CN104936932A - 用于制备石墨烯纳米带的聚合物前体和用于制备它们的合适低聚亚苯基单体 - Google Patents

用于制备石墨烯纳米带的聚合物前体和用于制备它们的合适低聚亚苯基单体 Download PDF

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Publication number
CN104936932A
CN104936932A CN201380071107.9A CN201380071107A CN104936932A CN 104936932 A CN104936932 A CN 104936932A CN 201380071107 A CN201380071107 A CN 201380071107A CN 104936932 A CN104936932 A CN 104936932A
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China
Prior art keywords
halogen
oligophenylene
general formula
graphene nanoribbons
optionally substituted
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CN201380071107.9A
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English (en)
Chinese (zh)
Inventor
K·米伦
X·冯
J·蔡
P·吕菲克斯
R·法泽尔
成田明光
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BASF SE
Max Planck Gesellschaft zur Foerderung der Wissenschaften
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BASF SE
Max Planck Gesellschaft zur Foerderung der Wissenschaften
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C25/00—Compounds containing at least one halogen atom bound to a six-membered aromatic ring
    • C07C25/18—Polycyclic aromatic halogenated hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/10—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aromatic carbon atoms, e.g. polyphenylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/121—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from organic halides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/06—Graphene nanoribbons
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    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/22—Electronic properties
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10—Definition of the polymer structure
    • C08G2261/14—Side-groups
    • C08G2261/148—Side-chains having aromatic units
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
    • C08G2261/312—Non-condensed aromatic systems, e.g. benzene
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
    • C08G2261/314—Condensed aromatic systems, e.g. perylene, anthracene or pyrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/40—Polymerisation processes
    • C08G2261/41—Organometallic coupling reactions
    • C08G2261/414—Stille reactions
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/90—Applications
    • C08G2261/95—Use in organic luminescent diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K50/82—Cathodes

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
CN201380071107.9A 2012-11-16 2013-11-12 用于制备石墨烯纳米带的聚合物前体和用于制备它们的合适低聚亚苯基单体 Pending CN104936932A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261727157P 2012-11-16 2012-11-16
US61/727157 2012-11-16
PCT/IB2013/060075 WO2014076634A1 (en) 2012-11-16 2013-11-12 Polymeric precursors for producing graphene nanoribbons and suitable oligophenylene monomers for preparing them

Publications (1)

Publication Number Publication Date
CN104936932A true CN104936932A (zh) 2015-09-23

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CN201380071107.9A Pending CN104936932A (zh) 2012-11-16 2013-11-12 用于制备石墨烯纳米带的聚合物前体和用于制备它们的合适低聚亚苯基单体

Country Status (7)

Country Link
US (1) US20150299381A1 (enExample)
EP (1) EP2920136A4 (enExample)
JP (1) JP2016505524A (enExample)
KR (1) KR20150087300A (enExample)
CN (1) CN104936932A (enExample)
TW (1) TW201431902A (enExample)
WO (1) WO2014076634A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114181220A (zh) * 2021-12-17 2022-03-15 中国科学技术大学 一种螺线管状磁性碳纳米材料及其制备方法

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* Cited by examiner, † Cited by third party
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CN105502351B (zh) * 2015-12-04 2017-10-20 华南理工大学 一种可溶性石墨烯纳米带及其合成方法与应用
CN105399074B (zh) * 2015-12-04 2017-06-06 华南理工大学 一种石墨烯纳米带及其合成方法与应用
JP6842042B2 (ja) * 2017-03-31 2021-03-17 富士通株式会社 グラフェンナノリボン及びその製造に用いる前駆体分子
JP6867590B2 (ja) 2017-06-16 2021-04-28 富士通株式会社 化合物、化合物の製造方法及びグラフェンナノリボンの製造方法

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CN101787589A (zh) * 2010-02-03 2010-07-28 山东大学 一种截面形状为“一”字型的石墨烯薄膜带的制备方法
EP1196956B1 (en) * 2000-04-10 2012-06-13 Honeywell International Inc. Oligomeric and polymeric oled materials produced via arylation of quinones
CN102653399A (zh) * 2012-05-16 2012-09-05 西安电子科技大学 向3C-SiC注入硅的铜膜退火石墨烯纳米带制备方法
CN102666378A (zh) * 2009-06-15 2012-09-12 威廉马歇莱思大学 用碳纳米管通过接触碱金属制备的石墨烯纳米带

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JP2007019086A (ja) * 2005-07-05 2007-01-25 Toyota Central Res & Dev Lab Inc 有機半導体材料、それを用いた半導体装置及び電界効果トランジスタ
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CN102666378A (zh) * 2009-06-15 2012-09-12 威廉马歇莱思大学 用碳纳米管通过接触碱金属制备的石墨烯纳米带
CN101787589A (zh) * 2010-02-03 2010-07-28 山东大学 一种截面形状为“一”字型的石墨烯薄膜带的制备方法
CN102653399A (zh) * 2012-05-16 2012-09-05 西安电子科技大学 向3C-SiC注入硅的铜膜退火石墨烯纳米带制备方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114181220A (zh) * 2021-12-17 2022-03-15 中国科学技术大学 一种螺线管状磁性碳纳米材料及其制备方法
CN114181220B (zh) * 2021-12-17 2023-03-10 中国科学技术大学 一种螺线管状磁性碳纳米材料及其制备方法

Also Published As

Publication number Publication date
TW201431902A (zh) 2014-08-16
KR20150087300A (ko) 2015-07-29
EP2920136A4 (en) 2016-05-04
JP2016505524A (ja) 2016-02-25
WO2014076634A1 (en) 2014-05-22
US20150299381A1 (en) 2015-10-22
EP2920136A1 (en) 2015-09-23

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