CN104937700B - 半导体发光器件中的p接触电阻的控制 - Google Patents
半导体发光器件中的p接触电阻的控制 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 229910052751 metal Inorganic materials 0.000 claims abstract description 137
- 239000002184 metal Substances 0.000 claims abstract description 137
- 239000000463 material Substances 0.000 claims abstract description 102
- 150000002739 metals Chemical class 0.000 claims description 48
- 238000000137 annealing Methods 0.000 claims description 32
- 230000004913 activation Effects 0.000 claims description 23
- 239000001257 hydrogen Substances 0.000 claims description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 20
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- 230000003213 activating effect Effects 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- 229910001021 Ferroalloy Inorganic materials 0.000 claims 1
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- QVLNJJLJVMLHFO-UHFFFAOYSA-N [F].[O-2].[Zn+2] Chemical compound [F].[O-2].[Zn+2] QVLNJJLJVMLHFO-UHFFFAOYSA-N 0.000 claims 1
- -1 conductive oxide Chemical compound 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 abstract description 57
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000005247 gettering Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000416536 Euproctis pseudoconspersa Species 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- UIFOTCALDQIDTI-UHFFFAOYSA-N arsanylidynenickel Chemical group [As]#[Ni] UIFOTCALDQIDTI-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
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Abstract
根据本发明的实施例的器件包括半导体器件结构(10),半导体器件结构包括置于n型半导体区(16)和p型半导体区(12)之间的发光区(14)。垂直于半导体器件结构(10)的生长方向的p型半导体区(12)的表面包括第一部分和第二部分。第一部分的导电性不及第二部分。该器件进一步包括置于p型半导体区(12)上的p接触(21)和置于n型半导体区(16)上的n接触(26)。p接触(21)包括接触金属层(20)和阻塞材料层(24)。阻塞材料层(24)被置于第一部分上方,并且没有阻塞材料层(24)被置于第二部分上方。
Description
技术领域
本发明涉及一种控制III族氮化物器件中的p接触电阻的方法,以及根据方法的实施例而形成的器件。
背景技术
包括发光二极管(LED)、谐振腔发光二极管(RCLED)、垂直腔激光二极管(VCSEL)和边发射激光器的半导体发光器件是当前可用的最有效率的光源之一。当前,在能够跨可见光谱而操作的高亮度发光器件的制造中感兴趣的材料系统包括第III-V组半导体,特别是镓、铝、铟、硼、和氮的二元合金、三元合金、四元合金和五元合金,其也被称为III族氮化物材料。通常,III族氮化物发光器件是通过在蓝宝石、硅碳化物、III族氮化物或者其他适当的衬底上借助金属有机化学气相沉积(MOCVD)、分子束外延(MBE)或者其他外延技术而外延地生长出不同的组成和掺杂浓度的半导体层的叠层来制作的。该叠层常包括形成在衬底上方、掺杂有例如硅的一个或多个n型层,形成在一个或多个n型层上方的有源区中的一个或者多个发光层,以及形成在有源区上方、掺杂有例如镁的一个或多个p型层。电接触形成在n型区和p型区上。
正如Wampler等人在“来自具有整洁有序表面的掺杂镁的氮化镓的氢释放(Hydrogen release from magnesium-doped GaN with clean ordered surfaces)”,J.Appl.Phys., 第94卷,第9号,第5682(2003)页中描述的,由于在生长期间结合的氢(H)带来的受体的钝化的缘故,通过金属有机气相外延(MOVPE)生长的掺杂镁的氮化镓具有低导电性。通过形成电中性的镁-氢复合物而发生钝化。器件要求的p型导电性是借助热退火通过从材料释放氢的对镁的后生长激活而实现的。然而,激活镁受体所要求的高的退火温度[高于700。C…]使得器件的制作变得复杂…当氮化镓表面涂覆有金属薄膜时,或者当在氧化环境中完成退火时,激活会在较低温度下发生。
发明内容
本发明的一个目的是提供一种包括其中导电性可以被策划成改进器件的性能的P型区的器件。
根据本发明的实施例的器件包括半导体结构,该半导体结构包括置于n型区和p型区之间的发光层。垂直于半导体结构的生长方向的p型区的表面包括第一部分和第二部分。第一部分的导电性不及第二部分。该器件进一步包括形成在p型区上的p接触。p接触包括反射器和阻塞材料。阻塞材料被置于第一部分上方。没有阻塞材料被置于第二部分上方。
根据本发明的实施例的方法包括部分地激活III族氮化物结构中的p型区,所述III族氮化物结构包括置于n型区和p型区之间的发光层。在部分地激活p型区之后,在该p型区上形成金属p接触。金属p接触包括第一金属和第二金属。第一金属是反射性的。在形成金属p接触之后,p型区被进一步激活。
附图说明
图1图示形成p接触的方法。
图2、3、4、5、6、7和8图示在p型半导体层上的p接触层的布置。
图9图示倒装芯片器件。
图10图示包括在p型半导体层的一部分上方形成的阻塞材料的倒装芯片器件。
图11图示包括金属接合垫的倒装芯片器件。
图12图示包括金属接合垫和在p型半导体层的一部分上方形成的阻塞材料的倒装芯片器件。
具体实施方式
虽然在下文的示例中,半导体发光器件是发射蓝光或者UV光的III族氮化物LED,但是可以使用除了LED之外的半导体发光器件(诸如激光二极管)以及由需要后生长激活的其他材料系统制成的半导体发光器件。
在本发明的实施例中,激活p型III族氮化物材料的后生长处理被用来策划器件的不同部分的导电性。图1图示根据本发明的实施例的形成p接触的方法。在步骤2,III族氮化物半导体器件结构被部分地激活。III族氮化物半导体器件结构的p型区通过退火或者通过移除氢的任何其他适当技术而被部分地激活。
III族氮化物半导体器件结构生长在生长衬底上,其在本领域是已知的。生长衬底可以是任何适当的衬底,诸如例如蓝宝石、碳化硅、硅、氮化镓或者复合衬底。半导体结构包括被夹在n型区和p型区之间的发光区或者有源区。n型区可以首先被生长,并且可以包括不同组成和掺杂浓度的多个层,包括例如制备层(诸如缓冲层或者成核层)和/或被设计成促进生长衬底的移除的层,其可以是n型的或者非故意掺杂的,以及针对期望使得发光区高效地发光的特定的光学、材料或者电属性设计的n型器件层或者甚至p型器件层。在n型区上方生长发光区或者有源区。适当的发光区的示例包括单个的厚或者薄的发光层,或者包括由阻挡层分隔的多个薄或者厚的发光层的多个量子井发光区。然后,p型区可以在发光区上方生长。与n型区相似,p型区可以包括不同组成、厚度和掺杂浓度的多个层,包括非故意掺杂的层或者n型层。在p型层中生长的最后一层常常是在其上形成金属接触的掺杂镁的氮化镓层。这样的层可以被称为p型接触层。
III族氮化物半导体器件结构的p型区在步骤2中通过退火或者通过移除氢的任何其他适当技术来被部分地激活。如在背景部分中提及的常规的完整退火可以例如是将结构在550。C的腔室中加热1小时。在步骤2中提及的部分激活可以是在较低温度下或者持续较短时间的退火步骤,或者是较短时间和较低温度的组合的退火步骤。例如,在步骤2中,可以通过将半导体结构在500。C的腔室中加热1小时或者在550。C的腔室中加热30分钟对半导体结构进行退火。在步骤2中的部分激活之后,p接触结构形成在其上的p型层的薄层电阻可以是经过完整退火之后的相同的p型层的薄层电阻的两倍。在步骤2的部分激活之后,置于部分被激活的p型接触层上的金属层不能以足够低的接触电阻形成p接触。部分激活退火期间的氢移除的程度可以通过调整退火步骤的温度、退火步骤的长度、退火期间的氧气流和氮气流而被调整。
在图1的步骤4中,在步骤2中描述的部分激活之后,在半导体结构的p型区上形成一个或者多个接触层。接触层常常是金属的,但是其不需要一定是金属的。接触层可以包括接触金属、吸气(getter)金属和阻塞材料。接触金属、吸气金属和阻塞材料中的任一个可以是单个金属层、单个合金层、或者多层叠层。这三种层的具体配置在下文描述。在步骤4中,接触金属、吸气金属和阻塞材料可以被一般地沉积然后被图案化。
接触金属形成具有p型接触层的欧姆接触。在一些实施例中,例如,在倒装芯片LED的情况中,接触金属还是反射器。适当的接触金属的示例包括银和多层镍银结构。
吸气金属吸取氢。吸气金属不形成具有接触金属的合金,但是吸气金属的氧化物可以被用来吸取氢。适当的吸气金属的示例包括钴、镍、铁、铜、或钴、镍、铁、铜的合金、或者多层叠层。
阻塞材料基本上是不可被氧穿透的,例如,因为其足够密实以致其不能被氧穿透,或者因为它优选地优先于吸气金属与氧发生反应。阻塞材料可以是金属。适当的阻塞金属的示例包括钴、镍、铁、铜、钛、钨、铂、金、铱、钌、或者钴、镍、铁、铜、钛、钨、铂、金、铱、钌的合金或者由钴、镍、铁、铜、钛、钨、铂、金、铱或者钌组成的多层叠层。替代性地,导电氧化物(诸如铟锡氧化物、锌氧化物、铟锌氧化物、掺杂氟的锡氧化物或者掺杂铝的锌氧化物)可以被用作阻塞材料(替代于阻塞金属)。因为由退火而带来的激活一般在氧化环境中更加有效率,所以阻塞材料基本上防止氢被释放,或者阻止氢从p型半导体材料被释放。相应地,阻塞材料下方的p型材料一般展现出差的导电性。
在形成了接触金属、吸气金属和阻塞材料之后,可以形成在本领域中已知的、并且是常规的p接触的一部分的其他金属层。例如,防止p接触中的其它层中的一个或者多个层的电迁移的保护金属可以在接触金属、吸气金属和/或阻塞材料上方形成。特别地,钨化钛(TiW)或者钨化钛:氮(TiW:N)保护金属可以在接触金属、吸气金属和/或阻塞材料之后形成,以防止电迁移。
在图1的步骤6中,在步骤4中形成了接触层之后,处理该结构以进一步激活p型半导体材料。可以使用任何适当的激活技术。步骤6中的激活一般是第二退火,例如通过将该结构在200-400。C的腔室中加热30分钟。步骤6中的第二退火经常在比步骤2中的第一退火更低的温度下进行。p型半导体材料的激活的量可以通过调整第二退火步骤的温度、第二退火步骤的长度、第二退火步骤期间的氧气流和/或氮气流而被调整。在一些实施例中,步骤6中的第二退火步骤的条件取决于在步骤2中实现的激活的量。如果p型材料在步骤2中仅仅轻微地被激活,则与在步骤2中p型材料被更多地激活的情况相比,在步骤6中可以执行更高温度的退火或者更长的退火。例如,如果p型材料在步骤2中仅仅部分地被激活,则在步骤6中可以在比上文描述的200-400。C的退火高50至100。C的温度下执行退火和/或持续比上文描述的30分钟长10分钟到1小时的时间执行退火。
图2、3、4、5、6、7和8图示接触金属、吸气金属和阻塞材料的具体布置。在图2、3、4、5、6、7和8的每幅图中,图示了半导体结构10的一部分。半导体结构包括置于p型区12和n型区16之间的发光或者有源区14。发光区14一般包括至少一个氮化铟镓(InGaN)发光层。通常,在半导体结构的顶表面处的p型半导体材料是氮化镓。
图2、3、和4包括接触金属20和吸气金属22,而不具有阻塞材料。在不存在阻塞材料的情况下,p接触电阻不具有空间依赖性,意味着p型区12的整个横向伸展具有相同的接触电阻。激活的程度可以通过以下来控制,即(i)在沉积任何的金属之前外延材料的激活程度;(ii)在形成金属层20和22之后的激活程度;(iii)在图1的方框6中的激活期间的吸气层22的氧化程度;和(iv)吸气层22相对于接触金属20的位置。在图2中,吸气金属22被置为与p型半导体材料12直接接触以使得吸气材料22被置于p型区12和接触金属20之间。在图3中,吸气金属22被置于接触金属20内,以使得接触金属20与p型半导体材料12直接接触。在图4中,接触金属20与p型半导体材料12直接接触,并且吸气金属22被置于接触金属20的顶表面(即,接触金属20的与p型半导体材料12相对的表面)上。
在步骤6中的激活是通过退火步骤进行的情况下,吸气金属22可以在退火步骤期间通过使氧在退火步骤期间流入腔室中而被氧化。当吸气金属22在接触金属的顶部上(如图4),吸气金属22容易被氧化。当吸气金属22被埋在下面(如图2和3)时,一般地,氧依然会通过覆盖吸气金属22的接触金属20中的晶界到达吸气金属。氧化程度可以由退火温度、退火持续时间、退火期间流入到腔室中的氧的量、吸气金属距p型区的表面的距离和/或吸气金属电负性来控制。
图5包括接触金属20和阻塞材料24,但是没有吸气金属。阻塞材料24下方的p型半导体材料中的接触电阻可以通过上文列出的技术(i)和(ii)相对于其他的p型半导体区域而被调节。例如,通过在形成接触金属20和阻塞材料24之前不充分地激活半导体结构,然后在接触金属20和阻塞材料24被沉积和图案化之后进一步激活半导体结构,阻塞材料24下方的p型半导体材料可以被制成有低导电性。阻塞层下方的半导体材料具有低导电性,因为阻塞材料24防止氢从半导体结构被移除,而阻塞材料24的区中的接触金属20的光学反射性一般不会受阻塞材料24下方的低导电性材料影响。形成p型半导体材料12中的两个相邻区:阻塞材料24下方的较低导电性区52,和其中没有形成阻塞材料的较高导电性区54。与顺序地生长的不同导电性的两个p型层(诸如低导电性p型覆层,其后是高导电性p型接触层)不相似,不同导电性的两个区52和54被布置为在横向上与彼此相邻,而不是如在顺序地生长的p型层的情况中那样垂直地彼此相邻。换言之,在本文描述的、包括阻塞材料24的器件中,垂直于生长方向的p型半导体材料的表面包括较低导电性的第一部分和较高导电性的第二部分。
图6、7和8包括接触金属20、吸气金属22和阻塞材料24。在包括阻塞材料24和吸气金属22两者的器件中,阻塞材料24下方的p型半导体材料的导电性可以通过上文列出的技术(i)-(iv)相对于其他p型半导体材料而被调节。例如,通过在形成接触金属20、吸气金属22和阻塞材料24之前不充分地激活半导体结构,然后在接触金属20、吸气金属22和阻塞材料24被沉积和图案化之后进一步激活半导体结构,阻塞材料24下方的p型半导体材料可以被制成有低导电性。阻塞材料24下方的p型半导体材料具有差的导电性,因为阻塞材料24防止氢从半导体结构被移除并且防止吸气层22氧化。通常,接触金属20的光学反射性不会受阻塞材料24下方的低导电性材料影响。
图6、7和8中图示的结构中的吸气金属22的使用提供了接触中的其他层的设计方面的一些灵活性。例如,在没有图2、3、6和7中图示的结构中的嵌入的吸气金属22的情况下,由于对于给定的退火条件和时间,因为必须被移除以激活p型材料的氢仅仅可以穿过接触金属20的某个厚度,所以接触金属22不能太厚。在吸气金属22不存在时,如果接触金属20太厚,则不能感觉到阻塞材料24的效果。因为吸气金属22可以处于接触金属20的中间(如在图7中),所以接触金属20可以是在没有吸气金属的情况下的接触金属的大约两倍厚,因为氧可以从结构的顶表面到达吸气金属22,并且氢可以从半导体12扩散到吸气金属22。此外,吸气金属22和阻塞材料24两者的存在允许使用这样的阻塞层,即:单独使用其可能会不够密实以阻止氢移除,但是其能够通过防止阻塞材料24下面的吸气金属22的部分被氧化(只是通过比吸气金属更容易地可氧化的)而减少或者防止氢移除。在这种情况中,因为阻塞材料24下方的吸气金属22不能被氧化,所以阻塞材料24下方的p型半导体层12一般将展现出低导电性。
吸气金属22和阻塞材料24一般仅被用来激活p型材料。吸气金属22和阻塞材料24对于操作已制成的器件不是必需的。虽然对于操作器件不是需要的,但是吸气金属22和阻塞材料24一般在图1及附随的文本中描述的激活之后保留在器件中。在一些实施例中,特别是在其中吸气金属22和/或阻塞材料24被形成在接触金属22的顶部上的情形中(如在图4、5、6、7和8中),阻塞材料24和吸气金属22中的一个或者两者可以在图1中描述的激活之后被移除,例如通过选择性蚀刻。
图9、10、11和12图示形成具有不同导电性的区的p型区的能力的应用。
图9和10图示倒装芯片器件。p型区12和有源区14的一部分被蚀刻掉,以形成暴露n型区16的一部分的台面25,在n型区16的一部分上形成n接触26。器件相对于半导体结构10的生长方向是倒装的,使得n接触26和p接触21在半导体结构的底部上。生长衬底被移除,并且n型区16的所暴露的表面18被纹理化以改进光提取。从器件所提取的光的大部分是通过纹理化的表面18而被提取的。
在图9中图示的器件中,因为不存在阻塞层,所以p型区12的导电性贯穿p型区基本上是相同的,以使得光贯穿有源区14被均匀地生成。如在图9中图示的,靠近台面25边缘生成的、入射在纹理化表面18上并且被散射回到半导体结构中的光90存在由n接触26吸收和丢失的风险。
在图10中图示的器件中,在靠近台面25的区域中形成阻塞材料24。在图1的方框6中的激活期间,将从与阻塞材料24对准的p型区12中移除氢,并且因此这个区将展现差导电性。来自p接触21的电流优选地从该差导电性区射出,使得在这个区中生成微少的光,但是p接触21在这个区中依然是反射性的。远离阻塞材料24生成的光100不太可能被吸收,并且更可能通过纹理化表面18从半导体结构中提取,如在图10中图示的。
图11和12图示具有大的金属接合垫110和112的倒装芯片器件。图11和12中图示的结构的散热能力可以随区域而变化。例如,图11和12中图示的结构包括两个接合垫:一个110电连接到p接触21,以及一个112电连接到n接触114。接合垫通过介电区118和两个接合垫110和112之间的间隙116而彼此隔离并且与器件上的其他结构隔离。接合垫110和112通常将热从器件中移除。
在图11中图示的器件中,因为不存在阻塞层,所以p型区12的导电性贯穿p型区基本上是相同的,以使得光和因而热贯穿有源区14被均匀地生成。因为由接合垫110和112提供的热移除在间隙116中是不可用的,所以热点可能会在与间隙116对准的半导体结构中形成。这样的热点可能会降低有源区发光的效率,或者可能会通过在热方面加速现有的故障机制而降低可靠性。
在图12中图示的器件中,在与间隙116对准的区域中形成阻塞材料24。在图1的方框6中的激活期间,将氢从与阻塞材料24对准的p型区12中移除,并且这个区将因此展现差的导电性。来自p接触21的电流优选地射出这个差的导电性区,使得微少的光并且因此微少的热在该区中被生成,这可以减少将在间隙116的区域中形成热点的可能性。如图12中图示的阻塞材料的使用可以防止电流射入到散热更差的结中,这可以改进器件的总体可靠性。
已经详细描述了本发明,本领域技术人员将领会的是,给定本公开内容,可以在不偏离在本文描述的发明概念的精神的情况下对本发明做出修改。因此,意图不是将本发明的范围限制为所图示和描述的具体实施例。
Claims (13)
1.一种半导体发光器件,包括:
半导体结构,其包括置于n型区和p型区之间的发光层,所述p型区的表面包括第一部分和第二部分,所述表面垂直于所述半导体结构的生长方向,所述第一部分的导电性不及所述第二部分;和
形成在所述p型区上的p接触,所述p接触包括:
反射器;和
置于所述第一部分上方的材料,并且没有材料被置于所述第二部分上方;
形成在所述n型区上的n接触;
连接至所述p接触的第一金属接合垫;
连接至所述n接触的第二金属接合垫;和
设置在所述第一金属接合垫和所述第二金属接合垫之间的间隙,所述第一部分与所述间隙对准。
2.如权利要求1所述的器件,所述p接触进一步包括吸气金属,其中所述吸气金属比所述反射器更容易地吸取氢。
3.如权利要求2所述的器件,其中所述吸气金属被置于所述p型区和所述反射器之间。
4.如权利要求2所述的器件,其中所述吸气金属被置于所述反射器内。
5.如权利要求2所述的器件,其中所述反射器被置于所述p型区和所述吸气金属之间。
6.如权利要求2所述的器件,其中所述吸气金属包括以下中的一个:钴、镍、铁、铜、钴合金、镍合金、铁合金、以及铜合金。
7.如权利要求1所述的器件,其中所述材料包括以下中的一个:钴、镍、铁、铜、钛、钨、铂、金、铱、钌、导电氧化物、铟锡氧化物、锌氧化物、铟锌氧化物、掺杂氟的锡氧化物、掺杂铝的锌氧化物以及钴、镍、铁、铜、钛、钨、铂、金、铱和钌中的一个的合金。
8.一种用于制造半导体发光器件的方法,所述方法包括:
部分地激活III族氮化物结构中的p型区,所述III族氮化物结构包括置于n型区和p型区之间的发光层;
在部分地激活所述p型区之后,在所述p型区上形成金属p接触,所述金属p接触包括:
第一金属,其中所述第一金属是反射性的;和
第二金属;以及
在形成所述金属p接触之后,进一步激活所述p型区,
其中形成金属p接触包括形成第二金属,使得所述p型区的第一部分被所述第二金属覆盖,并且所述p型区的第二部分不被所述第二金属覆盖,并且所述第二金属防止氢从所述第一部分被移除,并且
其中由所述第二金属覆盖的所述第一部分与设置在第一金属垫和第二金属垫之间的间隙对准,所述第一金属垫电连接至所述n型区,所述第二金属垫电连接至所述p型区。
9.如权利要求8所述的方法,其中部分地激活和进一步激活包括退火。
10.如权利要求8所述的方法,其中部分地激活和进一步激活包括将从氢所述p型区移除。
11.如权利要求10所述的方法,其中形成金属p接触包括形成所述第二金属以使得所述第二金属防止被置于所述第二金属下面的材料被氧化。
12.一种半导体发光器件,包括:
半导体结构,其包括置于n型区和p型区之间的发光层,所述p型区的表面包括第一部分和第二部分,所述表面垂直于所述半导体结构的生长方向,所述第一部分的导电性不及所述第二部分;和
形成在所述p型区上的p接触,所述p接触包括:
反射器;和
置于所述第一部分上方的材料,并且没有材料被置于所述第二部分上方;
所述材料与所述发光层的第一区对准并且没有材料与所述发光层的第二区对准;
所述第一区与设置在第一金属垫和第二金属垫之间的间隙对准,所述第一金属垫电连接至所述n型区,所述第二金属垫电连接至所述p型区,
其中所述第一区比所述第二区发射更少的光。
13.一种半导体发光器件,包括:
半导体结构,其包括置于n型区和p型区之间的发光层,所述p型区的表面包括第一部分和第二部分,所述表面垂直于所述半导体结构的生长方向,所述第一部分的导电性不及所述第二部分;和
形成在所述p型区上的p接触,所述p接触包括:
反射器;和
置于所述第一部分上方的材料,并且没有材料被置于所述第二部分上方;
其中所述半导体结构包括台面,在所述台面中,所述发光层和p型区的一部分不被形成或者被移除,并且所述第一部分与所述台面相邻。
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