TW201432242A - 準備成像用之樣本的方法 - Google Patents

準備成像用之樣本的方法 Download PDF

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Publication number
TW201432242A
TW201432242A TW102149126A TW102149126A TW201432242A TW 201432242 A TW201432242 A TW 201432242A TW 102149126 A TW102149126 A TW 102149126A TW 102149126 A TW102149126 A TW 102149126A TW 201432242 A TW201432242 A TW 201432242A
Authority
TW
Taiwan
Prior art keywords
sample
ion beam
workpiece
directing
wall
Prior art date
Application number
TW102149126A
Other languages
English (en)
Chinese (zh)
Inventor
麥可 西米德特
傑佛瑞 布雷克伍德
史黛西 史東
李相勳
羅納達 凱力
萃文 藍汀
Original Assignee
Fei公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/081,947 external-priority patent/US8912490B2/en
Application filed by Fei公司 filed Critical Fei公司
Publication of TW201432242A publication Critical patent/TW201432242A/zh

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW102149126A 2012-12-31 2013-12-30 準備成像用之樣本的方法 TW201432242A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261747512P 2012-12-31 2012-12-31
US14/081,947 US8912490B2 (en) 2011-06-03 2013-11-15 Method for preparing samples for imaging
EP13197357.0A EP2749863A3 (en) 2012-12-31 2013-12-16 Method for preparing samples for imaging

Publications (1)

Publication Number Publication Date
TW201432242A true TW201432242A (zh) 2014-08-16

Family

ID=49998017

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102149126A TW201432242A (zh) 2012-12-31 2013-12-30 準備成像用之樣本的方法

Country Status (6)

Country Link
US (1) US20150330877A1 (enExample)
EP (2) EP2749863A3 (enExample)
JP (2) JP5925182B2 (enExample)
CN (2) CN105103270A (enExample)
TW (1) TW201432242A (enExample)
WO (1) WO2014106200A2 (enExample)

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US11440151B2 (en) * 2019-06-07 2022-09-13 Applied Materials Israel Ltd. Milling a multi-layered object
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US10903044B1 (en) * 2020-02-12 2021-01-26 Applied Materials Israel Ltd. Filling empty structures with deposition under high-energy SEM for uniform DE layering
CN111195777A (zh) * 2020-03-02 2020-05-26 河北工程大学 一种陶瓷颗粒增强金属基复合材料超快激光精密刻蚀加工方法
EP3922752B1 (en) * 2020-06-12 2025-09-03 Imec VZW A method for preparing a sample for transmission electron microscopy
CN112041671B (zh) * 2020-07-24 2023-10-20 长江存储科技有限责任公司 制备和分析薄膜的方法
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TWI753739B (zh) 2021-01-08 2022-01-21 閎康科技股份有限公司 物性分析方法、物性分析試片及其製備方法
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CN117007625A (zh) * 2023-09-28 2023-11-07 北京中科科仪股份有限公司 一种pn结的扫描电镜测试方法
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CN121123051B (zh) * 2025-11-07 2026-01-30 上海季丰技术有限公司 一种测量样件孔洞的方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI731467B (zh) * 2018-11-12 2021-06-21 日商日立全球先端科技股份有限公司 影像形成方法、影像形成系統及離子研磨裝置

Also Published As

Publication number Publication date
WO2014106200A2 (en) 2014-07-03
JP2014130145A (ja) 2014-07-10
US20150330877A1 (en) 2015-11-19
CN105103270A (zh) 2015-11-25
EP2749863A3 (en) 2016-05-04
EP2939260A4 (en) 2016-01-20
CN103913363A (zh) 2014-07-09
EP2749863A2 (en) 2014-07-02
JP5925182B2 (ja) 2016-05-25
WO2014106200A3 (en) 2014-08-21
JP2016509669A (ja) 2016-03-31
EP2939260A2 (en) 2015-11-04

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