TWI657479B - 用以形成半導體積層構造之方法及系統 - Google Patents
用以形成半導體積層構造之方法及系統 Download PDFInfo
- Publication number
- TWI657479B TWI657479B TW103143205A TW103143205A TWI657479B TW I657479 B TWI657479 B TW I657479B TW 103143205 A TW103143205 A TW 103143205A TW 103143205 A TW103143205 A TW 103143205A TW I657479 B TWI657479 B TW I657479B
- Authority
- TW
- Taiwan
- Prior art keywords
- sub
- component
- semiconductor
- direct
- laminate structure
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 265
- 238000000034 method Methods 0.000 title claims abstract description 48
- 235000012431 wafers Nutrition 0.000 claims abstract description 114
- 230000004927 fusion Effects 0.000 claims abstract description 52
- 238000013459 approach Methods 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 78
- 238000005520 cutting process Methods 0.000 claims description 52
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 28
- 238000000137 annealing Methods 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 239000007800 oxidant agent Substances 0.000 claims description 5
- 210000000078 claw Anatomy 0.000 claims description 3
- 230000002209 hydrophobic effect Effects 0.000 claims description 3
- 150000002926 oxygen Chemical class 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 230000001902 propagating effect Effects 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 2
- 230000002708 enhancing effect Effects 0.000 claims 1
- 229940119177 germanium dioxide Drugs 0.000 claims 1
- 238000010276 construction Methods 0.000 abstract description 43
- 239000000463 material Substances 0.000 description 23
- 238000004140 cleaning Methods 0.000 description 18
- 230000011218 segmentation Effects 0.000 description 13
- 239000012636 effector Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000000356 contaminant Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910008045 Si-Si Inorganic materials 0.000 description 3
- 229910006411 Si—Si Inorganic materials 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 239000012768 molten material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 210000000481 breast Anatomy 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000009878 intermolecular interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/105,566 US9070745B1 (en) | 2013-12-13 | 2013-12-13 | Methods and systems for forming semiconductor laminate structures |
| US14/105,566 | 2013-12-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201543535A TW201543535A (zh) | 2015-11-16 |
| TWI657479B true TWI657479B (zh) | 2019-04-21 |
Family
ID=53369386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103143205A TWI657479B (zh) | 2013-12-13 | 2014-12-11 | 用以形成半導體積層構造之方法及系統 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9070745B1 (enExample) |
| JP (1) | JP6465633B2 (enExample) |
| KR (1) | KR20150069548A (enExample) |
| CN (1) | CN104716021B (enExample) |
| SG (1) | SG10201407521YA (enExample) |
| TW (1) | TWI657479B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9937589B2 (en) * | 2015-03-27 | 2018-04-10 | Advanced Research For Manufacturing Systems, Llc | Object manufacturing from a work piece made of separate components |
| CN111403324B (zh) * | 2018-10-23 | 2021-03-12 | 长江存储科技有限责任公司 | 半导体器件翻转装置 |
| US10903050B2 (en) | 2018-12-10 | 2021-01-26 | Lam Research Corporation | Endpoint sensor based control including adjustment of an edge ring parameter for each substrate processed to maintain etch rate uniformity |
| CN114043074B (zh) * | 2021-11-25 | 2024-05-03 | 哈尔滨工业大学 | 一种具有柔性加工能力的小型水导激光加工系统及方法 |
| CN114346474B (zh) * | 2022-01-17 | 2023-05-16 | 博捷芯(深圳)半导体有限公司 | 一种全自动激光晶圆切割装置及切割方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020115263A1 (en) * | 2001-02-16 | 2002-08-22 | Worth Thomas Michael | Method and related apparatus of processing a substrate |
| US20040058476A1 (en) * | 2002-09-25 | 2004-03-25 | Ziptronix | Wafer bonding hermetic encapsulation |
| US20050099467A1 (en) * | 2003-10-10 | 2005-05-12 | Andreas Bibl | Print head with thin membrane |
| US20110151644A1 (en) * | 2009-12-23 | 2011-06-23 | Alexandre Vaufredaz | Process for fabricating a heterostructure with minimized stress |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003257807A (ja) * | 2002-03-07 | 2003-09-12 | Shin Etsu Chem Co Ltd | シリコン加工品の製造方法およびシリコン加工品 |
| JP4128843B2 (ja) * | 2002-10-16 | 2008-07-30 | 古河電気工業株式会社 | 半導体チップ製造方法 |
| JP4417028B2 (ja) * | 2003-05-22 | 2010-02-17 | 株式会社タカトリ | ダイシングフレームへのダイシングテープの貼り付け装置 |
| JP2006332378A (ja) * | 2005-05-26 | 2006-12-07 | Sharp Corp | 物品の位置決め方法および位置決め装置、並びに半導体装置の製造方法および半導体装置の製造装置 |
| EP1894662A2 (en) * | 2006-08-29 | 2008-03-05 | Nitto Denko Corporation | Adhesive sheet for water jet laser dicing |
| JP2008153349A (ja) * | 2006-12-15 | 2008-07-03 | Disco Abrasive Syst Ltd | ウェーハの分割方法 |
| US20100006081A1 (en) * | 2007-02-22 | 2010-01-14 | Hana Silicon, Inc | Method for manufacturing silicon matter for plasma processing apparatus |
| JP2009212173A (ja) * | 2008-03-03 | 2009-09-17 | Csun Mfg Ltd | ウエハフィルム裁断装置 |
| JP2011088799A (ja) * | 2009-10-26 | 2011-05-06 | Mitsubishi Electric Corp | 半導体装置の製造方法およびレーザー加工装置 |
| JP5578911B2 (ja) * | 2010-03-31 | 2014-08-27 | 古河電気工業株式会社 | ウエハ加工用テープ |
| CN102373017A (zh) * | 2010-08-19 | 2012-03-14 | 古河电气工业株式会社 | 晶片加工用胶带 |
| JP5952550B2 (ja) * | 2011-11-28 | 2016-07-13 | 株式会社半導体エネルギー研究所 | 貼り合わせ装置 |
-
2013
- 2013-12-13 US US14/105,566 patent/US9070745B1/en not_active Expired - Fee Related
-
2014
- 2014-11-13 SG SG10201407521YA patent/SG10201407521YA/en unknown
- 2014-12-03 JP JP2014244552A patent/JP6465633B2/ja not_active Expired - Fee Related
- 2014-12-11 TW TW103143205A patent/TWI657479B/zh not_active IP Right Cessation
- 2014-12-12 CN CN201410767481.9A patent/CN104716021B/zh not_active Expired - Fee Related
- 2014-12-12 KR KR1020140179232A patent/KR20150069548A/ko not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020115263A1 (en) * | 2001-02-16 | 2002-08-22 | Worth Thomas Michael | Method and related apparatus of processing a substrate |
| US20040058476A1 (en) * | 2002-09-25 | 2004-03-25 | Ziptronix | Wafer bonding hermetic encapsulation |
| US20050099467A1 (en) * | 2003-10-10 | 2005-05-12 | Andreas Bibl | Print head with thin membrane |
| US20110151644A1 (en) * | 2009-12-23 | 2011-06-23 | Alexandre Vaufredaz | Process for fabricating a heterostructure with minimized stress |
Also Published As
| Publication number | Publication date |
|---|---|
| US9070745B1 (en) | 2015-06-30 |
| CN104716021A (zh) | 2015-06-17 |
| KR20150069548A (ko) | 2015-06-23 |
| JP6465633B2 (ja) | 2019-02-06 |
| SG10201407521YA (en) | 2015-07-30 |
| US20150170958A1 (en) | 2015-06-18 |
| CN104716021B (zh) | 2019-04-09 |
| JP2015122490A (ja) | 2015-07-02 |
| TW201543535A (zh) | 2015-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI657479B (zh) | 用以形成半導體積層構造之方法及系統 | |
| KR102027205B1 (ko) | 광점 결함들 및 표면 거칠기를 감소시키기 위한 반도체-온-인슐레이터 웨이퍼 제조 방법 | |
| JP5989642B2 (ja) | シリコン・オン・インシュレータウエハをインサイチュで不導体化する方法 | |
| KR100893182B1 (ko) | 웨이퍼 세정방법 | |
| JP6509744B2 (ja) | フィルムフレームウェハアプリケーションのためのエッチングチャンバシールドリングを用いたレーザ・プラズマエッチングウェハダイシング | |
| TWI541888B (zh) | 用於在基板中形成孔的裝置及方法 | |
| JP2015523731A (ja) | 両面ｕｖ反応性接着フィルムによるレーザ・プラズマエッチングウェハダイシング | |
| WO2013151075A1 (ja) | ガラスフィルムの切断方法及びガラスフィルム積層体 | |
| JP5789798B2 (ja) | 接合方法および接合システム | |
| KR20210033417A (ko) | 에칭 방법 및 기판 처리 시스템 | |
| KR101865594B1 (ko) | 반도체 장비 부품의 세정 장치 및 방법 | |
| CN104737273B (zh) | 通过分子粘附来键合的方法 | |
| KR102544886B1 (ko) | 정전 척 | |
| TW201515076A (zh) | 晶圓之分割方法 | |
| KR20180054598A (ko) | 기판 처리 방법, 기판 처리 장치 및 기억 매체 | |
| WO2014091670A1 (ja) | Ｓｏｉウェーハの製造方法 | |
| WO2020012986A1 (ja) | 基板処理システム及び基板処理方法 | |
| JP2015122490A5 (enExample) | ||
| US9321636B2 (en) | Method for producing a substrate holder | |
| TW202106484A (zh) | 晶圓修整和清洗設備 | |
| TW201903880A (zh) | 晶片的製造方法 | |
| JP2015191993A (ja) | 半導体製造装置及び半導体の製造方法 | |
| JP6228058B2 (ja) | 半導体製造装置及び半導体の製造方法 | |
| US20060131268A1 (en) | Non-contact discrete removal of substrate surface contaminants/coatings, and method, apparatus, and system for implementing the same | |
| US11698506B2 (en) | Carrier mechanism for cleaning and handling |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |