CN104766848A - 具有背侧管芯连接的芯片嵌入的封装 - Google Patents

具有背侧管芯连接的芯片嵌入的封装 Download PDF

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Publication number
CN104766848A
CN104766848A CN201510006011.5A CN201510006011A CN104766848A CN 104766848 A CN104766848 A CN 104766848A CN 201510006011 A CN201510006011 A CN 201510006011A CN 104766848 A CN104766848 A CN 104766848A
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China
Prior art keywords
tube core
metal
metal parts
insulating material
semiconductor packages
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CN201510006011.5A
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Inventor
J.赫格劳尔
J.洛德迈尔
R.奥特伦巴
T.沙尔夫
M.辛德勒
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Infineon Technologies Austria AG
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Infineon Technologies Austria AG
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Publication of CN104766848A publication Critical patent/CN104766848A/zh
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Abstract

具有背侧管芯连接的芯片嵌入的封装。一种半导体封装包括半导体管芯和金属夹。在一个实施例中，半导体管芯被嵌入绝缘材料中并且具有面向第一方向的第一表面、面向与第一方向相反的第二方向的第二表面以及在第一和第二表面之间延伸的边缘。金属夹嵌入管芯之上的所述绝缘材料中并且被接合到管芯的第二表面。金属夹的部分横向延伸到管芯的边缘之外并且在第一方向垂直地延伸以提供在管芯的第二表面处的电流再分布。还提供了半导体封装的其它实施例。

Description

具有背侧管芯连接的芯片嵌入的封装
技术领域
本申请涉及半导体封装，并且更特别地涉及接触嵌入封装中的半导体芯片的背侧。
背景技术
嵌入芯片的封装是半导体芯片（管芯）封装技术，其中添加材料到印刷电路结构以创建可选的无源元件（例如电阻器和电容器），并且有源芯片（管芯）被放置在内层上并且然后由于添加了附加的层而被埋藏。例如，一些嵌入芯片的工艺包括利用非导电膏剂附接到预图案化铜箔的管芯放置、用于尺寸稳定性的标准玻璃增强的预浸料（其中已经存在粘结材料（例如环氧树脂） 的预浸渍的复合纤维）的层压、以及铜箔图案化以实现PCB（印刷电路板）路由层。典型层压结构可以是两到六个层，而更复杂结构为多达10个金属层。标准封装工艺（例如线或夹接合以及常见的模制工艺）通常被电流工艺替代。结果是显著降低的封装占地面积、封装电阻和电感，以及低热阻。然而，将期望的是，针对多芯片的组件来优化嵌入芯片的封装技术，从而改编和扩展嵌入芯片的封装技术以满足不同芯片技术的需要，例如用于功率半导体管芯的高功率触点和嵌入同一封装中的不同厚度的管芯。
发明内容
根据半导体封装的实施例，该封装包括嵌入绝缘材料中的半导体管芯。该管芯具有面向第一方向的第一表面，面向与第一方向相反的第二方向的第二表面以及在第一和第二表面之间延伸的边缘。半导体封装还包括嵌入在管芯之上的绝缘材料中并且被接合到管芯的第二表面的金属夹。金属夹的部分横向延伸到管芯的边缘之外并且在第一方向垂直地延伸以提供在管芯的第二表面处的电流再分布。
根据半导体管芯的另一实施例，该封装包括嵌入绝缘材料中的半导体管芯。该管芯具有相对的第一和第二表面以及在第一和第二表面之间延伸的边缘。该封装还包括布置在管芯之下的绝缘材料中的结构化金属再分布层、连接结构化金属再分布层到在管芯的第一表面处的端子的第一导电通孔、以及嵌入管芯之上的绝缘材料中并且接合到管芯的第二表面的第一金属部件。第一金属部件的部分横向延伸到管芯的边缘之外。该封装还包括从结构化金属再分布层向着第一金属部件垂直延伸并且在第一金属部件之前终止的第二导电通孔，从而在第二导电通孔和第一金属部件中横向延伸到管芯的边缘之外的该部分之间存在间隙。该封装还包括被布置在该间隙中并且将第二导电通孔连接到第一金属部件中横向延伸到管芯的边缘之外的该部分的第二金属部件。
根据半导体封装的再另一实施例，该封装包括嵌入绝缘材料中的半导体管芯。该管芯具有相对的第一和第二表面以及在第一和第二表面之间延伸的边缘。该封装还包括嵌入管芯之上的绝缘材料中并且接合到管芯的第二表面的第一金属部件。第一金属部件的部分横向延伸到管芯的边缘之外。该封装还包括在第一金属部件中横向延伸到管芯的边缘之外的该部分下面布置并且连接到第一金属部件中横向延伸到管芯的边缘之外的该部分的第二金属部件。第二金属部件垂直地延伸穿过绝缘材料，从而第二金属部件的部分不被在封装中背对管芯的第二表面的一侧处的绝缘材料覆盖。第一和第二金属部件形成从管芯的第二表面到封装中背对管芯的第二表面的该侧的至少一个热路径。
本领域技术人员在阅读以下详细描述之后并且在观看附图之后将认识到附加的特征和优点。
附图说明
附图的元素不一定是相对于彼此按比例的。同样的附图标记指示对应的类似部件。各个图示的实施例的特征可以组合，除非它们彼此排斥。实施例在附图中描绘并且在以下的描述中详述。
图1图示了芯片嵌入的半导体封装的实施例的横截面视图。
图2图示了根据替换实施例的图1中所示的芯片嵌入的半导体封装的横截面视图。
图3图示了芯片嵌入的半导体封装的另一实施例的横截面视图。
图4图示了芯片嵌入的半导体封装的再另一实施例的横截面视图。
图5图示了芯片嵌入的半导体封装的再另一实施例的横截面视图。
图6图示了芯片嵌入的半导体封装的另一实施例的横截面视图。
图7图示了芯片嵌入的半导体封装的再另一实施例的横截面视图。
图8图示了芯片嵌入的半导体封装的再另一实施例的横截面视图。
具体实施方式
根据本文描述的实施例，提供了一种嵌入芯片的封装，该封装包括以用于接触嵌入的半导体管芯的背侧的金属夹的形式的附加的重新布线和/或接触元件。根据本文描述的附加实施例，嵌入芯片的封装被提供有背侧重新布线和/或接触元件，以用于厚半导体管芯或嵌入同一封装中的不同厚度的半导体管芯。
图1图示了嵌入芯片的封装100的实施例。封装100包括嵌入绝缘材料104中的第一半导体管芯102。在一个实施例中，绝缘材料104是层压材料，例如标准PCB材料或标准FR4（纤维玻璃增强的环氧树脂层压材料）材料。在另一实施例中，绝缘材料104是模塑料。任何标准芯片层压材料或模制工艺可以用于形成绝缘材料104。例如，在层压材料的情况下，工艺可包括第一管芯102的扩散焊接，用来形成聚合物电介质基质的在组装的管芯102上的RCC（树脂涂覆铜）的层压，在绝缘材料104中的通孔的激光钻孔，以及通过铜的电镀的通孔填充。在模制的情况下，模塑料在被装载到模制室内之前被预加热。在预加热之后，通过液压柱塞迫使模塑料进入罐内，在罐中其达到熔融温度并且变成流体。然后柱塞继续迫使流体模塑料进入模制槽的流槽中。这些流槽用作管道，流体模塑料在该管道中行进直到其到达包含用于密封的物体的腔。在每个情况下，嵌入绝缘材料104中的第一管芯102具有面向第一方向（X）的第一表面106、面向与第一方向相反的第二方向（Y）的第二表面108以及在第一和第二表面106、108之间延伸的边缘110。
封装100还包括被布置在第一管芯102之下的绝缘材料104中的结构化金属再分布层（RDL）112。通过金属和电介质层114、116在晶片或载体的表面上的添加以将I/O（输入/输出）布局再路由到新的、宽松的节距占地面积中，来定义结构化金属再分布层112。这样的再分布利用薄膜聚合物116（例如BCB、（苯并环丁烯）、聚酰亚胺、旭硝子（Asahi Glass）ALX等）和敷金属114（例如Al或Cu）来将外围焊盘再路由到区域阵列构造。可以在主要钝化物（例如SiN或SiON）上直接制造再分布迹线，或可以在第二层聚合物之上路由再分布迹线，以添加附加的顺应性。可将一个或多个附加的金属（以及对应的电介质层）连接到结构化金属再分布层112以便于连接到板或其它部件。为了容易图示，这样的材料层在图1中未示出。
封装100还包括第一导电通孔118，第一导电通孔118将结构化金属再分布层112连接到在第一管芯102的第一表面106处的端子。为了容易图示，在图1中未示出这些端子。可根据任何标准RDL工艺的一部分来形成第一导电通孔118。
金属夹（也统称为半导体封装领域中的金属条）120嵌入到第一管芯102之上的绝缘材料104中并且接合到第一管芯102的第二表面（例如背侧）108。在第一管芯102的第二表面108不是电活性的情况下，即在所有端子被布置在第一管芯102的第一表面（例如前侧）处的情况下，金属夹120可通过粘合剂接合到第一管芯102的第二表面108。这样的粘合剂连接提供从第一管芯102的第二表面108到结构化金属再分布层112的热路径。在电活性背侧，即被布置在第一管芯102的第二表面处的一个或多个端子的情况下，金属夹120可通过焊料或其它导电结合材料、通过先进的扩散焊接，来接合到在第一管芯102的第二表面108处的一个或多个端子。为了容易图示，在第一管芯102的第二表面108处未示出端子。在每个情况下，可在管芯102嵌入绝缘材料104之前，将金属夹120接合到第一管芯102的第二表面108。
通常，金属夹120的部分122横向延伸到第一管芯102的边缘110之外，并且在第一方向X垂直地向结构化金属再分布层112延伸，以提供在第一管芯102的第二表面108处的电流再分布。金属夹120可通过任何标准夹形成工艺，例如冲压、拉拔、切割、蚀刻等来实现。金属夹120可至少部分替代在第一管芯102的第二表面108与结构化金属再分布层112之间的通过固体铜桥的标准丝焊连接，固体铜桥例如通过焊膏来焊接。这样的具有嵌入的夹背侧连接的嵌入芯片封装结构显著增大了封装100的电流（在管芯的电活性背侧的情况下）和/或热承载能力。
封装100还包括将结构化金属再分布层112连接到金属夹120中横向延伸到第一管芯102的边缘110之外并且垂直地向着结构化金属再分布层112延伸的该部分122的第一导电通孔124。与第一导电通孔118一样，可根据任何标准RDL工艺的一部分来形成第二导电通孔124。在结构化金属再分布层112中形成的通孔118、124的尺寸（包括高度）通过所使用的特别的RDL工艺来限制。针对厚管芯，这意味着通孔118、124不能垂直地延伸到封装110中与第一管芯102的第二表面（例如背侧）108相同的水平（L2）。因此，金属夹120的部分122横向延伸到第一管芯102的边缘110之外并且垂直地向着结构化金属再分布层112延伸以使得能够进行与第二通孔124的接触。在一个实施例中，金属夹120中横向延伸到第一管芯102的边缘110之外并且垂直地在第一方向X向着结构化金属再分布层112延伸的该部分122具有表面126，表面126面向结构化金属再分布层112并且在绝缘材料104内与第一管芯102的第一表面106相同的水平（L1）处终止。
封装100可包括多于一个的半导体管芯。例如，半导体封装100可进一步包括嵌入绝缘材料104并且与第一管芯102间隔开的第二半导体管芯128。第二管芯128，和第一管芯102一样，具有面向第一方向X的第一表面130、面向第二（相反）方向Y的第二表面132和在第一和第二表面130、132之间延伸的边缘134。第三导电通孔136将结构化金属再分布层112连接到在第二管芯128的第一表面130处的端子，以形成在管芯102、128之间的电路连接。例如，管芯102、128可以分别是半桥电路的高侧和低侧晶体管。尽管为了容易图示未示出，封装100可包括用于驱动高侧和低侧晶体管的栅极（输入）的驱动器管芯。可替换地，驱动器管芯可被省略并且改为被提供在分开的封装中。
金属夹120中横向延伸到第一管芯102的边缘110之外并且垂直地向着结构化金属再分布层112延伸的该部分122可被插在如图1的多芯片嵌入的封装100中所示的第一和第二管芯102、128之间。可针对第二管芯128提供类似的金属夹布置，为了容易图示，其在图1中未示出。通常，这样的多芯片嵌入的功率封装100使用金属夹120将功率管芯102、28的第二表面（例如背侧）108、132处的电极和/或热触点引到结构化金属再分布层112，而不具有附加的RDL集成要求，因为金属夹120可被预先组装并且延伸到绝缘材料104中与管芯102、128的第一表面106、130相同的水平（L1）。
除了金属夹连接之外，可通过丝焊来可选地提供封装100中的其它连接中的一些连接，为了容易图示，未示出丝焊。金属夹120和第一半导体管芯102可被提供作为预先制造的芯片夹（chip-clip）类型模块，而金属夹120在芯片嵌入工艺之前预接合到第一管芯102。芯片嵌入的封装100可具有不同的再分布布线厚度、夹厚度和/或材料。例如，再分布布线厚度的范围可以从1μm到1000μm并且再分布布线和夹材料可包括Cu、Fe、Ni、Al、Au、Ag、Pt、Pd及其合金。在一个实施例中，结构化金属再分布层112、第一导电通孔118、金属夹120、第二导电通孔124和第三导电通孔136均包括铜或铜合金。
图2图示了图1中所示的嵌入芯片的封装100的替换实施例。根据该实施例，从封装100省略结构化金属再分布层112和对应的导电通孔118、124、136。根据该实施例，半导体管芯102、128的第一表面106、130、金属夹120中横向延伸到管芯102的边缘110之外并且垂直地在第一方向X延伸的部分122以及绝缘材料104的底表面可都在封装100中的同一水平（L1）处终止。根据该实施例，半导体管芯102、128的第一表面106、130以及金属夹120中横向延伸到管芯102的边缘110之外并且垂直地在第一方向X延伸的部分122的底表面126是暴露的，即未被绝缘材料覆盖，以便于外部电气连接。
图3图示了嵌入芯片的封装200的另一实施例。根据该实施例，封装200包括嵌入绝缘材料204中的第一半导体管芯202。绝缘材料204可以是如本文之前描述的层压材料、模塑料等。第一管芯202具有相对的第一和第二表面206、208以及在第一和第二表面206、208之间延伸的边缘210。在第一管芯202之下的绝缘材料204中布置例如本文之前描述的种类的结构化金属再分布层212。第一导电通孔214将结构化金属再分布层212连接到第一管芯202的第一表面206处的端子。为了容易图示，未示出管芯端子。
第一金属部件216嵌入第一管芯202之上的绝缘材料204中，并且接合到第一管芯202的第二表面208。根据该实施例，第一金属部件216是金属引线框，例如Cu引线框。金属引线框216的部分218横向延伸到第一管芯202的边缘210之外，从而引线框216悬于第一管芯202之上。
封装200还包括从结构化金属再分布层212垂直地向着引线框216延伸并且在引线框216之前终止的第二导电通孔220，从而在第二导电通孔220和引线框216中横向延伸到第一管芯202的边缘210之外的部分218之间存在间隙。
封装200还包括布置在第二导电通孔220和第一金属部件216中横向延伸到第一管芯202的边缘210之外的部分218之间的间隙中的第二金属部件222。第二金属部件222连接第二导电通孔220到第一金属部件216中横向延伸到第一管芯202的边缘210之外的部分218。由第二金属部件222提供的附加的金属体积提供了比其它嵌入材料（例如环氧树脂模塑料或层压材料）显著更高的热传递，从而使能具有高导电金属体积的双侧的冷却封装，其在第一管芯202的第二表面（例如背侧）208处的的一个或多个端子的情况下也可支持电气功能。例如，第一金属部件216可电连接到第一管芯202的第二表面208处的端子，并且第二金属部件222和第二导电通孔220可共同地提供在结构化金属再分布层212和第一金属部件216之间的热路径和电气路径两者。
使用第二金属部件222来容纳第一管芯202的高度（H1）的至少大部分还允许使用具有用于第一再分布层212的小通孔工艺的标准RDL技术。例如，标准RDL技术通常允许具有用于第一再分布层的比大约71μm小的高度的通孔。因此，相对厚的管芯（>71μm）能够利用该方法得到组装。此外，提供从第一管芯202的第二表面208通过在板上的第二金属部件222、第一再分布层212和再分布层224到板（为了容易图示，未示出）内的增大的热耗散，而在直接热路径中不具有中间环氧树脂绝缘层。第二金属部件222还提供了高导电金属体积作为对低导电层压材料的替代，并且还在同一封装200内容纳不同的管芯和不同的引线框厚度。
根据图3的实施例，第一金属部件216和第二金属部件222具有单个连续结构。例如，第一金属部件216和第二金属部件222是同一金属引线框的部分。引线框216、222包括被较厚的外部区222围绕的腔或凹进的内部区225。可通过从引线框的内部区225移除引线框材料（例如铜）来形成腔/凹进区225。将第一管芯202定位在引线框的内部腔/凹进区225中。引线框的较厚外部部分222将第二导电通孔220连接到引线框中横向延伸到管芯202的边缘210之外的较薄部分218。可通过任何标准引线框形成工艺（例如冲压、拉拔、切割、蚀刻等）来实现引线框。在一个实施例中，结构化金属再分布层212、第一导电通孔214、第一金属部件216、第二导电通孔220、第二金属部件222和封装200的任何附加通孔226均包括铜或铜合金。
进一步根据图3的实施例，芯片嵌入的封装200还包括嵌入绝缘材料204中并且与第一管芯202间隔开的第二半导体管芯228。两个管芯202、228的第一表面206、230可处于封装200的绝缘材料204内的同一水平（L3）处。如图3所示，第二金属部件222可被横向插在第一和第二管芯202、228之间。可替换地，第二金属部件222可邻近管芯202、208之一，而不横向地插在第一和第二管芯202、228之间。
在每个情况下，第二管芯228，与第一管芯202一样，具有相对的第一和第二表面230、232以及在第一和第二表面230、232之间延伸的边缘234。第三导电通孔236将结构化金属再分布层212连接到在第二管芯228的第一表面230处的端子（为了容易图示未示出）。例如，管芯202、228可以是如本文之前描述的半桥电路的高侧和低侧晶体管。尽管为了容易图示未示出，封装200还可包括用于驱动高侧和低侧晶体管的栅极（输入）的驱动器管芯。可替换地，驱动器管芯可被省略并且改为被提供在分开的封装中。
还根据图3中所示的实施例，第二管芯228的厚度（H2）小于第一管芯202的厚度（H1）。嵌入第二管芯228之上的绝缘材料204中的第三金属部件238接合到第二管芯228的第二表面232。在一个实施例中，第三金属部件238是引线框。第二和第三金属部件222、238可以是同一或不同引线框的部分。例如，第二和第三金属部件2222、38可以由同一引线框带形成，在该引线框带中还形成腔/凹进区225。第三金属部件238的部分横向延伸到第二管芯228的边缘234之外。第四导电通孔240从结构化金属再分布层212垂直地延伸并且将结构化金属再分布层212连接到第三金属部件238中横向延伸到第二管芯228的边缘234之外的部分242。封装200的导电通孔214、220、226、240可根据任何标准RDL工艺的部分形成。
图4图示嵌入芯片的封装300的再另一实施例。图4中示出的实施例类似于图3中示出的实施例，然而，第二金属部件222大致延伸到绝缘材料204中与第一管芯202的第一表面206相同的水平（L3）。
图5图示了嵌入芯片的封装400的再另一实施例。图5中示出的实施例类似于图3中示出的实施例，然而，第一金属部件216是具有大致均匀厚度的金属引线框，并且第二金属部件222是金属块。即，第一和第二金属部件216、222是与彼此分离和不同的。第一和第二金属部件216、222可通过例如粘合剂、焊料等接合到彼此，并且共同地提供如本文之前描述的从第二管芯202的第二表面（例如背侧）208到结构化金属再分布层212的热路径以及可选的电气路径。在图5中用箭头示出从第一管芯202的第二表面208通过第一和第二金属部件216、222到结构化金属再分布层214的热耗散以及可选的电气路径（如果第一管芯的第二表面是电活性的）。如本文之前描述的，热耗散路径缺少在直接热路径中的中间环氧树脂绝缘层。
图6图示了嵌入芯片的封装500的再另一实施例。图6中所示的实施例类似于图5中所示的实施例，然而，第一和第二管芯202、228具有大约相同的厚度（H1≈H2）。即，两个管芯202、228是相对厚的，例如比大约71μm更厚，并且第四导电通孔240在第三金属部件238之前终止，从而在第四导电通孔240和第三金属部件238中横向延伸到第二管芯228的边缘234之外的部分242之间存在附加的间隙。根据该实施例，第四金属部件244被布置在附加的间隙中并且将第四导电通孔240连接到第三金属部件238中横向延伸到附加的管芯228的边缘234之外的部分242。以该方式，可仍然使用利用小通孔工艺（例如具有小于大约71μm的高度限制）的用于第一再分布层212的标准RDL技术。第三金属部件238和第四金属部件244具有单个连续结构，例如根据图6中所示的实施例的金属引线框。
图7图示了嵌入芯片的封装600的再另一实施例。图7中所示的实施例类似于图6中所示的实施例，然而，第三和第四金属部件238、244是与彼此分离和不同的。例如，第三金属部件238可以是具有大约均匀厚度的金属引线框并且第四金属部件244可以是金属块。第三和第四金属部件238、244可通过例如粘合剂、焊料等接合到彼此，并且共同地提供从第二管芯228的第二表面（例如背侧）232到结构化金属再分布层212的热路径和可选的电气路径。第二和第四金属部件222、244可如本文之前描述那样延伸到绝缘材料204中与管芯202、228的第一表面206、230相同的水平（L3），或者如图7中所示那样延伸到绝缘材料204中的不同水平。
图8图示了嵌入芯片的封装700的再另一实施例。图8中所示的实施例类似于图4中所示的实施例，然而，第二金属部件222垂直地穿过绝缘材料204延伸到绝缘材料204的外部表面203，以提供从第一管芯202的第二表面208到封装700之外的至少热路径以及还可选的电气路径（如果第一管芯202的背侧是电活性的）。该路径包括如图8中的虚水平线所指示的穿过第一金属部件216和金属引线框216中横向延伸到第一管芯202的边缘210之外的部分218的横向部分，以及如由图8中的虚垂直线指示的穿过第二金属部件222的垂直部分。管芯202、228可以被重叠成型（over-mold），从而管芯202、228的第一表面206被绝缘材料204覆盖。在任一情况下，第二金属部件222的底表面223保持未被绝缘材料204覆盖，以便于上面描述的热/电路径。第一金属部件216和第二金属部件222可以具有单个连续结构（例如单个引线框）或具有不同结构（例如引线框和分开的金属块），两者都如之前在本文描述的。
空间相对术语，例如“下面”、“之下”、“下部”、“之上”、“上部”等用于描述容易，以解释一个元件相对于第二元件的定位。这些术语意在包含除了与图中描绘的那些取向不同的取向之外的设备的不同取向。此外，例如“第一”、“第二”等术语还用于描述各个元件、区域、部分等，并且也非意在作为限制。同样的术语指的是遍及描述的同样的元件。
如本文使用的，术语“具有”、“包含”、“包括”、“含有”等是开放式术语，其指示所陈述的元件或特征的存在，但不排除附加的元件或特征。冠词“一”、“一个”和“该”意在包括复数和单数，除非上下文明确另有指示。
考虑到变型和应用的上面的范围，应当理解的是，本发明不被前面的描述所限制，也不被附图所限制。相反，本发明仅被以下权利要求及其法律等同形式所限制。

Claims (21)

1.一种半导体封装，包括：
嵌入绝缘材料中的半导体管芯，所述管芯具有面向第一方向的第一表面，面向与所述第一方向相反的第二方向的第二表面以及在所述第一和第二表面之间延伸的边缘；以及
嵌入在所述管芯之上的所述绝缘材料中并且被接合到所述管芯的所述第二表面的金属夹，
其中所述金属夹的部分横向延伸到所述管芯的所述边缘之外并且在所述第一方向垂直地延伸以提供在所述管芯的所述第二表面处的电流再分布。
2.根据权利要求1所述的半导体封装，还包括：
被布置在所述管芯之下的所述绝缘材料中的结构化金属再分布层，
其中所述结构化金属再分布层连接到所述管芯的所述第一表面处的端子并且连接到所述金属夹中横向延伸到所述管芯的所述边缘之外并且在所述第一方向向着所述结构化金属再分布层垂直地延伸的所述部分。
3.根据权利要求2所述的半导体封装，还包括：
第一导电通孔，其将所述结构化金属再分布层连接到在所述管芯的所述第一表面处的所述端子；以及
第二导电通孔，其将所述结构化金属再分布层连接到所述金属夹中横向延伸到所述管芯的所述边缘之外并且在所述第一方向向着所述结构化金属再分布层垂直地延伸的所述部分。
4.根据权利要求2所述的半导体封装，其中所述结构化金属再分布层和所述金属夹包括铜或铜合金。
5.根据权利要求3所述的半导体封装，还包括：
嵌入所述绝缘材料中并且与其它管芯间隔开的附加半导体管芯，所述附加管芯具有面向所述第一方向的第一表面、面向所述第二方向的第二表面和在所述第一和第二表面之间延伸的边缘；以及
第三导电通孔，其将所述结构化金属再分布层连接到在所述附加管芯的所述第一表面处的端子。
6.根据权利要求5所述的半导体封装，其中，所述金属夹中横向延伸到所述管芯的所述边缘之外并且在所述第一方向向着所述结构化金属再分布层垂直地延伸的所述部分被插入所述管芯和所述附加管芯之间。
7.根据权利要求1所述的半导体封装，其中所述绝缘材料是层压材料或模塑料。
8.根据权利要求1所述的半导体封装，其中所述金属夹中横向延伸到所述管芯的所述边缘之外并且在所述第一方向垂直地延伸的所述部分在所述绝缘材料内与所述管芯的第一表面相同的水平处终止。
9.一种半导体封装，包括：
嵌入绝缘材料中的半导体管芯，所述管芯具有相对的第一和第二表面以及在所述第一和第二表面之间延伸的边缘；
布置在所述管芯之下的所述绝缘材料中的结构化金属再分布层；
将所述结构化金属再分布层连接到在所述管芯的所述第一表面处的端子的第一导电通孔；
嵌入所述管芯之上的所述绝缘材料中并且接合到所述管芯的所述第二表面的第一金属部件，所述第一金属部件的部分横向延伸到所述管芯的所述边缘之外；
第二导电通孔，其从所述结构化金属再分布层向着所述第一金属部件垂直延伸并且在所述第一金属部件之前终止，从而在所述第二导电通孔和所述第一金属部件中横向延伸到所述管芯的所述边缘之外的所述部分之间存在间隙；以及
被布置在所述间隙中并且将所述第二导电通孔连接到所述第一金属部件中横向延伸到所述管芯的所述边缘之外的所述部分的第二金属部件。
10.根据权利要求9所述的半导体封装，其中所述结构化金属再分布层、所述第一导电通孔、所述第一金属部件、所述第二导电通孔和所述第二金属部件均包括铜或铜合金。
11.根据权利要求9所述的半导体封装，其中所述绝缘材料是层压材料或模塑料。
12.根据权利要求9所述的半导体封装，其中所述第二金属部件延伸到所述绝缘材料中与所述管芯的所述第一表面相同的水平。
13.根据权利要求9所述的半导体封装，其中所述第一金属部件和所述第二金属部件具有单个连续结构。
14.根据权利要求13所述的半导体封装，其中所述第一金属部件和所述第二金属部件是金属引线框的部分。
15.根据权利要求9所述的半导体封装，其中所述第一金属部件是金属引线框，而所述第二金属部件是金属块。
16.根据权利要求9所述的半导体封装，还包括：
嵌入所述绝缘材料中并且与其它管芯间隔开的附加半导体管芯，所述附加管芯具有相对的第一表面和第二表面和在所述第一和第二表面之间延伸的边缘；以及
第三导电通孔，其将所述结构化金属再分布层连接到在所述附加管芯的所述第一表面处的端子。
17.根据权利要求16所述的半导体封装，其中所述附加管芯比所述其它管芯薄，所述半导体封装还包括：
第三金属部件，其嵌入所述附加管芯之上的所述绝缘材料中并且接合到所述附加管芯的所述第二表面，所述第三金属部件的部分横向延伸到所述附加管芯的所述边缘之外；以及
第四导电通孔，其从所述结构化金属再分布层垂直地延伸并且将所述结构化金属再分布层连接到所述第三金属部件中横向延伸到所述附加管芯的所述边缘之外的所述部分。
18.根据权利要求16所述的半导体封装，还包括：
第三金属部件，其嵌入所述附加管芯之上的所述绝缘材料中并且接合到所述附加管芯的所述第二表面，所述第三金属部件的部分横向延伸到所述附加管芯的所述边缘之外；以及
第四导电通孔，其从所述结构化金属再分布层向着所述第三金属部件垂直地延伸并且在所述第三金属部件之前终止，从而在所述第四导电通孔和所述第三金属部件中横向延伸到所述附加管芯的所述边缘之外的所述部分之间存在附加间隙；以及
第四金属部件，其被布置在所述附加间隙中并且将所述第四导电通孔连接到所述第三金属部件中横向延伸到所述附加管芯的边缘之外的所述部分。
19.根据权利要求16所述的半导体封装，其中所述第二金属部件被插入所述管芯和所述附加管芯之间。
20.根据权利要求9所述的半导体封装，其中所述第一金属部件电连接到所述管芯的第二表面处的端子处，并且其中所述第二金属部件和所述第二导电通孔提供了在所述结构化金属再分布层和所述第一金属部件之间的热路径和电气路径两者。
21.一种半导体封装，包括：
嵌入绝缘材料中的半导体管芯，所述管芯具有相对的第一和第二表面以及在所述第一和第二表面之间延伸的边缘；
嵌入所述管芯之上的所述绝缘材料中并且接合到所述管芯的所述第二表面的第一金属部件，所述第一金属部件的部分横向延伸到所述管芯的所述边缘之外；
第二金属部件，其被布置在所述第一金属部件中横向延伸到所述管芯的所述边缘之外的所述部分下面并且连接到所述第一金属部件中横向延伸到所述管芯的所述边缘之外的所述部分，所述第二金属部件垂直地延伸穿过所述绝缘材料，从而第二金属部件的部分不被在所述封装中背对所述管芯的所述第二表面的一侧处的所述绝缘材料覆盖，
其中所述第一和第二金属部件形成从所述管芯的所述第二表面到所述封装中背对所述管芯的所述第二表面的所述侧的至少热路径。
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