JP5925182B2 - 撮像のための試料調製方法 - Google Patents

撮像のための試料調製方法 Download PDF

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Publication number
JP5925182B2
JP5925182B2 JP2013268368A JP2013268368A JP5925182B2 JP 5925182 B2 JP5925182 B2 JP 5925182B2 JP 2013268368 A JP2013268368 A JP 2013268368A JP 2013268368 A JP2013268368 A JP 2013268368A JP 5925182 B2 JP5925182 B2 JP 5925182B2
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sample
workpiece
ion beam
guiding
deposited
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JP2014130145A (ja
JP2014130145A5 (enExample
Inventor
シュミット マイケル
シュミット マイケル
ブラックウッド ジェフ
ブラックウッド ジェフ
ストーン ステイシー
ストーン ステイシー
フーン リー サン
フーン リー サン
ケリー ロナルド
ケリー ロナルド
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FEI Co
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FEI Co
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Priority claimed from US14/081,947 external-priority patent/US8912490B2/en
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Publication of JP2014130145A5 publication Critical patent/JP2014130145A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2013268368A 2012-12-31 2013-12-26 撮像のための試料調製方法 Active JP5925182B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261747512P 2012-12-31 2012-12-31
US61/747,512 2012-12-31
US14/081,947 2013-11-15
US14/081,947 US8912490B2 (en) 2011-06-03 2013-11-15 Method for preparing samples for imaging

Publications (3)

Publication Number Publication Date
JP2014130145A JP2014130145A (ja) 2014-07-10
JP2014130145A5 JP2014130145A5 (enExample) 2016-04-14
JP5925182B2 true JP5925182B2 (ja) 2016-05-25

Family

ID=49998017

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2013268368A Active JP5925182B2 (ja) 2012-12-31 2013-12-26 撮像のための試料調製方法
JP2015550848A Pending JP2016509669A (ja) 2012-12-31 2013-12-30 画像化用の試料を作製する方法

Family Applications After (1)

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JP2015550848A Pending JP2016509669A (ja) 2012-12-31 2013-12-30 画像化用の試料を作製する方法

Country Status (6)

Country Link
US (1) US20150330877A1 (enExample)
EP (2) EP2749863A3 (enExample)
JP (2) JP5925182B2 (enExample)
CN (2) CN105103270A (enExample)
TW (1) TW201432242A (enExample)
WO (1) WO2014106200A2 (enExample)

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JP2020518117A (ja) * 2017-04-20 2020-06-18 エレメンタル・サイエンティフィック・レーザーズ・リミテッド・ライアビリティ・カンパニーＥｌｅｍｅｎｔａｌ Ｓｃｉｅｎｔｉｆｉｃ Ｌａｓｅｒｓ， Ｌｌｃ 超高速信号ウォッシュアウトのための調整可能なサンプルフロア
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WO2020100179A1 (ja) * 2018-11-12 2020-05-22 株式会社日立ハイテク 画像形成方法及び画像形成システム
WO2020104031A1 (en) * 2018-11-22 2020-05-28 Applied Materials, Inc. Method for critical dimension measurement on a substrate, and apparatus for inspecting and cutting an electronic device on the substrate
US11440151B2 (en) * 2019-06-07 2022-09-13 Applied Materials Israel Ltd. Milling a multi-layered object
DE102019214939A1 (de) * 2019-09-27 2021-04-01 Carl Zeiss Microscopy Gmbh Verfahren zum Analysieren, Abbilden und/oder Bearbeiten eines Gebiets eines Objektsund Teilchenstrahlvorrichtung zum Ausführen des Verfahrens
US10903044B1 (en) 2020-02-12 2021-01-26 Applied Materials Israel Ltd. Filling empty structures with deposition under high-energy SEM for uniform DE layering
CN111195777A (zh) * 2020-03-02 2020-05-26 河北工程大学 一种陶瓷颗粒增强金属基复合材料超快激光精密刻蚀加工方法
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CN114942209A (zh) * 2021-09-23 2022-08-26 数岩科技股份有限公司 岩石的三维成像方法、装置、电子设备及存储介质
CN117007625A (zh) * 2023-09-28 2023-11-07 北京中科科仪股份有限公司 一种pn结的扫描电镜测试方法
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Also Published As

Publication number Publication date
TW201432242A (zh) 2014-08-16
US20150330877A1 (en) 2015-11-19
WO2014106200A2 (en) 2014-07-03
CN103913363A (zh) 2014-07-09
EP2939260A2 (en) 2015-11-04
CN105103270A (zh) 2015-11-25
EP2749863A2 (en) 2014-07-02
EP2939260A4 (en) 2016-01-20
JP2014130145A (ja) 2014-07-10
JP2016509669A (ja) 2016-03-31
EP2749863A3 (en) 2016-05-04
WO2014106200A3 (en) 2014-08-21

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