CN104425701B - 发光装置 - Google Patents

发光装置 Download PDF

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Publication number
CN104425701B
CN104425701B CN201410424943.7A CN201410424943A CN104425701B CN 104425701 B CN104425701 B CN 104425701B CN 201410424943 A CN201410424943 A CN 201410424943A CN 104425701 B CN104425701 B CN 104425701B
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CN
China
Prior art keywords
light
resin
emitting device
recess portion
light emitting
Prior art date
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Active
Application number
CN201410424943.7A
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English (en)
Chinese (zh)
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CN104425701A (zh
Inventor
冈久强志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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Publication date
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Publication of CN104425701A publication Critical patent/CN104425701A/zh
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Publication of CN104425701B publication Critical patent/CN104425701B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
CN201410424943.7A 2013-08-29 2014-08-26 发光装置 Active CN104425701B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013177773A JP6236999B2 (ja) 2013-08-29 2013-08-29 発光装置
JP2013-177773 2013-08-29

Publications (2)

Publication Number Publication Date
CN104425701A CN104425701A (zh) 2015-03-18
CN104425701B true CN104425701B (zh) 2019-06-18

Family

ID=51417185

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410424943.7A Active CN104425701B (zh) 2013-08-29 2014-08-26 发光装置

Country Status (6)

Country Link
US (2) US10109779B2 (enExample)
EP (1) EP2843718B1 (enExample)
JP (1) JP6236999B2 (enExample)
KR (1) KR102161069B1 (enExample)
CN (1) CN104425701B (enExample)
TW (1) TWI680592B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3709374B1 (en) * 2015-05-29 2022-08-03 Nichia Corporation Light emitting device
KR102674066B1 (ko) * 2016-11-11 2024-06-13 삼성전자주식회사 발광 소자 패키지
KR102406913B1 (ko) * 2017-03-27 2022-06-10 서울반도체 주식회사 발광 모듈
DE102017116279B4 (de) * 2017-07-19 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Vielzahl von Konversionselementen und optoelektronisches Bauelement
CN112490224B (zh) * 2020-11-27 2025-04-08 广东晶科电子股份有限公司 一种发光装置及制作方法
TWI821731B (zh) * 2021-08-23 2023-11-11 啟端光電股份有限公司 底部發光型發光二極體顯示器

Citations (3)

* Cited by examiner, † Cited by third party
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JP2006269448A (ja) * 2005-03-22 2006-10-05 Stanley Electric Co Ltd Ｌｅｄ
CN101164379A (zh) * 2005-04-19 2008-04-16 皇家飞利浦电子股份有限公司 包括红色发射陶瓷发光转换器的照明系统
CN101925665A (zh) * 2008-01-21 2010-12-22 日亚化学工业株式会社 发光装置

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TWI292961B (en) * 2002-09-05 2008-01-21 Nichia Corp Semiconductor device and an optical device using the semiconductor device
DE102004021233A1 (de) 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung
TWI302041B (en) * 2006-01-19 2008-10-11 Everlight Electronics Co Ltd Light emitting diode packaging structure
JP4857791B2 (ja) * 2006-02-01 2012-01-18 日亜化学工業株式会社 半導体装置の製造方法
WO2007108616A1 (en) * 2006-03-17 2007-09-27 Seoul Semiconductor Co., Ltd. Side-view light emitting diode package having a reflector
JP4952215B2 (ja) * 2006-08-17 2012-06-13 日亜化学工業株式会社 発光装置
JP5205773B2 (ja) 2006-11-07 2013-06-05 日亜化学工業株式会社 発光装置
JP2008187030A (ja) 2007-01-30 2008-08-14 Stanley Electric Co Ltd 発光装置
JP5132961B2 (ja) * 2007-03-19 2013-01-30 ハリソン東芝ライティング株式会社 光半導体装置及びその製造方法
KR101374895B1 (ko) * 2007-03-31 2014-03-17 서울반도체 주식회사 측면 발광형 ｌｅｄ 패키지 및 그 제조방법
JP2009032746A (ja) * 2007-07-24 2009-02-12 Harison Toshiba Lighting Corp 発光装置及び発光ユニット
JP2009038184A (ja) * 2007-08-01 2009-02-19 Harison Toshiba Lighting Corp 半導体発光装置、光源装置及び面状発光装置
US8360593B2 (en) * 2007-09-28 2013-01-29 Seoul Semiconductor Co., Ltd. LED package and back light unit using the same
JP5277610B2 (ja) * 2007-10-29 2013-08-28 日亜化学工業株式会社 発光装置及び面発光装置並びに発光装置用パッケージ
WO2009075530A2 (en) 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semiconductor and manufacturing method thereof
JP2010003743A (ja) 2008-06-18 2010-01-07 Toshiba Corp 発光装置
KR101537797B1 (ko) * 2008-06-26 2015-07-22 서울반도체 주식회사 발광장치
JP5294741B2 (ja) 2008-07-14 2013-09-18 日亜化学工業株式会社 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法
TWI456784B (zh) 2008-07-29 2014-10-11 日亞化學工業股份有限公司 發光裝置
DE102008049399B4 (de) * 2008-09-29 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement, optoelektronische Vorrichtung und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP4808244B2 (ja) 2008-12-09 2011-11-02 スタンレー電気株式会社 半導体発光装置およびその製造方法
US8097894B2 (en) 2009-07-23 2012-01-17 Koninklijke Philips Electronics N.V. LED with molded reflective sidewall coating
JP5496570B2 (ja) * 2009-08-05 2014-05-21 シャープ株式会社 発光装置
JP5251788B2 (ja) * 2009-08-25 2013-07-31 豊田合成株式会社 サイドビュータイプの発光装置及びその製造方法
JP5482098B2 (ja) * 2009-10-26 2014-04-23 日亜化学工業株式会社 発光装置
US8581287B2 (en) 2011-01-24 2013-11-12 Stanley Electric Co., Ltd. Semiconductor light emitting device having a reflective material, wavelength converting layer and optical plate with rough and plane surface regions, and method of manufacturing
JP5744643B2 (ja) 2011-06-28 2015-07-08 シチズン電子株式会社 発光装置の製造方法
JP2013077679A (ja) 2011-09-30 2013-04-25 Citizen Electronics Co Ltd 半導体発光装置とその製造方法
US9236524B2 (en) * 2012-07-18 2016-01-12 Semicon Light Co., Ltd. Method of manufacturing semiconductor light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006269448A (ja) * 2005-03-22 2006-10-05 Stanley Electric Co Ltd Ｌｅｄ
CN101164379A (zh) * 2005-04-19 2008-04-16 皇家飞利浦电子股份有限公司 包括红色发射陶瓷发光转换器的照明系统
CN101925665A (zh) * 2008-01-21 2010-12-22 日亚化学工业株式会社 发光装置

Also Published As

Publication number Publication date
EP2843718A1 (en) 2015-03-04
KR102161069B1 (ko) 2020-09-29
JP6236999B2 (ja) 2017-11-29
US20190027663A1 (en) 2019-01-24
JP2015046534A (ja) 2015-03-12
US20150060921A1 (en) 2015-03-05
US10622529B2 (en) 2020-04-14
US10109779B2 (en) 2018-10-23
TWI680592B (zh) 2019-12-21
TW201513406A (zh) 2015-04-01
EP2843718B1 (en) 2017-11-29
CN104425701A (zh) 2015-03-18
KR20150026858A (ko) 2015-03-11

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