SG10201407521YA - Methods and systems for forming semiconductor laminate structures - Google Patents

Methods and systems for forming semiconductor laminate structures

Info

Publication number
SG10201407521YA
SG10201407521YA SG10201407521YA SG10201407521YA SG10201407521YA SG 10201407521Y A SG10201407521Y A SG 10201407521YA SG 10201407521Y A SG10201407521Y A SG 10201407521YA SG 10201407521Y A SG10201407521Y A SG 10201407521YA SG 10201407521Y A SG10201407521Y A SG 10201407521YA
Authority
SG
Singapore
Prior art keywords
systems
methods
semiconductor laminate
forming semiconductor
laminate structures
Prior art date
Application number
SG10201407521YA
Other languages
English (en)
Inventor
F Stumpf John
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201407521YA publication Critical patent/SG10201407521YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
SG10201407521YA 2013-12-13 2014-11-13 Methods and systems for forming semiconductor laminate structures SG10201407521YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/105,566 US9070745B1 (en) 2013-12-13 2013-12-13 Methods and systems for forming semiconductor laminate structures

Publications (1)

Publication Number Publication Date
SG10201407521YA true SG10201407521YA (en) 2015-07-30

Family

ID=53369386

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201407521YA SG10201407521YA (en) 2013-12-13 2014-11-13 Methods and systems for forming semiconductor laminate structures

Country Status (6)

Country Link
US (1) US9070745B1 (enExample)
JP (1) JP6465633B2 (enExample)
KR (1) KR20150069548A (enExample)
CN (1) CN104716021B (enExample)
SG (1) SG10201407521YA (enExample)
TW (1) TWI657479B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9937589B2 (en) * 2015-03-27 2018-04-10 Advanced Research For Manufacturing Systems, Llc Object manufacturing from a work piece made of separate components
CN111403324B (zh) * 2018-10-23 2021-03-12 长江存储科技有限责任公司 半导体器件翻转装置
US10903050B2 (en) 2018-12-10 2021-01-26 Lam Research Corporation Endpoint sensor based control including adjustment of an edge ring parameter for each substrate processed to maintain etch rate uniformity
CN114043074B (zh) * 2021-11-25 2024-05-03 哈尔滨工业大学 一种具有柔性加工能力的小型水导激光加工系统及方法
CN114346474B (zh) * 2022-01-17 2023-05-16 博捷芯(深圳)半导体有限公司 一种全自动激光晶圆切割装置及切割方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020115263A1 (en) * 2001-02-16 2002-08-22 Worth Thomas Michael Method and related apparatus of processing a substrate
JP2003257807A (ja) * 2002-03-07 2003-09-12 Shin Etsu Chem Co Ltd シリコン加工品の製造方法およびシリコン加工品
US6822326B2 (en) * 2002-09-25 2004-11-23 Ziptronix Wafer bonding hermetic encapsulation
JP4128843B2 (ja) * 2002-10-16 2008-07-30 古河電気工業株式会社 半導体チップ製造方法
JP4417028B2 (ja) * 2003-05-22 2010-02-17 株式会社タカトリ ダイシングフレームへのダイシングテープの貼り付け装置
WO2005037558A2 (en) * 2003-10-10 2005-04-28 Dimatix, Inc. Print head with thin membrane
JP2006332378A (ja) * 2005-05-26 2006-12-07 Sharp Corp 物品の位置決め方法および位置決め装置、並びに半導体装置の製造方法および半導体装置の製造装置
EP1894662A2 (en) * 2006-08-29 2008-03-05 Nitto Denko Corporation Adhesive sheet for water jet laser dicing
JP2008153349A (ja) * 2006-12-15 2008-07-03 Disco Abrasive Syst Ltd ウェーハの分割方法
US20100006081A1 (en) * 2007-02-22 2010-01-14 Hana Silicon, Inc Method for manufacturing silicon matter for plasma processing apparatus
JP2009212173A (ja) * 2008-03-03 2009-09-17 Csun Mfg Ltd ウエハフィルム裁断装置
JP2011088799A (ja) * 2009-10-26 2011-05-06 Mitsubishi Electric Corp 半導体装置の製造方法およびレーザー加工装置
FR2954585B1 (fr) * 2009-12-23 2012-03-02 Soitec Silicon Insulator Technologies Procede de realisation d'une heterostructure avec minimisation de contrainte
JP5578911B2 (ja) * 2010-03-31 2014-08-27 古河電気工業株式会社 ウエハ加工用テープ
CN102373017A (zh) * 2010-08-19 2012-03-14 古河电气工业株式会社 晶片加工用胶带
JP5952550B2 (ja) * 2011-11-28 2016-07-13 株式会社半導体エネルギー研究所 貼り合わせ装置

Also Published As

Publication number Publication date
US9070745B1 (en) 2015-06-30
CN104716021A (zh) 2015-06-17
KR20150069548A (ko) 2015-06-23
JP6465633B2 (ja) 2019-02-06
TWI657479B (zh) 2019-04-21
US20150170958A1 (en) 2015-06-18
CN104716021B (zh) 2019-04-09
JP2015122490A (ja) 2015-07-02
TW201543535A (zh) 2015-11-16

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SG10201407521YA (en) Methods and systems for forming semiconductor laminate structures