CN105098042A - 在互连结构中封装只具有顶侧连接的光子构建块 - Google Patents
在互连结构中封装只具有顶侧连接的光子构建块 Download PDFInfo
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- CN105098042A CN105098042A CN201510415080.1A CN201510415080A CN105098042A CN 105098042 A CN105098042 A CN 105098042A CN 201510415080 A CN201510415080 A CN 201510415080A CN 105098042 A CN105098042 A CN 105098042A
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- 238000004806 packaging method and process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 150
- 238000000034 method Methods 0.000 claims abstract description 28
- 230000005611 electricity Effects 0.000 claims description 8
- 239000004020 conductor Substances 0.000 abstract description 39
- 229910000679 solder Inorganic materials 0.000 abstract description 29
- 239000002184 metal Substances 0.000 description 30
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000000463 material Substances 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 17
- 239000003292 glue Substances 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 229920000106 Liquid crystal polymer Polymers 0.000 description 5
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 5
- 238000003287 bathing Methods 0.000 description 5
- 238000010992 reflux Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 238000002791 soaking Methods 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 229920001169 thermoplastic Polymers 0.000 description 4
- 239000004416 thermosoftening plastic Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- 229960001866 silicon dioxide Drugs 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 241000272168 Laridae Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- -1 silicon lipid Chemical class 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/021—Components thermally connected to metal substrates or heat-sinks by insert mounting
-
- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83447—Copper [Cu] as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85447—Copper (Cu) as principal constituent
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01L2924/06—Polymers
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- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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- H01L2924/12—Passive devices, e.g. 2 terminal devices
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- H01L2924/12041—LED
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Abstract
标准化的光子构建块被用于制成分立的光发射器以及阵列产品。每个光子构建块具有被安装在基板上的一个或多个LED芯片。在基板的顶表面与底表面之间没有电导体经过。光子构建块由被附接到散热器的互连结构支撑。每个光子构建块的基板的上表面上的连接焊盘被附接到被置于互连结构的唇缘的下侧上的接触焊盘。在焊料回流过程中,光子构建块在互连结构内自对准。互连结构上的导体通过接触焊盘和连接焊盘被电耦合到光子构建块中的LED裸片。互连结构的底表面与光子构建块的基板的底表面共面。
Description
分案申请说明
本申请是申请日为2012年1月9日、于2013年8月20日进入国家阶段的申请号为201280009734.5、名称为“在互连结构中封装只具有顶侧连接的光子构建块”的中国发明专利申请的分案申请。
技术领域
本发明总体涉及用于发光二极管的封装,并且尤其涉及可以作为发射器被单独封装或者与其它光子构建块一起作为发射器阵列被封装的光子构建块。
背景技术
发光二极管(LED)是将电能转化为光的固态设备。当电压被应用于相反掺杂层上时,光从被夹在该相反掺杂层之间的有源半导体材料层被发射。为了使用LED芯片,芯片通常被包封(enclose)在封装内,该封装汇集光并且保护芯片不被损坏。LED封装通常包括在底部上、用于将LED封装电连接到外部电路的接触焊盘。常规地,LED芯片被设计为作为分立的光发射器被封装或者与一组LED芯片一起以阵列方式被封装。分立的光发射器的LED芯片通常被安装在载体基板上(carriersubstrate),载体基板转而被安装在印刷电路板上。然而,阵列的LED芯片通常被直接安装在印刷电路板上,而不使用载体基板。
阵列产品常规地不是使用作为构建块的分立的光发射器来制成的。分立的光发射器的载体基板通常被认为是不必要地占用了阵列下方的印刷电路板上的空间。此外,对于每个新的阵列设计,穿过分立的光发射器的载体基板的导电通孔过孔(through-holevia)必须被重新配置以正确地连接到印刷电路板上的接触焊盘。因而,没有具有特定的通孔过孔的组合的载体可以被用作标准构建块。这个关于分立发射器中的通孔过孔的问题可以通过将LED芯片电连接到载体基板的顶侧上的迹线和接触焊盘来解决。但是通过将LED芯片连接到载体基板的顶侧上的焊盘来消除通孔过孔会产生新的问题,即如何将焊盘连接到电源,因为载体基板不再被电耦合到下面的印刷电路板。
图1(现有技术)示出了现有的阵列产品10,其中具有26个LED芯片的阵列被电连接到载体基板12的顶侧上的焊盘11。阵列产品10是北卡罗莱纳,达勒姆的Cree,Inc.所制造的MP-LEasyWhite产品。在图1中,载体基板12被安装在金属盘13上,与在印刷电路板上相反。载体基板12被使用导热胶14附接到金属盘13。阵列产品10通过将正极电源引线15和负极电源引线(powercord)16的各自线路手工焊接到焊盘11来不雅观地连接到电源。阵列产品10没有便于将载体基板12顶侧上的焊盘11连接到下面的电路板或电路盘中的电源的特征。而且,阵列产品10没有被配置为合并成一组阵列产品。
寻求一种方法以用于使用被安装在载体基板上的一个或多个LED芯片作为标准化的构建块来制造分立的光发射器以及具有安装了LED的多个基板的阵列产品。
发明内容
本发明的实施方式提供了一种器件,包括:被置于基板的表面上的发光二极管(LED)裸片,所述LED裸片被电连接到被置于所述基板的所述表面上的连接焊盘;包括接触焊盘和外部电连接器的互连结构;其中所述连接焊盘和所述接触焊盘固定地并且电地彼此连接,并且其中到所述LED的外部电连接通过在所述互连结构上的所述外部电连接器来做出。
可选地,在该器件中,所述互连结构的底表面和所述基板的底表面基本上共面。
可选地,在该器件中,所述基板没有任何用于将所述基板机械地附接到散热器的特征。
可选地,在该器件中,所述基板没有用于将所述基板机械地附接到散热器的孔或鼠啮。
可选地,在该器件中,所述基板是封闭的基板。
可选地,在该器件中,所述LED在所述基板的侧边界的3mm内。
可选地,在该器件中,所述外部电连接器被配置为连接到外部电源。
可选地,在该器件中:所述互连结构还包括用于将所述互连结构机械地附接到外部部件的外部机械连接器,并且所述机械连接器和所述电连接器凹进到所述互连结构中。
可选地,在该器件中:所述互连结构包括袋部;所述基板被置于所述袋部内;并且所述互连结构的底表面与所述基板的底表面基本上共面。
可选地,在该器件中:所述互连结构包括袋部;所述基板被置于所述袋部内;并且所述LED包括延伸到所述互连结构的开口中并且与互连结构的顶表面基本上共面的发光表面。
可选地,在该器件中,所述基板包括具有矩形形状的侧边界。
本发明的实施方式提供了一种方法,包括:将发光二极管(LED)裸片置于基板的表面上;在所述基板的所述表面上制作连接焊盘;将所述LED裸片电连接到所述连接焊盘;连接在所述基板上的所述连接焊盘与被置于互连结构上的接触焊盘;并且其中所述连接焊盘和所述接触焊盘被固定地并且电地连接并且到所述LED的外部电连接通过被置于所述互连结构上的外部电连接器来做出。
可选地,在该方法中,所述基板和所述互连结构被连接以使得所述互连结构的底表面和所述基板的底表面基本上共面。
可选地,该方法还包括经由在所述互连结构上的连接将所述衬底和所述互连结构机械地附接到散热器。
可选地,在该方法中,将所述LED置于所述衬底的所述表面上包括将所述LED置于所述基板的侧边界的3mm内。
标准化的光子构建块被用于制成分立的具有一个构建块的光发射器以及具有多个构建块的阵列产品两者。每个光子构建块具有被安装在载体基板上的一个或多个LED芯片。在基板的顶表面与底表面之间没有电导体经过。光子构建块由被附接到散热器的互连结构支撑。互连结构的示例包括模塑互连器件(MID)、引线框架器件或印刷电路板。
每个光子构建块的基板的顶表面上的连接焊盘(landingpad)使用焊料或胶黏剂被附接到被置于互连结构的唇缘的下侧上的接触焊盘(contactpad)。该唇缘在基板的侧边界内在基板之上延伸。在焊料回流或SAC回流过程中,光子构建块在互连结构内自对准。连接焊盘的熔化的SAC或焊料合金使镀有金属的接触焊盘变湿,并且熔化的合金的表面张力拉动在接触焊盘下面的连接焊盘。互连结构上的导体通过接触焊盘和连接焊盘被电耦合到光子构建块中的LED裸片。互连结构的底表面与光子构建块的基板的底表面共面。
在阵列产品中,多个光子构建块的基板被互连结构支撑。所有光子构建块的基板具有基本相同的尺寸。在散热器的上表面放置热界面材料,并且互连结构的底表面接触热界面材料。互连结构通过穿过互连结构中的通孔的螺栓被固定到散热器上。
一种使用由互连结构支撑的相同的标准化光子构建块来制造分立的光发射器以及阵列产品两者的方法。该方法包括将LED裸片安装在载体基板上的步骤,从载体基板的顶表面到其底表面,没有电导体经过。基板的顶表面上的连接焊盘被放置在接触焊盘的下面并且与接触焊盘相邻放置,所述接触焊盘被置于互连结构的唇缘的下侧上。为了将连接焊盘放置在接触焊盘的下面,互连结构的唇缘被置于基板的顶表面之上并且在基板的侧边界内。
通过将连接焊盘接合(bond)到接触焊盘,互连结构上或者互连结构中的导体被电连接到光子构建块上的LED裸片。连接焊盘可以通过加热连接焊盘的金属合金被接合到接触焊盘以使得连接焊盘与金属接触焊盘对准。或者,连接焊盘可以使用各向异性导电胶膜(ACF)技术被接合到接触焊盘。对于关于各向异性(不对称)导电胶的更多细节,参见2010年11月8日提交的名称为“LED-BasedLightSourceUtilizingAsymmetricConductors”的美国专利申请No.12/941,799,该美国专利申请通过引用被合并于此。在连接焊盘与接触焊盘对准并且被接合到接触焊盘之后,基板的底表面与互连结构的底表面基本共面。
当该方法被用于制造具有多个光子构建块的阵列产品时,在第二光子构建块的基板的顶表面之上放置互连结构的第二唇缘,并且第二基板上的第二连接焊盘被放置在互连结构的唇缘下面的第二接触焊盘下面并且与第二接触焊盘相邻放置。第二光子构建块的第二基板具有与第一光子构建块的基板的尺寸基本相同的尺寸。通过将第二连接焊盘接合到第二接触焊盘,互连结构的第二导体被电连接到第二光子构建块上的第二LED裸片。在第二连接焊盘被接合到第二接触焊盘之后,第二光子构建块的基板的底表面与互连结构的底表面基本共面。
然后,散热器的上表面之上放置热界面材料在。互连结构的底表面以及光子构建块的基板的底表面被置于热界面材料之上。
一种新型发光器件包括被置于基板上的LED裸片,所述基板不包括在所述基板的顶表面与底表面之间的电导体。所述器件还包括用于将LED裸片电耦合到位于所述基板的侧边界外部的导体的装置。该装置接触被置于基板的顶表面上的连接焊盘。当加热连接焊盘时,连接焊盘使基板与该装置上的接触焊盘对准。所述装置具有与基板的底表面共面的底表面。
更多的细节、实施例和技术在下面的详细描述中被描述。该发明内容部分不意在限定本发明。本发明由权利要求限定。
附图说明
附图图示了本发明的实施例,其中相同的标号表示相同的组件。
图1(现有技术)是现有阵列产品的透视图,其中多个LED芯片被电连接到载体基板的顶侧上的焊盘。
图2是由互连结构支撑的新颖的光子构建块的截面图。
图3是如图2中所示被连接到连接焊盘的接触焊盘的更详细的视图。
图4A是通过接触焊盘被耦合到基板上的连接焊盘的互连结构上的导体的截面图。
图4B是图4A的导体通过中空的过孔(via)到达接触焊盘的路径的透视图。
图4C是通过并且完全覆盖中空过孔的内表面的图4A的导体的透视图。
图5是在互连结构的唇缘的圆形边缘周围通过的图4A的导体的截面图。
图6示出了基板上的连接焊盘,该连接焊盘通过各向异性导电胶(ACF)被接合到位于互连结构的唇缘的下侧上的接触焊盘。
图7示出了具有金属箔层的引线框架互连结构,所述金属箔层用作互连结构的导体并且用作与基板上的连接焊盘接合的接触焊盘两者。
图8示出了由具有金属层的印刷电路板制成的互连结构,所述金属层用作互连结构的导体并且用作与基板上的连接焊盘接合的接触焊盘。
图9是包括被四个连接焊盘环绕的四个LED裸片的光子构建块的顶视图。
图10是包括被两个连接焊盘环绕的四个LED裸片的光子构建块的另一实现方式的顶视图。
图11A是被构建为阵列产品的互连结构中的两个光子构建块的顶视图。
图11B是沿图11A中所示的阵列产品的线B-B的截面图。
图11C是沿图11A中所示的阵列产品的线C-C的截面图。
图12A是在图11A中所示的基板的连接焊盘与互连结构的接触焊盘之间的连接的更详细的视图。
图12B示出了下面没有连接焊盘的图12A的接触焊盘。
图13是被构建为阵列产品的互连结构中的四个光子构建块的透视图。
图14是用于使用相同的标准化光子构建块制造分立的光发射器以及阵列产品两者的步骤的流程图。
具体实施方式
现在将详细参考本发明的一些实施例,这些实施例的示例在附图中被图示。
图2是由互连结构21支撑的新型光子构建块20的截面图。光子构建块20包括其上被安装有LED裸片23的基板22。基板22是非导电性陶瓷。在另一实现方式中,基板22是晶体硅。连接焊盘24被置于基板22的顶表面25上。从基板22的顶表面25到基板22的底表面26,没有电导体经过。LED裸片23仅通过连接焊盘24被电耦合到电源。热界面材料被置于LED裸片23与基板22之间。第一层热界面材料(TIM)27由与连接焊盘24相同的材料制成并且在相同的过程中被沉积。在一种实现方式中,焊盘24和第一层27是由Cu-Ni-Au合金或Cu-Ni-Ag合金制成的迹线。第二层热界面材料28被沉积在第一层27上。在一种实现方式中,第二层28是填充银的环氧树脂。LED裸片23通过第二层28和第二层27被接合到基板22的顶表面25上。
LED裸片23通过接合线29被电连接到连接焊盘24。诸如磷之类的波长转换材料的薄共形层(conformallayer)被形成在LED裸片23之上。然后,诸如硅胶之类的透明树脂包封从基板22的顶表面25的一侧上的连接焊盘24的大约中间位置到顶表面25的相对侧上的连接焊盘24的大约中间位置被包覆成型在LED裸片23之上和接合线29之上。硅胶形成透镜30的形状。光子构建块20包括基板22、连接焊盘24以及透镜30所包封的所有部分。
互连结构21通过连接焊盘24支撑光子构建块20。连接焊盘24被电和机械地连接到被置于互连结构21的唇缘的下侧上的接触焊盘31。在一种实现方式中,连接焊盘24通过焊膏(solderpaste)被附接到接触焊盘31。焊膏例如SAC合金,例如SAC305(96.5%Sn,3.0%Ag,0.5%Cu)。在另一实现方式中,连接焊盘24通过胶黏剂(adhesive)被附接到接触焊盘31。胶黏剂例如与各向异性导电薄膜(ACF)技术相关联的各向异性导电胶。在图2的实施例中,连接焊盘通过焊料48被电和机械地连接到接触焊盘31。
在图2的实施例中,接触焊盘31通过通孔过孔34被电连接到互连结构21的顶表面33上的导电迹线32。因而,每个导电迹线32通过过孔34、接触焊盘31、焊料48、连接焊盘24和接合线29被电连接到LED裸片23。互连结构21具有与基板22的底表面26基本共面的底表面35。
光子构建块20和互连结构21通过第三层热界面材料(TIM)36被附接到散热器37。在一种实现方式中,第三层热界面材料36是导热胶。在另一实现方式中,第三层36由导热硅脂(thermalgrease)制成,并且互连结构21通过螺栓38被附接到散热器37。底表面26和35自完全共面的任何小的偏离通过诸如导热硅脂之类的热界面材料的厚度来补偿。螺栓38将互连结构21固定在散热器37之上,并且光子构建块20通过连接焊盘24与接触焊盘31之间的连接被固定到位。因而,基板22通过第三层TIM36被热耦合到散热器37。在一种实现方式中,基板22的底表面26不被直接连接到散热器37,而是“漂浮”在导热硅脂层36中。光子构建块30仅通过连接焊盘24与接触焊盘31之间的接合被机械连接到散热器37。相反的是,现有技术的阵列产品10的载体基板12仅通过将基板12的底表面粘接或焊接到散热器上而被附接到散热器。
与传统的分立光发射器相比,印刷电路板(PCB)和一层TIM已从新型光子构建块20下面被去除。在传统的分立光发射器中,载体基板位于金属核心PCB上的TIM层之上,所述金属核心PCB又位于散热器上的另一TIM层之上。使用新型光子构建块来制造阵列产品比使用传统的分立光发射器制造阵列产品要更经济,因为金属核心PCB和附加的TIM层的成本被节省下来。此外,与通过传统分立光发射器的附加MCPCB和TIM层相比,LED裸片所产生的热从载体基板通过一个TIM层被更高效地直接传送到散热器。
在另一实施例中,光子构建块20和互连结构21没有被直接附接到第三TIM层36之上的散热器37。相反,均热器(thermalspreader)被置于散热器37与光子构建块20之间。然后,光子构建块20和互连结构21通过第三TIM层36被附接到均热器。均热器例如均热板(vaporchamber)。
图3更详细地示出了图2的接触焊盘31中的一个接触焊盘以及与该接触焊盘相连接的连接焊盘24。接触焊盘31是互连结构上的金属迹线。在一种实现方式中,互连结构21是模塑互连器件(MID)。MID21是通过将诸如液晶聚合物(LCP)之类的金属化的高温热塑性材料诸如模具中而生产的三维电路载体。激光器将迹线的路径刻写在MID21的表面上。在激光束轰击(oblate)热塑性材料处,热塑性材料中的金属添加物形成非常细的导体路径。导体路径上的金属颗粒形成用于后续金属化的核心。金属化浴池(metallizationbath)被用于在导体路径上形成铜、镍和/或金迹线的连续层。例如,当被轰击的热塑性材料被置于铜浴池中时,一层铜形成在导体路径上。任何激光器可以轰击MID21的表面的地方,三维电路迹线可以快速地被形成。
在激光器轰击成焊盘的形状以后,接触焊盘31被形成在MID21的唇缘39的下侧上。金属迹线32也按与接触焊盘31被形成的方式相同的方式被形成在互连结构21的顶表面33上。或者激光器被调配以使得激光束可以被引至顶表面33以及唇缘39的下侧两者,或者两个激光器可以被使用。在图3的实现方式中,在迹线和焊盘被形成之前,通孔过孔34被填充有金属。金属化浴池将迹线32和接触焊盘31镀在金属过孔34的末端之上。
通过在焊盘之间回流焊料合金来在接触焊盘31与连接焊盘24之间做出电和机械连接。例如SAC回流过程可以在连接焊盘24的边缘处镀有Sn-Ag-Cu焊料合金的地方被执行。当SAC焊料被熔化时,焊料使接触焊盘31的金属变湿。然后,熔化的SAC合金的表面张力将连接焊盘24拉至接触焊盘31下面。然后,当SAC合金冷却且固化时,在连接焊盘24与接触焊盘31之间形成接合。
图4A示出了关于MID21上的金属迹线40如何被电耦合到基板22上的连接焊盘24的另一实现方式。代替图3中的填充金属的过孔34,图4A的MID21包括中空的锥形过孔41。中空过孔41使用在形成模塑互连器件21的成型工艺中的锥形塞被形成。激光器轰击穿过顶表面33、围绕过孔40的内表面、然后在唇缘39的下侧上的导体路径以形成接触焊盘31的形状。然后,导体路径和焊盘形状在金属化浴池中被镀上金属。图4B更详细地示出了激光器的导体路径。导体路径可以比激光器的宽度宽很多。激光器可以做出很多通路来创建很宽的导体路径,例如图4C中所示的一个通路。在图4C中,中空过孔41的整个部分呈锥形的内表面被轰击并且将在金属化步骤中被镀上金属。
图5示出了关于MID21上的金属迹线42如何被电耦合到基板22上的连接焊盘24的另一实现方式。MID21的唇缘39设置有圆形边缘。激光器制成穿过顶表面33、围绕圆形边缘、然后在唇缘39的下侧上的连续导体路径。
图6示出了不涉及焊料的将接触焊盘31电和机械地耦合到连接焊盘24的一种替代方式。在图6中,各向异性导电胶被用于将接触焊盘31连接到连接焊盘24,代替如图3中所示使用焊料回流形成的接合。因为焊料没有被使用,所以光子构建块20不在互连结构21中进行自对准,而是必须在胶黏剂固化之前被准确地定位。各向异性导电胶薄膜(ACF)技术涉及被分散在胶黏剂中的导电球。例如,被涂覆Au的聚合物球或者被填充Ni的球被分散在环氧树脂胶黏剂中。然后,被电耦合的表面被一起按压成球的直径。然后,胶黏剂例如通过加热被固化。在其中球接触两个表面的区域中,电接触被形成。各向异性导电胶在其中球仍然被分散在固化的胶中的那些区域中是不导电的。在图6中,各向异性导电胶将焊盘31、唇缘39的下侧和MID21的整个侧面机械地连接到连接焊盘24和基板22的侧面。然而,电连接只在接触焊盘31和连接焊盘24中被一起按压到导电球的直径以内的那些区域之间被形成。
图7示出了关于互连结构21上的导体如何使用焊料被电耦合到基板22上的连接焊盘24的另一实现方式。图7的互连结构是引线框架器件,而不是模塑互连器件。金属箔44按照分立光发射器或阵列产品的封装所需要的导体、引线和“鸥翼(gullwings)”的形式被压印。然后,引线框架结构21通过在被压印的金属箔44周围注塑成型液晶聚合物(LCP)45而被制成。金属箔既用作导体44又用作接触焊盘31。在唇缘39下面的金属箔的端部可以按照具有与连接焊盘24的形状相对应的形状的接触焊盘的形状被压印以便于焊料回流过程期间的自对准。
图8示出了被使用焊料电耦合到基板22上的连接焊盘24的互连结构21中的导体46的另一实现方式。图8的互连结构21是印刷电路板(PCB)。例如,互连结构21是由具有环氧树脂粘合剂的玻璃纤维纺织物46制成的FR-4印刷电路板。FR-4PCB21具有若干金属层。金属层47中的一个既用作导体又用作接触焊盘31。唇缘39下面的金属层47的端部可以按照与连接焊盘24的形状相对应的形状被形成以便于焊料回流过程期间的自对准。
图9是包括四个LED裸片51-54的光子构建块50的顶视图。相同的材料被用于制造四个连接焊盘55-58以及四个LED下面的第一TIM层27。第二层热界面材料28被沉积在每个LED裸片下面的第一层27上,并且在图9的视图中不可见。LED裸片51和54被串联地电连接在连接焊盘55和58之间。两个接合线将每个LED裸片连接到连接焊盘并且连接到另一LED裸片。例如,接合线59-60将LED裸片51连接到连接焊盘55。虚线圈指示硅胶透镜30所包封的基板22上的组件的范围。透镜30延伸到大约连接焊盘55-58的中间部分。透镜30的直径大约为2x2的LED裸片阵列的每一侧的长度的两倍以允许所发射的光的大部分到达在光从透镜逸出所需要的临界角度内的透镜30的表面。
光子构建块50可以被用于制成具有单个光子构建块的分立光发射器以及具有多个光子构建块的阵列产品两者。互连结构21可以很容易地被塑型或配置以将光子构建块50合并成多个不同的分立光发射器产品。螺栓38通过其将互连结构21附接到散热器37的螺栓孔可以很容易地被重新设置,而不改变光子构建块50的设计。并且被电耦合到LED裸片的导体可以很容易地使用激光器被重塑以将导电路径刻写在模塑互连器件的表面之上。因而,新型发射器不需要每次在使用光子构建块50制成新的光发射产品时都被测试和检查是否合格。
图10是只有围绕四个LED裸片51-54的两个连接焊盘62-63的光子构建块61的顶视图。与图9的光子构建块50一样,连接焊盘62-63和四个LED下面的第一TIM层27由相同的材料制成,例如Cu-Ni-Au合金或Cu-Ni-Ag合金。连接焊盘62-63具有延伸到基板22的四个角的点。在SAC回流步骤中,与连接焊盘55-58相比向基板22的角延伸得更远的焊料合金可以更准确地在互连结构21的接触焊盘下面对准基板22。然而,连接焊盘62-63在接触焊盘下面的较小的表面面积导致连接焊盘与接触焊盘之间的较弱的机械连接。
图11A是与另一光子构建块64一起被构建成阵列产品的图9的光子构建块50的顶视图。模塑互连器件65将光子构建块50和64固定在1x2的阵列中。MID65的区域用交叉影线来表示。MID65具有在光子构建块50和64的角之上延伸并且将这些角固定到位的六个唇缘。例如MID65的唇缘39在基板22的右上角之上延伸,并且唇缘39的下侧上的接触焊盘使用焊料或胶黏剂被电和机械地连接到连接焊盘55的一部分上。MID65还具有在光子构建块50的左上角以及光子构建块64的右上角两者之上延伸的另一唇缘66。唇缘66下面的分开的接触焊盘被接合到光子构建块50的连接焊盘56以及光子构建块64的连接焊盘67。MID65具有供螺栓38将阵列产品附接到散热器37的四个孔68。
图11B是沿图11A中所示的1x2阵列产品的线B-B的截面图。图11B示出了唇缘39的下侧上的接触焊盘31如何被电和机械地连接到连接焊盘55的一部分上。图11B还示出了唇缘66下面的接触焊盘中与连接焊盘56和67接合的部分。图11C是沿图11A中所示的1x2阵列产品的线C-C的截面图。MID65的接触焊盘在图11C的截面中是看不到的。
图12A-B更详细地图示了图11A的连接焊盘55与接触焊盘31之间的连接。接触焊盘31具有与下面的连接焊盘55的角相同的轮廓形状。焊料回流过程可以使用在上面的接触焊盘被执行,与下面的连接焊盘上的焊料对准,或者该过程可以反过来。图11B的结构可以被反过来以使得连接焊盘在接触焊盘的上部并且与接触焊盘上的被熔化的焊料对准。
在SAC回流过程中,当连接焊盘55上的SAC焊料被熔化时,焊料使接触焊盘31的金属变湿。然后,被熔化的SAC焊料的表面张力拉动在具有相同形状的连接焊盘55的部分之上的接触焊盘31。因而,在基板22的角上的四个连接焊盘分别朝向具有相同形状的接触焊盘被拉动并且在MID65的框架内对准光子构建块55。当SAC焊料冷却且固化时,在连接焊盘与接触焊盘之间形成接合。连接焊盘与接触焊盘之间的接合线使光子构建块固定到位以使得即使当阵列产品未被附接到散热器时,基板的底表面与MID65的底表面35也基本共面。阵列产品可以在不被附接到任何热沉(例如散热器)的情况下被运输。连接焊盘与接触焊盘之间的接合足够坚固来保持阵列产品的机械完整性,尽管在运输过程中常常会遇到振动和磕碰。
图12A还示出了被电耦合到第一LED裸片51的在MID65的顶表面上的导体69。导体69是通过对激光器所轰击的路径镀金属而形成的金属迹线。金属迹线69通过实心金属过孔70、接触焊盘31、焊料48或ACF胶黏剂、连接焊盘55和接合线59-60被电耦合到LED裸片51。虚线表示硅胶透镜30的广度。
图12B示出了下面没有光子构建块50的连接焊盘55的图12A的接触焊盘31。围绕接触焊盘31的三角形交叉影线区域是在光子构建块50的基板22的右上角之上延伸的唇缘39。图12B还示出了在基板22的右下角之上延伸的MID65的唇缘71。用格子图案显示的MID65的区域从互连结构的顶表面33到底表面35被填充有液晶聚合物。
图13是与三个其它光子构建块一起被构建成阵列产品的图9的光子构建块50的透视图。模塑互连器件72将光子构建块固定在2x2阵列中。互连结构72包括在光子构建块之间的桥,这些桥支撑中心岛73,在中心岛73下面,接触焊盘附接到四个光子构建块的内部连接焊盘。由于MID72在模塑过程中被形成,所以非平面的表面很容易被制成。MID72具有被涂覆有诸如金属薄膜之类的反射材料的围绕光子构建块的曲线壁74。曲线壁可以被塑形以实现对从光子构建块发射的光的抛物线反射。连接到接触焊盘(图13中未被示出)的导体使用激光器被刻绘在曲线壁之上,然后在金属化浴池中被镀上金属。这些导体使用如图3-4中所示的通孔过孔或中空过孔被连接到接触焊盘。虽然图13示出了由互连结构支撑的2x2的光子构建块阵列,但是具有其它尺寸的阵列也可以使用光子构建块之间的桥按类似的方式被制成。
图14是图示了使用具有被安装在载体基板上的一个或多个LED芯片的相同的标准化光子构建块制造分立光发射器和阵列产品两者的方法的步骤75-81的流程图。该方法可以被用于按照任何配置(例如并联或串联)连接光子构建块,以实现所得到的阵列产品的所希望的光输出的功率消耗。该方法很容易将光子构建块电、机械和热地连接到最终的发光产品的其它结构上。与电源的电连接可以很容易地被配置。光子构建块的取向可以很容易地与发光产品的反射器和透镜对准。将互连结构机械地连接到发光产品的螺栓的位置可以很容易地在不改变光子构建块的情况下被重新配置。并且互连结构可以很容易地被配置为与多个散热器相连接。
在第一步75中,发光二极管裸片51被安装在第一光子构建块50的载体基板22上。基板22从其顶表面25到其底表面26没有电导体经过。LED裸片51被使用第一TIM层27和第二TIM层28附接到基板22。基板22的顶表面25上的连接焊盘55与第一TIM层27在相同的工艺过程中用相同的材料制成。
在步骤76中,连接焊盘55被置于接触焊盘31下面并且与之相邻放置,所述接触焊盘31被置于互连结构65的唇缘39的下侧上。这样,唇缘39被置于基板22的顶表面55之上并且在基板22的侧边界内。在步骤76结束时,光子构建块被置于互连结构65内。
在步骤77中,互连结构65的导体32通过将连接焊盘55与接触焊盘31接合而电连接到LED裸片51。焊盘通过焊料或者ACF胶黏剂被接合。当使用焊料时,连接焊盘55通过以下方式被接合到接触焊盘31,所述方式既加热连接焊盘55上的金属合金以使得连接焊盘与金属接触焊盘对准。当使用各向异性导电胶薄膜(ACF)技术来接合焊盘时,光子构建块被准确地定位在互连结构65内,并且当ACF胶通过加热被愈合时,连接焊盘55被接合到接触焊盘31。在连接焊盘55与接触焊盘31对准并与之接合之后,基板22的底表面26与互连结构65的底表面35基本共面。
在步骤78中,当图14的方法被用于制成阵列产品时,互连结构65的第二唇缘66被置于第二基板的顶表面之上,并且第二连接焊盘67被置于被附接到唇缘66的下侧的第二接触焊盘的下面并且与之相邻放置。第二基板是第二光子构建块64的一部分并且具有与第一基板22的尺寸基本相同的尺寸。被置于第二基板上的第二LED裸片具有与第一基板22上的LED裸片51的尺寸基本相同的尺寸。
在步骤79中,当图14的方法被用于制造阵列产品时,互连结构65的第二导体通过将第二连接焊盘67接合到被附接到唇缘66的下侧的第二接触焊盘而被电连接到被置于第二基板上的第二LED裸片。例如,连接焊盘67可以使用SAC回流过程或者利用各向异性导电胶被接合到第二接触焊盘。在第二唇缘66被置于第二基板的顶表面之上并且连接焊盘67被接合到唇缘66的下侧上的接触焊盘之后,第二基板的底表面与互连结构65的底表面35基本共面。
在步骤80中,热界面材料36被置于散热器37的上表面之上。除了在基板22下面的区域以及直接围绕基板的区域以外,散热器37的上表面不需要是平面。例如,散热器37的上表面可以是灯具的大部分呈曲线状的表面。同样,基板22的底表面26和互连结构65的底表面35除了紧邻基板22的区域以外不需要共面。
在步骤81中,基板22和互连结构65被置于热界面材料36之上以使得热界面材料36接触基板22的底表面26和互连结构65的底表面35两者。当图14的方法被用于制造阵列产品时,光子构建块64的第二基板也被置于热界面材料36之上以使得热界面材料36接触第二基板的底表面。图14的方法还可以被用于制造具有两个以上光子构建块的阵列产品,例如图13中所示的阵列产品。
虽然上面为了教导的目的描述了某些特定实施例,但是本专利文档的教导具有广泛的可应用性并且不被局限于上述的特定实施例。因此,对所描述的实施例的各个特征的各种修改、适配和组合可以被实现,而不脱离如权利要求中所限定的本发明的范围。
Claims (15)
1.一种器件,包括:
被置于基板的表面上的发光二极管(LED)裸片,所述LED裸片被电连接到被置于所述基板的所述表面上的连接焊盘;
包括接触焊盘和外部电连接器的互连结构;
其中所述连接焊盘和所述接触焊盘固定地并且电地彼此连接,并且其中到所述LED的外部电连接通过在所述互连结构上的所述外部电连接器来做出。
2.根据权利要求1所述的器件,其中所述互连结构的底表面和所述基板的底表面基本上共面。
3.根据权利要求1所述的器件,其中所述基板没有任何用于将所述基板机械地附接到散热器的特征。
4.根据权利要求1所述的器件,其中所述基板没有用于将所述基板机械地附接到散热器的孔或鼠啮。
5.根据权利要求1所述的器件,其中所述基板是封闭的基板。
6.根据权利要求1所述的器件,其中所述LED在所述基板的侧边界的3mm内。
7.根据权利要求1所述的器件,其中所述外部电连接器被配置为连接到外部电源。
8.根据权利要求1所述的器件,其中:
所述互连结构还包括用于将所述互连结构机械地附接到外部部件的外部机械连接器,并且
所述机械连接器和所述电连接器凹进到所述互连结构中。
9.根据权利要求1所述的器件,其中:
所述互连结构包括袋部;
所述基板被置于所述袋部内;并且
所述互连结构的底表面与所述基板的底表面基本上共面。
10.根据权利要求1所述的器件,其中:
所述互连结构包括袋部;
所述基板被置于所述袋部内;并且
所述LED包括延伸到所述互连结构的开口中并且与互连结构的顶表面基本上共面的发光表面。
11.根据权利要求1所述的器件,其中所述基板包括具有矩形形状的侧边界。
12.一种方法,包括:
将发光二极管(LED)裸片置于基板的表面上;
在所述基板的所述表面上制作连接焊盘;
将所述LED裸片电连接到所述连接焊盘;
连接在所述基板上的所述连接焊盘与被置于互连结构上的接触焊盘;并且
其中所述连接焊盘和所述接触焊盘被固定地并且电地连接并且到所述LED的外部电连接通过被置于所述互连结构上的外部电连接器来做出。
13.根据权利要求12所述的方法,其中所述基板和所述互连结构被连接以使得所述互连结构的底表面和所述基板的底表面基本上共面。
14.根据权利要求12所述的方法,还包括经由在所述互连结构上的连接将所述衬底和所述互连结构机械地附接到散热器。
15.根据权利要求12所述的方法,其中将所述LED置于所述衬底的所述表面上包括将所述LED置于所述基板的侧边界的3mm内。
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US12/987,148 | 2011-01-09 | ||
CN201280009734.5A CN103384924B (zh) | 2011-01-09 | 2012-01-09 | 在互连结构中封装只具有顶侧连接的光子构建块 |
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Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8564000B2 (en) | 2010-11-22 | 2013-10-22 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
US9490235B2 (en) | 2010-11-22 | 2016-11-08 | Cree, Inc. | Light emitting devices, systems, and methods |
US9300062B2 (en) | 2010-11-22 | 2016-03-29 | Cree, Inc. | Attachment devices and methods for light emitting devices |
US8624271B2 (en) | 2010-11-22 | 2014-01-07 | Cree, Inc. | Light emitting devices |
US8354684B2 (en) | 2011-01-09 | 2013-01-15 | Bridgelux, Inc. | Packaging photon building blocks having only top side connections in an interconnect structure |
US8737073B2 (en) * | 2011-02-09 | 2014-05-27 | Tsmc Solid State Lighting Ltd. | Systems and methods providing thermal spreading for an LED module |
EP2503214B1 (en) * | 2011-03-24 | 2016-05-18 | OSRAM GmbH | Mounting structure for solid-state light sources |
EP2732208B1 (en) * | 2011-07-14 | 2016-04-20 | OSRAM GmbH | Lighting assembly and associated method |
WO2013026053A1 (en) | 2011-08-18 | 2013-02-21 | Lynk Labs, Inc. | Devices and systems having ac led circuits and methods of driving the same |
US8963310B2 (en) * | 2011-08-24 | 2015-02-24 | Tessera, Inc. | Low cost hybrid high density package |
WO2013070696A1 (en) | 2011-11-07 | 2013-05-16 | Cree, Inc. | High voltage array light emitting diode (led) devices, fixtures and methods |
US10043960B2 (en) * | 2011-11-15 | 2018-08-07 | Cree, Inc. | Light emitting diode (LED) packages and related methods |
US8783911B2 (en) * | 2012-02-17 | 2014-07-22 | Tsmc Solid State Lighting Ltd. | LED packaging structure having improved thermal dissipation and mechanical strength |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
TW201411892A (zh) * | 2012-09-14 | 2014-03-16 | Lextar Electronics Corp | 發光二極體 |
CN105264283B (zh) * | 2013-01-10 | 2018-06-12 | 莫列斯公司 | Led组件 |
JP6264568B2 (ja) * | 2013-08-06 | 2018-01-24 | パナソニックIpマネジメント株式会社 | 発光デバイスおよび表示装置 |
JP6427313B2 (ja) * | 2013-11-01 | 2018-11-21 | 株式会社タムラ製作所 | 発光装置 |
WO2015077623A1 (en) * | 2013-11-22 | 2015-05-28 | Glo Ab | Led submount with integrated interconnects |
CN103822134A (zh) * | 2014-02-11 | 2014-05-28 | 李忠训 | 一种ac高压双面led灯条 |
CN103851596B (zh) * | 2014-02-28 | 2016-02-03 | 捷普科技(上海)有限公司 | 灯组件 |
TW201545378A (zh) * | 2014-05-19 | 2015-12-01 | Achrolux Inc | 封裝結構及其製法 |
JP6271463B2 (ja) | 2015-03-11 | 2018-01-31 | 東芝メモリ株式会社 | 半導体装置 |
CN105228345A (zh) * | 2015-11-05 | 2016-01-06 | 福建众益太阳能科技股份公司 | 太阳能灯、用于太阳能灯的pcb线路板及其制作方法 |
CA3030017A1 (en) * | 2016-07-08 | 2018-01-11 | Eaton Intelligent Power Limited | Led light system having elastomeric encapsulation |
US10818642B2 (en) * | 2016-07-15 | 2020-10-27 | 3M Innovative Properties Company | Multilayer LED substrate |
USD823492S1 (en) | 2016-10-04 | 2018-07-17 | Cree, Inc. | Light emitting device |
EP3310140B1 (en) | 2016-10-14 | 2021-07-14 | Vitesco Technologies GmbH | Mounting assembly with a heatsink |
EP3602626B1 (en) * | 2017-03-21 | 2023-05-03 | Lumileds LLC | Lighting device with led elements on a mounting element on a flat carrier and method of manufacturing the same |
TWI697097B (zh) * | 2017-04-18 | 2020-06-21 | 力智電子股份有限公司 | 電力開關及其半導體裝置 |
US10480720B2 (en) * | 2017-08-17 | 2019-11-19 | Microsoft Technology Licensing, Llc | Active illumination source and PCB components having mountings for reduced Z-height and improved thermal conductivity |
CN109424864B (zh) * | 2017-08-31 | 2021-04-30 | 京东方科技集团股份有限公司 | 光源结构、电子装置及光源结构制作方法 |
KR102035132B1 (ko) * | 2018-01-05 | 2019-10-22 | 엘지전자 주식회사 | 차량용 램프 및 차량 |
KR20190127218A (ko) * | 2018-05-04 | 2019-11-13 | 엘지이노텍 주식회사 | 반도체 소자 패키지 및 이를 포함하는 광조사장치 |
DE102018111791A1 (de) * | 2018-05-16 | 2019-11-21 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
EP3584171B1 (en) | 2018-06-19 | 2023-07-26 | Goodrich Lighting Systems GmbH | Aircraft beacon light and aircraft comprising an aircraft beacon light |
US10622736B2 (en) | 2018-07-10 | 2020-04-14 | Futurewei Technologies, Inc. | Harmonic termination integrated passive device |
KR102674603B1 (ko) * | 2018-09-04 | 2024-06-12 | 현대모비스 주식회사 | 차량용 led 램프 장치 |
KR102163662B1 (ko) * | 2018-12-05 | 2020-10-08 | 현대오트론 주식회사 | 양면 냉각 파워 모듈 및 이의 제조방법 |
US11626448B2 (en) | 2019-03-29 | 2023-04-11 | Lumileds Llc | Fan-out light-emitting diode (LED) device substrate with embedded backplane, lighting system and method of manufacture |
US10986722B1 (en) * | 2019-11-15 | 2021-04-20 | Goodrich Corporation | High performance heat sink for double sided printed circuit boards |
US11631594B2 (en) | 2019-11-19 | 2023-04-18 | Lumileds Llc | Fan out structure for light-emitting diode (LED) device and lighting system |
FR3105705B1 (fr) * | 2019-12-19 | 2021-12-17 | Valeo Vision | Dispositif de pilotage de l’alimentation électrique d’un module lumineux de véhicule automobile |
US11777066B2 (en) * | 2019-12-27 | 2023-10-03 | Lumileds Llc | Flipchip interconnected light-emitting diode package assembly |
US11664347B2 (en) | 2020-01-07 | 2023-05-30 | Lumileds Llc | Ceramic carrier and build up carrier for light-emitting diode (LED) array |
US11476217B2 (en) | 2020-03-10 | 2022-10-18 | Lumileds Llc | Method of manufacturing an augmented LED array assembly |
US20210327859A1 (en) * | 2020-04-17 | 2021-10-21 | Valoya Oy | Pbc-less light emitting unit and method for manufacturing thereof |
CN116137121A (zh) * | 2021-11-16 | 2023-05-19 | 宏启胜精密电子(秦皇岛)有限公司 | 具有发光二极管的显示模组及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1979906A (zh) * | 2005-12-08 | 2007-06-13 | 斯坦雷电气株式会社 | Led光源装置 |
US20070246726A1 (en) * | 2006-04-20 | 2007-10-25 | San Bao Lin | Package structure of light emitting device |
JP2010027955A (ja) * | 2008-07-23 | 2010-02-04 | Stanley Electric Co Ltd | 光半導体装置モジュール |
Family Cites Families (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US6576488B2 (en) | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
JP2003046135A (ja) * | 2001-07-27 | 2003-02-14 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
TW567619B (en) * | 2001-08-09 | 2003-12-21 | Matsushita Electric Ind Co Ltd | LED lighting apparatus and card-type LED light source |
DE10245930A1 (de) | 2002-09-30 | 2004-04-08 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Bauelement-Modul |
EP1550742A4 (en) | 2002-10-10 | 2007-01-03 | Kansai Paint Co Ltd | METHOD FOR PRODUCING A SEMICONDUCTOR FILM AND USE OF SEMICONDUCTOR FILM |
JP4095463B2 (ja) * | 2003-02-13 | 2008-06-04 | 松下電器産業株式会社 | Led光源用ソケット |
DE602004028099D1 (de) * | 2003-02-07 | 2010-08-26 | Panasonic Corp | Beleuchtungseinrichtung, einen sockel verwendend, um ein flaches led-modul auf einen kühlkörper zu montieren |
US6999318B2 (en) * | 2003-07-28 | 2006-02-14 | Honeywell International Inc. | Heatsinking electronic devices |
JP4360858B2 (ja) * | 2003-07-29 | 2009-11-11 | シチズン電子株式会社 | 表面実装型led及びそれを用いた発光装置 |
US20050077616A1 (en) * | 2003-10-09 | 2005-04-14 | Ng Kee Yean | High power light emitting diode device |
US7405093B2 (en) | 2004-08-18 | 2008-07-29 | Cree, Inc. | Methods of assembly for a semiconductor light emitting device package |
TWI277223B (en) | 2004-11-03 | 2007-03-21 | Chen-Lun Hsingchen | A low thermal resistance LED package |
US8125076B2 (en) * | 2004-11-12 | 2012-02-28 | Stats Chippac Ltd. | Semiconductor package system with substrate heat sink |
US7352011B2 (en) | 2004-11-15 | 2008-04-01 | Philips Lumileds Lighting Company, Llc | Wide emitting lens for LED useful for backlighting |
US7344902B2 (en) | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
US7452737B2 (en) | 2004-11-15 | 2008-11-18 | Philips Lumileds Lighting Company, Llc | Molded lens over LED die |
US7858408B2 (en) | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
JP2006190764A (ja) | 2005-01-05 | 2006-07-20 | Stanley Electric Co Ltd | 表面実装型led |
US9793247B2 (en) | 2005-01-10 | 2017-10-17 | Cree, Inc. | Solid state lighting component |
US7821023B2 (en) | 2005-01-10 | 2010-10-26 | Cree, Inc. | Solid state lighting component |
EP1897146A2 (en) | 2005-06-27 | 2008-03-12 | Lamina Lighting, Inc. | Light emitting diode package and method for making same |
US7514643B1 (en) | 2005-07-19 | 2009-04-07 | Judco Manufacturing, Inc. | Lighted pushbutton switch assembly |
US7365371B2 (en) | 2005-08-04 | 2008-04-29 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed encapsulants |
DE102005041064B4 (de) | 2005-08-30 | 2023-01-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
US7550319B2 (en) | 2005-09-01 | 2009-06-23 | E. I. Du Pont De Nemours And Company | Low temperature co-fired ceramic (LTCC) tape compositions, light emitting diode (LED) modules, lighting devices and method of forming thereof |
WO2007045112A1 (de) * | 2005-10-20 | 2007-04-26 | Creative Led Gmbh | Leistungsgehäuse für halbleiterchips und deren anordnung zur wärmeabfuhr |
KR100735310B1 (ko) * | 2006-04-21 | 2007-07-04 | 삼성전기주식회사 | 다층 반사 면 구조를 갖는 엘이디 패키지 및 그 제조방법 |
CN2901586Y (zh) * | 2006-04-24 | 2007-05-16 | 林三宝 | 发光组件的封装结构 |
US7655957B2 (en) | 2006-04-27 | 2010-02-02 | Cree, Inc. | Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same |
US20090273005A1 (en) * | 2006-07-24 | 2009-11-05 | Hung-Yi Lin | Opto-electronic package structure having silicon-substrate and method of forming the same |
JP2008034622A (ja) * | 2006-07-28 | 2008-02-14 | Sharp Corp | 半導体発光素子アセンブリ |
US7884719B2 (en) * | 2006-11-21 | 2011-02-08 | Rcd Technology Inc. | Radio frequency identification (RFID) tag lamination process |
JP2008277626A (ja) * | 2007-05-01 | 2008-11-13 | Nec Lighting Ltd | 発光デバイス及びその製造方法 |
TW200849643A (en) * | 2007-06-06 | 2008-12-16 | Ama Precision Inc | Light emitting module |
US20100181590A1 (en) | 2007-06-25 | 2010-07-22 | Jen-Shyan Chen | Light-emitting diode illuminating apparatus |
US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
US7897418B2 (en) | 2007-12-28 | 2011-03-01 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor light emitting device |
US9018667B2 (en) * | 2008-03-25 | 2015-04-28 | Bridge Semiconductor Corporation | Semiconductor chip assembly with post/base heat spreader and dual adhesives |
US20110163348A1 (en) * | 2008-03-25 | 2011-07-07 | Bridge Semiconductor Corporation | Semiconductor chip assembly with bump/base heat spreader and inverted cavity in bump |
US8310043B2 (en) * | 2008-03-25 | 2012-11-13 | Bridge Semiconductor Corporation | Semiconductor chip assembly with post/base heat spreader with ESD protection layer |
DE202008011979U1 (de) * | 2008-04-01 | 2008-12-11 | Lebensstil Technology Co., Ltd. | Montageanordnung eines Leuchtkörpers |
JP5285417B2 (ja) * | 2008-12-22 | 2013-09-11 | パナソニック株式会社 | 照明装置 |
TWI389228B (zh) * | 2009-01-23 | 2013-03-11 | Everlight Electronics Co Ltd | 電子元件 |
TWI384659B (zh) * | 2009-01-23 | 2013-02-01 | Everlight Electronics Co Ltd | 發光二極體封裝結構 |
JP5283539B2 (ja) * | 2009-03-03 | 2013-09-04 | シャープ株式会社 | 発光装置、発光装置ユニット、および発光装置製造方法 |
JP4951018B2 (ja) * | 2009-03-30 | 2012-06-13 | 株式会社東芝 | 半導体装置の製造方法 |
JP5378882B2 (ja) * | 2009-05-27 | 2013-12-25 | パナソニック株式会社 | 発光モジュールおよび照明装置 |
KR101172709B1 (ko) | 2009-06-24 | 2012-08-09 | 주식회사 이그잭스 | 엘이디 어레이 기판 및 이의 제조방법 |
JP5726409B2 (ja) * | 2009-07-01 | 2015-06-03 | シャープ株式会社 | 発光装置および発光装置の製造方法 |
JP5550886B2 (ja) | 2009-11-13 | 2014-07-16 | シチズン電子株式会社 | Led発光装置 |
US10290788B2 (en) * | 2009-11-24 | 2019-05-14 | Luminus Devices, Inc. | Systems and methods for managing heat from an LED |
JP2011181699A (ja) * | 2010-03-01 | 2011-09-15 | Seiko Instruments Inc | 発光デバイス |
US8354684B2 (en) * | 2011-01-09 | 2013-01-15 | Bridgelux, Inc. | Packaging photon building blocks having only top side connections in an interconnect structure |
US8652860B2 (en) * | 2011-01-09 | 2014-02-18 | Bridgelux, Inc. | Packaging photon building blocks having only top side connections in a molded interconnect structure |
TWI546916B (zh) * | 2011-03-09 | 2016-08-21 | 聯京光電股份有限公司 | 半導體封裝結構與其製造方法 |
JP2011187451A (ja) | 2011-04-28 | 2011-09-22 | Koito Mfg Co Ltd | 発光モジュール及び車輌用灯具 |
TWI536617B (zh) * | 2012-02-17 | 2016-06-01 | 鴻海精密工業股份有限公司 | 發光二極體燈條及其製造方法 |
US8783911B2 (en) * | 2012-02-17 | 2014-07-22 | Tsmc Solid State Lighting Ltd. | LED packaging structure having improved thermal dissipation and mechanical strength |
-
2011
- 2011-01-09 US US12/987,148 patent/US8354684B2/en active Active
- 2011-12-23 TW TW103131816A patent/TWI602325B/zh active
- 2011-12-23 TW TW100148454A patent/TWI456811B/zh active
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2012
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- 2012-01-09 CN CN201280009734.5A patent/CN103384924B/zh active Active
- 2012-01-09 EP EP12732251.9A patent/EP2661777B1/en active Active
- 2012-01-09 WO PCT/US2012/020607 patent/WO2012094663A2/en active Application Filing
- 2012-01-09 KR KR1020137021032A patent/KR101486182B1/ko active IP Right Grant
- 2012-01-09 JP JP2013548603A patent/JP5731674B2/ja active Active
- 2012-01-09 CN CN201510415080.1A patent/CN105098042A/zh active Pending
- 2012-12-21 US US13/724,830 patent/US10347807B2/en active Active
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- 2019-07-03 US US16/502,530 patent/US10840424B2/en active Active
-
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- 2020-11-09 US US17/092,500 patent/US11411152B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1979906A (zh) * | 2005-12-08 | 2007-06-13 | 斯坦雷电气株式会社 | Led光源装置 |
US20070246726A1 (en) * | 2006-04-20 | 2007-10-25 | San Bao Lin | Package structure of light emitting device |
JP2010027955A (ja) * | 2008-07-23 | 2010-02-04 | Stanley Electric Co Ltd | 光半導体装置モジュール |
Also Published As
Publication number | Publication date |
---|---|
TWI456811B (zh) | 2014-10-11 |
US20120175643A1 (en) | 2012-07-12 |
EP2661777A2 (en) | 2013-11-13 |
WO2012094663A3 (en) | 2012-08-30 |
US20130113016A1 (en) | 2013-05-09 |
CN103384924A (zh) | 2013-11-06 |
KR101486182B1 (ko) | 2015-01-23 |
US20200035888A1 (en) | 2020-01-30 |
EP2661777A4 (en) | 2016-10-19 |
JP2014502062A (ja) | 2014-01-23 |
US20210126175A1 (en) | 2021-04-29 |
JP5731674B2 (ja) | 2015-06-10 |
US11411152B2 (en) | 2022-08-09 |
TW201448292A (zh) | 2014-12-16 |
US10840424B2 (en) | 2020-11-17 |
WO2012094663A2 (en) | 2012-07-12 |
US8354684B2 (en) | 2013-01-15 |
US10347807B2 (en) | 2019-07-09 |
TWI602325B (zh) | 2017-10-11 |
DE202012013106U1 (de) | 2014-10-23 |
EP2661777B1 (en) | 2022-07-06 |
KR20130095327A (ko) | 2013-08-27 |
CN103384924B (zh) | 2015-08-26 |
TW201246637A (en) | 2012-11-16 |
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