CN104508810B - 布线基板 - Google Patents
布线基板 Download PDFInfo
- Publication number
- CN104508810B CN104508810B CN201380038723.4A CN201380038723A CN104508810B CN 104508810 B CN104508810 B CN 104508810B CN 201380038723 A CN201380038723 A CN 201380038723A CN 104508810 B CN104508810 B CN 104508810B
- Authority
- CN
- China
- Prior art keywords
- circuit board
- insulating barrier
- connection terminal
- basic unit
- opening portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000003746 surface roughness Effects 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 33
- 239000004020 conductor Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/116—Manufacturing methods by patterning a pre-deposited material
- H01L2224/1161—Physical or chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13113—Bismuth [Bi] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/32237—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81447—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83102—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus using surface energy, e.g. capillary forces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/38—Effects and problems related to the device integration
- H01L2924/384—Bump effects
- H01L2924/3841—Solder bridging
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09018—Rigid curved substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10954—Other details of electrical connections
- H05K2201/10977—Encapsulated connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0594—Insulating resist or coating with special shaped edges
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0597—Resist applied over the edges or sides of conductors, e.g. for protection during etching or plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
一种布线基板,其能抑制形成因填底胶的填充不良而产生的空隙。布线基板包括:基层,其具有绝缘性;绝缘层,其层叠于基层;以及连接端子,其具有导电性,在开口部的内侧自绝缘层突出。绝缘层具有:第1表面,其形成有开口部;以及第2表面,其在开口部的内侧相对于第1表面向基层侧凹陷。第2表面在开口部的内侧形成在从第1表面到连接端子的整个范围内。在沿着绝缘层相对于基层层叠的层叠方向的平面、即剖面中,自第2表面中的任意点朝向绝缘层外侧的法线、同自该任意点以与第1表面平行的方式朝向连接端子的平行线所成的角度大于0°且小于90°。
Description
技术领域
本发明涉及布线基板。
背景技术
对于布线基板而言,已知有构成为能够安装半导体芯片的布线基板(例如,参照专利文献1、2)。在这样的布线基板上形成有连接端子,该连接端子构成为能够与半导体芯片连接。
在专利文献1中记载了这样的技术:为了防止因镀敷材料导致连接端子之间发生电短路,而形成具有开口的绝缘层,该开口能使多个连接端子暴露,在该开口处的多个连接端子之间形成绝缘物,之后,对多个连接端子实施镀敷。在专利文献2中记载了这样的技术:为了防止因软钎料导致连接端子之间发生电短路,而将形成在连接端子之间的绝缘层减薄至连接端子的厚度以下。
在向布线基板安装半导体芯片时,将布线基板的连接端子钎焊于半导体芯片,并且向连接端子周围的布线基板与半导体芯片之间的间隙填充液状固化性树脂,该液状固化性树脂还被称作填底胶(underfill)(例如,参照专利文献3)。
现有技术文献
专利文献
专利文献1:日本特开2007-103648号公报
专利文献2:日本特开2011-192692号公报
专利文献3:日本特开2010-153495号公报
发明内容
发明要解决的问题
在专利文献1、2中,考虑到了防止因镀敷、软钎料导致连接端子之间发生短路的情况,但对于向连接端子周围填充的填底胶没有进行充分的考虑,因而存在这样的问题:有时会形成空隙(空洞),该空隙是因填底胶的流动受到阻碍、填底胶的填充不良而产生的。在专利文献3中,没有对填底胶被吸入布线基板与半导体芯片之间的间隙后的流动情况进行充分的考虑,因而存在这样的问题:有时会形成因填底胶的填充不良而产生的空隙。
用于解决问题的方案
本发明是为了解决所述问题而做成的,能够通过以下的技术方案实现。
(1)根据本发明的一技术方案,提供一种布线基板,该布线基板包括:基层,其具有绝缘性;绝缘层,其层叠于所述基层,具有第1表面和第2表面,该第1表面形成有开口部,该第2表面在所述开口部的内侧相对于所述第1表面向所述基层侧凹陷;以及连接端子,其具有导电性,在所述开口部的内侧自所述绝缘层突出。在该布线基板中,所述第2表面在所述开口部的内侧形成在从所述第1表面到所述连接端子的整个范围内;在沿着所述绝缘层相对于所述基层层叠的层叠方向的平面、即剖面中,自所述第2表面中的任意点朝向所述绝缘层外侧的法线、同自所述任意点以与所述第1表面平行的方式朝向所述连接端子的平行线所成的角度大于0°且小于90°。采用该技术方案的布线基板,在第2表面的各个部位将填底胶的流动向连接端子侧引导,从而能够使填底胶的流动稳定化。其结果,能够抑制形成因填底胶的填充不良而产生的空隙。
(2)在所述技术方案的布线基板中,也可以是,所述第2表面由曲面构成。与第2表面由平面构成的情况相比,采用该技术方案的布线基板,第2表面的与填底胶接触的表面积增加,因此能够提高第2表面与填底胶之间的密合性。并且,与第2表面由平面构成的情况相比,绝缘层的随着填底胶的固化而产生的应力减小,因此能够抑制绝缘层出现开裂(裂纹)。
(3)在所述技术方案的布线基板中,也可以是,所述第2表面由平面构成。与第2表面由曲面构成的情况相比,采用该技术方案的布线基板,填底胶在第2表面之上流动的距离缩短,因此能够缩短填充填底胶所需要的时间。
(4)在所述技术方案的布线基板中,也可以是,所述第2表面的表面粗糙度大于所述第1表面的表面粗糙度。采用该技术方案的布线基板,不会阻碍填底胶的流动性,能够利用毛细管现象使填底胶遍及第2表面上的各个部位。
本发明也能够通过除布线基板以外的各种形式实现。例如,能够通过包括布线基板的装置、制造布线基板的制造方法等形式实现。
附图说明
图1是示意性地表示第1实施方式的布线基板的结构的局部剖面图。
图2是示意性地表示安装有半导体芯片的布线基板的结构的局部剖面图。
图3是示意性地表示第2实施方式的布线基板的结构的局部剖面图。
图4是示意性地表示第3实施方式的布线基板的结构的局部剖面图。
图5是示意性地表示第4实施方式的布线基板的结构的局部剖面图。
具体实施方式
A.第1实施方式:图1是示意性地表示第1实施方式的布线基板10的结构的局部剖面图。图2是示意性地表示安装有半导体芯片20的布线基板10的结构的局部剖面图。布线基板10利用有机材料形成,是板状的构件,还被称作有机基板(organic基板)。在本实施方式中,如图2所示,布线基板10是构成为能够安装半导体芯片20的倒装芯片安装基板。
布线基板10包括基层120、导体层130和绝缘层140。在本实施方式中,布线基板10是通过在基层120之上形成导体层130之后,再在该导体层130之上形成绝缘层140而成的。在其他实施方式中,布线基板10既可以在基层120之上具有将多层导体层和多层绝缘层交替层叠而成的多层构造,也可以在基层120的两面均具有这样的多层构造。
在图1中示出了互相正交的XYZ轴。图1中的XYZ轴与其他图中的XYZ轴相对应。在图1中的XYZ轴中,将沿着绝缘层140相对于基层120的层叠方向的轴设为Z轴。在沿着Z轴的Z轴方向中,将自基层120朝向绝缘层140的方向设为+Z轴方向,将+Z轴方向的相反方向设为-Z轴方向。在图1中的XYZ轴中,将沿着与Z轴正交的层叠面方向的两个轴设为X轴和Y轴。在图1的说明中,在沿着X轴的X轴方向中,将自纸面左朝向纸面右的方向设为+X轴方向,将+X轴方向的相反方向设为-X轴方向。在图1的说明中,在沿着Y轴的Y轴方向中,将从纸面跟前侧朝向纸面里侧的方向设为+Y轴方向,将+Y轴方向的相反方向设为-Y轴方向。
布线基板10的基层120是由绝缘性材料形成的板状构件。在本实施方式中,基层120的绝缘性材料为热固化性树脂(例如,双马来酰亚胺三嗪树脂(Bismaleimide-TriazineResin,BT),环氧树脂等)。在其他实施方式中,基层120的绝缘性材料也可以是纤维增强树脂(例如,玻璃纤维增强环氧树脂等)。虽然在图1和图2中未图示,但在基层120的内部形成有导体(例如,通孔、穿孔等),该导体构成与导体层130连接的布线的一部分。
布线基板10的导体层130是由形成在基层120之上的导电性材料构成的导体图案。在本实施方式中,导体层130是通过将形成在基层120的表面之上的铜镀层蚀刻成期望的形状而形成的。导体层130包括自绝缘层140露出的连接端子132和被绝缘层140覆盖的内部布线136。
如图2所示,导体层130的连接端子132构成为能够借助软钎料SD与半导体芯片20的连接端子232相连接。在本实施方式中,在连接端子132的表面实施了镀敷处理。
布线基板10的绝缘层140是由绝缘性材料形成的层,该绝缘性材料也被称作阻焊剂。绝缘层140具有第1表面141和第2表面142。
绝缘层140的第1表面141是绝缘层140的形成有开口部150的表面。在本实施方式中,第1表面141是沿着X轴和Y轴朝向+Z轴方向侧的面,构成绝缘层140的+Z轴方向侧的表面。
绝缘层140的第2表面142是绝缘层140的在开口部150内侧的、相对于第1表面141向基层120侧凹陷的表面。导体层130的连接端子132自第2表面142露出,在本实施方式中,连接端子132自第2表面142向+Z轴方向侧突出。在本实施方式中,在第2表面142设有一个连接端子132。在其他实施方式中,也可以在第2表面142设有两个以上的连接端子132。
图1中的布线基板10的剖面是与Z轴和X轴平行的ZX平面。在ZX平面中,第2表面142形成在从第2表面142与第1表面141连接的连接点P1到第2表面142与连接端子132连接的连接点P2的整个范围内。
在图1中,在ZX平面上图示有点AP、法线NL、平行线PL和角度θ。点AP是构成形成在从连接点P1到连接点P2的整个范围内的第2表面142的任意点。法线NL是与第2表面142的在任意点AP处的切线垂直的线,是自任意点AP朝向绝缘层140的外侧(+Z轴方向)的线。平行线PL是自任意点AP以与第1表面141平行的方式朝向连接端子132的线。在本实施方式中,平行线PL是沿着X轴的线。在ZX平面中,第2表面142上的任意点AP处的法线NL与平行线PL所成的角度θ大于0°且小于90°。
在本实施方式中,第2表面142由曲面构成。在本实施方式中,第2表面142的靠第1表面141侧的部分由朝向绝缘层140的外侧(+Z轴方向)凸出的凸状曲面构成,第2表面142的靠连接端子132侧的部分由朝向绝缘层140的内侧(-Z轴方向)凹陷的凹状曲面构成。
在本实施方式中,第2表面142的表面粗糙度大于第1表面141的表面粗糙度。在本实施方式中,第2表面142的中心线平均粗糙度Ra为0.06μm~0.8μm(微米),第2表面142的十点平均粗糙度Rz为1.0μm~9.0μm。相对于这样的第2表面142的表面粗糙度,第1表面141的中心线平均粗糙度Ra为0.02μm~0.25μm,第1表面141的十点平均粗糙度Rz为0.6μm~5.0μm。
在本实施方式中,绝缘层140是通过在形成有导体层130的基层120之上涂布光固化型绝缘性树脂之后进行曝光、显影而形成的。绝缘层140的开口部150相当于在曝光时被掩膜的部分,将显影时未固化部分冲洗掉,从而形成绝缘层140的第2表面142。像这样,绝缘层140的第1表面141和第2表面142作为构成单层的部位形成为一体。在本实施方式中,第2表面142的形状和表面粗糙度能够通过对光固化型绝缘性树脂的材质,曝光时的掩膜的形状,以及曝光时的照射光的强度、照射时间和照射角度等进行调整来实现。
在向布线基板10安装半导体芯片20时,如图2所示,将连接端子132钎焊于半导体芯片20的连接端子232,并且向在开口部150中的半导体芯片20与第2表面142之间形成的间隙内填充填底胶30。
采用以上说明的第1实施方式,通过在第2表面142的各个部位将填底胶30的流动向连接端子132侧引导,从而能够使填底胶30的流动稳定化。其结果,能够抑制因填底胶30的填充不良而形成空隙。
另外,与第2表面142由平面构成的情况相比,由于第2表面142由曲面构成,因此第2表面142的与填底胶30接触的表面积增加,因此,能够提高第2表面142与填底胶30之间的密合性。并且,与第2表面142由平面构成的情况相比,绝缘层140的随着填底胶30的固化而产生的应力减小,因此能够抑制绝缘层140出现开裂(裂纹)。
B.第2实施方式:图3是示意性地表示第2实施方式的布线基板10B的结构的局部剖面图。在第2实施方式的说明中,对与第1实施方式相同的结构标注同一附图标记并省略说明。
对于第2实施方式的布线基板10B,除了第2表面142的形状不同这一点之外,其余的部分与第1实施方式的相同。第2实施方式的第2表面142由凹状曲面构成,该凹状曲面在从连接点P1到连接点P2的整个范围内朝向绝缘层140的内侧(-Z轴方向)凹陷,除此之外,第2实施方式的第2表面142的其余部分与第1实施方式的相同。在第2实施方式中,与第1实施方式同样地,在ZX平面中,第2表面142上的任意点AP处的法线NL与平行线PL所成的角度θ大于0°且小于90°。在第2实施方式中,角度θ随着任意点AP的位置从连接点P1朝向连接点P2移动而增大。
采用以上说明的第2实施方式,与第1实施方式同样地,能够抑制形成因填底胶30的填充不良而产生的空隙。另外,由于第2表面142由曲面构成,因此与第1实施方式同样地,能够提高第2表面142与填底胶30之间的密合性。另外,由于第2表面142由曲面构成,因此与第1实施方式同样地,能够抑制绝缘层140出现开裂。
C.第3实施方式:图4是示意性地表示第3实施方式的布线基板10C的结构的局部剖面图。在第3实施方式的说明中,对与第1实施方式相同的结构标注同一附图标记并省略说明。
对于第3实施方式的布线基板10C,除了第2表面142的形状不同这一点之外,其余的部分与第1实施方式的相同。第3实施方式的第2表面142由平面构成,除此之外,其余的部分与第1实施方式的相同。在第3实施方式中,第2表面142由从连接点P1到连接点P2的整个范围内的平面构成。
在第3实施方式中,与第1实施方式同样地,在ZX平面中,第2表面142上的任意点AP处的法线NL与平行线PL所成的角度θ大于0°且小于90°。在第3实施方式中,不管任意点AP的位置是从连接点P1到连接点P2的范围内的哪一位置,角度θ均保持不变。
采用以上说明的第3实施方式,与第1实施方式同样地,能够抑制形成因填底胶30的填充不良而产生的空隙。另外,与第2表面142由曲面构成的情况相比,填底胶30在第2表面142之上流动的距离缩短,因此能够缩短填充填底胶30所需要的时间。
D.第4实施方式:图5是示意性地表示第4实施方式的布线基板10D的结构的局部剖面图。在第4实施方式的说明中,对与第1实施方式相同的结构标注同一附图标记并省略说明。
对于第4实施方式的布线基板10D,除了第2表面142的形状不同这一点之外,其余的部分与第1实施方式的相同。第4实施方式的第2表面142由平面构成,除此之外,其余的部分与第1实施方式的相同。在第4实施方式中,第2表面142由从连接点P1到中间点MP的整个范围内的平面和从中间点MP到连接点P2的整个范围内的平面构成。中间点MP是第2表面142上的位于连接点P1与连接点P2之间的点。
在第4实施方式中,与第1实施方式同样地,在ZX平面中,第2表面142上的任意点AP处的法线NL与平行线PL所成的角度θ大于0°且小于90°。在第4实施方式中,与任意点AP的位置相对中间点MP而言靠连接点P1侧的情况相比,在任意点AP的位置相对中间点MP而言靠连接点P2侧的情况下,角度θ较大。
采用以上说明的第4实施方式,与第1实施方式同样地,能够抑制形成因填底胶30的填充不良而产生的空隙。另外,与第2表面142由曲面构成的情况相比,填底胶30在第2表面142上流动的距离缩短,因此能够缩短填充填底胶30所需要的时间。
E.其他实施方式:本发明并不限定于所述实施方式、实施例、变形例,能够在不脱离本发明的主旨的范围内通过各种结构实现。例如,为了解决所述问题的一部分或全部、或者为了达到所述效果的一部分或全部,能够适当地对与本发明的发明内容中记载的各技术方案中的技术特征相对应的实施方式、实施例、变形例中的技术特征进行调换、组合。并且,若这些技术特征未作为本说明书中必须的技术特征进行说明,则能够适当地删除。
对于第2表面142,只要满足0°<θ<90°,就能够以各种形状实现。例如,第2表面142也可以是在连接点P1与连接点P2之间具有3个以上拐点的曲面。另外,第2表面142也可以由在连接点P1与连接点P2之间角度θ的值不同的3个以上的平面构成。另外,第2表面142也可以是由曲面与平面的组合构成的形状。
附图标记说明
10、10B、10C、10D、布线基板;20、半导体芯片;30、填底胶;120、基层;130、导体层;132、连接端子;136、内部布线;140、绝缘层;141、第1表面;142、第2表面;150、开口部;232、连接端子;SD、软钎料;P1、连接点;P2、连接点;MP、中间点;AP、任意点;NL、法线;PL、平行线。
Claims (3)
1.一种布线基板,该布线基板包括:
基层,其具有绝缘性;
绝缘层,其层叠于所述基层,具有第1表面和第2表面,该第1表面形成有开口部,该第2表面在所述开口部的内侧相对于所述第1表面向所述基层侧凹陷;以及
连接端子,其具有导电性,在所述开口部的内侧自所述绝缘层突出,
在向该布线基板安装半导体芯片时,将所述连接端子钎焊于所述半导体芯片的连接端子,并且向在所述开口部中的所述半导体芯片与所述第2表面之间形成的间隙内填充填底胶,
该布线基板的特征在于,
所述第2表面在所述开口部的内侧形成在从所述第1表面到所述连接端子的整个范围内,
在沿着所述绝缘层相对于所述基层层叠的层叠方向的平面、即剖面中,自所述第2表面中的任意点朝向所述绝缘层外侧的法线、同自所述任意点以与所述第1表面平行的方式朝向所述连接端子的平行线所成的角度大于0°且小于90°,
所述第2表面的表面粗糙度大于所述第1表面的表面粗糙度。
2.根据权利要求1所述的布线基板,其特征在于,
所述第2表面由曲面构成。
3.根据权利要求1所述的布线基板,其特征在于,
所述第2表面由平面构成。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-184962 | 2012-08-24 | ||
JP2012184962 | 2012-08-24 | ||
JP2012-258208 | 2012-11-27 | ||
JP2012258208A JP5491605B1 (ja) | 2012-11-27 | 2012-11-27 | 配線基板 |
PCT/JP2013/004972 WO2014030355A1 (ja) | 2012-08-24 | 2013-08-23 | 配線基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104508810A CN104508810A (zh) | 2015-04-08 |
CN104508810B true CN104508810B (zh) | 2017-08-25 |
Family
ID=50149681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380038723.4A Active CN104508810B (zh) | 2012-08-24 | 2013-08-23 | 布线基板 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9538650B2 (zh) |
EP (1) | EP2846350A4 (zh) |
KR (1) | KR101642241B1 (zh) |
CN (1) | CN104508810B (zh) |
TW (1) | TWI536508B (zh) |
WO (1) | WO2014030355A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI542263B (zh) * | 2014-07-31 | 2016-07-11 | 恆勁科技股份有限公司 | 中介基板及其製法 |
US9520352B2 (en) * | 2014-12-10 | 2016-12-13 | Shinko Electric Industries Co., Ltd. | Wiring board and semiconductor device |
KR20160099381A (ko) * | 2015-02-12 | 2016-08-22 | 삼성전기주식회사 | 인쇄회로기판 및 인쇄회로기판의 제조 방법 |
JP2016207893A (ja) * | 2015-04-24 | 2016-12-08 | イビデン株式会社 | プリント配線板およびその製造方法 |
US9881858B2 (en) * | 2015-07-13 | 2018-01-30 | Micron Technology, Inc. | Solder bond site including an opening with discontinuous profile |
CN110537251B (zh) * | 2017-04-25 | 2023-07-04 | 三菱电机株式会社 | 半导体装置 |
JP7339603B2 (ja) * | 2019-08-30 | 2023-09-06 | ウシオ電機株式会社 | マイクロチップ |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5597983A (en) * | 1994-02-03 | 1997-01-28 | Sgs-Thomson Microelectronics, Inc. | Process of removing polymers in semiconductor vias |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1107979C (zh) | 1995-07-14 | 2003-05-07 | 松下电器产业株式会社 | 半导体器件的电极结构、形成方法及安装体和半导体器件 |
SE9602764L (sv) * | 1996-07-12 | 1997-10-06 | Jb Prominens Ab | Kudde |
JP3346263B2 (ja) | 1997-04-11 | 2002-11-18 | イビデン株式会社 | プリント配線板及びその製造方法 |
JP4066522B2 (ja) * | 1998-07-22 | 2008-03-26 | イビデン株式会社 | プリント配線板 |
KR20070086862A (ko) * | 1998-09-03 | 2007-08-27 | 이비덴 가부시키가이샤 | 다층프린트배선판 및 그 제조방법 |
EP1387604A1 (en) * | 2002-07-31 | 2004-02-04 | United Test Center Inc. | Bonding pads of printed circuit board capable of holding solder balls securely |
JP2004342989A (ja) * | 2003-05-19 | 2004-12-02 | Alps Electric Co Ltd | 電子回路基板 |
TWI231028B (en) | 2004-05-21 | 2005-04-11 | Via Tech Inc | A substrate used for fine-pitch semiconductor package and a method of the same |
JP2007059588A (ja) * | 2005-08-24 | 2007-03-08 | Kyocer Slc Technologies Corp | 配線基板の製造方法および配線基板 |
JP4747770B2 (ja) | 2005-10-04 | 2011-08-17 | 日立化成工業株式会社 | プリント配線板の製造方法、及び半導体チップ搭載基板の製造方法 |
JP4946225B2 (ja) | 2006-07-13 | 2012-06-06 | 株式会社村田製作所 | 多層セラミック電子部品、多層セラミック基板、および多層セラミック電子部品の製造方法 |
TWI331388B (en) * | 2007-01-25 | 2010-10-01 | Advanced Semiconductor Eng | Package substrate, method of fabricating the same and chip package |
KR100850243B1 (ko) * | 2007-07-26 | 2008-08-04 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
JP2009152317A (ja) | 2007-12-19 | 2009-07-09 | Panasonic Corp | 半導体装置およびその製造方法 |
JP5295593B2 (ja) * | 2008-03-13 | 2013-09-18 | パナソニック株式会社 | 半導体装置 |
JP5117371B2 (ja) | 2008-12-24 | 2013-01-16 | 新光電気工業株式会社 | 半導体装置およびその製造方法 |
JP5388676B2 (ja) * | 2008-12-24 | 2014-01-15 | イビデン株式会社 | 電子部品内蔵配線板 |
TWI367697B (en) * | 2009-08-17 | 2012-07-01 | Nan Ya Printed Circuit Board | Printed circuit board and fabrication method thereof |
JP5444050B2 (ja) | 2010-03-12 | 2014-03-19 | 三菱製紙株式会社 | ソルダーレジストパターンの形成方法 |
JP5479233B2 (ja) * | 2010-06-04 | 2014-04-23 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
JP2012164934A (ja) * | 2011-02-09 | 2012-08-30 | Mitsubishi Electric Corp | 回路モジュール、電子部品実装基板および回路モジュールの製造方法 |
-
2013
- 2013-08-22 TW TW102129999A patent/TWI536508B/zh not_active IP Right Cessation
- 2013-08-23 WO PCT/JP2013/004972 patent/WO2014030355A1/ja active Application Filing
- 2013-08-23 CN CN201380038723.4A patent/CN104508810B/zh active Active
- 2013-08-23 KR KR1020157006916A patent/KR101642241B1/ko active IP Right Grant
- 2013-08-23 US US14/416,116 patent/US9538650B2/en active Active
- 2013-08-23 EP EP13830722.8A patent/EP2846350A4/en not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5597983A (en) * | 1994-02-03 | 1997-01-28 | Sgs-Thomson Microelectronics, Inc. | Process of removing polymers in semiconductor vias |
Also Published As
Publication number | Publication date |
---|---|
TWI536508B (zh) | 2016-06-01 |
US9538650B2 (en) | 2017-01-03 |
CN104508810A (zh) | 2015-04-08 |
EP2846350A1 (en) | 2015-03-11 |
TW201419459A (zh) | 2014-05-16 |
US20150223332A1 (en) | 2015-08-06 |
KR20150046177A (ko) | 2015-04-29 |
KR101642241B1 (ko) | 2016-07-22 |
WO2014030355A1 (ja) | 2014-02-27 |
EP2846350A4 (en) | 2015-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104508810B (zh) | 布线基板 | |
US10535581B2 (en) | Module for heat generating electronic component | |
JP6506719B2 (ja) | 超小型放熱器を備えたプリント回路基板の製造方法 | |
TWI480987B (zh) | 在核心中具有電鍍通孔(pth)的設備及系統,和製作電鍍通孔(pth)於核心中的方法 | |
US20130155639A1 (en) | Electronic component and method for manufacturing the same | |
US20140291859A1 (en) | Electronic component built-in substrate and method of manufacturing the same | |
US20100155109A1 (en) | Flex-rigid wiring board and method for manufacturing the same | |
US10128198B2 (en) | Double side via last method for double embedded patterned substrate | |
JP2012182437A (ja) | 配線基板及びその製造方法 | |
TW201436660A (zh) | 多層基板及其製造方法 | |
US10433414B2 (en) | Manufacturing method of printing circuit board with micro-radiators | |
KR102155104B1 (ko) | 전자 모듈 및 전자 모듈의 제조 방법 | |
KR102078009B1 (ko) | 인쇄회로기판 및 그 제조방법 | |
US10211119B2 (en) | Electronic component built-in substrate and electronic device | |
CN103907180B (zh) | 布线基板 | |
US8125074B2 (en) | Laminated substrate for an integrated circuit BGA package and printed circuit boards | |
TWI492678B (zh) | Wiring substrate and manufacturing method thereof | |
JP5491605B1 (ja) | 配線基板 | |
US20170094786A1 (en) | Printed circuit board and method of manufacturing the same | |
KR20160103270A (ko) | 인쇄회로기판 및 그 제조방법 | |
TWI569392B (zh) | 凹槽式載板製造方法 | |
TWM598520U (zh) | 通孔中有橋結構、利用可靠性增強參數組合的部件承載件 | |
WO2015107616A1 (ja) | 回路基板及びその製造方法、並びに電子装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |