CN105263853B - 具有均匀工作特性的mems数字可变电容器的非对称阵列 - Google Patents

具有均匀工作特性的mems数字可变电容器的非对称阵列 Download PDF

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Publication number
CN105263853B
CN105263853B CN201480032389.6A CN201480032389A CN105263853B CN 105263853 B CN105263853 B CN 105263853B CN 201480032389 A CN201480032389 A CN 201480032389A CN 105263853 B CN105263853 B CN 105263853B
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CN
China
Prior art keywords
trap
mems
polyresistor
coupled
variable capacitor
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CN201480032389.6A
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English (en)
Chinese (zh)
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CN105263853A (zh
Inventor
罗伯托·彼得勒斯·范·卡普恩
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Qorvo US Inc
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Cavendish Kinetics Ltd
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Publication of CN105263853A publication Critical patent/CN105263853A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/38—Multiple capacitors, e.g. ganged
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0221—Variable capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Micromachines (AREA)
CN201480032389.6A 2013-06-07 2014-05-30 具有均匀工作特性的mems数字可变电容器的非对称阵列 Active CN105263853B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361832167P 2013-06-07 2013-06-07
US61/832,167 2013-06-07
PCT/US2014/040235 WO2015009360A1 (en) 2013-06-07 2014-05-30 Non-symmetric arrays of mems digital variable capacitor with uniform operating characteristics

Publications (2)

Publication Number Publication Date
CN105263853A CN105263853A (zh) 2016-01-20
CN105263853B true CN105263853B (zh) 2017-03-08

Family

ID=51033537

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480032389.6A Active CN105263853B (zh) 2013-06-07 2014-05-30 具有均匀工作特性的mems数字可变电容器的非对称阵列

Country Status (5)

Country Link
US (1) US10029909B2 (https=)
EP (1) EP3003964B1 (https=)
JP (1) JP6396440B2 (https=)
CN (1) CN105263853B (https=)
WO (1) WO2015009360A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10651170B2 (en) 2017-07-11 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Isolated wells for resistor devices
US11011459B1 (en) * 2020-02-06 2021-05-18 Qualcomm Incorporated Back-end-of-line (BEOL) on-chip sensor
AU2021296908A1 (en) 2020-06-26 2023-02-16 Aprecia Pharmaceuticals LLC Rapidly-orodispersible tablets having an interior cavity
CN112038091B (zh) 2020-08-04 2022-08-19 厚元技术（香港）有限公司 一种基于mems结构的可调电容
CN115763444B (zh) * 2022-09-08 2026-04-03 上海类比半导体技术有限公司 一种电容器及芯片

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101310206A (zh) * 2005-11-16 2008-11-19 Idc公司 具有设定和锁存电极的mems开关
US20100127376A1 (en) * 2008-11-25 2010-05-27 Karim Nozad O System and method to provide rf shielding for a mems microphone package
CN101986410A (zh) * 2009-07-28 2011-03-16 索尼公司 分路开关、半导体装置、模块和电子装置
US20110291167A1 (en) * 2010-05-28 2011-12-01 Kabushiki Kaisha Toshiba Semiconductor device
US20120025851A1 (en) * 2010-07-30 2012-02-02 Homeijer Brian D Capacitive sensors
US20120119872A1 (en) * 2008-09-17 2012-05-17 STMicroelectronics Pte Ptd. Heater design for heat-trimmed thin film resistors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163429A (ja) 1996-11-29 1998-06-19 Mitsubishi Electric Corp 半導体装置
US6876056B2 (en) * 2001-04-19 2005-04-05 Interuniversitair Microelektronica Centrum (Imec) Method and system for fabrication of integrated tunable/switchable passive microwave and millimeter wave modules
JP4428504B2 (ja) * 2003-04-23 2010-03-10 株式会社ルネサステクノロジ 半導体集積回路装置
JP2007512793A (ja) * 2003-12-01 2007-05-17 オーディオアシクス エー／エス 電圧ポンプを有するマイクロホン
US7491595B2 (en) * 2005-07-06 2009-02-17 Hewlett-Packard Development Company, L.P. Creating high voltage FETs with low voltage process
DE102006061386B3 (de) * 2006-12-23 2008-06-19 Atmel Germany Gmbh Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung
DE112009005017T5 (de) 2009-06-29 2012-07-26 Fujitsu Limited Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
US8941176B2 (en) * 2009-09-29 2015-01-27 Stmicroelectronics S.R.L. Integrated device with raised locos insulation regions and process for manufacturing such device
US8878312B2 (en) * 2011-03-01 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical bypass structure for MEMS device
WO2013033613A2 (en) 2011-09-02 2013-03-07 Cavendish Kinetics, Inc Rf mems isolation, series and shunt dvc, and small mems
US8981861B2 (en) * 2012-06-08 2015-03-17 Hittite Microwave Corporation Injection locked pulsed oscillator
JP2014053529A (ja) * 2012-09-10 2014-03-20 Toshiba Corp 電子装置
US9275991B2 (en) * 2013-02-13 2016-03-01 Analog Devices, Inc. Apparatus for transceiver signal isolation and voltage clamp

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101310206A (zh) * 2005-11-16 2008-11-19 Idc公司 具有设定和锁存电极的mems开关
US20120119872A1 (en) * 2008-09-17 2012-05-17 STMicroelectronics Pte Ptd. Heater design for heat-trimmed thin film resistors
US20100127376A1 (en) * 2008-11-25 2010-05-27 Karim Nozad O System and method to provide rf shielding for a mems microphone package
CN101986410A (zh) * 2009-07-28 2011-03-16 索尼公司 分路开关、半导体装置、模块和电子装置
US20110291167A1 (en) * 2010-05-28 2011-12-01 Kabushiki Kaisha Toshiba Semiconductor device
US20120025851A1 (en) * 2010-07-30 2012-02-02 Homeijer Brian D Capacitive sensors

Also Published As

Publication number Publication date
US10029909B2 (en) 2018-07-24
JP2016521919A (ja) 2016-07-25
CN105263853A (zh) 2016-01-20
US20160115014A1 (en) 2016-04-28
EP3003964A1 (en) 2016-04-13
EP3003964B1 (en) 2021-04-14
WO2015009360A1 (en) 2015-01-22
JP6396440B2 (ja) 2018-09-26

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Effective date of registration: 20220330

Address after: North Carolina

Patentee after: QORVO US, Inc.

Address before: California, USA

Patentee before: CAVENDISH KINETICS, Inc.