TWI680592B - 發光裝置 - Google Patents

發光裝置 Download PDF

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Publication number
TWI680592B
TWI680592B TW103127339A TW103127339A TWI680592B TW I680592 B TWI680592 B TW I680592B TW 103127339 A TW103127339 A TW 103127339A TW 103127339 A TW103127339 A TW 103127339A TW I680592 B TWI680592 B TW I680592B
Authority
TW
Taiwan
Prior art keywords
light
emitting element
emitting device
molded body
lead
Prior art date
Application number
TW103127339A
Other languages
English (en)
Chinese (zh)
Other versions
TW201513406A (zh
Inventor
岡久強志
Tsuyoshi Okahisa
Original Assignee
日亞化學工業股份有限公司
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日亞化學工業股份有限公司, Nichia Corporation filed Critical 日亞化學工業股份有限公司
Publication of TW201513406A publication Critical patent/TW201513406A/zh
Application granted granted Critical
Publication of TWI680592B publication Critical patent/TWI680592B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
TW103127339A 2013-08-29 2014-08-08 發光裝置 TWI680592B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013177773A JP6236999B2 (ja) 2013-08-29 2013-08-29 発光装置
JP2013-177773 2013-08-29

Publications (2)

Publication Number Publication Date
TW201513406A TW201513406A (zh) 2015-04-01
TWI680592B true TWI680592B (zh) 2019-12-21

Family

ID=51417185

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103127339A TWI680592B (zh) 2013-08-29 2014-08-08 發光裝置

Country Status (6)

Country Link
US (2) US10109779B2 (enExample)
EP (1) EP2843718B1 (enExample)
JP (1) JP6236999B2 (enExample)
KR (1) KR102161069B1 (enExample)
CN (1) CN104425701B (enExample)
TW (1) TWI680592B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10374134B2 (en) * 2015-05-29 2019-08-06 Nichia Corporation Light emitting device, method of manufacturing covering member, and method of manufacturing light emitting device
KR102674066B1 (ko) * 2016-11-11 2024-06-13 삼성전자주식회사 발광 소자 패키지
KR102406913B1 (ko) * 2017-03-27 2022-06-10 서울반도체 주식회사 발광 모듈
DE102017116279B4 (de) 2017-07-19 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Vielzahl von Konversionselementen und optoelektronisches Bauelement
CN112490224B (zh) * 2020-11-27 2025-04-08 广东晶科电子股份有限公司 一种发光装置及制作方法
TWI821731B (zh) * 2021-08-23 2023-11-11 啟端光電股份有限公司 底部發光型發光二極體顯示器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008187030A (ja) * 2007-01-30 2008-08-14 Stanley Electric Co Ltd 発光装置
JP2008235469A (ja) * 2007-03-19 2008-10-02 Harison Toshiba Lighting Corp 光半導体装置及びその製造方法
JP2010003743A (ja) * 2008-06-18 2010-01-07 Toshiba Corp 発光装置
JP2012533902A (ja) * 2009-07-23 2012-12-27 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー モールドされた反射側壁コーティングを備える発光ダイオード

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TWI292961B (en) * 2002-09-05 2008-01-21 Nichia Corp Semiconductor device and an optical device using the semiconductor device
DE102004021233A1 (de) 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung
JP2006269448A (ja) * 2005-03-22 2006-10-05 Stanley Electric Co Ltd Ｌｅｄ
CN100486397C (zh) * 2005-04-19 2009-05-06 皇家飞利浦电子股份有限公司 包括红色发射陶瓷发光转换器的照明系统
TWI302041B (en) * 2006-01-19 2008-10-11 Everlight Electronics Co Ltd Light emitting diode packaging structure
JP4857791B2 (ja) * 2006-02-01 2012-01-18 日亜化学工業株式会社 半導体装置の製造方法
TWI331815B (en) * 2006-03-17 2010-10-11 Seoul Semiconductor Co Ltd Side-view light emitting diode package having a reflector
JP4952215B2 (ja) * 2006-08-17 2012-06-13 日亜化学工業株式会社 発光装置
JP5205773B2 (ja) 2006-11-07 2013-06-05 日亜化学工業株式会社 発光装置
KR101374895B1 (ko) * 2007-03-31 2014-03-17 서울반도체 주식회사 측면 발광형 ｌｅｄ 패키지 및 그 제조방법
JP2009032746A (ja) * 2007-07-24 2009-02-12 Harison Toshiba Lighting Corp 発光装置及び発光ユニット
JP2009038184A (ja) * 2007-08-01 2009-02-19 Harison Toshiba Lighting Corp 半導体発光装置、光源装置及び面状発光装置
DE112008002540B4 (de) * 2007-09-28 2024-02-08 Seoul Semiconductor Co., Ltd. LED-Gehäuse und Hintergrundbeleuchtungseinheit unter Verwendung desselben
JP5277610B2 (ja) * 2007-10-29 2013-08-28 日亜化学工業株式会社 発光装置及び面発光装置並びに発光装置用パッケージ
WO2009075530A2 (en) 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semiconductor and manufacturing method thereof
EP2246409B1 (en) * 2008-01-21 2014-04-16 Nichia Corporation Light emitting apparatus
KR101537797B1 (ko) * 2008-06-26 2015-07-22 서울반도체 주식회사 발광장치
JP5294741B2 (ja) 2008-07-14 2013-09-18 日亜化学工業株式会社 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法
TWI456784B (zh) 2008-07-29 2014-10-11 日亞化學工業股份有限公司 發光裝置
DE102008049399B4 (de) * 2008-09-29 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement, optoelektronische Vorrichtung und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP4808244B2 (ja) 2008-12-09 2011-11-02 スタンレー電気株式会社 半導体発光装置およびその製造方法
JP5496570B2 (ja) * 2009-08-05 2014-05-21 シャープ株式会社 発光装置
JP5251788B2 (ja) * 2009-08-25 2013-07-31 豊田合成株式会社 サイドビュータイプの発光装置及びその製造方法
JP5482098B2 (ja) * 2009-10-26 2014-04-23 日亜化学工業株式会社 発光装置
US8581287B2 (en) 2011-01-24 2013-11-12 Stanley Electric Co., Ltd. Semiconductor light emitting device having a reflective material, wavelength converting layer and optical plate with rough and plane surface regions, and method of manufacturing
JP5744643B2 (ja) 2011-06-28 2015-07-08 シチズン電子株式会社 発光装置の製造方法
JP2013077679A (ja) 2011-09-30 2013-04-25 Citizen Electronics Co Ltd 半導体発光装置とその製造方法
CN103975451B (zh) * 2012-07-18 2016-10-12 世迈克琉明有限公司 制造半导体发光器件的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008187030A (ja) * 2007-01-30 2008-08-14 Stanley Electric Co Ltd 発光装置
JP2008235469A (ja) * 2007-03-19 2008-10-02 Harison Toshiba Lighting Corp 光半導体装置及びその製造方法
JP2010003743A (ja) * 2008-06-18 2010-01-07 Toshiba Corp 発光装置
JP2012533902A (ja) * 2009-07-23 2012-12-27 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー モールドされた反射側壁コーティングを備える発光ダイオード

Also Published As

Publication number Publication date
US10622529B2 (en) 2020-04-14
KR20150026858A (ko) 2015-03-11
KR102161069B1 (ko) 2020-09-29
US10109779B2 (en) 2018-10-23
EP2843718A1 (en) 2015-03-04
TW201513406A (zh) 2015-04-01
JP6236999B2 (ja) 2017-11-29
US20190027663A1 (en) 2019-01-24
CN104425701A (zh) 2015-03-18
US20150060921A1 (en) 2015-03-05
JP2015046534A (ja) 2015-03-12
CN104425701B (zh) 2019-06-18
EP2843718B1 (en) 2017-11-29

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