TWI691100B - 於一半導體裝置上方層壓一層之技術 - Google Patents

於一半導體裝置上方層壓一層之技術 Download PDF

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Publication number
TWI691100B
TWI691100B TW103119797A TW103119797A TWI691100B TW I691100 B TWI691100 B TW I691100B TW 103119797 A TW103119797 A TW 103119797A TW 103119797 A TW103119797 A TW 103119797A TW I691100 B TWI691100 B TW I691100B
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TW
Taiwan
Prior art keywords
led
leds
film
wavelength conversion
temperature
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Application number
TW103119797A
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English (en)
Chinese (zh)
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TW201511356A (zh
Inventor
彼得 曼荷渥德
Original Assignee
荷蘭商露明控股公司
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Application filed by 荷蘭商露明控股公司 filed Critical 荷蘭商露明控股公司
Publication of TW201511356A publication Critical patent/TW201511356A/zh
Application granted granted Critical
Publication of TWI691100B publication Critical patent/TWI691100B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Led Device Packages (AREA)
TW103119797A 2013-06-06 2014-06-06 於一半導體裝置上方層壓一層之技術 TWI691100B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361831750P 2013-06-06 2013-06-06
US61/831,750 2013-06-06

Publications (2)

Publication Number Publication Date
TW201511356A TW201511356A (zh) 2015-03-16
TWI691100B true TWI691100B (zh) 2020-04-11

Family

ID=50933455

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103119797A TWI691100B (zh) 2013-06-06 2014-06-06 於一半導體裝置上方層壓一層之技術

Country Status (7)

Country Link
US (1) US9985186B2 (https=)
EP (1) EP3005427B1 (https=)
JP (1) JP6370892B2 (https=)
KR (1) KR102227814B1 (https=)
CN (1) CN105264675B (https=)
TW (1) TWI691100B (https=)
WO (1) WO2014195819A1 (https=)

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US9911907B2 (en) * 2014-07-28 2018-03-06 Epistar Corporation Light-emitting apparatus
EP3210245B1 (en) * 2014-10-24 2019-04-24 Dow Silicones Corporation Vacuum lamination method for forming a conformally coated article
CN105990496B (zh) * 2015-03-04 2018-11-16 光宝光电(常州)有限公司 Led封装结构及其制造方法
DE102015105474A1 (de) * 2015-04-10 2016-10-13 Osram Opto Semiconductors Gmbh Konverterbauteil für eine optoelektronische Leuchtvorrichtung
DE102015109413A1 (de) * 2015-06-12 2016-12-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Konversions-Halbleiterchips und Verbund von Konversions-Halbleiterchips
JP2017092092A (ja) * 2015-11-04 2017-05-25 豊田合成株式会社 発光装置の製造方法
WO2018139687A1 (ko) * 2017-01-25 2018-08-02 주식회사 에스엘네트웍스 Led 모듈
JP2018152463A (ja) * 2017-03-13 2018-09-27 スタンレー電気株式会社 半導体発光装置
KR102423549B1 (ko) * 2017-07-28 2022-07-22 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 실리콘 필름 제조 방법, 반도체소자 제조방법 및 반도체소자
TWI665797B (zh) * 2018-02-14 2019-07-11 Uniflex Technology Inc. 微發光二極體模組及其製法
CN110446383B (zh) * 2018-05-02 2021-03-05 毅力科技有限公司 在至少一电子模块上形成保护膜的方法
US11552228B2 (en) 2018-08-17 2023-01-10 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing an optoelectronic component
JP7243330B2 (ja) * 2019-03-15 2023-03-22 市光工業株式会社 発光素子及び車両用灯具、並びに発光素子の製造方法
CN118630121B (zh) * 2024-08-10 2024-11-08 南通东升灯饰有限公司 一种led封装体

Citations (4)

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Publication number Priority date Publication date Assignee Title
TW200539463A (en) * 2004-04-05 2005-12-01 Nitto Denko Corp Sheet for optical-semiconductor element encapsulation and process for producing optical semiconductor device using the sheet
TW201135984A (en) * 2010-04-11 2011-10-16 Achrolux Inc Method for transferring a uniform phosphor layer on an article and light-emitting structure fabricated by the method
TW201216526A (en) * 2010-08-20 2012-04-16 Koninkl Philips Electronics Nv Lamination process for LEDs
EP2584619A2 (en) * 2011-10-18 2013-04-24 Nitto Denko Corporation Encapsulating sheet and optical semiconductor element device

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US5866952A (en) * 1995-11-30 1999-02-02 Lockheed Martin Corporation High density interconnected circuit module with a compliant layer as part of a stress-reducing molded substrate
JP4122737B2 (ja) * 2001-07-26 2008-07-23 松下電工株式会社 発光装置の製造方法
JP2006302965A (ja) * 2005-04-15 2006-11-02 Sharp Corp 半導体発光装置およびその製造方法
US7344952B2 (en) * 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
JP5463646B2 (ja) * 2008-10-08 2014-04-09 日立化成株式会社 光モジュール
JP5310536B2 (ja) * 2009-12-25 2013-10-09 豊田合成株式会社 発光装置の製造方法
JP5349432B2 (ja) * 2010-09-06 2013-11-20 日東電工株式会社 電子部品装置の製法およびそれに用いる電子部品封止用樹脂組成物シート
KR101135093B1 (ko) * 2011-02-22 2012-04-16 서울대학교산학협력단 발광 다이오드의 균일 코팅 방법
JP2013140848A (ja) * 2011-12-28 2013-07-18 Nitto Denko Corp 封止用シートおよび光半導体素子装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200539463A (en) * 2004-04-05 2005-12-01 Nitto Denko Corp Sheet for optical-semiconductor element encapsulation and process for producing optical semiconductor device using the sheet
TW201135984A (en) * 2010-04-11 2011-10-16 Achrolux Inc Method for transferring a uniform phosphor layer on an article and light-emitting structure fabricated by the method
TW201216526A (en) * 2010-08-20 2012-04-16 Koninkl Philips Electronics Nv Lamination process for LEDs
EP2584619A2 (en) * 2011-10-18 2013-04-24 Nitto Denko Corporation Encapsulating sheet and optical semiconductor element device

Also Published As

Publication number Publication date
EP3005427A1 (en) 2016-04-13
TW201511356A (zh) 2015-03-16
CN105264675B (zh) 2019-03-08
US20160126429A1 (en) 2016-05-05
KR102227814B1 (ko) 2021-03-16
US9985186B2 (en) 2018-05-29
JP6370892B2 (ja) 2018-08-08
KR20160018662A (ko) 2016-02-17
EP3005427B1 (en) 2019-01-16
JP2016521013A (ja) 2016-07-14
CN105264675A (zh) 2016-01-20
WO2014195819A1 (en) 2014-12-11

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