CN104659077A - 非平面SiGe沟道PFET - Google Patents

非平面SiGe沟道PFET Download PDF

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CN104659077A
CN104659077A CN201410674393.4A CN201410674393A CN104659077A CN 104659077 A CN104659077 A CN 104659077A CN 201410674393 A CN201410674393 A CN 201410674393A CN 104659077 A CN104659077 A CN 104659077A
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germanium concentration
channel layer
stress inducing
inducing moiety
simple stress
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CN104659077B (zh
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冯家馨
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明提供了用于制造半导体器件结构的系统和方法。示例性半导体器件结构包括由锗化合物形成的沟道层，沟道层具有锗浓度B且形成在具有锗浓度A的半导体衬底上，其中衬底的锗浓度A小于沟道层的锗浓度B。该结构还包括为使沟道层与金属栅极分隔而形成的覆盖层，该覆盖层具有锗浓度C，沟道层的锗浓度B大于覆盖层的锗浓度C。本发明还公开非平面SiGe沟道PFET。

Description

非平面SiGe沟道PFET
技术领域
本发明所描述的技术总体上与半导体器件结构相关，并且更具体地与多层结构相关。
背景技术
非平面晶体管结构提供一种在小占用面积中实现高器件性能的手段。这样的结构的制造经常被用于生成这些结构的物质的材料属性所限制。如本文所描述，在非平面晶体管结构(诸如三栅极、finFET和全环栅结构)中的沟道材料工程提供了实现高迁移率和提高晶体管性能的机会。
发明内容
根据本文描述的教导，提供了用于制造半导体器件结构的系统和方法。示例性半导体器件结构包括由锗化合物形成的沟道层，沟道层具有锗浓度B且形成在具有锗浓度A的半导体衬底上，其中衬底的锗浓度A小于沟道层的锗浓度B。该结构还包括使沟道层与金属栅极分隔而形成的覆盖层，该覆盖层具有锗浓度C，沟道层的锗浓度B大于覆盖层的锗浓度C。
优选地，半导体器件结构还包括：单轴应力诱导部分化合物，具有锗浓度D且在所述半导体衬底之上且邻近所述沟道层形成，所述单轴应力诱导部分的锗浓度D大于或等于所述沟道层的锗浓度B，并且所述单轴应力诱导部分的锗浓度D大于所述衬底的锗浓度A。
优选地，所述单轴应力诱导部分配置为用作场效应晶体管的源极或漏极，并且其中所述金属栅极配置为用作所述场效应晶体管的栅极。
优选地，所述场效应晶体管配置为使用VDD＞0.6V运行。
优选地，半导体器件结构还包括第二单轴应力诱导部分，所述第二单轴应力诱导部分具有锗浓度E且在所述半导体衬底之上且邻近所述沟道层处形成，所述第二单轴应力诱导部分的锗浓度E大于或等于所述沟道层的锗浓度B，并且所述第二单轴应力诱导部分的锗浓度E大于所述衬底的锗浓度A。
优选地，所述单轴应力诱导部分配置为用作场效应晶体管的源极，并且其中所述第二单轴应力诱导部分配置为用作所述场效应晶体管的漏极。
优选地，所述单轴应力诱导部分的锗浓度D是渐变的，以使所述单轴应力诱导部分的顶部处的锗浓度D1大于所述单轴应力诱导部分的底部处的锗浓度D2。
优选地，当以百分比表示时，所述单轴应力诱导部分的底部处的锗浓度D2减去所述衬底的锗浓度A小于50％。
优选地，所述衬底的锗浓度A为约30％，所述沟道层的锗浓度B为约60％，所述覆盖层的锗浓度C为约0％，以及所述单轴应力诱导部分的锗浓度大于或等于60％。
优选地，所述半导体衬底由硅形成，并具有基本上为零的锗浓度A。
优选地，所述覆盖层由硅形成，并具有基本上为零的锗浓度C。
优选地，半导体器件结构还包括：形成为使得所述覆盖层与所述金属栅极进一步分隔的氧化物介电层。
优选地，当以百分比表示时，所述沟道层的锗浓度B减去所述衬底的锗浓度A小于50％。
优选地，所述金属栅极包括底面并且所述沟道层包括底面，其中所述沟道层的底面从所述金属栅极的底面垂直地偏移。
优选地，所述沟道层的底面比所述金属栅极的底面离所述半导体器件结构的基底更远。
优选地，所述沟道层的底面离所述半导体器件结构的基底比所述金属栅极的底面远1nm至5nm。
在一个实施例中，提供了一种用于制造半导体器件结构的方法。在具有锗浓度A的半导体衬底上形成具有锗浓度B的锗化合物的沟道层，衬底的锗浓度A小于沟道层的锗浓度B。形成覆盖层以使沟道层与金属栅极分隔，覆盖层具有锗浓度C，沟道层的锗浓度B大于覆盖层的锗浓度C。
优选地，所述方法还包括：在所述半导体衬底之上且邻近所述沟道层形成具有锗浓度D的单轴应力诱导部分，所述单轴应力诱导部分的锗浓度D大于或等于所述沟道层的锗浓度B，并且所述单轴应力诱导部分的锗浓度D大于所述衬底的锗浓度A。
优选地，所述单轴应力诱导部分的锗浓度D是渐变的，以便所述单轴应力诱导部分的顶部处的锗浓度D1大于所述单轴应力诱导部分的底部处的锗浓度D2。
优选地，当以百分比表示时，所述单轴应力诱导部分的底部处的锗浓度D2减去所述衬底的锗浓度A小于50％。
附图说明
图1是沿着沟道方向示出了包括含锗沟道层的多层半导体器件结构的图。
图2是沿着宽度方向示出了包括含锗沟道层的多层半导体器件结构的图。
图3是描述制造半导体器件结构的方法的流程图。
具体实施方式
图1图示了示出包括含锗沟道层的多层半导体器件结构的示例性图。由诸如Ge或SiGe的材料制成的含锗沟道层的利用通过引入比使用硅沟道的传统系统较高应力、改进的量子阱限制、以及较高的本征迁移率提供用于改进PFET驱动电流增强的机制。图1是具有含锗沟道层的这样的半导体器件结构100的沿着沟道的视图。半导体材料形成衬底102，相继的结构施加在衬底102上。在不同实施中，衬底102呈现各种形式，诸如硅衬底或诸如含有浓度为A的锗(例如，A％锗)的硅锗的含锗物质。第二半导体材料用以在衬底102顶部上形成沟道层104。沟道层104由锗化合物形成，并且锗浓度为B。在一个实施例中，衬底的锗浓度A小于沟道层的锗浓度B(即，B＞A)。在另一个实施例中，衬底的锗浓度A等于沟道层的锗浓度B。
理想的是，在一个实施例中，衬底的锗浓度A小于但不是太小于沟道层B的锗浓度。已经发现A与B之间的显著差异增加了某些实施中某些晶体缺陷的可能性。为了有助于避免这些缺陷，选择衬底的锗浓度A与沟道层的锗浓度B，以使得当这些浓度以百分比表示时沟道层的锗浓度B减去衬底的锗浓度A小于50％(即，B-A＜50％)。
图1还示出了所形成的覆盖层106将沟道层104与金属栅极108隔离。覆盖层由锗浓度为C的含锗物质形成。为了限制沟道层中空穴，在一个实施例中，覆盖层被形成为使得沟道层的锗浓度B大于覆盖层的锗浓度C(即，B＞C)。覆盖层制造成锗含量低的薄层，包括将覆盖层制造成锗浓度基本为零(即，＜5％)的基本硅层。在某些实施例中额外的层介于上述层之间，所述额外的层诸如由包括高k氧化物电介质的氧化物电介质形成的介电层110。
为了阐述诸如晶体管的半导体结构，将某些单轴应力诱导部分引入半导体器件结构中。例如，在特定的实施方式中，这些单轴应力诱导部分用作制造的晶体管的源极和漏极部分。图1以112、114示出了两个这样的部分。单轴应力诱导部分112、114形成在半导体衬底102之上并且邻近沟道层104。为了对沟道层104提供压缩应力，制造一个或两个单轴应力诱导部分112、114以便使其具有大于或等于沟道层的锗浓度B的锗浓度D(即，D≥B)。在特定的实施方式中，单轴应力诱导部分的锗浓度D也大于衬底的锗浓度A(即，D＞A)。然而，为了避免单轴应力诱导部分112、114和衬底102之间的较大的晶格失配，单轴应力诱导部分的锗浓度D被选择为使得当表述为百分比时单轴应力诱导部分的锗浓度D减去衬底的锗浓度A小于50％(即，D–A<50％)。
图1示出了被构造成作为晶体管来工作的半导体器件结构100。因此，具有锗浓度D的第一单轴应力诱导部分112构造成以场效应晶体管的源极来工作，以及具有锗浓度E(在特定实施方式中等于D)的第二单轴应力诱导部分114构造成以场效应晶体管的漏极来工作。将金属栅极108配置为用作场效应晶体管的栅极，其中，场效应晶体管表现出所期望的特定特性，诸如在特定实施方式中使用VDD>0.6V正常运行。
在特定实施方式中，将单轴应力诱导部分112、114改变为其他方式。例如，在一个实施例中，单轴应力诱导部分112、114的锗浓度从顶部至底部渐变，从而使得单轴应力诱导部分在顶部处的锗浓度D1大于其在底部处的锗浓度D2。在这样的实施方式中，在顶部实施更高的锗浓度D1，同时限制在单轴应力诱导部分112、114与衬底102界面处的较大的晶体失配(例如，选择锗浓度从而使得D2–A<50％)。
大量半导体器件结构可以设计成实施本文描述的特定的设计标准。在一个实例中，将衬底102的锗浓度A选择为30％，将沟道层104的锗浓度B选择为60％，将覆盖层106的锗浓度C选择为0％，并且将单轴应力诱导部分112、114的锗浓度D、E选择为在60％和100％之间。可以改变这些浓度而仍然落在本发明的范围内，本发明的范围包括衬底102的锗浓度A是0％的实施方式。
图2是沿着宽度方向示出包括含锗沟道层的多层半导体器件结构的示意图。半导体器件结构100包括由锗化合物形成的具有锗浓度B的沟道层104，沟道层104在具有锗浓度A的衬底102上形成，其中，锗浓度A小于沟道层的锗浓度B。覆盖层106形成为将沟道层104与金属栅极108分隔开，覆盖层106具有锗浓度C，其中，沟道层的锗浓度B大于覆盖层的锗浓度C。在图2中示出的半导体器件结构包括在覆盖层106和金属栅极108之间具有高k/氧化物介电层110的额外的层(该额外的层包括高k/氧化物介电层110)以及制造于衬底102和金属栅极108之间的浅沟槽隔离(STI)氧化物层116。
在一个实施例中，制造半导体器件以使得金属栅极108的底面118不与沟道层104的底面120垂直对准。通过改变衬底缓冲区124的尺寸实施的偏移X可以被调整以改变特定的半导体器件结构参数。例如，如图2所示，当X为正时，沟道层的底面120相比于金属栅极108的底面118远离半导体器件结构100的基底122，由于有效宽度减小，ION降低，而当X为负时，观察到泄漏电流增加。在一个实施例中，沟道层104的底面120相比于金属栅极108的底面118远离半导体器件结构100的基底122且偏移1至5nm。根据系统需要改变这种偏移，诸如偏移在+5nm至-5nm的数值内。
图3是示出制造半导体器件结构的方法的流程图。在302中，在具有锗浓度A的半导体衬底上形成具有锗浓度B的锗化合物的沟道层，衬底的锗浓度A小于沟道层的锗浓度B。在304中，形成覆盖层以将沟道层与金属栅极分隔开，覆盖层具有锗浓度C，沟道层的锗浓度B大于覆盖层的锗浓度C。在306，在半导体衬底之上并且邻近沟道层形成具有锗浓度D的单轴应力诱导部分，单轴应力诱导部分的锗浓度D大于或等于沟道层的锗浓度B，并且单轴应力诱导部分的锗浓度D大于衬底的锗浓度A。
该撰写的说明书使用实例来公开本发明，包括最佳模式，并且还使得本领域普通技术人员能够制造和使用本发明。本发明的可专利范围可以包括本领域普通技术人员容易想到的其他实例。本领域普通技术人员将认识到需在不要一个或多个具体细节的情况下可以实践各个实施例，或利用其他替代形式和/或额外的方法、材料或部件来实践各个实施例。可以不具体示出或描述已知的结构、材料或操作以避免模糊本发明的各个实施例的各方面。在图中示出的各个实施例为说明性的实例代表并且不必按比例绘制。在一个或多个实施例中，可以以任何合适的方式对特定的部件、结构、材料或特征组合。在其他实施例中可以包括各个额外的层和/或结构和/或可以省略描述的部件。又可以以更有助于理解本发明的方式将各个操作描述为多个离散的操作。然而，描述的顺序不应当被解释为暗示这些操作必须为顺序依赖的。特别地，无需以示出的顺序实施这些操作。相比于描述的实施例，可以以不同的顺序、连续地或同时地实施本文描述的操作。可以实施和/或描述各个额外的操作。在额外的实施例中可以省略操作。
该撰写的说明书和权利要求可以包括诸如左、右、顶部、底部、在…上方、在……下方、上、下、第一、第二等的术语，这些术语仅用于描述的目的并且不被解释为限制意义。例如，代表相对垂直位置的术语可以表示其中衬底或集成电路的器件侧(或有源表面)是衬底的“顶”面；事实上，衬底可以处于任何方位，从而使得在标准陆地参考框架中，衬底的“顶”侧可以低于衬底的“底”侧并且仍然可落在术语“顶部”的含义内。如本文(包括权利要求中)中使用的术语“在…上”可以不指示在第二层上的第一层是直接位于第二层上并且立即与第二层接触，除非具体地陈述这种情形；在第一层和位于第一层上的第二层之间可以有第三层或其他结构。可以以多个位置和方位制造、使用或载运本文描述的器件或物品的实施例。本领域普通技术人员应该意识到图中示出的各个部件的各种等效组合和替代。

Claims (10)

1.一种半导体器件结构，包括：
沟道层，由锗化合物形成，所述沟道层具有锗浓度B且形成在具有锗浓度A的半导体衬底上，所述衬底的锗浓度A小于所述沟道层的锗浓度B；
覆盖层，形成为使得所述沟道层与金属栅极分隔，所述覆盖层具有锗浓度C，所述沟道层的锗浓度B大于所述覆盖层的锗浓度C。
2.根据权利要求1所述的半导体器件结构，还包括：
单轴应力诱导部分化合物，具有锗浓度D且在所述半导体衬底之上且邻近所述沟道层形成，所述单轴应力诱导部分的锗浓度D大于或等于所述沟道层的锗浓度B，并且所述单轴应力诱导部分的锗浓度D大于所述衬底的锗浓度A。
3.根据权利要求2所述的半导体器件结构，其中，所述单轴应力诱导部分配置为用作场效应晶体管的源极或漏极，并且其中所述金属栅极配置为用作所述场效应晶体管的栅极。
4.根据权利要求3所述的半导体器件结构，其中，所述场效应晶体管配置为使用VDD＞0.6V运行。
5.根据权利要求3所述的半导体器件结构，还包括第二单轴应力诱导部分，所述第二单轴应力诱导部分具有锗浓度E且在所述半导体衬底之上且邻近所述沟道层处形成，所述第二单轴应力诱导部分的锗浓度E大于或等于所述沟道层的锗浓度B，并且所述第二单轴应力诱导部分的锗浓度E大于所述衬底的锗浓度A。
6.根据权利要求5所述的半导体器件结构，其中，所述单轴应力诱导部分配置为用作场效应晶体管的源极，并且其中所述第二单轴应力诱导部分配置为用作所述场效应晶体管的漏极。
7.根据权利要求2所述的半导体器件结构，其中，所述单轴应力诱导部分的锗浓度D是渐变的，以使所述单轴应力诱导部分的顶部处的锗浓度D1大于所述单轴应力诱导部分的底部处的锗浓度D2。
8.根据权利要求7所述的半导体器件结构，其中，当以百分比表示时，所述单轴应力诱导部分的底部处的锗浓度D2减去所述衬底的锗浓度A小于50％。
9.根据权利要求2所述的半导体器件结构，其中，所述衬底的锗浓度A为约30％，所述沟道层的锗浓度B为约60％，所述覆盖层的锗浓度C为约0％，以及所述单轴应力诱导部分的锗浓度大于或等于60％。
10.一种制造半导体器件结构的方法，包括：
在具有锗浓度A的半导体衬底上形成具有锗浓度B的锗化合物的沟道层，所述衬底的锗浓度A小于所述沟道层的锗浓度B；
形成覆盖层以使所述沟道层与金属栅极分隔，所述覆盖层具有锗浓度C，所述沟道层的锗浓度B大于所述覆盖层的锗浓度C。
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