CN105264675B - 层压有磷光体片的发光二极管及其制造方法 - Google Patents

层压有磷光体片的发光二极管及其制造方法 Download PDF

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Publication number
CN105264675B
CN105264675B CN201480032168.9A CN201480032168A CN105264675B CN 105264675 B CN105264675 B CN 105264675B CN 201480032168 A CN201480032168 A CN 201480032168A CN 105264675 B CN105264675 B CN 105264675B
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Prior art keywords
film
led
wavelength conversion
multiple led
conversion film
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CN201480032168.9A
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Chinese (zh)
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CN105264675A (zh
Inventor
P.马瓦沃尔德
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Lumileds Holding BV
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Lumileds Holding BV
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8514Wavelength conversion means characterised by their shape, e.g. plate or foil
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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CN201480032168.9A 2013-06-06 2014-05-22 层压有磷光体片的发光二极管及其制造方法 Active CN105264675B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361831750P 2013-06-06 2013-06-06
US61/831750 2013-06-06
PCT/IB2014/061622 WO2014195819A1 (en) 2013-06-06 2014-05-22 Light emitting diode laminated with a phosphor sheet and manufacturing method thereof

Publications (2)

Publication Number Publication Date
CN105264675A CN105264675A (zh) 2016-01-20
CN105264675B true CN105264675B (zh) 2019-03-08

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CN201480032168.9A Active CN105264675B (zh) 2013-06-06 2014-05-22 层压有磷光体片的发光二极管及其制造方法

Country Status (7)

Country Link
US (1) US9985186B2 (https=)
EP (1) EP3005427B1 (https=)
JP (1) JP6370892B2 (https=)
KR (1) KR102227814B1 (https=)
CN (1) CN105264675B (https=)
TW (1) TWI691100B (https=)
WO (1) WO2014195819A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9911907B2 (en) * 2014-07-28 2018-03-06 Epistar Corporation Light-emitting apparatus
EP3210245B1 (en) * 2014-10-24 2019-04-24 Dow Silicones Corporation Vacuum lamination method for forming a conformally coated article
CN105990496B (zh) * 2015-03-04 2018-11-16 光宝光电(常州)有限公司 Led封装结构及其制造方法
DE102015105474A1 (de) * 2015-04-10 2016-10-13 Osram Opto Semiconductors Gmbh Konverterbauteil für eine optoelektronische Leuchtvorrichtung
DE102015109413A1 (de) * 2015-06-12 2016-12-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Konversions-Halbleiterchips und Verbund von Konversions-Halbleiterchips
JP2017092092A (ja) * 2015-11-04 2017-05-25 豊田合成株式会社 発光装置の製造方法
WO2018139687A1 (ko) * 2017-01-25 2018-08-02 주식회사 에스엘네트웍스 Led 모듈
JP2018152463A (ja) * 2017-03-13 2018-09-27 スタンレー電気株式会社 半導体発光装置
KR102423549B1 (ko) * 2017-07-28 2022-07-22 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 실리콘 필름 제조 방법, 반도체소자 제조방법 및 반도체소자
TWI665797B (zh) * 2018-02-14 2019-07-11 Uniflex Technology Inc. 微發光二極體模組及其製法
CN110446383B (zh) * 2018-05-02 2021-03-05 毅力科技有限公司 在至少一电子模块上形成保护膜的方法
US11552228B2 (en) 2018-08-17 2023-01-10 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing an optoelectronic component
JP7243330B2 (ja) * 2019-03-15 2023-03-22 市光工業株式会社 発光素子及び車両用灯具、並びに発光素子の製造方法
CN118630121B (zh) * 2024-08-10 2024-11-08 南通东升灯饰有限公司 一种led封装体

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012023119A1 (en) * 2010-08-20 2012-02-23 Koninklijke Philips Electronics N.V. Lamination process for leds
CN102386111A (zh) * 2010-09-06 2012-03-21 日东电工株式会社 电子部件装置的制造方法和电子部件封装用树脂组合物

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5866952A (en) * 1995-11-30 1999-02-02 Lockheed Martin Corporation High density interconnected circuit module with a compliant layer as part of a stress-reducing molded substrate
JP4122737B2 (ja) * 2001-07-26 2008-07-23 松下電工株式会社 発光装置の製造方法
JP2005294733A (ja) * 2004-04-05 2005-10-20 Nitto Denko Corp 光半導体素子封止用シートおよび該シートを用いた光半導体装置の製造方法
JP2006302965A (ja) * 2005-04-15 2006-11-02 Sharp Corp 半導体発光装置およびその製造方法
US7344952B2 (en) * 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
JP5463646B2 (ja) * 2008-10-08 2014-04-09 日立化成株式会社 光モジュール
JP5310536B2 (ja) * 2009-12-25 2013-10-09 豊田合成株式会社 発光装置の製造方法
TWI476959B (zh) * 2010-04-11 2015-03-11 邱羅利士公司 轉移均勻螢光層至一物件上之方法及所製得之發光結構
KR101135093B1 (ko) * 2011-02-22 2012-04-16 서울대학교산학협력단 발광 다이오드의 균일 코팅 방법
US9349927B2 (en) * 2011-10-18 2016-05-24 Nitto Denko Corporation Encapsulating sheet and optical semiconductor element device
JP2013140848A (ja) * 2011-12-28 2013-07-18 Nitto Denko Corp 封止用シートおよび光半導体素子装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012023119A1 (en) * 2010-08-20 2012-02-23 Koninklijke Philips Electronics N.V. Lamination process for leds
CN102386111A (zh) * 2010-09-06 2012-03-21 日东电工株式会社 电子部件装置的制造方法和电子部件封装用树脂组合物

Also Published As

Publication number Publication date
EP3005427A1 (en) 2016-04-13
TW201511356A (zh) 2015-03-16
US20160126429A1 (en) 2016-05-05
KR102227814B1 (ko) 2021-03-16
US9985186B2 (en) 2018-05-29
JP6370892B2 (ja) 2018-08-08
KR20160018662A (ko) 2016-02-17
EP3005427B1 (en) 2019-01-16
JP2016521013A (ja) 2016-07-14
CN105264675A (zh) 2016-01-20
TWI691100B (zh) 2020-04-11
WO2014195819A1 (en) 2014-12-11

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