CN104900591B - 低成本半导体器件制造方法 - Google Patents
低成本半导体器件制造方法 Download PDFInfo
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- CN104900591B CN104900591B CN201410647719.4A CN201410647719A CN104900591B CN 104900591 B CN104900591 B CN 104900591B CN 201410647719 A CN201410647719 A CN 201410647719A CN 104900591 B CN104900591 B CN 104900591B
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- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0843—Source or drain regions of field-effect devices
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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Abstract
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CN108470680B (zh) * | 2017-02-23 | 2020-11-03 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的制作方法 |
KR102227666B1 (ko) * | 2017-05-31 | 2021-03-12 | 주식회사 키 파운드리 | 고전압 반도체 소자 |
CN109148606B (zh) * | 2017-06-28 | 2022-04-12 | 联华电子股份有限公司 | 高压元件 |
KR101955098B1 (ko) * | 2017-07-03 | 2019-05-30 | 주식회사 케이이씨 | 과도 전압 억제 소자 및 그 제조 방법 |
KR102256226B1 (ko) * | 2017-08-02 | 2021-05-25 | 매그나칩 반도체 유한회사 | 낮은 소스-드레인 저항을 갖는 반도체 소자 및 그 제조 방법 |
CN111223768B (zh) * | 2018-11-27 | 2024-04-05 | 上海先进半导体制造有限公司 | 低压cmos器件的制作方法 |
KR102224364B1 (ko) | 2019-10-02 | 2021-03-05 | 주식회사 키 파운드리 | 고전압 반도체 소자 및 그 제조 방법 |
TWI761712B (zh) * | 2019-10-16 | 2022-04-21 | 通嘉科技股份有限公司 | 可阻擋逆電流之金氧半電晶體 |
KR102274813B1 (ko) | 2020-02-27 | 2021-07-07 | 주식회사 키 파운드리 | 게이트 전극 통과 이온 주입을 이용한 반도체 소자 제조방법 |
CN111383997A (zh) * | 2020-03-02 | 2020-07-07 | 上海华虹宏力半导体制造有限公司 | 用于高压bcd平台互补金属氧化物半导体的制作方法 |
CN113948567A (zh) * | 2020-07-17 | 2022-01-18 | 和舰芯片制造(苏州)股份有限公司 | 改善ldmos高压侧击穿电压的装置及其制备方法 |
CN111883484B (zh) * | 2020-08-14 | 2023-10-20 | 上海华虹宏力半导体制造有限公司 | 开关ldmos器件的制造方法 |
CN112151618B (zh) * | 2020-09-27 | 2022-09-20 | 杰华特微电子股份有限公司 | 横向超结结构的制造方法 |
CN113035937A (zh) * | 2021-03-12 | 2021-06-25 | 电子科技大学 | 一种高侧功率管的esd保护结构 |
CN113921591A (zh) * | 2021-09-24 | 2022-01-11 | 上海华虹宏力半导体制造有限公司 | Ldmos器件及其形成方法 |
EP4362097A3 (de) * | 2022-10-28 | 2024-06-05 | Elmos Semiconductor SE | Vorrichtung und verfahren zur substratstrombegrenzung |
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KR20150105498A (ko) | 2015-09-17 |
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US20170263762A1 (en) | 2017-09-14 |
US9691893B2 (en) | 2017-06-27 |
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US20150255595A1 (en) | 2015-09-10 |
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