JP2015122490A5 - - Google Patents
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- Publication number
- JP2015122490A5 JP2015122490A5 JP2014244552A JP2014244552A JP2015122490A5 JP 2015122490 A5 JP2015122490 A5 JP 2015122490A5 JP 2014244552 A JP2014244552 A JP 2014244552A JP 2014244552 A JP2014244552 A JP 2014244552A JP 2015122490 A5 JP2015122490 A5 JP 2015122490A5
- Authority
- JP
- Japan
- Prior art keywords
- partial component
- direct bonding
- bonding surface
- partial
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 69
- 239000004065 semiconductor Substances 0.000 claims description 49
- 235000012431 wafers Nutrition 0.000 claims description 28
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 230000004927 fusion Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000007800 oxidant agent Substances 0.000 claims description 4
- 230000000452 restraining effect Effects 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 230000002209 hydrophobic effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- -1 oxygen saturated deionized water Chemical class 0.000 claims description 2
- 230000001902 propagating effect Effects 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000012636 effector Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/105,566 US9070745B1 (en) | 2013-12-13 | 2013-12-13 | Methods and systems for forming semiconductor laminate structures |
| US14/105,566 | 2013-12-13 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015122490A JP2015122490A (ja) | 2015-07-02 |
| JP2015122490A5 true JP2015122490A5 (enExample) | 2016-08-18 |
| JP6465633B2 JP6465633B2 (ja) | 2019-02-06 |
Family
ID=53369386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014244552A Expired - Fee Related JP6465633B2 (ja) | 2013-12-13 | 2014-12-03 | 半導体積層構造を形成するための方法および装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9070745B1 (enExample) |
| JP (1) | JP6465633B2 (enExample) |
| KR (1) | KR20150069548A (enExample) |
| CN (1) | CN104716021B (enExample) |
| SG (1) | SG10201407521YA (enExample) |
| TW (1) | TWI657479B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9937589B2 (en) * | 2015-03-27 | 2018-04-10 | Advanced Research For Manufacturing Systems, Llc | Object manufacturing from a work piece made of separate components |
| CN111403324B (zh) * | 2018-10-23 | 2021-03-12 | 长江存储科技有限责任公司 | 半导体器件翻转装置 |
| US10903050B2 (en) | 2018-12-10 | 2021-01-26 | Lam Research Corporation | Endpoint sensor based control including adjustment of an edge ring parameter for each substrate processed to maintain etch rate uniformity |
| CN114043074B (zh) * | 2021-11-25 | 2024-05-03 | 哈尔滨工业大学 | 一种具有柔性加工能力的小型水导激光加工系统及方法 |
| CN114346474B (zh) * | 2022-01-17 | 2023-05-16 | 博捷芯(深圳)半导体有限公司 | 一种全自动激光晶圆切割装置及切割方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020115263A1 (en) * | 2001-02-16 | 2002-08-22 | Worth Thomas Michael | Method and related apparatus of processing a substrate |
| JP2003257807A (ja) * | 2002-03-07 | 2003-09-12 | Shin Etsu Chem Co Ltd | シリコン加工品の製造方法およびシリコン加工品 |
| US6822326B2 (en) * | 2002-09-25 | 2004-11-23 | Ziptronix | Wafer bonding hermetic encapsulation |
| JP4128843B2 (ja) * | 2002-10-16 | 2008-07-30 | 古河電気工業株式会社 | 半導体チップ製造方法 |
| JP4417028B2 (ja) * | 2003-05-22 | 2010-02-17 | 株式会社タカトリ | ダイシングフレームへのダイシングテープの貼り付け装置 |
| WO2005037558A2 (en) * | 2003-10-10 | 2005-04-28 | Dimatix, Inc. | Print head with thin membrane |
| JP2006332378A (ja) * | 2005-05-26 | 2006-12-07 | Sharp Corp | 物品の位置決め方法および位置決め装置、並びに半導体装置の製造方法および半導体装置の製造装置 |
| EP1894662A2 (en) * | 2006-08-29 | 2008-03-05 | Nitto Denko Corporation | Adhesive sheet for water jet laser dicing |
| JP2008153349A (ja) * | 2006-12-15 | 2008-07-03 | Disco Abrasive Syst Ltd | ウェーハの分割方法 |
| US20100006081A1 (en) * | 2007-02-22 | 2010-01-14 | Hana Silicon, Inc | Method for manufacturing silicon matter for plasma processing apparatus |
| JP2009212173A (ja) * | 2008-03-03 | 2009-09-17 | Csun Mfg Ltd | ウエハフィルム裁断装置 |
| JP2011088799A (ja) * | 2009-10-26 | 2011-05-06 | Mitsubishi Electric Corp | 半導体装置の製造方法およびレーザー加工装置 |
| FR2954585B1 (fr) * | 2009-12-23 | 2012-03-02 | Soitec Silicon Insulator Technologies | Procede de realisation d'une heterostructure avec minimisation de contrainte |
| JP5578911B2 (ja) * | 2010-03-31 | 2014-08-27 | 古河電気工業株式会社 | ウエハ加工用テープ |
| CN102373017A (zh) * | 2010-08-19 | 2012-03-14 | 古河电气工业株式会社 | 晶片加工用胶带 |
| JP5952550B2 (ja) * | 2011-11-28 | 2016-07-13 | 株式会社半導体エネルギー研究所 | 貼り合わせ装置 |
-
2013
- 2013-12-13 US US14/105,566 patent/US9070745B1/en not_active Expired - Fee Related
-
2014
- 2014-11-13 SG SG10201407521YA patent/SG10201407521YA/en unknown
- 2014-12-03 JP JP2014244552A patent/JP6465633B2/ja not_active Expired - Fee Related
- 2014-12-11 TW TW103143205A patent/TWI657479B/zh not_active IP Right Cessation
- 2014-12-12 CN CN201410767481.9A patent/CN104716021B/zh not_active Expired - Fee Related
- 2014-12-12 KR KR1020140179232A patent/KR20150069548A/ko not_active Withdrawn
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