-05-08 CN CN201480033173.1A patent/CN105308218B/zh active Active
- 2014-05-08 WO PCT/JP2014/062367 patent/WO2014208204A1/ja active Application Filing
- 2014-05-08 US US14/898,288 patent/US20160130712A1/en not_active Abandoned
- 2014-05-08 KR KR1020157035631A patent/KR20160024868A/ko not_active Application Discontinuation
- 2014-05-29 TW TW103118809A patent/TWI625428B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI625428B (zh) | 2018-06-01 |
KR20160024868A (ko) | 2016-03-07 |
CN105308218A (zh) | 2016-02-03 |
JP2015007276A (ja) | 2015-01-15 |
JP6006683B2 (ja) | 2016-10-12 |
US20160130712A1 (en) | 2016-05-12 |
TW201510295A (zh) | 2015-03-16 |
WO2014208204A1 (ja) | 2014-12-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105308218B (zh) | 锡或锡合金用电镀液及其用途 | |
US7968444B2 (en) | Lead-free tin alloy electroplating compositions and methods | |
EP2749672B1 (en) | Tin electroplating liquid | |
KR100865923B1 (ko) | 도금 막 및 그 형성 방법 | |
EP3004429B1 (en) | Electroplating baths of silver and tin alloys | |
JP4812365B2 (ja) | 錫電気めっき液および錫電気めっき方法 | |
KR20070026832A (ko) | 주석계 도금 피막 및 그 형성 방법 | |
CA2883815A1 (en) | Plating solution and plating process for multi-layer cyanide-free plating copper-tin alloy coating, and coins made by the process | |
EP3284849A1 (en) | Multi-layer electrical contact element | |
CN105671602A (zh) | 一种无氰亚硫酸盐的Au-Cu合金电镀液及应用 | |
CN109154100A (zh) | 可溶性铜阳极、电解铜电镀装置、电解铜电镀方法及酸性电解铜电镀液的保存方法 | |
Kim et al. | Effect of chemical composition on adhesion of directly electrodeposited copper film on TiN | |
CN106591897B (zh) | 一种无氰离子液体镀铜溶液及镀铜工艺 | |
CN111356789B (zh) | 锡或锡合金电镀液 | |
Goh et al. | Electrodeposition of lead‐free solder alloys | |
EP2392694A1 (en) | Method for etching of copper and copper alloys | |
US4615774A (en) | Gold alloy plating bath and process | |
JP6621169B2 (ja) | めっき品の製造方法 | |
CN107709628B (zh) | 用于电解硬质金镀敷液的防置换剂和包含其的电解硬质金镀敷液 | |
WO2019082885A1 (ja) | 錫又は錫合金めっき液 | |
JPH0762588A (ja) | 純金めっき液 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |