CN105191128B - 用于高频时钟互连的具有输出摆幅检测器的电流模式缓冲器 - Google Patents

用于高频时钟互连的具有输出摆幅检测器的电流模式缓冲器 Download PDF

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Publication number
CN105191128B
CN105191128B CN201480014291.8A CN201480014291A CN105191128B CN 105191128 B CN105191128 B CN 105191128B CN 201480014291 A CN201480014291 A CN 201480014291A CN 105191128 B CN105191128 B CN 105191128B
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Prior art keywords
nmos transistor
voltage
circuit
pmos transistor
coupled
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CN201480014291.8A
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Chinese (zh)
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CN105191128A (zh
Inventor
D·朴
L·刘
S·荣
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Qualcomm Inc
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Qualcomm Inc
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/08Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K6/00Manipulating pulses having a finite slope and not covered by one of the other main groups of this subclass
    • H03K6/02Amplifying pulses

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)
  • Manipulation Of Pulses (AREA)
CN201480014291.8A 2013-03-15 2014-03-11 用于高频时钟互连的具有输出摆幅检测器的电流模式缓冲器 Active CN105191128B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/834,861 US8766674B1 (en) 2013-03-15 2013-03-15 Current-mode buffer with output swing detector for high frequency clock interconnect
US13/834,861 2013-03-15
PCT/US2014/023684 WO2014150581A1 (en) 2013-03-15 2014-03-11 Current-mode buffer with output swing detector for high frequency clock interconnect

Publications (2)

Publication Number Publication Date
CN105191128A CN105191128A (zh) 2015-12-23
CN105191128B true CN105191128B (zh) 2018-06-12

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CN201480014291.8A Active CN105191128B (zh) 2013-03-15 2014-03-11 用于高频时钟互连的具有输出摆幅检测器的电流模式缓冲器

Country Status (6)

Country Link
US (1) US8766674B1 (enExample)
EP (1) EP2974020B1 (enExample)
JP (1) JP6419770B2 (enExample)
KR (1) KR20150131141A (enExample)
CN (1) CN105191128B (enExample)
WO (1) WO2014150581A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9985644B1 (en) * 2018-01-16 2018-05-29 Realtek Semiconductor Corp. Digital to-time converter and method therof
US10219339B1 (en) * 2018-02-19 2019-02-26 Ixys, Llc Current correction techniques for accurate high current short channel driver
US11482155B2 (en) * 2018-07-20 2022-10-25 Semiconductor Energy Laboratory Co., Ltd. Receiving circuit
FR3102581B1 (fr) * 2019-10-23 2021-10-22 St Microelectronics Rousset Régulateur de tension

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177819B1 (en) * 1999-04-01 2001-01-23 Xilinx, Inc. Integrated circuit driver with adjustable trip point
US6323756B1 (en) * 1997-09-02 2001-11-27 Matsushita Electric Industrial Co., Ltd. Data transmitter
CN102577123A (zh) * 2009-10-21 2012-07-11 高通股份有限公司 具有动态偏置的rf缓冲器电路

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US4539489A (en) * 1983-06-22 1985-09-03 Motorola, Inc. CMOS Schmitt trigger circuit
US5459437A (en) * 1994-05-10 1995-10-17 Integrated Device Technology Logic gate with controllable hysteresis and high frequency voltage controlled oscillator
US5497127A (en) * 1994-12-14 1996-03-05 David Sarnoff Research Center, Inc. Wide frequency range CMOS relaxation oscillator with variable hysteresis
US5726596A (en) * 1996-03-01 1998-03-10 Hewlett-Packard Company High-performance, low-skew clocking scheme for single-phase, high-frequency global VLSI processor
US5939937A (en) * 1997-09-29 1999-08-17 Siemens Aktiengesellschaft Constant current CMOS output driver circuit with dual gate transistor devices
JP3152204B2 (ja) * 1998-06-02 2001-04-03 日本電気株式会社 スルーレート出力回路
JP3520913B2 (ja) * 2000-06-09 2004-04-19 日本電気株式会社 信号線制御方式
US6316977B1 (en) * 2000-07-14 2001-11-13 Pmc-Sierra, Inc. Low charge-injection charge pump
US6356106B1 (en) * 2000-09-12 2002-03-12 Micron Technology, Inc. Active termination in a multidrop memory system
US7493149B1 (en) 2002-03-26 2009-02-17 National Semiconductor Corporation Method and system for minimizing power consumption in mobile devices using cooperative adaptive voltage and threshold scaling
JP4869569B2 (ja) 2004-06-23 2012-02-08 株式会社 日立ディスプレイズ 表示装置
KR100890041B1 (ko) * 2006-12-29 2009-03-25 주식회사 하이닉스반도체 반도체 소자의 클럭 버퍼 회로
US7502719B2 (en) 2007-01-25 2009-03-10 Monolithic Power Systems, Inc. Method and apparatus for overshoot and undershoot errors correction in analog low dropout regulators
US7652511B2 (en) * 2008-01-16 2010-01-26 Amazing Microelectronic Corp. Slew-rate control circuitry with output buffer and feedback
CN101540603A (zh) 2008-03-21 2009-09-23 意法半导体研发(上海)有限公司 用于高频信号的功效推挽式缓冲电路、系统和方法
US7902904B2 (en) * 2008-12-09 2011-03-08 Lsi Corporation Bias circuit scheme for improved reliability in high voltage supply with low voltage device
KR20110132864A (ko) 2010-06-03 2011-12-09 삼성전자주식회사 와이드 랜지 주파수 입력에 적합한 위상 보간 회로 및 그에 따른 출력 특성안정화 방법
JP5545751B2 (ja) * 2010-11-25 2014-07-09 三菱電機株式会社 ピークホールド回路及びボトムホールド回路
US8860469B1 (en) * 2012-07-13 2014-10-14 Altera Corporation Apparatus and methods for transmitter output swing calibration

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6323756B1 (en) * 1997-09-02 2001-11-27 Matsushita Electric Industrial Co., Ltd. Data transmitter
US6177819B1 (en) * 1999-04-01 2001-01-23 Xilinx, Inc. Integrated circuit driver with adjustable trip point
CN102577123A (zh) * 2009-10-21 2012-07-11 高通股份有限公司 具有动态偏置的rf缓冲器电路

Also Published As

Publication number Publication date
CN105191128A (zh) 2015-12-23
KR20150131141A (ko) 2015-11-24
JP2016518732A (ja) 2016-06-23
US8766674B1 (en) 2014-07-01
EP2974020A1 (en) 2016-01-20
EP2974020B1 (en) 2019-02-27
JP6419770B2 (ja) 2018-11-07
WO2014150581A1 (en) 2014-09-25

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