CN104716021B - 形成半导体叠层结构的方法和系统 - Google Patents
形成半导体叠层结构的方法和系统 Download PDFInfo
- Publication number
- CN104716021B CN104716021B CN201410767481.9A CN201410767481A CN104716021B CN 104716021 B CN104716021 B CN 104716021B CN 201410767481 A CN201410767481 A CN 201410767481A CN 104716021 B CN104716021 B CN 104716021B
- Authority
- CN
- China
- Prior art keywords
- adhesive surface
- direct adhesive
- semiconductor wafer
- laminated structure
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 238000013459 approach Methods 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 69
- 238000005520 cutting process Methods 0.000 claims description 47
- 238000004519 manufacturing process Methods 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 230000007246 mechanism Effects 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 5
- 239000007800 oxidant agent Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 230000000644 propagated effect Effects 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229920006395 saturated elastomer Polymers 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 26
- 238000004140 cleaning Methods 0.000 description 20
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 18
- 238000000137 annealing Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000010276 construction Methods 0.000 description 11
- 230000007547 defect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
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- 239000004020 conductor Substances 0.000 description 6
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- 238000001035 drying Methods 0.000 description 5
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
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- 229910052757 nitrogen Inorganic materials 0.000 description 4
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- 229910008045 Si-Si Inorganic materials 0.000 description 3
- 229910006411 Si—Si Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000012536 packaging technology Methods 0.000 description 3
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- 238000012545 processing Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
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- 230000000717 retained effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
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- 235000013399 edible fruits Nutrition 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
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- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229940074355 nitric acid Drugs 0.000 description 1
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- 230000010148 water-pollination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/105,566 | 2013-12-13 | ||
| US14/105,566 US9070745B1 (en) | 2013-12-13 | 2013-12-13 | Methods and systems for forming semiconductor laminate structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104716021A CN104716021A (zh) | 2015-06-17 |
| CN104716021B true CN104716021B (zh) | 2019-04-09 |
Family
ID=53369386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410767481.9A Expired - Fee Related CN104716021B (zh) | 2013-12-13 | 2014-12-12 | 形成半导体叠层结构的方法和系统 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9070745B1 (enExample) |
| JP (1) | JP6465633B2 (enExample) |
| KR (1) | KR20150069548A (enExample) |
| CN (1) | CN104716021B (enExample) |
| SG (1) | SG10201407521YA (enExample) |
| TW (1) | TWI657479B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9937589B2 (en) * | 2015-03-27 | 2018-04-10 | Advanced Research For Manufacturing Systems, Llc | Object manufacturing from a work piece made of separate components |
| CN111403324B (zh) * | 2018-10-23 | 2021-03-12 | 长江存储科技有限责任公司 | 半导体器件翻转装置 |
| US10903050B2 (en) | 2018-12-10 | 2021-01-26 | Lam Research Corporation | Endpoint sensor based control including adjustment of an edge ring parameter for each substrate processed to maintain etch rate uniformity |
| CN114043074B (zh) * | 2021-11-25 | 2024-05-03 | 哈尔滨工业大学 | 一种具有柔性加工能力的小型水导激光加工系统及方法 |
| CN114346474B (zh) * | 2022-01-17 | 2023-05-16 | 博捷芯(深圳)半导体有限公司 | 一种全自动激光晶圆切割装置及切割方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004349435A (ja) * | 2003-05-22 | 2004-12-09 | Takatori Corp | 基板へのダイシング・ダイボンドテープの貼り付け装置 |
| CN101134877A (zh) * | 2006-08-29 | 2008-03-05 | 日东电工株式会社 | 喷水激光切割用粘合片 |
| JP2009212173A (ja) * | 2008-03-03 | 2009-09-17 | Csun Mfg Ltd | ウエハフィルム裁断装置 |
| JP2011211129A (ja) * | 2010-03-31 | 2011-10-20 | Furukawa Electric Co Ltd:The | ウエハ加工用テープ |
| CN102373017A (zh) * | 2010-08-19 | 2012-03-14 | 古河电气工业株式会社 | 晶片加工用胶带 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020115263A1 (en) * | 2001-02-16 | 2002-08-22 | Worth Thomas Michael | Method and related apparatus of processing a substrate |
| JP2003257807A (ja) * | 2002-03-07 | 2003-09-12 | Shin Etsu Chem Co Ltd | シリコン加工品の製造方法およびシリコン加工品 |
| US6822326B2 (en) * | 2002-09-25 | 2004-11-23 | Ziptronix | Wafer bonding hermetic encapsulation |
| JP4128843B2 (ja) * | 2002-10-16 | 2008-07-30 | 古河電気工業株式会社 | 半導体チップ製造方法 |
| CN100548692C (zh) * | 2003-10-10 | 2009-10-14 | 富士胶卷迪马蒂克斯股份有限公司 | 具有薄膜的打印头 |
| JP2006332378A (ja) * | 2005-05-26 | 2006-12-07 | Sharp Corp | 物品の位置決め方法および位置決め装置、並びに半導体装置の製造方法および半導体装置の製造装置 |
| JP2008153349A (ja) * | 2006-12-15 | 2008-07-03 | Disco Abrasive Syst Ltd | ウェーハの分割方法 |
| JP2010519763A (ja) * | 2007-02-22 | 2010-06-03 | ハナ シリコン アイエヌシー | プラズマ処理装置用シリコン素材の製造方法 |
| JP2011088799A (ja) * | 2009-10-26 | 2011-05-06 | Mitsubishi Electric Corp | 半導体装置の製造方法およびレーザー加工装置 |
| FR2954585B1 (fr) * | 2009-12-23 | 2012-03-02 | Soitec Silicon Insulator Technologies | Procede de realisation d'une heterostructure avec minimisation de contrainte |
| JP5952550B2 (ja) * | 2011-11-28 | 2016-07-13 | 株式会社半導体エネルギー研究所 | 貼り合わせ装置 |
-
2013
- 2013-12-13 US US14/105,566 patent/US9070745B1/en not_active Expired - Fee Related
-
2014
- 2014-11-13 SG SG10201407521YA patent/SG10201407521YA/en unknown
- 2014-12-03 JP JP2014244552A patent/JP6465633B2/ja not_active Expired - Fee Related
- 2014-12-11 TW TW103143205A patent/TWI657479B/zh not_active IP Right Cessation
- 2014-12-12 CN CN201410767481.9A patent/CN104716021B/zh not_active Expired - Fee Related
- 2014-12-12 KR KR1020140179232A patent/KR20150069548A/ko not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004349435A (ja) * | 2003-05-22 | 2004-12-09 | Takatori Corp | 基板へのダイシング・ダイボンドテープの貼り付け装置 |
| CN101134877A (zh) * | 2006-08-29 | 2008-03-05 | 日东电工株式会社 | 喷水激光切割用粘合片 |
| JP2009212173A (ja) * | 2008-03-03 | 2009-09-17 | Csun Mfg Ltd | ウエハフィルム裁断装置 |
| JP2011211129A (ja) * | 2010-03-31 | 2011-10-20 | Furukawa Electric Co Ltd:The | ウエハ加工用テープ |
| CN102373017A (zh) * | 2010-08-19 | 2012-03-14 | 古河电气工业株式会社 | 晶片加工用胶带 |
Also Published As
| Publication number | Publication date |
|---|---|
| US9070745B1 (en) | 2015-06-30 |
| SG10201407521YA (en) | 2015-07-30 |
| JP2015122490A (ja) | 2015-07-02 |
| JP6465633B2 (ja) | 2019-02-06 |
| TW201543535A (zh) | 2015-11-16 |
| US20150170958A1 (en) | 2015-06-18 |
| TWI657479B (zh) | 2019-04-21 |
| KR20150069548A (ko) | 2015-06-23 |
| CN104716021A (zh) | 2015-06-17 |
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| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190409 |