CN104878449B - β-Ga２O３基单晶基板 - Google Patents
β-Ga２O３基单晶基板 Download PDFInfo
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- CN104878449B CN104878449B CN201510089930.3A CN201510089930A CN104878449B CN 104878449 B CN104878449 B CN 104878449B CN 201510089930 A CN201510089930 A CN 201510089930A CN 104878449 B CN104878449 B CN 104878449B
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- monocrystal substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 141
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 142
- 241000193935 Araneus diadematus Species 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 112
- 239000004065 semiconductor Substances 0.000 description 30
- 239000011248 coating agent Substances 0.000 description 19
- 238000000576 coating method Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 19
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 14
- 150000004767 nitrides Chemical class 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 238000002441 X-ray diffraction Methods 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- 239000003708 ampul Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052571 earthenware Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- QFYWYCZNMLSZOA-UHFFFAOYSA-N CCCCC[Mg] Chemical compound CCCCC[Mg] QFYWYCZNMLSZOA-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 206010022000 influenza Diseases 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-039782 | 2014-02-28 | ||
| JP2014039782A JP6013383B2 (ja) | 2014-02-28 | 2014-02-28 | β−Ｇａ２Ｏ３系単結晶基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104878449A CN104878449A (zh) | 2015-09-02 |
| CN104878449B true CN104878449B (zh) | 2019-01-08 |
Family
ID=52544397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510089930.3A Active CN104878449B (zh) | 2014-02-28 | 2015-02-27 | β-Ga２O３基单晶基板 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9349915B2 (fr) |
| EP (1) | EP2924150B1 (fr) |
| JP (1) | JP6013383B2 (fr) |
| KR (1) | KR102372706B1 (fr) |
| CN (1) | CN104878449B (fr) |
| TW (1) | TW201538811A (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5749839B1 (ja) * | 2014-06-30 | 2015-07-15 | 株式会社タムラ製作所 | β−Ｇａ２Ｏ３系単結晶基板 |
| JP6744523B2 (ja) * | 2015-12-16 | 2020-08-19 | 株式会社タムラ製作所 | 半導体基板、並びにエピタキシャルウエハ及びその製造方法 |
| CN106783944B (zh) * | 2016-11-30 | 2020-04-17 | 山东大学 | 一种高质量氧化镓晶片的制备方法与应用 |
| GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
| EP3960915A4 (fr) * | 2019-04-24 | 2022-12-21 | NGK Insulators, Ltd. | Film semi-conducteur |
| JP2021160999A (ja) * | 2020-04-01 | 2021-10-11 | 株式会社ノベルクリスタルテクノロジー | 半導体基板及びその製造方法 |
| JP7083139B1 (ja) * | 2021-08-06 | 2022-06-10 | 株式会社タムラ製作所 | 半導体基板、半導体ウエハ、及び半導体ウエハの製造方法 |
| CN113913925A (zh) * | 2021-09-08 | 2022-01-11 | 杭州富加镓业科技有限公司 | 一种基于导模法的β-Ga2O3单晶生长方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101778967A (zh) * | 2007-08-09 | 2010-07-14 | 昭和电工株式会社 | Ⅲ族氮化物半导体外延基板 |
| CN101967680A (zh) * | 2010-11-04 | 2011-02-09 | 山东大学 | 一种在氧化镁衬底上制备单斜晶型氧化镓单晶薄膜的方法 |
| JP2013103864A (ja) * | 2011-11-15 | 2013-05-30 | Tamura Seisakusho Co Ltd | β−Ｇａ２Ｏ３系単結晶の成長方法 |
| JP2013237591A (ja) * | 2012-05-16 | 2013-11-28 | Namiki Precision Jewel Co Ltd | 酸化ガリウム融液、酸化ガリウム単結晶、酸化ガリウム基板、および酸化ガリウム単結晶の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2517024C (fr) * | 2003-02-24 | 2009-12-01 | Waseda University | Procede de croissance monocristalline .beta.-ga2o3, procede de croissance monocristalline a film mince, dispositif electroluminescent ga2o3 et son procede de fabrication |
| JP5871565B2 (ja) | 2011-11-08 | 2016-03-01 | 三菱電機株式会社 | 系統安定化システム |
| WO2013159808A1 (fr) * | 2012-04-24 | 2013-10-31 | Forschungsverbund Berlin E.V. | Procédé et appareil pour la croissance de monocristaux d'oxyde d'indium (in2o3) et monocristal d'oxyde d'indium (in2o3) |
-
2014
- 2014-02-28 JP JP2014039782A patent/JP6013383B2/ja active Active
-
2015
- 2015-02-24 EP EP15156264.2A patent/EP2924150B1/fr active Active
- 2015-02-25 KR KR1020150026324A patent/KR102372706B1/ko active IP Right Grant
- 2015-02-26 TW TW104106344A patent/TW201538811A/zh unknown
- 2015-02-26 US US14/633,106 patent/US9349915B2/en active Active
- 2015-02-27 CN CN201510089930.3A patent/CN104878449B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101778967A (zh) * | 2007-08-09 | 2010-07-14 | 昭和电工株式会社 | Ⅲ族氮化物半导体外延基板 |
| CN101967680A (zh) * | 2010-11-04 | 2011-02-09 | 山东大学 | 一种在氧化镁衬底上制备单斜晶型氧化镓单晶薄膜的方法 |
| JP2013103864A (ja) * | 2011-11-15 | 2013-05-30 | Tamura Seisakusho Co Ltd | β−Ｇａ２Ｏ３系単結晶の成長方法 |
| JP2013237591A (ja) * | 2012-05-16 | 2013-11-28 | Namiki Precision Jewel Co Ltd | 酸化ガリウム融液、酸化ガリウム単結晶、酸化ガリウム基板、および酸化ガリウム単結晶の製造方法 |
Non-Patent Citations (3)
| Title |
|---|
| Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal;N. Suzuki,et al.;《physica status solidi C》;20070531;第4卷(第7期);第2310-2313页 |
| Ga2O3 Schottky Barrier Diodes Fabricated by Using Single-Crystal β–Ga2O3 (010) Substrates;Kohei Sasaki, et al.;《IEEE ELECTRON DEVICE LETTERS》;20130320;第34卷(第4期);第493-495页 |
| Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method;Hideo AIDA,et al.;《Japanese Journal of Applied Physics》;20081114;第47卷(第11期);第8506-8509页 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015163566A (ja) | 2015-09-10 |
| CN104878449A (zh) | 2015-09-02 |
| TW201538811A (zh) | 2015-10-16 |
| EP2924150A1 (fr) | 2015-09-30 |
| JP6013383B2 (ja) | 2016-10-25 |
| KR20150102703A (ko) | 2015-09-07 |
| EP2924150B1 (fr) | 2017-11-22 |
| US9349915B2 (en) | 2016-05-24 |
| US20150249185A1 (en) | 2015-09-03 |
| KR102372706B1 (ko) | 2022-03-10 |
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Effective date of registration: 20220211 Address after: Tokyo, Japan Patentee after: TAMURA Corp. Address before: Tokyo, Japan Patentee before: TAMURA Corp. Patentee before: Light wave Co., Ltd |