JP5925182B2 - 撮像のための試料調製方法 - Google Patents

撮像のための試料調製方法 Download PDF

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Publication number
JP5925182B2
JP5925182B2 JP2013268368A JP2013268368A JP5925182B2 JP 5925182 B2 JP5925182 B2 JP 5925182B2 JP 2013268368 A JP2013268368 A JP 2013268368A JP 2013268368 A JP2013268368 A JP 2013268368A JP 5925182 B2 JP5925182 B2 JP 5925182B2
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sample
workpiece
ion beam
guiding
deposited
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JP2014130145A5 (enExample
JP2014130145A (ja
Inventor
シュミット マイケル
シュミット マイケル
ブラックウッド ジェフ
ブラックウッド ジェフ
ストーン ステイシー
ストーン ステイシー
フーン リー サン
フーン リー サン
ケリー ロナルド
ケリー ロナルド
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FEI Co
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FEI Co
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Priority claimed from US14/081,947 external-priority patent/US8912490B2/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2013268368A 2012-12-31 2013-12-26 撮像のための試料調製方法 Active JP5925182B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261747512P 2012-12-31 2012-12-31
US61/747,512 2012-12-31
US14/081,947 2013-11-15
US14/081,947 US8912490B2 (en) 2011-06-03 2013-11-15 Method for preparing samples for imaging

Publications (3)

Publication Number Publication Date
JP2014130145A JP2014130145A (ja) 2014-07-10
JP2014130145A5 JP2014130145A5 (enExample) 2016-04-14
JP5925182B2 true JP5925182B2 (ja) 2016-05-25

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Family Applications (2)

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JP2013268368A Active JP5925182B2 (ja) 2012-12-31 2013-12-26 撮像のための試料調製方法
JP2015550848A Pending JP2016509669A (ja) 2012-12-31 2013-12-30 画像化用の試料を作製する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015550848A Pending JP2016509669A (ja) 2012-12-31 2013-12-30 画像化用の試料を作製する方法

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Country Link
US (1) US20150330877A1 (enExample)
EP (2) EP2749863A3 (enExample)
JP (2) JP5925182B2 (enExample)
CN (2) CN105103270A (enExample)
TW (1) TW201432242A (enExample)
WO (1) WO2014106200A2 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104685348B (zh) 2012-10-05 2017-12-12 Fei 公司 高纵横比结构分析
CN104822482B (zh) * 2012-10-05 2017-12-05 Fei 公司 用于倾斜铣削保护的体沉积
CN105200394A (zh) * 2014-06-24 2015-12-30 Fei公司 创建对称fib沉积的方法和系统
US20150369710A1 (en) * 2014-06-24 2015-12-24 Fei Company Method and System of Creating a Symmetrical FIB Deposition
KR102358551B1 (ko) * 2014-08-29 2022-02-04 가부시키가이샤 히다치 하이테크 사이언스 자동 시료편 제작 장치
CN104237567B (zh) * 2014-09-10 2016-05-11 武汉新芯集成电路制造有限公司 一种超薄平面透射电镜样品的制备方法
JP6584786B2 (ja) * 2015-02-13 2019-10-02 株式会社日立ハイテクノロジーズ プラズマイオン源および荷電粒子ビーム装置
CN105223383B (zh) * 2015-08-11 2018-08-28 上海华力微电子有限公司 一种平面tem样品的制备方法
CN105136539B (zh) * 2015-08-26 2019-05-03 上海华力微电子有限公司 一种制备tem芯片样品的方法
CN105300754B (zh) * 2015-09-11 2019-06-28 上海华力微电子有限公司 一种防止tem芯片样品破裂的方法
US9978586B2 (en) 2015-11-06 2018-05-22 Fei Company Method of material deposition
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
EP3249676B1 (en) 2016-05-27 2018-10-03 FEI Company Dual-beam charged-particle microscope with in situ deposition functionality
US10324049B2 (en) * 2017-02-15 2019-06-18 Saudi Arabian Oil Company Rock sample preparation method by using focused ion beam for minimizing curtain effect
JP7214262B2 (ja) * 2017-03-27 2023-01-30 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、試料加工方法
CN110678730A (zh) * 2017-04-20 2020-01-10 元素科学雷射公司 用于极快速信号清除的可调整样本底面
US10546719B2 (en) * 2017-06-02 2020-01-28 Fei Company Face-on, gas-assisted etching for plan-view lamellae preparation
DE102017212020B3 (de) * 2017-07-13 2018-05-30 Carl Zeiss Microscopy Gmbh Verfahren zur In-situ-Präparation und zum Transfer mikroskopischer Proben, Computerprogrammprodukt sowie mikroskopische Probe
CN108956669A (zh) * 2018-06-08 2018-12-07 浙江大学 一种金属燃料颗粒表面氧化层检测方法
CN110940689B (zh) * 2018-09-20 2022-06-21 无锡华润上华科技有限公司 SiC器件样品的制备方法及SiC器件的形貌分析方法
CN112868082B (zh) * 2018-11-12 2024-04-09 株式会社日立高新技术 图像形成方法以及图像形成系统
JP7192117B2 (ja) * 2018-11-22 2022-12-19 アプライド マテリアルズ インコーポレイテッド 基板上の限界寸法測定の方法、および基板上の電子デバイスを検査し、カッティングするための装置
US11440151B2 (en) * 2019-06-07 2022-09-13 Applied Materials Israel Ltd. Milling a multi-layered object
DE102019214939A1 (de) * 2019-09-27 2021-04-01 Carl Zeiss Microscopy Gmbh Verfahren zum Analysieren, Abbilden und/oder Bearbeiten eines Gebiets eines Objektsund Teilchenstrahlvorrichtung zum Ausführen des Verfahrens
US10903044B1 (en) * 2020-02-12 2021-01-26 Applied Materials Israel Ltd. Filling empty structures with deposition under high-energy SEM for uniform DE layering
CN111195777A (zh) * 2020-03-02 2020-05-26 河北工程大学 一种陶瓷颗粒增强金属基复合材料超快激光精密刻蚀加工方法
EP3922752B1 (en) * 2020-06-12 2025-09-03 Imec VZW A method for preparing a sample for transmission electron microscopy
CN112041671B (zh) * 2020-07-24 2023-10-20 长江存储科技有限责任公司 制备和分析薄膜的方法
GB202013591D0 (en) 2020-08-28 2020-10-14 Oxford Instr Nanotechnology Ltd Sample preparation and method aparatus
TWI753739B (zh) 2021-01-08 2022-01-21 閎康科技股份有限公司 物性分析方法、物性分析試片及其製備方法
US11501951B1 (en) 2021-05-14 2022-11-15 Applied Materials Israel Ltd. X-ray imaging in cross-section using un-cut lamella with background material
CN114942209A (zh) * 2021-09-23 2022-08-26 数岩科技股份有限公司 岩石的三维成像方法、装置、电子设备及存储介质
TWI903411B (zh) * 2023-03-07 2025-11-01 德商卡爾蔡司Ｓｍｔ有限公司 帶電粒子束成像的樣本製備
CN117007625A (zh) * 2023-09-28 2023-11-07 北京中科科仪股份有限公司 一种pn结的扫描电镜测试方法
CN119395064B (zh) * 2024-12-27 2025-04-18 北京特思迪半导体设备有限公司 半导体材料亚表面损伤层的检测方法
CN121123051B (zh) * 2025-11-07 2026-01-30 上海季丰技术有限公司 一种测量样件孔洞的方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0763064B2 (ja) * 1986-03-31 1995-07-05 株式会社日立製作所 Ｉｃ素子における配線接続方法
JP2595083B2 (ja) * 1988-06-08 1997-03-26 株式会社日立製作所 配線形成方法及びその装置
JPH0794512A (ja) * 1993-09-20 1995-04-07 Hitachi Ltd 配線形成方法及び装置
US6188068B1 (en) * 1997-06-16 2001-02-13 Frederick F. Shaapur Methods of examining a specimen and of preparing a specimen for transmission microscopic examination
US6039000A (en) 1998-02-11 2000-03-21 Micrion Corporation Focused particle beam systems and methods using a tilt column
JP2002167665A (ja) * 2000-11-30 2002-06-11 Sumitomo Heavy Ind Ltd 成膜装置及び方法
JP2004537758A (ja) * 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
US7053370B2 (en) * 2001-10-05 2006-05-30 Canon Kabushiki Kaisha Information acquisition apparatus, cross section evaluating apparatus, cross section evaluating method, and cross section working apparatus
JP2004164966A (ja) * 2002-11-12 2004-06-10 Seiko Instruments Inc 関連情報をコード化して書き込む機能を備えたｔｅｍ試料加工用集束イオンビーム装置
JP2004226079A (ja) * 2003-01-20 2004-08-12 Seiko Instruments Inc 表面あるいは断面加工観察方法及びその装置
US6958248B1 (en) * 2003-02-28 2005-10-25 Credence Systems Corporation Method and apparatus for the improvement of material/voltage contrast
JP4318962B2 (ja) * 2003-06-02 2009-08-26 エスアイアイ・ナノテクノロジー株式会社 薄膜加工における膜厚制御方法とそれを実行するシステム
US7611610B2 (en) * 2003-11-18 2009-11-03 Fei Company Method and apparatus for controlling topographical variation on a milled cross-section of a structure
US7442924B2 (en) 2005-02-23 2008-10-28 Fei, Company Repetitive circumferential milling for sample preparation
US7423263B2 (en) * 2006-06-23 2008-09-09 Fei Company Planar view sample preparation
JP5270558B2 (ja) * 2006-10-20 2013-08-21 エフ・イ−・アイ・カンパニー Ｓ／ｔｅｍのサンプルを作成する方法およびサンプル構造
US8835880B2 (en) * 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
JP5017059B2 (ja) * 2007-10-29 2012-09-05 エスアイアイ・ナノテクノロジー株式会社 試料作成装置および試料姿勢転換方法
JP2010230518A (ja) * 2009-03-27 2010-10-14 Toppan Printing Co Ltd 薄片試料作製方法
EP2402475A1 (en) * 2010-06-30 2012-01-04 Fei Company Beam-induced deposition at cryogenic temperatures
CN102401758A (zh) * 2010-09-17 2012-04-04 中芯国际集成电路制造(上海)有限公司 Tem样品制造方法
US8859963B2 (en) * 2011-06-03 2014-10-14 Fei Company Methods for preparing thin samples for TEM imaging

Also Published As

Publication number Publication date
WO2014106200A2 (en) 2014-07-03
JP2014130145A (ja) 2014-07-10
US20150330877A1 (en) 2015-11-19
CN105103270A (zh) 2015-11-25
EP2749863A3 (en) 2016-05-04
EP2939260A4 (en) 2016-01-20
CN103913363A (zh) 2014-07-09
EP2749863A2 (en) 2014-07-02
WO2014106200A3 (en) 2014-08-21
JP2016509669A (ja) 2016-03-31
TW201432242A (zh) 2014-08-16
EP2939260A2 (en) 2015-11-04

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