CN105103270A - 用于准备用于成像的样本的方法 - Google Patents

用于准备用于成像的样本的方法 Download PDF

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Publication number
CN105103270A
CN105103270A CN201380074003.3A CN201380074003A CN105103270A CN 105103270 A CN105103270 A CN 105103270A CN 201380074003 A CN201380074003 A CN 201380074003A CN 105103270 A CN105103270 A CN 105103270A
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CN
China
Prior art keywords
ion beam
workpiece
sample
deposition
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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CN201380074003.3A
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English (en)
Chinese (zh)
Inventor
M.施米特
J.布拉克伍德
S.斯通
S.H.李
R.凯利
T.兰丁
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FEI Co
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FEI Co
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Publication date
Priority claimed from US14/081,947 external-priority patent/US8912490B2/en
Application filed by FEI Co filed Critical FEI Co
Publication of CN105103270A publication Critical patent/CN105103270A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201380074003.3A 2012-12-31 2013-12-30 用于准备用于成像的样本的方法 Pending CN105103270A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201261747512P 2012-12-31 2012-12-31
US61/747512 2012-12-31
US14/081947 2013-11-15
US14/081,947 US8912490B2 (en) 2011-06-03 2013-11-15 Method for preparing samples for imaging
EP13197357.0A EP2749863A3 (en) 2012-12-31 2013-12-16 Method for preparing samples for imaging
EP13197357.0 2013-12-16
PCT/US2013/078345 WO2014106200A2 (en) 2012-12-31 2013-12-30 Method for preparing samples for imaging

Publications (1)

Publication Number Publication Date
CN105103270A true CN105103270A (zh) 2015-11-25

Family

ID=49998017

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201380074003.3A Pending CN105103270A (zh) 2012-12-31 2013-12-30 用于准备用于成像的样本的方法
CN201310747134.5A Pending CN103913363A (zh) 2012-12-31 2013-12-31 用于制备用于成像的样本的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201310747134.5A Pending CN103913363A (zh) 2012-12-31 2013-12-31 用于制备用于成像的样本的方法

Country Status (6)

Country Link
US (1) US20150330877A1 (enExample)
EP (2) EP2749863A3 (enExample)
JP (2) JP5925182B2 (enExample)
CN (2) CN105103270A (enExample)
TW (1) TW201432242A (enExample)
WO (1) WO2014106200A2 (enExample)

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CN108956669A (zh) * 2018-06-08 2018-12-07 浙江大学 一种金属燃料颗粒表面氧化层检测方法
CN108982919A (zh) * 2017-06-02 2018-12-11 Fei 公司 用于平面视薄片制备的沿面气体辅助蚀刻
CN109256312A (zh) * 2017-07-13 2019-01-22 卡尔蔡司显微镜有限责任公司 用于原位制备显微镜样本的方法
CN110312929A (zh) * 2017-02-15 2019-10-08 沙特阿拉伯石油公司 通过使用聚焦离子束以使窗帘效应最小化的岩石样品制备方法
CN110678730A (zh) * 2017-04-20 2020-01-10 元素科学雷射公司 用于极快速信号清除的可调整样本底面
CN114942209A (zh) * 2021-09-23 2022-08-26 数岩科技股份有限公司 岩石的三维成像方法、装置、电子设备及存储介质
CN117007625A (zh) * 2023-09-28 2023-11-07 北京中科科仪股份有限公司 一种pn结的扫描电镜测试方法

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TWI607498B (zh) * 2012-10-05 2017-12-01 Fei公司 使用帶電粒子束曝露樣品中所關注特徵的方法及系統
US9741536B2 (en) 2012-10-05 2017-08-22 Fei Company High aspect ratio structure analysis
CN105200394A (zh) * 2014-06-24 2015-12-30 Fei公司 创建对称fib沉积的方法和系统
US20150369710A1 (en) * 2014-06-24 2015-12-24 Fei Company Method and System of Creating a Symmetrical FIB Deposition
KR102358551B1 (ko) * 2014-08-29 2022-02-04 가부시키가이샤 히다치 하이테크 사이언스 자동 시료편 제작 장치
CN104237567B (zh) * 2014-09-10 2016-05-11 武汉新芯集成电路制造有限公司 一种超薄平面透射电镜样品的制备方法
JP6584786B2 (ja) * 2015-02-13 2019-10-02 株式会社日立ハイテクノロジーズ プラズマイオン源および荷電粒子ビーム装置
CN105223383B (zh) * 2015-08-11 2018-08-28 上海华力微电子有限公司 一种平面tem样品的制备方法
CN105136539B (zh) * 2015-08-26 2019-05-03 上海华力微电子有限公司 一种制备tem芯片样品的方法
CN105300754B (zh) * 2015-09-11 2019-06-28 上海华力微电子有限公司 一种防止tem芯片样品破裂的方法
US9978586B2 (en) * 2015-11-06 2018-05-22 Fei Company Method of material deposition
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
EP3249676B1 (en) 2016-05-27 2018-10-03 FEI Company Dual-beam charged-particle microscope with in situ deposition functionality
JP7214262B2 (ja) * 2017-03-27 2023-01-30 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、試料加工方法
CN110940689B (zh) * 2018-09-20 2022-06-21 无锡华润上华科技有限公司 SiC器件样品的制备方法及SiC器件的形貌分析方法
WO2020100179A1 (ja) * 2018-11-12 2020-05-22 株式会社日立ハイテク 画像形成方法及び画像形成システム
JP7192117B2 (ja) * 2018-11-22 2022-12-19 アプライド マテリアルズ インコーポレイテッド 基板上の限界寸法測定の方法、および基板上の電子デバイスを検査し、カッティングするための装置
US11440151B2 (en) * 2019-06-07 2022-09-13 Applied Materials Israel Ltd. Milling a multi-layered object
DE102019214939A1 (de) * 2019-09-27 2021-04-01 Carl Zeiss Microscopy Gmbh Verfahren zum Analysieren, Abbilden und/oder Bearbeiten eines Gebiets eines Objektsund Teilchenstrahlvorrichtung zum Ausführen des Verfahrens
US10903044B1 (en) * 2020-02-12 2021-01-26 Applied Materials Israel Ltd. Filling empty structures with deposition under high-energy SEM for uniform DE layering
CN111195777A (zh) * 2020-03-02 2020-05-26 河北工程大学 一种陶瓷颗粒增强金属基复合材料超快激光精密刻蚀加工方法
CN112041671B (zh) * 2020-07-24 2023-10-20 长江存储科技有限责任公司 制备和分析薄膜的方法
GB202013591D0 (en) * 2020-08-28 2020-10-14 Oxford Instr Nanotechnology Ltd Sample preparation and method aparatus
TWI753739B (zh) 2021-01-08 2022-01-21 閎康科技股份有限公司 物性分析方法、物性分析試片及其製備方法
US11501951B1 (en) 2021-05-14 2022-11-15 Applied Materials Israel Ltd. X-ray imaging in cross-section using un-cut lamella with background material
CN119395064B (zh) * 2024-12-27 2025-04-18 北京特思迪半导体设备有限公司 半导体材料亚表面损伤层的检测方法

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110312929A (zh) * 2017-02-15 2019-10-08 沙特阿拉伯石油公司 通过使用聚焦离子束以使窗帘效应最小化的岩石样品制备方法
CN110312929B (zh) * 2017-02-15 2022-01-04 沙特阿拉伯石油公司 通过使用聚焦离子束以使窗帘效应最小化的岩石样品制备方法
CN110678730A (zh) * 2017-04-20 2020-01-10 元素科学雷射公司 用于极快速信号清除的可调整样本底面
CN108982919A (zh) * 2017-06-02 2018-12-11 Fei 公司 用于平面视薄片制备的沿面气体辅助蚀刻
CN108982919B (zh) * 2017-06-02 2023-12-12 Fei 公司 用于平面视薄片制备的沿面气体辅助蚀刻
CN109256312A (zh) * 2017-07-13 2019-01-22 卡尔蔡司显微镜有限责任公司 用于原位制备显微镜样本的方法
CN108956669A (zh) * 2018-06-08 2018-12-07 浙江大学 一种金属燃料颗粒表面氧化层检测方法
CN114942209A (zh) * 2021-09-23 2022-08-26 数岩科技股份有限公司 岩石的三维成像方法、装置、电子设备及存储介质
CN117007625A (zh) * 2023-09-28 2023-11-07 北京中科科仪股份有限公司 一种pn结的扫描电镜测试方法

Also Published As

Publication number Publication date
WO2014106200A2 (en) 2014-07-03
TW201432242A (zh) 2014-08-16
EP2939260A4 (en) 2016-01-20
EP2749863A3 (en) 2016-05-04
US20150330877A1 (en) 2015-11-19
CN103913363A (zh) 2014-07-09
JP2016509669A (ja) 2016-03-31
WO2014106200A3 (en) 2014-08-21
JP2014130145A (ja) 2014-07-10
JP5925182B2 (ja) 2016-05-25
EP2939260A2 (en) 2015-11-04
EP2749863A2 (en) 2014-07-02

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Application publication date: 20151125