JP5550886B2 - Led発光装置 - Google Patents
Led発光装置 Download PDFInfo
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- JP5550886B2 JP5550886B2 JP2009260234A JP2009260234A JP5550886B2 JP 5550886 B2 JP5550886 B2 JP 5550886B2 JP 2009260234 A JP2009260234 A JP 2009260234A JP 2009260234 A JP2009260234 A JP 2009260234A JP 5550886 B2 JP5550886 B2 JP 5550886B2
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- circuit board
- emitting device
- light emitting
- vapor deposition
- led light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/4848—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball outside the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
Description
図14,は特許文献1における従来の反射部材付LED発光装置の断面図である。図14においてLED発光装置100は、電極102aを有する樹脂基板102上にLED103をワイヤー104によって実装し、このLED103を透明樹脂105でモールドしている。そして樹脂基板102の上面におけるLED103を実装した周辺には樹脂製の白色反射膜106が設けられている。
以下図面により、本発明の実施形態を説明する。図1から図4は本発明の第1実施形態におけるLED発光装置を示すものであり、図1はLED発光装置の断面図、図2は樹脂コートを除いたLED発光装置の平面図、図3は図1に示すLED発光装置の製造工程を示す断面図である。
図3はLED発光装置10の製造工程を示す断面図であり、(A)は回路基板2の断面図であり、回路基板2の上面には配線電極2a、裏面には出力電極2b、上面と裏面の間には配線電極2aと出力電極2bとを接続するスルーホール電極2cが設けられている。(B)は不連続蒸着膜6を形成した回路基板2の断面図であり、回路基板2の上面側には配線電極2aの上面を含む全面に絶縁反射層としての不連続蒸着膜6が形成されている。(C)はLED3を実装した回路基板2の断面図であり、LED3はバンプ電極3aにより配線電極2aにフリップチップ実装されている。なお、前述の如く不連続蒸着膜6は回路基板2の上面において縦方向には導電性を示すが、面の横方向には導電性を示さないため、LED3のバンプ電極3aは不連続蒸着膜6を介して配線電極2aにAu―Snの共晶接合によってフリップチップ実装されている。(D)はLED発光装置10の完成状態の断面図であり、樹脂コート5を設けることで図1に示すLED発光装置10が完成する。
図4から図7はLED発光装置10の集合基板方式による製造工程を示しており、図4は集合回路基板2Lの平面図、図5は不連続蒸着膜6を形成した集合回路基板2Lの平面図、図6はLED3を実装した集合回路基板2Lの平面図、図7は樹脂コート5を形成した集合回路基板2Lの平面図である。
図8は回路基板2に不連続蒸着膜6を形成している状態を示す真空装置50の斜視図であり模式的に示している。図8において真空装置50の内部に図4に示す複数の回路基板2を有する集合回路基板2Lを複数枚セットする。また加熱装置に蒸着材料の金属をセットした蒸着源60もセットし、この状態から排気孔70より排気を行って真空装置50内部を所定の真空度まで引く。この状態において蒸着源60を加熱することにより蒸着材料の金属を蒸気化し、集合回路基板2Lの上面側に不連続蒸着膜6を形成する。
(第2実施形態)
図10は本願発明の第2実施形態におけるLED発光装置の断面図、図11は樹脂コートを除いたLED発光装置の平面図、図12は図10に示すLED発光装置の製造工程を示す断面図である。また図10,図11,図12に示すLED発光装置の断面図、平面図及び製造工程を示す断面図は、図1、図2、図3に示す第1実施形態のLED発光装置10と基本構成は同じであり、共通部材には共通番号を付し,重複する説明を省略する。
図12はLED発光装置20の製造工程を示す断面図であり、(A)は回路基板2の断面図であり、回路基板2の上面には配線電極2a、裏面には出力電極2b、上面と裏面の間には配線電極2aと裏面側の出力電極2bとを接続するスルーホール電極2cが設けられている。
LED発光装置20の集合基板方式による製造方法は、第1実施形態におけるLED発光装置10と基本的に同じであり、異なる部分として誘電体多層膜26を形成した集合回路基板2Lの平面図のみを図13に示す。図13は図12(C)に示す誘電体多層膜26を形成した集合回路基板2Lの平面図であり、集合回路基板2Lには上面側にダイボンドエリア2ad及びワイヤーボンドエリア2ayを形成した複数の回路基板2が設けられており、ダイボンドエリア2ad及びワイヤーボンドエリア2ay以外の部分に誘電体多層膜26が形成される。この集合回路基板2Lに対するLED3の実装工程、樹脂コート5の形成工程及び切断分離工程は図6,図7に示すLED発光装置10とおなじである。
2a 配線電極
2b 出力電極
2c スルーホール電極
2ad ダイボンドエリア
2ay ワイヤーボンドエリア
2L 集合回路基板
3,103,203 LED
3a バンプ電極
4、104,204 ワイヤー
5,105,205 樹脂コート
6 不連続蒸着膜
6a 蒸着物質
10,20,100,200 LED発光装置
26 誘電体多層膜
27 レジスト
50 真空装置
60 蒸着源
70 排気孔
105,205 透明樹脂
106 白色反射膜
207 絶縁層
208 金属反射層
Claims (2)
- 回路基板上に発光素子を実装した発光装置において、前記回路基板の電極部材を含む上面に金属性光沢を有する絶縁性反射層を設け、前記絶縁性反射層は、真空装置内で前記回路基板の上面に蒸着形成し、前記回路基板の上面の縦方向には導電性を示すが、横方向には導電性を示さない金属性の不連続蒸着膜であり、前記不連続蒸着膜を形成する金属が錫であり、前記不連続蒸着膜が前記回路基板の配線電極の形成領域を含む全面に形成され、前記発光素子が前記回路基板にフリップチップ実装されていることを特徴とする発光装置。
- 前記発光素子の電極と前記回路基板の電極がAu―Sn共晶により接合していることを特徴とする請求項1に記載の発光装置。
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JP2009260234A JP5550886B2 (ja) | 2009-11-13 | 2009-11-13 | Led発光装置 |
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JP2009260234A JP5550886B2 (ja) | 2009-11-13 | 2009-11-13 | Led発光装置 |
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JP2011108748A JP2011108748A (ja) | 2011-06-02 |
JP5550886B2 true JP5550886B2 (ja) | 2014-07-16 |
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JP2009260234A Expired - Fee Related JP5550886B2 (ja) | 2009-11-13 | 2009-11-13 | Led発光装置 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US9461023B2 (en) | 2011-10-28 | 2016-10-04 | Bridgelux, Inc. | Jetting a highly reflective layer onto an LED assembly |
US8536605B2 (en) | 2011-11-28 | 2013-09-17 | Bridgelux, Inc. | Micro-bead blasting process for removing a silicone flash layer |
US8354684B2 (en) | 2011-01-09 | 2013-01-15 | Bridgelux, Inc. | Packaging photon building blocks having only top side connections in an interconnect structure |
US8652860B2 (en) | 2011-01-09 | 2014-02-18 | Bridgelux, Inc. | Packaging photon building blocks having only top side connections in a molded interconnect structure |
JP5532021B2 (ja) * | 2011-06-28 | 2014-06-25 | 豊田合成株式会社 | 発光装置 |
JP5985846B2 (ja) * | 2011-06-29 | 2016-09-06 | Flexceed株式会社 | 発光素子搭載用基板及びledパッケージ |
KR101945532B1 (ko) * | 2011-08-16 | 2019-02-07 | 루미리즈 홀딩 비.브이. | 슬롯에 형성된 반사 벽을 갖는 led 혼합 챔버 |
WO2013116114A1 (en) * | 2012-02-02 | 2013-08-08 | Bridgelux, Inc. | Packaging photon building blocks having only top side connections in a molded interconnect structure |
GB2500232B (en) * | 2012-03-14 | 2015-07-22 | Lamda Guard Technologies Ltd | An optical device |
US9508907B2 (en) * | 2014-09-15 | 2016-11-29 | Koninklijke Philips N.V. | Light emitting device on a mount with a reflective layer |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH02226610A (ja) * | 1989-02-25 | 1990-09-10 | Nippon Steel Corp | 異方性導電接着剤およびそれを用いた電子部品の接続方法 |
JP2989703B2 (ja) * | 1991-10-08 | 1999-12-13 | シャープ株式会社 | チップ部品型発光ダイオード |
JPH098360A (ja) * | 1995-06-20 | 1997-01-10 | Shichizun Denshi:Kk | 発光ダイオード |
JP3505650B2 (ja) * | 2000-08-30 | 2004-03-08 | 日本航空電子工業株式会社 | 異方性導電シートおよびその製造方法 |
JP2002322456A (ja) * | 2001-04-23 | 2002-11-08 | Asahi Glass Co Ltd | 異方性導電ペースト |
JP4222017B2 (ja) * | 2001-12-18 | 2009-02-12 | 日亜化学工業株式会社 | 発光装置 |
JP2003273162A (ja) * | 2002-03-14 | 2003-09-26 | Citizen Watch Co Ltd | 実装体の製造方法 |
JP2009212134A (ja) * | 2008-02-29 | 2009-09-17 | Toshiba Corp | 窒化アルミニウムパッケージ、発光装置、バックライトおよび照明装置 |
JP2009212394A (ja) * | 2008-03-05 | 2009-09-17 | Oki Data Corp | 半導体装置、ledヘッド及び画像形成装置 |
JP5323371B2 (ja) * | 2008-03-17 | 2013-10-23 | シチズンホールディングス株式会社 | Ledデバイスの製造方法 |
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2009
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