CN104396033B - Led的集体制造的方法及led的集体制造的结构 - Google Patents
Led的集体制造的方法及led的集体制造的结构 Download PDFInfo
- Publication number
- CN104396033B CN104396033B CN201380032606.7A CN201380032606A CN104396033B CN 104396033 B CN104396033 B CN 104396033B CN 201380032606 A CN201380032606 A CN 201380032606A CN 104396033 B CN104396033 B CN 104396033B
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- material layer
- basic
- contact pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 239000004020 conductor Substances 0.000 claims abstract description 42
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 15
- 239000011810 insulating material Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 36
- 239000012774 insulation material Substances 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 21
- 238000005498 polishing Methods 0.000 claims description 8
- 230000013011 mating Effects 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000002305 electric material Substances 0.000 claims 1
- 238000005194 fractionation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 174
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 8
- 229910052906 cristobalite Inorganic materials 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 229910052682 stishovite Inorganic materials 0.000 description 8
- 229910052905 tridymite Inorganic materials 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000003486 chemical etching Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000000227 grinding Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Led Devices (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1255934 | 2012-06-22 | ||
FR1255931A FR2992465B1 (fr) | 2012-06-22 | 2012-06-22 | Procede de fabrication collective de leds et structure pour la fabrication collective de leds |
FR1255931 | 2012-06-22 | ||
FR1255934A FR2992466A1 (fr) | 2012-06-22 | 2012-06-22 | Procede de realisation de contact pour led et structure resultante |
PCT/EP2013/062658 WO2013189949A1 (en) | 2012-06-22 | 2013-06-18 | Method of collective manufacture of leds and structure for collective manufacture of leds. |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104396033A CN104396033A (zh) | 2015-03-04 |
CN104396033B true CN104396033B (zh) | 2017-07-18 |
Family
ID=48656041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380032606.7A Active CN104396033B (zh) | 2012-06-22 | 2013-06-18 | Led的集体制造的方法及led的集体制造的结构 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20150155331A1 (ja) |
EP (1) | EP2865021B1 (ja) |
JP (1) | JP6103276B2 (ja) |
KR (1) | KR102011351B1 (ja) |
CN (1) | CN104396033B (ja) |
FR (1) | FR2992465B1 (ja) |
TW (1) | TWI518954B (ja) |
WO (1) | WO2013189949A1 (ja) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8816383B2 (en) * | 2012-07-06 | 2014-08-26 | Invensas Corporation | High performance light emitting diode with vias |
FR3007580B1 (fr) * | 2013-06-25 | 2016-10-21 | Commissariat Energie Atomique | Dispositif optoelectronique a reflectivite amelioree |
DE102014102029A1 (de) * | 2014-02-18 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement |
FR3023061B1 (fr) * | 2014-06-27 | 2017-12-15 | Commissariat Energie Atomique | Diode de structure mesa a surface de contact sensiblement plane |
FR3023065B1 (fr) * | 2014-06-27 | 2017-12-15 | Commissariat Energie Atomique | Dispositif optoelectronique a jonction p-n permettant une ionisation de dopants par effet de champ |
CN106716641B (zh) * | 2014-10-17 | 2021-07-09 | 英特尔公司 | 微型led显示器和组装 |
CN106716611B (zh) | 2014-10-17 | 2019-08-20 | 英特尔公司 | 微拾取和键合组装 |
FR3042913B1 (fr) * | 2015-10-22 | 2019-07-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Diode micro-electronique a surface active optimisee |
DE102015121056A1 (de) | 2015-12-03 | 2017-06-08 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl von Bauelementen und Bauelement |
FR3046298B1 (fr) * | 2015-12-23 | 2018-01-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique d’emission de lumiere |
FR3046247B1 (fr) * | 2015-12-28 | 2018-06-15 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Circuit integre pour detection d’un defaut d’isolation avec une armature conductrice |
US10734439B2 (en) * | 2016-05-13 | 2020-08-04 | Commissariat à l'énergie atomique et aux énergies alternatives | Method for producing an optoelectronic device comprising a plurality of gallium nitride diodes |
FR3056825B1 (fr) | 2016-09-29 | 2019-04-26 | Soitec | Structure comprenant des ilots semi-conducteurs monocristallins, procede de fabrication d'une telle structure |
JP2019537255A (ja) * | 2016-11-22 | 2019-12-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 少なくとも1つのオプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 |
FR3061357B1 (fr) * | 2016-12-27 | 2019-05-24 | Aledia | Procede de realisation d’un dispositif optoelectronique comportant une etape de gravure de la face arriere du substrat de croissance |
CN110447100B (zh) | 2017-03-17 | 2023-07-18 | 索泰克公司 | 用于形成光电器件的生长基板、制造该基板的方法以及该基板特别是在微显示器领域的使用 |
FR3079071B1 (fr) | 2018-03-13 | 2020-02-28 | Soitec | Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins prensentant une variete de parametres de maille |
FR3079070B1 (fr) | 2018-03-13 | 2020-02-28 | Soitec | Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins presentant une variete de parametres de maille |
FR3064108B1 (fr) | 2017-03-17 | 2022-12-30 | Soitec Silicon On Insulator | Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage |
FR3066317B1 (fr) | 2017-05-09 | 2020-02-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un dispositif d'affichage emissif a led |
DE102017117414A1 (de) | 2017-08-01 | 2019-02-07 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement |
KR102419593B1 (ko) * | 2017-10-23 | 2022-07-12 | 삼성전자주식회사 | 발광 다이오드 및 그의 제조 방법 |
FR3076170B1 (fr) * | 2017-12-22 | 2020-05-15 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de report de structures electroluminescentes |
US10615305B1 (en) * | 2018-04-20 | 2020-04-07 | Facebook Technologies, Llc | Self-alignment of micro light emitting diode using planarization |
US11342479B2 (en) * | 2018-09-11 | 2022-05-24 | Facebook Technologies, Llc | Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing |
US11245051B2 (en) | 2018-10-12 | 2022-02-08 | Boe Technology Group Co., Ltd. | Micro light emitting diode apparatus and fabricating method thereof |
FR3087580B1 (fr) * | 2018-10-23 | 2020-12-18 | Aledia | Procede de realisation d’un dispositif optoelectronique comprenant des diodes electroluminescentes homogenes en dimensions |
FR3088478B1 (fr) | 2018-11-08 | 2020-10-30 | Soitec Silicon On Insulator | Procede de fabrication collective d'une pluralite de structures semi-conductrices |
FR3091622B1 (fr) | 2019-01-09 | 2021-09-17 | Soitec Silicon On Insulator | Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN |
FR3093862B1 (fr) * | 2019-03-11 | 2022-07-29 | Soitec Silicon On Insulator | Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN |
KR102275367B1 (ko) * | 2019-08-21 | 2021-07-13 | 주식회사 에스엘바이오닉스 | 반도체 발광소자 및 이의 제조방법 |
FR3102613A1 (fr) | 2019-10-28 | 2021-04-30 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d’une diode photo-emettrice ou photo-receptrice |
GB2593693B (en) * | 2020-03-30 | 2022-08-03 | Plessey Semiconductors Ltd | LED precursor |
FR3127072B1 (fr) * | 2021-09-14 | 2023-08-04 | Commissariat Energie Atomique | Procédé de fabrication d’une diode semiconductrice par gravures sèche et humide |
US20230155065A1 (en) * | 2021-11-12 | 2023-05-18 | Lumileds Llc | Composite cathode contact for monolithically integrated micro-leds, mini-leds and led arrays |
US20230154969A1 (en) * | 2021-11-12 | 2023-05-18 | Lumileds Llc | Composite cathode contact with spacer layer for monolithically integrated micro-leds, mini-leds, and led arrays |
US20230155066A1 (en) * | 2021-11-12 | 2023-05-18 | Lumileds Llc | Composite cathode contact with spacer layer for monolithically integrated micro-leds, mini-leds, and led arrays |
JP7406292B1 (ja) | 2023-07-27 | 2023-12-27 | アルディーテック株式会社 | マイクロ発光ダイオードチップ、マイクロ発光ダイオードチップの製造方法、マイクロ発光ダイオードチップ転写用基板、マイクロ発光ダイオードチップ転写用基板の製造方法、マイクロ発光ダイオードディスプレイおよびxrグラス |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2390933A1 (en) * | 2010-05-24 | 2011-11-30 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
CN102290524A (zh) * | 2011-09-21 | 2011-12-21 | 晶科电子(广州)有限公司 | 一种led器件及其led模组器件 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2839077B2 (ja) * | 1995-06-15 | 1998-12-16 | 日本電気株式会社 | 窒化ガリウム系化合物半導体発光素子 |
US5543643A (en) * | 1995-07-13 | 1996-08-06 | Lsi Logic Corporation | Combined JFET and MOS transistor device, circuit |
US6281524B1 (en) * | 1997-02-21 | 2001-08-28 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
CN1292494C (zh) * | 2000-04-26 | 2006-12-27 | 奥斯兰姆奥普托半导体有限责任公司 | 发光半导体元件及其制造方法 |
US7683377B2 (en) * | 2003-07-16 | 2010-03-23 | Panasonic Corporation | Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same |
FR2863405B1 (fr) * | 2003-12-08 | 2006-02-03 | Commissariat Energie Atomique | Collage moleculaire de composants microelectroniques sur un film polymere |
US7122840B2 (en) * | 2004-06-17 | 2006-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor with optical guard ring and fabrication method thereof |
FR2879183B1 (fr) * | 2004-12-15 | 2007-04-27 | Atmel Grenoble Soc Par Actions | Procede de fabrication collective de microstructures a elements superposes |
TWI244228B (en) * | 2005-02-03 | 2005-11-21 | United Epitaxy Co Ltd | Light emitting device and manufacture method thereof |
US7592637B2 (en) * | 2005-06-17 | 2009-09-22 | Goldeneye, Inc. | Light emitting diodes with reflective electrode and side electrode |
CN101479858B (zh) * | 2006-05-01 | 2011-05-11 | 三菱化学株式会社 | 集成型半导体发光装置及其制造方法 |
EP2111640B1 (en) * | 2007-01-22 | 2019-05-08 | Cree, Inc. | Fault tolerant light emitter and method of fabricating the same |
KR100928259B1 (ko) * | 2007-10-15 | 2009-11-24 | 엘지전자 주식회사 | 발광 장치 및 그 제조방법 |
JP5228442B2 (ja) * | 2007-10-29 | 2013-07-03 | 三菱化学株式会社 | 集積型発光源およびその製造方法 |
US8779445B2 (en) * | 2008-07-02 | 2014-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stress-alleviation layer for LED structures |
US7868379B2 (en) * | 2008-12-17 | 2011-01-11 | Semiconductor Components Industries, Llc | Electronic device including a trench and a conductive structure therein |
KR101533817B1 (ko) * | 2008-12-31 | 2015-07-09 | 서울바이오시스 주식회사 | 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
JP4686625B2 (ja) * | 2009-08-03 | 2011-05-25 | 株式会社東芝 | 半導体発光装置の製造方法 |
KR101650518B1 (ko) * | 2010-09-13 | 2016-08-23 | 에피스타 코포레이션 | 발광 구조체 |
FR2965398B1 (fr) * | 2010-09-23 | 2012-10-12 | Soitec Silicon On Insulator | Procédé de collage par adhésion moléculaire avec réduction de desalignement de type overlay |
US9070851B2 (en) * | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
JP4778107B1 (ja) * | 2010-10-19 | 2011-09-21 | 有限会社ナプラ | 発光デバイス、及び、その製造方法 |
TWI414004B (zh) * | 2010-10-25 | 2013-11-01 | Univ Nat Chiao Tung | 具有氮化鎵層的多層結構基板及其製法 |
US9673363B2 (en) * | 2011-01-31 | 2017-06-06 | Cree, Inc. | Reflective mounting substrates for flip-chip mounted horizontal LEDs |
US8629531B2 (en) * | 2011-02-18 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method to reduce wafer warp for gallium nitride on silicon wafer |
-
2012
- 2012-06-22 FR FR1255931A patent/FR2992465B1/fr active Active
-
2013
- 2013-06-18 EP EP13729948.3A patent/EP2865021B1/en active Active
- 2013-06-18 JP JP2015517733A patent/JP6103276B2/ja active Active
- 2013-06-18 WO PCT/EP2013/062658 patent/WO2013189949A1/en active Application Filing
- 2013-06-18 CN CN201380032606.7A patent/CN104396033B/zh active Active
- 2013-06-18 US US14/409,650 patent/US20150155331A1/en not_active Abandoned
- 2013-06-18 KR KR1020147036042A patent/KR102011351B1/ko active IP Right Grant
- 2013-06-21 TW TW102122240A patent/TWI518954B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2390933A1 (en) * | 2010-05-24 | 2011-11-30 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
CN102290524A (zh) * | 2011-09-21 | 2011-12-21 | 晶科电子(广州)有限公司 | 一种led器件及其led模组器件 |
Also Published As
Publication number | Publication date |
---|---|
EP2865021A1 (en) | 2015-04-29 |
FR2992465B1 (fr) | 2015-03-20 |
CN104396033A (zh) | 2015-03-04 |
EP2865021B1 (en) | 2017-02-01 |
TW201405891A (zh) | 2014-02-01 |
TWI518954B (zh) | 2016-01-21 |
KR20150032946A (ko) | 2015-03-31 |
JP2015524173A (ja) | 2015-08-20 |
JP6103276B2 (ja) | 2017-03-29 |
FR2992465A1 (fr) | 2013-12-27 |
KR102011351B1 (ko) | 2019-10-21 |
US20150155331A1 (en) | 2015-06-04 |
WO2013189949A1 (en) | 2013-12-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104396033B (zh) | Led的集体制造的方法及led的集体制造的结构 | |
TWI493761B (zh) | 製造LEDs或太陽能電池結構之方法 | |
KR20240091148A (ko) | 확산 베리어 및 그 형성 방법 | |
TWI388050B (zh) | 半導體裝置的製造方法、半導體裝置以及晶圓 | |
US9105714B2 (en) | Stabilization structure including sacrificial release layer and staging bollards | |
US9444010B2 (en) | Process for forming light-emitting diodes | |
CN105637636B (zh) | 用于制造光电子半导体器件的方法和光电子半导体器件 | |
US20140159065A1 (en) | Stabilization structure including sacrificial release layer and staging cavity | |
TWI569305B (zh) | 用於形成微帶傳輸線於薄矽晶絕緣體晶片上的方法及結構 | |
US11328927B2 (en) | System for integration of elemental and compound semiconductors on a ceramic substrate | |
CN112701137A (zh) | 包括led的发射显示装置 | |
JP7418583B2 (ja) | モノリシック発光ダイオード前駆体を形成する方法 | |
KR102328383B1 (ko) | 광전자 반도체 칩을 제조하기 위한 방법, 및 광전자 반도체 칩 | |
US7687316B2 (en) | Method for adhering semiconductor devices | |
JP2023543475A (ja) | 光電子デバイス | |
WO2022017972A1 (fr) | Dispositif optoelectronique flexible et son procede de fabrication | |
US11239402B2 (en) | Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component | |
US20070041680A1 (en) | Process for assembling passive and active components and corresponding integrated circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |