CN104395690B - Film thickness measurement device and film formation device - Google Patents

Film thickness measurement device and film formation device Download PDF

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Publication number
CN104395690B
CN104395690B CN201280073820.2A CN201280073820A CN104395690B CN 104395690 B CN104395690 B CN 104395690B CN 201280073820 A CN201280073820 A CN 201280073820A CN 104395690 B CN104395690 B CN 104395690B
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optical fiber
substrate
light
film
face
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CN104395690A (en
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佐井旭阳
日向阳平
大泷芳幸
姜友松
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Shincron Co Ltd
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Shincron Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Offer can accurately measure the film thickness measurement device of blooming.Film thickness measurement device (6) possesses：By irradiating light projector (11) of the optical fiber (f1) to monitoring substrate (Sm) irradiation light,The infrared rays receiver (22) of the light reflected by monitoring substrate (Sm) after light optical fiber (f2) is received and irradiated from light projector (11),The optical pickocff probe (13) formed with multiple irradiations optical fiber (f1) and multiple light optical fiber (f2) is tied up,Wherein,The end face of multiple irradiations optical fiber (f1) and the end face of multiple light optical fiber (f2) are each configured with the terminal surface opposed with monitoring substrate (Sm) of optical pickocff probe (13),Each end face of irradiation optical fiber (f1) is in arc-shaped or circular row with the state adjacent with the end face of light optical fiber (f2),And,Each end face of light optical fiber (f2) is in arc-shaped or circular row with the state adjacent with each end face of irradiation optical fiber (f1).

Description

Film thickness measurement device and film formation device
Technical field
It is more particularly to following the present invention relates to film thickness measurement device and the film formation device for being equipped with the film thickness measurement device Such film thickness measurement device and the film formation device for being equipped with the film thickness measurement device：Measured substrate is used in order to measure to be formed at Blooming, the film thickness measurement device uses substrate irradiation light by optical fiber to measured, and is received by being tested by optical fiber The reflected light that amount is reflected with substrate.
Background technology
In each field using optical thin film, it is desirable to which optical thin film is accurately formed as predetermined thickness.It is another Aspect, in the high-precision film thickness monitoring to optical thin film, correct film thickness measuring is indispensable.Also, this institute The thickness said is blooming, and it is the value determined by the refractive index of physical film thickness and film.
As the measuring method of thickness, it is known that measure the reflective measurement of thickness using following such phenomenons： On the surface of optical thin film reflect light and produced due to the different of path from the light of the reflected at interfaces of optical thin film in substrate Raw phase difference, so as to interfere.On the film thickness measurement device using the mensuration, proposition has various devices.
As an example of existing film thickness measurement device, can enumerate in the film formation device described in patent document 1 The film thickness measurement device of middle carrying.In the apparatus, the light for projecting to optical thin film by optical fiber from light emission, substrate with The light of the reflected at interfaces of optical thin film is by spread fiber to optical splitter.
In addition, in the case where film thickness measurement device is equipped in vacuum film formation apparatus, glass will be monitored and eventually become The substrate of multilayer film product is arranged in device together, and film is also formed on monitoring glass with substrate identical condition.And And, in film formation process, measure the blooming of the film for being formed at monitoring glass side to monitor film forming situation.Thereby, it is possible to Measurement is formed at the blooming of each layer of the multilayer film of substrate-side.Also, in existing vacuum film formation apparatus, in film forming work In sequence, whenever the film forming of each layer of the multilayer film for be formed on substrate, glass of the glass from after film forming will be monitored more It is changed to the monitoring glass before new glass, i.e. film forming.
Prior art literature
Patent document
Patent document 1：No. 3866933 publications of Japanese Patent
The content of the invention
The invention problem to be solved
But, in reflective film thickness measuring, in the case where light belt the optical thin film that angle incides substrate, film The thickness of the measured value than light vertical irradiation in the case of optical thin film of thickness, i.e. original thickness are thin.Specifically illustrate, such as It is θ that fruit sets light relative to the incident angle of the optical film of substrate, if the refractive index of optical film is n, and it is d0 to set original thickness, Then the measured value d of thickness turns into the value for meeting following formulas (1).
D=(d0/n2)×√{n2-(sinθ)2} (1)
Therefore, incident angle θ is bigger, then measurement error Δ d (=d0-d) of thickness is bigger, so that the measurement of thickness Precision reduction.
Also, as shown in figure 9, incident angle θ is equivalent to the light path of the light towards substrate incident and in substrate lateral reflection The half of the light path angulation of light.Fig. 9 is the explanatory diagram on incident angle.
In view of the relation between such incident angle θ and the measurement error Δ d of thickness, shone to optical thin film In the light projector penetrated, it is desirable to reduce the area (effective light projector scope) of part of actual irradiation light as far as possible to reduce incident angle θ。
In addition, for the purpose in the precalculated position that light is accurately exposed to optical thin film, there is such situation： Collector lens is set between light projector and optical thin film, through the collector lens to optical thin film irradiation light.Equally, for reliably The purpose of the reflected light from optical thin film reflection is received, there is such situation：Set between light-receiving device and optical thin film and received Optical lens, the reflected light from optical thin film is received through the sensitive lens.In this case, lens are passed through correspondingly with light, Illumination decays, consequently, it is possible to producing influence to the certainty of measurement of thickness.
If additionally, when the film forming of each layer is carried out on the substrate in multilayer film to be formed change monitoring glass, Size, surface state and machining accuracy these aspect, monitor glass between produce deviation, the deviation may influence film to survey Accuracy of measurement.
Also, if more than so due to without correctly carrying out the measurement of blooming, then reflect the survey The precision of the film thickness monitoring measured result and perform can also be reduced, so as to be difficult to the film of the thickness for obtaining desired.
Therefore, it is an object of the invention to provide a kind of film thickness measurement device that can accurately measure blooming. On this basis, other objects of the present invention are to provide a kind of correct measurement result of blooming that can be based on come high-precision The control of degree ground is formed at the film formation device of the thickness of the film of substrate.
The means used to solve the problem
The problem is solved by following proposal, film thickness measurement device of the invention, is possessed：Irradiation unit, be Measurement is formed at the blooming of the film of measured use substrate, and the irradiation unit is by the irradiation optical fiber that is made up of optical fiber Measured substrate irradiation light is used to described；Infrared rays receiver, in order to measure the blooming, the infrared rays receiver is by by optical fiber The light optical fiber of composition receives the light reflected by the measured substrate from after irradiation unit irradiation；And probe, institute State probe to tie up multiple irradiation optical fibers and multiple light optical fibers and formed, the probe is tested with described In the opposed faces as end face that the opposed side of amount substrate possesses, the end of multiple irradiation optical fibers is each configured with Face and the end face of multiple light optical fibers, in the opposed faces, are configured with each of the irradiation optical fiber of multiple End face is matched somebody with somebody with state alignment all adjacent with the end face of light optical fiber described at least one into arc-shaped or annular shape Each end face of the light optical fiber of multiple is equipped with all adjacent with each end face that optical fiber is irradiated described at least one State alignment into arc-shaped or annular shape, row and the end of the light optical fiber that the end face of the irradiation optical fiber is constituted The row that face is constituted are alternately arranged in concentric circles, in opposed faces and described measured with being not provided with optics between substrate In the state of part, the probe with the opposed faces and the measured use substrate, positioned at the side for forming the film The non-film face of opposite side is opposed.
In above-mentioned measured thin film device, at the conduct end possessed with the measured side opposed with substrate of probe In the opposed faces in face, if the end face of the end face of irradiation optical fiber and light optical fiber is adjacent to each other, from irradiation unit to thin The incident angle of the light of film irradiation becomes smaller.
Specifically illustrate, the light on the end face irradiation from irradiation optical fiber towards light path during film and the light by The measured light path angulation with substrate reflection during the end face towards light optical fiber, if the end face of irradiation optical fiber End face with light optical fiber is adjacent to each other, then angle situation more non-conterminous than the end face of two kinds of optical fiber is smaller.The opposing party Face, because incident angle is the 1/2 of the size of above-mentioned 2 light path angulations, therefore, irradiating the end face of optical fiber and receiving In the case that the end face of light optical fiber is adjacent to each other, incident angle also becomes smaller.If making incident angle diminish like this, Relation (specifically, being above-mentioned formula (1)) between measurement error Δ d according to above-mentioned incident angle and thickness, measurement Error delta d diminishes.
In addition, if the end face of the end face of irradiation optical fiber and light optical fiber is adjacent to each other, then can be by sensitive side Optical fiber efficiently receives reflected light.
Additionally, the precision on film thickness measuring, the filling rate of the optical fiber in the end face of probe is higher, then the essence of film thickness measuring Degree is higher, therefore, the end face of optical fiber is generally configured with high density state in the end face of probe.On the other hand, the end face of optical fiber is got over It is intensive, then irradiate optical fiber end face each other and light optical fiber end face it is more easy to be intensive each other.On the other hand, if Irradiating the end face of optical fiber and the end face of light optical fiber respectively in the side of arc-shaped or circular row on the end face of probe Formula configures each optical fiber, then can efficiently realize irradiation optical fiber and light optical fiber such optic fiber configureing adjacent to each other.
Such effect due to more than, in the film thickness measurement device described in technical scheme 1, compared with existing device, Blooming can more accurately be measured.
In addition, film thickness measurement device of the invention, the film thickness measurement device possesses：Irradiation unit, in order to measure It is formed at the blooming of the film of measured use substrate, the irradiation unit is by the irradiation optical fiber that is made up of optical fiber to described It is measured to use substrate irradiation light；Infrared rays receiver, in order to measure the blooming, the infrared rays receiver optical fiber by being made up of Light optical fiber receives the light reflected by the measured substrate from after irradiation unit irradiation；And probe, the probe Tie up multiple irradiation optical fibers and multiple light optical fibers and formed, the probe measured is using base with described In the opposed faces as end face that the opposed side of plate possesses, end faces of multiple irradiation optical fibers and many are each configured with The end face of the individual light optical fiber, in the opposed faces, be configured with multiple the irradiation optical fibers each end face with State alignment all adjacent with the end face of light optical fiber described at least one is configured with many into arc-shaped or annular shape Each end face of the individual light optical fiber is with state all adjacent with each end face that optical fiber is irradiated described at least one It is arranged in arc-shaped or annular shape, row and the end face institute structure of the light optical fiber that the end face of the irradiation optical fiber is constituted Into row to constitute spiral reversely with each other in the way of arrange, described measured set in the opposed faces and not between substrate In the state of putting optical component, the probe with the opposed faces and the measured use substrate, positioned at form the film The opposite side in side non-film face it is opposed.
In structure more than, due to without using collector lens and sensitive lens, therefore light loss to be suppressed, logical When crossing light optical fiber reception reflected light, reflected light can be received with than larger illumination.Also, with by light optical fiber institute The increase of the light quantity of the light of reception correspondingly, improves S/N ratios when carrying out spectrum analysis to the light in order to calculate thickness.Cause This, the structure according to technical scheme 2 can be with precision measure blooming higher.
In addition, in above-mentioned film thickness measurement device, it is more preferable that constitute the multiple described irradiation side of the probe Optical fiber constitutes the concordant pencil optical fiber in the opposed faces of end face, the opposed faces and institute with multiple light optical fibers The distance between film forming face is stated at more than 2 times of diameter of the pencil optical fiber.
In structure more than, light relative to film incident angle, in other words by film reflector light angle of reflection Spend below the numerical aperture NA in light optical fiber.In this case, light receiving efficiency when receiving light by light optical fiber is entered One step is improved.Therefore, the structure according to technical scheme 3, can more accurately measure blooming.
In addition, in above-mentioned film thickness measurement device, the measured substrate can be discoid or circular base Plate.That is, in the structure described in technical scheme 4, can accurately measure and measured use substrate discoid or circular The blooming of the film of upper formation.And then, in it can realize the film thickness measurement device that the multiple spot of thickness is monitored, if used Discoid or circular substrate, then compare with for example rectangular-shaped substrate, can further increase monitoring points.
In addition, in above-mentioned film thickness measurement device, Ke Yiwei, the film thickness measurement device has：The irradiation unit； DC stable power supply, the light source supply DC current that the DC stable power supply possesses to the irradiation unit；The probe； Optical splitter, the optical splitter possesses the infrared rays receiver, and output is received by the measured use with the infrared rays receiver The corresponding analog signal of light reception intensity during the light of substrate reflection；Amplifier, the amplifier is to exporting from the optical splitter The analog signal is amplified；A/D converter, the A/D converter will be by the analog signal after amplifier amplification It is converted into data signal；Electronic computer, the electronic computer is based on the data signal and calculates the blooming；And letter Number process circuit, the signal processing circuit between the A/D converter and the electronic computer, the signal transacting Circuit is used to perform predetermined signal transacting to the data signal when the electronic computer calculates the blooming. That is, in the structure described in technical scheme 5, not only possesses the constitution equipment identical possessed with common measured thin film device Equipment, and can accurately measure the blooming of film.
In addition, foregoing problem is solved by following proposal, film formation device of the invention is by vacuum tank Deposition material is deposited with and forms the film formation device of film on the substrate in the surface of substrate, the film formation device possesses：Steam Hair mechanism, the evaporation device is used to evaporate the deposition material；Opening and closing member, the opening and closing member is in order to cut off the evaporation The deposition material that mechanism is evaporated towards the substrate surface when travel path and be opened and closed action；Control machine Structure, the controlling organization controls the opening and closing of the opening and closing member；With the film thickness measuring described in any one in technical scheme 1 to 5 Device, the substrate and it is described it is measured be accommodated in the vacuum tank with substrate both sides in the state of, in order to will be described Deposition material is deposited with the surface of the substrate and the measured use substrate both sides, and the evaporation device makes the deposition material Evaporation, the film thickness measurement device measurement is formed at the blooming of the film of the measured use substrate, the control machine Structure controls the opening and closing of the opening and closing member according to the film thickness measurement device to the measurement result of the blooming.
In the film formation device so constituted more than, due to the film thickness measurement device for possessing the effect that can play foregoing, because This can accurately measure thickness, and then, film thickness monitoring is carried out according to its measurement result.Therefore, if the institute of technical scheme 6 The film formation device stated, then can be based on that the correct measurement result of blooming is accurately controlled to be formed at the film of substrate Thickness.
In addition, in above-mentioned film formation device, it is more preferable that during forming multilayer film on the substrate, The same measured use substrate of configuration in the vacuum tank, and described measured described many with also being formed on substrate Tunic, the film thickness measurement device successively measures the institute of each tunic being formed in the multilayer film of the measured use substrate State blooming.
Structure according to more than, during forming multilayer film on substrate, is changed without measured use substrate, whenever multilayer film Each layer be formed at it is measured measure the blooming of each tunic when using substrate, therefore, it is possible to suppress because whenever measuring each layer Thickness when the influence that converts measured use substrate and produce.Therefore, if film formation device described in technical scheme 7, then can Enough accurately measurements are formed at the thickness of each layer of the multilayer film of substrate, and can be according to its measurement result more high accuracy Carry out film thickness monitoring.
The effect of invention
In the film thickness measurement device described in technical scheme 1, compared with existing device, can more accurately measure Blooming.
In the film thickness measurement device described in technical scheme 2, with the S/N of spectrum analysis than raising amount correspondingly, can More accurately measure blooming.
In the film thickness measurement device described in technical scheme 3, because the reflection angle of the light by film reflector is in sensitive side Below the numerical aperture NA of optical fiber, therefore, it is possible to more accurately measure blooming.
In the film thickness measurement device described in technical scheme 4, can accurately measure in discoid or circular quilt The blooming of the film formed on measurement substrate.And then, the film thickness measurement device that the multiple spot of thickness is monitored can realized In, if using discoid or circular substrate, compared with rectangular-shaped substrate, can further increase monitoring points.
In the film thickness measurement device described in technical scheme 5, not only possess and possess with common measured thin film device Constitution equipment identical equipment, and can accurately measure the blooming of film.
In the film formation device described in technical scheme 6, thickness can be accurately measured, and it is high-precision according to the measurement result Carry out film thickness monitoring degree.
In the film formation device described in technical scheme 7, each layer of the multilayer film because being formed at substrate in measurement can be suppressed Blooming when the influence all changing measured use substrate for each layer and produce, correspondingly, can be accurately Measurement is formed at the thickness of each layer of the multilayer film of substrate, and can more accurately carry out thickness according to its measurement result Control.
Brief description of the drawings
Fig. 1 is the figure of the Sketch of the film formation device for showing present embodiment.
Fig. 2 is the diagrammatic side view of the probe of present embodiment.
(A) and (B) of Fig. 3 is the figure of the allocation position for showing the optical fiber in the 1st.
Fig. 4 is the figure of the allocation position for showing the optical fiber in comparative example.
(A) and (B) of Fig. 5 is the figure of the allocation position for showing the optical fiber in the 2nd.
Fig. 6 is the explanatory diagram of the validity of the allocation position of the optical fiber on present embodiment.
(A) and (B) of Fig. 7 is the figure of other deformations for showing the 2nd.
(A) and (B) of Fig. 8 is the figure of the allocation position for showing the optical fiber in the 3rd.
Fig. 9 is the explanatory diagram on incident angle.
Specific embodiment
Below, embodiments of the present invention (hereinafter referred to as present embodiment) are illustrated referring to the drawings.
First, reference picture 1 is illustrated to the Sketch of the film formation device of present embodiment.Fig. 1 is to show this implementation The figure of the Sketch of the film formation device of mode.
The film formation device of present embodiment be by vacuum tank by deposition material be deposited with the surface of substrate and The device of multilayer film is formed on substrate, the vacuum deposition apparatus 100 of film are formed in particular with vacuum vapour deposition.In addition, at this In the vacuum deposition apparatus 100 of implementation method, by substrate (hereinafter referred to as actual substrate S) and the monitoring substrate of film thickness measuring Sm is arranged in vacuum tank 1, the blooming of the film that substrate Sm sides are formed can be being monitored while measuring, while based on it The thickness of the film that measurement result control is formed in actual substrate S sides.
Here, actual substrate S refers to the substrate that actual installation utilizes equipment in film, actual substrate S is for example by glass structure Into.On the other hand, monitoring substrate Sm is equivalent to measured use substrate, is only for the part of thickness monitoring, monitoring substrate Sm by Same material such as glass is constituted with actual substrate S-phase.Particularly, the monitoring substrate Sm of present embodiment is in top view It is circular substrate, its preferred thickness is 1.0~2.0mm.
Also, multilayer film in the present embodiment, is formed with the condition same with actual substrate S-phase on monitoring substrate Sm. I.e., in the present embodiment, the blooming of the film formed in actual substrate S sides is treated on an equal basis and in monitoring substrate Sm sides The blooming of the film of formation, and to monitoring that the blooming of the film of substrate Sm sides is monitored, thus to actual substrate S The blooming of the film of side is managed.
Structure to vacuum deposition apparatus 100 is illustrated, as shown in figure 1, as main inscape, vacuum evaporation Device 100 possesses vacuum tank 1, substrate holder 2, evaporation device 3, shutter 4, shutter control unit 5 and film thickness measuring Device 6.
Superjacent air space in the inner space of vacuum tank 1, is accommodated with the substrate holder 2 of arch, is protected in the substrate The inner surface of holder 2 is provided with multiple actual substrate S.In addition, being formed with out in the center of the inner surface of substrate holder 2 Mouth 2a, in the opening, the position directly below of 2a is configured with a monitoring substrate Sm.In the position, the monitoring substrate Sm of configuration turns into Such state：A part of monitoring substrate Sm is exposed to vault (ド ー system by above-mentioned opening 2a) outside.
Additionally, for the uniform purpose of film-forming amount made between actual substrate S, substrate holder 2 is during film forming with edge Rotation centered on the rotary shaft of vertical direction.In the meantime, monitoring substrate Sm is rotated against relative to substrate holder 2.That is, In the present embodiment, monitoring substrate Sm is held in the monitoring substrate holder (not shown) with the split of substrate holder 2, base Plate retainer 2 and monitoring substrate holder can be independently of one another.
On the other hand, the underlying space in the inner space of vacuum tank 1 possesses evaporation device 3.The evaporation device 3 is Mechanism for making the deposition material evaporation onto actual substrate S or monitoring substrate Sm to be deposited in order to form film.Specifically Illustrate, the evaporation device 3 of present embodiment is the evaporation device identical type generally possessed with vacuum deposition apparatus Evaporation device, for example, can enumerate and the deposition material for being held in crucible (not shown) be heated using electron beam so that it steams Electricity beamlet device etc..
Shutter 4 is provided between substrate holder 2 and evaporation device 3.The shutter 4 is one of opening and closing member and shows Example, traveling road during in order to cut off the deposition material evaporated by evaporation device 3 towards actual substrate S or monitor the surface of substrate Sm Footpath, makes the shutter 4 be opened and closed movement by drive mechanism (not shown).Specifically illustrate, opened when shutter 4 is in During position (in Fig. 1, being the position of shutter 4 shown in solid), the deposition material evaporated by evaporation device 3 disperses and can Supply is to actual substrate S or monitors substrate Sm.Conversely, (in Fig. 1, being screening shown in dotted line when shutter 4 is in the close position The position of baffle plate 4) when, dispersing for deposition material is hindered using shutter 4, the result is that, it is impossible to deposition material is supplied to reality Border substrate S or monitoring substrate Sm.
Shutter control unit 5 equivalent to the opening and closing for controlling above-mentioned shutter 4 controlling organization, in the present embodiment, Shutter control unit 5 is made up of the 2nd computer PC 2 described later.Specifically illustrate, the 2nd computer PC 2 is through (not shown) Interface is connected with shutter 4, and the control program of the 2nd computer PC 2 is installed on by performing, to the output control of shutter 4 Signal.Also, when shutter 4 is connected to control signal from the 2nd computer PC 2, the shutter 4 is opened according to control signal Close action.
Film thickness measurement device 6 is the device measured to the blooming for being formed at the film of monitoring substrate Sm, especially It is that in the present embodiment, film thickness measurement device 6 is using the device of reflection method for measuring thickness.That is, the thickness of present embodiment Measurement apparatus 6 make light be incident to the film for being formed at monitoring substrate Sm, right after the light reflected by monitoring substrate Sm is received The reflected light carries out light splitting and detects the luminous intensity (spectrum) of every kind of wavelength.Then, based on the luminous intensity for detecting, shape is calculated Into the blooming of the film in monitoring substrate Sm.
Additionally, the film thickness measurement device 6 of present embodiment is each layer to being formed in the multilayer film on monitoring substrate Sm The device that the blooming of film is successively measured.More specifically illustrate, as it was previously stated, monitoring substrate Sm and substrate holder 2 independently rotate, and on the other hand, monitoring substrate covering (not shown) are configured with the position directly below of monitoring substrate Sm.Should Monitoring substrate covering is discoid part, and opening is formed with the central portion of the monitoring substrate covering.Monitoring substrate Sm A part exposed relative to evaporation device 3 by the opening.
On the other hand, in the state of actual substrate S and monitoring substrate Sm both sides are accommodated in vacuum tank 1, in order to incite somebody to action Deposition material is deposited with to both surfaces, and evaporation device 3 evaporates deposition material.Thus, in actual substrate S and monitoring substrate Sm Film is formed with roughly the same condition in respective film forming face.Now, the formation in the film forming face of monitoring substrate Sm has film Region only by monitoring the opening formed in substrate covering and the region exposed.
In addition, as it was previously stated, in the present embodiment, multilayer film is formed on actual substrate S, whenever forming the thin of each layer During film, deposition material and membrance casting condition are switched to be formed the material and condition of lower thin film.On the other hand, although with The condition roughly the same with substrate also forms multilayer film on monitoring substrate Sm, but, it is in the present embodiment, thin at one layer To switch the moment of deposition material and membrance casting condition after the completion of film, make monitoring substrate Sm relative to static monitoring substrate covering Relatively rotate the rotational angle of regulation.Relatively rotated relative to monitoring substrate covering by so making monitoring substrate Sm, thus, Region in monitoring substrate Sm, being exposed by monitoring the opening formed in substrate covering is relative with above-mentioned rotational angle Ground skew is answered, as a result, the region for being formed with film accordingly offsets with above-mentioned rotational angle.
Also, thereafter into film process, it is in monitoring substrate Sm, rotate before the region exposed (hereinafter referred to as Exposed area before rotation) and the repetition in region (hereinafter referred to as rotate after exposed area) exposed after rotating in the range of shape Into the film of new layer.On the other hand, in the exposed area before rotation, not with rotation after exposed area repeat scope The film of new layer is not formed inside.Therefore, in monitoring substrate Sm, film process will be performed into before spinning movement before and after Between the region being exposed independent from and the region no longer exposed after spinning movement, the blooming of the film to being formed is compared, Thus ask in each thickness into the film formed in film process.
Next, the structure to the film thickness measurement device 6 of present embodiment is illustrated referring to Figures 1 and 2.Fig. 2 is this The diagrammatic side view of the probe of implementation method.
As shown in figure 1, used as the main component parts of film thickness measurement device 6, film thickness measurement device 6 has：Light projector 11st, DC stable power supply 12, optical pickocff probe 13, optical splitter 14, amplifier 15, A/D converter 16, signal transacting electricity Road 17 and 2 computer PC 1, PC 2.
Light projector 11 is an example of irradiation unit, in order to measure the blooming of the film for being formed at monitoring substrate Sm, Light projector 11 is by the irradiation optical fiber f1 that is made up of optical fiber to monitoring substrate Sm irradiation lights.Specifically illustrate, light projector 11 With the light source 21 being made up of Halogen lamp LED etc., from the terminal surface irradiation of optical pickocff probe 13 from light source 21 send it is white Light, wherein, the end face of irradiation optical fiber f1 is configured at the terminal surface of the optical pickocff probe 13.Here, light projector 11 It is synchronous with optical splitter 14, so as to optical splitter 14 in incident intensity output cycle synchronisation putting out for light source 21 is repeated Go out and light.Also, the light source 21 possessed to light projector 11 from DC stable power supply 12 supplies DC current.
Optical splitter 14 possesses infrared rays receiver 22, and exports the light for being received with infrared rays receiver 22 and being reflected by monitoring substrate Sm When the corresponding analog signal of light reception intensity.More specifically illustrate, the infrared rays receiver 22 that optical splitter 14 possesses is for example By CCD (Charge Coupled Device：Charge-coupled image sensor) constitute, in order to measure blooming, the infrared rays receiver 22 The light reflected by monitoring substrate Sm after being irradiated from light projector 11 is received by the light optical fiber f2 being made up of optical fiber.Optical splitter 14 The luminous intensity (spectrum) of every kind of wavelength is detected after light splitting is carried out to the light received by infrared rays receiver 22, and is exported and detection knot Really corresponding electric signal.Here, from optical splitter 14 output electric signal equivalent to reflected light is received with infrared rays receiver 22 when The corresponding analog signal of light reception intensity.
In addition, the 14 pairs of light from the irradiation of light projector 11 of optical splitter carries out light splitting, and export the every kind of wavelength for representing incident light Luminous intensity, the i.e. electric signal of incident intensity.As described above, optical splitter 14 exports the electric signal for representing incident intensity respectively With the electric signal for representing intensity of reflected light.Device 15 is exaggerated respectively from above-mentioned 2 kinds of electric signals of the output of optical splitter 14 to amplify, then Data signal is converted to by A/D converter 16.Then, data signal is transfused to the 2nd computer PC2.
Optical pickocff probe 13 is an example of probe, is by multiple irradiation optical fiber f1 and multiple light sidelights Fine f2 is stopped up and formed.Specifically illustrate, as shown in Fig. 2 the multiple irradiation optical fiber f1 being connected with light projector 11 And the multiple light optical fiber f2 being connected with infrared rays receiver 22 are respectively structured as beam (bundle), and it is accommodated in flexible pipe 23.
Also, irradiation optical fiber f1 and light optical fiber f2 has core and is coated with the coating member of core respectively, in this implementation In mode, core diameter is of about 200 μm, is of about 235 μm including the fibre diameter including coating member.
In addition, the end of in the beam that irradiation optical fiber f1 is constituted and the connection of light projector 11 side is provided with company Meet device 24A.Equally, in the beam that light optical fiber f2 is constituted and the end of side of the connection of infrared rays receiver 22 be provided with Connector 24B.
Also, bundles of irradiation optical fiber f1 and light optical fiber f2 is concentrated into a branch of and structure in their free end side Into optical pickocff probe 13.That is, multiple irradiation optical fiber f1 and multiple sensitive sides of optical pickocff probe 13 are constituted Optical fiber f2 constitutes the concordant pencil optical fiber of end face at the surface of the free end side of optical pickocff probe 13.
More specifically illustrate, as shown in Fig. 2 the beam of each optical fiber f1, f2 is converged by intermediate connector 24C and is concentrated into one Beam, each optical fiber f1, f2 are incorporated in identical flexible pipe 23.And then, it is being concentrated into the irradiation optical fiber f1 of a branch of state With the protection cylinder 25 that the end of in the light optical fiber f2, side as free end is provided with cylindrical shape, the protection 25 Hes of cylinder Its internal optical fiber f1, f2 is accommodated in be disposed in vacuum tank 1.
Protection cylinder 25 is made up of diameter mutually different large-diameter portion 25a and minor diameter part 25b, and minor diameter part 25b constitutes optics and passes The sensor terminal part of probe 13.Also, optical pickocff probe 13 is configured to its terminal surface i.e. one end of minor diameter part 25b Face is opposed with monitoring substrate Sm in the position directly above of monitoring substrate Sm.That is, terminal surface of the optical pickocff with probe 13 is constituted Minor diameter part 25b end face equivalent to optical pickocff probe 13 the side opposed with monitoring substrate Sm possess it is right Put face.
In addition, in minor diameter part 25b, in a co-planar fashion putting down the end face of irradiation optical fiber f1 and light optical fiber f2 Together.Therefore, in the end face of minor diameter part 25b, the end face and multiple light optical fibers of multiple irradiation optical fiber f1 are each configured with The end face of f2.Here, in the present embodiment, on the end face of minor diameter part 25b, the end face and sensitive side of irradiation optical fiber f1 The end face of optical fiber f2 is regularly configured.The allocation position of each optical fiber f1, f2 on the end face on minor diameter part 25b, will be Narration in detail below.
As described above, the optical pickocff of present embodiment probe 13 irradiates optical fiber f1 and light sidelight by by multiple Fine f2 is concentrated into a branch of pencil optical fiber and constitutes.Also, in the present embodiment, constitute optical pickocff probe 13 Irradiation optical fiber f1 and the respective quantity of light optical fiber f2 are more than 20.Thus, the film thickness measuring in present embodiment is filled Put in 6, the multiple spot monitoring of thickness can be realized.
2 computer PC 1, PC 2 can be communicated through Ethernet (registration mark), and a computer is the 1st calculating Machine PC 1 is the computer for controlling light projector 11.In the present embodiment, the 1st computer PC 1 is in order to carry out communication Protocol Conversion And control the light irradiation of light projector 11 to act through programmable logic controller (PLC) PLC.Another computer is the 2nd computer PC 2 It is an example of electronic computer, it is based on 16 pairs of electric signals from the output of optical splitter 14 of A/D converter and is changed and given birth to Into data signal calculate the blooming of the film for being formed at monitoring substrate Sm.
Also, it is folded with signal processing circuit 17 between the computer PC 2 of A/D converter 16 and the 2nd.When the 2nd computer During 2 calculating optical thickness of PC, the signal processing circuit 17 performs predetermined signal transacting to above-mentioned data signal.Here, predetermined Signal transacting refer to that above-mentioned data signal is converted into the lattice that the blooming that suitable 2nd computer PC 2 carried out is calculated The treatment of the signal of formula, is e.g. processed or frequency analysis for eliminating the small echo (wavelet) of the composition beyond interference signal Treatment etc..
Additionally, as it was previously stated, the 2nd computer PC 2 equivalent to control shutter 4 opening and closing controlling organization, it is according to light The calculated value of thickness is learned to control the opening and closing of shutter 4.Here, the calculating of the blooming that the 2nd computer PC 2 is calculated Value is the measurement result that film thickness measurement device 6 measures blooming.
The structure of the film thickness measurement device 6 of so far illustrated present embodiment is reflective with existing in terms of major part The structure of film thickness measurement device is identical, but, described below 4 points are different from existing device.
1st difference is to be not provided with gathering between the terminal surface and monitoring substrate Sm of optical pickocff probe 13 The optical component such as optical lens and sensitive lens.I.e., in the present embodiment, as shown in figure 1, constituting optical pickocff probe It is not provided with the state of optical component between the end face and monitoring substrate Sm of the minor diameter part 25b of 13 terminal surface, optics is passed Non-film face of the sensor probe 13 with monitoring substrate Sm at the end face of minor diameter part 25b is opposed.Here, non-film face refers to Monitoring substrate Sm, face positioned at the side opposite with the side for being formed with film.
So, due to being not provided with optical section between the terminal surface of optical pickocff probe 13 and monitoring substrate Sm Part, therefore, in the present embodiment, the light loss because being produced by optical component can be suppressed.As a result, light sidelight Fine f2 can receive reflected light with than larger illumination.Further, it is possible to the increasing of the light quantity of the light received with light optical fiber f2 A large amount of S/N ratios correspondingly improved when carrying out spectrum analysis to the light in order to calculate thickness.Therefore, in the film of present embodiment In thickness measuring device 6, blooming can be accurately measured.
Also, the feelings of optical component are not provided between the terminal surface and monitoring substrate Sm of optical pickocff probe 13 Under condition as, the diameter of effective light projector hot spot can be regarded the pencil optical fiber constituted with irradiation optical fiber f1 and light optical fiber f2 Diameter, i.e. pencil fibre diameter it is suitable.Here, pencil fibre diameter refers to by the terminal surface in optical pickocff probe 13 2 end faces of in the end face of multiple irradiation optical fiber f1 of upper configuration and the end face of multiple light optical fiber f2, lie farthest away The length of defined, is of about in the present embodiment 1.8mm.
2nd difference is, optical pickocff between the terminal surface of probe 13 and the film forming face of monitoring substrate Sm away from From being more than 2 times of pencil fibre diameter.When so constituting, light is relative to the incident angle of film, in other words by film Numerical aperture NA below of the reflection angle of the light of reflection in light optical fiber f2.In the present embodiment, using the property of the above Matter, it is ensured that optical pickocff is straight in pencil optical fiber with the distance between the film forming face of monitoring substrate Sm with the terminal surface of probe 13 More than 2 times of footpath.As a result, light receiving efficiency when receiving light by light optical fiber f2 is further improved such that it is able to more Plus accurately measure blooming.
In addition, if optical pickocff the distance between 13 terminal surface and the film forming face of monitoring substrate Sm mistake of popping one's head in Short, then the reflection angle of incident angle of the light relative to film and the light by film reflector becomes big, therefore optical pickocff is visited First 13 light receiving efficiency (by the ratio of optical pickocff probe 13 light quantity for receiving and the light quantity for reflecting) is reduced, so as to lead Cause certainty of measurement reduction.On the other hand, if optical pickocff with the film forming face of the terminal surface of probe 13 and monitoring substrate Sm it Between distance it is long, then from light is by film reflector until light by optical pickocff probe 13 receive untill during in Attenuation degree becomes big, therefore certainty of measurement reduction.If in contrast, terminal surface and monitoring base of the optical pickocff with probe 13 The distance between film forming face of plate Sm more than 2 times of pencil fibre diameter, be preferably in 2 times~3 times of scope, then can be real Existing preferable certainty of measurement.
Also, after, for convenience of description, by the optical pickocff terminal surface of probe 13 and the film forming of monitoring substrate Sm The distance between face is referred to as operating distance WD.
3rd difference is during forming multilayer film on actual substrate S, same monitoring substrate Sm to be configured at In vacuum tank 1, and above-mentioned multilayer film is also formed on monitoring substrate Sm.I.e., in the present embodiment, not in reality Change monitoring substrate Sm in the midway that multilayer film is formed on substrate S.Also, film thickness measurement device 6 is successively measured and is formed at monitoring base The blooming of each tunic in the multilayer film of plate Sm.As a result, when according to every layer of optical film of each layer of measurement multilayer film When thick, the influence produced by monitoring substrate Sm changes when measuring every time can be suppressed.
Specifically illustrate, in the existing film formation device for forming multilayer film, exist and be equipped with monitoring substrate converter The film formation device of (not shown), in such a device, whenever by each layer film forming of multilayer film in actual substrate S, monitors base Plate converter changes monitoring substrate Sm.But, between substrate is monitored, exist in size, surface state and machining accuracy inclined Difference, the deviation produces influence to measured thin film precision sometimes.That is, film thickness measuring repeatability aspect, in multilayer film shape It is problematic to change monitoring substrate into midway.
In this regard, in the present embodiment, during multilayer film is formed at into actual substrate S, by same monitoring substrate Sm is persistently configured in vacuum tank 1, therefore, the influence produced by the deviation between monitoring substrate Sm will not feed through to film The precision of measurement.Correspondingly, the thickness of each layer of the multilayer film for being formed at monitoring substrate Sm can be accurately measured, and then, The blooming of the film that the measurement result more accurately controls to be formed at actual substrate S sides can be based on.
Also, in the present embodiment, as it was previously stated, using circular substrate as monitoring substrate Sm, on the other hand, In the side of film thickness measurement device 6, the multiple spot monitoring of thickness can be realized.Additionally, in the present embodiment, pencil fibre diameter is big About 1.8mm, optical pickocff probe 13 is made up of the irradiation optical fiber f1 and light optical fiber f2 of more than 20.Its result It is that in the film thickness measurement device 6 of present embodiment, monitoring can be made to count (measurement points) for 80 points.Generally, for raising The purpose of light quantity and speed, is formed in this 2 kinds evaporation layers of deposition material of the deposition material of high index of refraction and low-refraction On monitoring substrate Sm, therefore, if 80 points of monitoring points, then also cope with to be formed and be for example made up of 160 layers (80 × 2) Multilayer film as situation.
4th difference is on as terminal surface, minor diameter part 25b end face of optical pickocff probe 13, to shine Penetrate the allocation position of optical fiber f1 and the respective end faces of light optical fiber f2.Specifically illustrate, in the present embodiment, in light Learn on terminal surface of the sensor with probe 13, be configured with each end face of irradiation optical fiber f1 of multiple all to be received with least one The state that the end face of light optical fiber f2 is adjacent is configured to arc-shaped or annular shape.Equally, on above-mentioned end face, it is configured with many Each end face of individual light optical fiber f2 is configured to state all adjacent with each end face of at least one irradiation optical fiber f1 Arc-shaped or annular shape.
As described above, in the optical pickocff terminal surface of probe 13, if the end face and sensitive side of irradiation optical fiber f1 The end face of optical fiber f2 is adjacent to each other, then the incident angle of the light for being irradiated to film from light projector 11 further diminishes.Here, incident The size of angle is the 1/2 of following 2 light path angulations, and this 2 light paths are：Irradiated from the end face of irradiation optical fiber f1 Light is towards light path during film；With the light on the surface of film or monitoring interfaces of the substrate Sm with film reflection and direction is received The light path during end face of light optical fiber f2.
On the other hand, between incident angle θ and the measured value d of thickness, the relation shown in above-mentioned formula (1) is set up, Therefore, incident angle θ is bigger, then the measurement error Δ d of thickness is bigger.Specifically illustrate, be set as the refractive index of membrane material In the case of for n=1.47, when incident angle θ be 3 °, 5 °, 8 °, 10 °, 12 ° when, measurement error Δ d is respectively 0.07%, 0.2%th, 0.5%, 0.7%, 1.0%.On the contrary, incident angle θ is smaller, then the measurement error Δ d of thickness is smaller.
As described above, the end face of irradiation optical fiber f1 and the end face of light optical fiber f2 are more far away, then anti-by film Ratio, the i.e. light receiving efficiency of light quantity in the light quantity penetrated, being received by light optical fiber f2 is lower.If conversely, irradiation The end face of optical fiber f1 and the end face of light optical fiber f2 are adjacent to each other, then light receiving efficiency is improved.
In addition, the precision on film thickness measuring, filling rate of the optical fiber in the terminal surface of optical pickocff probe 13 is got over Height, then the precision of film thickness measuring is higher, therefore, generally configured with high density state in terminal surface of the optical pickocff with probe 13 The end face of optical fiber.On the other hand, the end face of optical fiber is more intensive, then irradiate the end face of optical fiber f1 each other and light optical fiber f2 End face it is more easy to be intensive each other.Also, if the end face of same fiber is densely configured into bulk each other, then irradiate sidelight The end face of fine f1 and the end face of light optical fiber f2 can be easily separated.
On the other hand, if so as to irradiate the end face of optical fiber f1 and receive on the terminal surface of optical pickocff probe 13 The end face of light optical fiber f2 configures each optical fiber in the mode of arc-shaped or circular row respectively, then can efficiently realize irradiation Optical fiber f1 and light optical fiber f2 such optic fiber configureings adjacent to each other.
Also, as irradiation optical fiber f1 and light optical fiber f2 such optic fiber configureings adjacent to each other, it is also contemplated that Following configuration：On terminal surface of the optical pickocff with probe 13, make the end face of irradiation optical fiber f1 and light optical fiber f2 End face difference in column, and is alternately arranged the row of various optical fiber.But, for these reasons and by the end face of optical fiber with intensive State is configured in the terminal surface of optical pickocff probe 13 under such circumstances, makes the end face and light of irradiation optical fiber f1 The end face of optical fiber f2 in column and makes the row of various optical fiber be alternately arranged such optic fiber configureing to be physically difficult to respectively. Therefore, each optical fiber is configured in the way of making the end face of various optical fiber in arc-shaped or circular row as in the present embodiment, This is more efficient, is preferred.
Such effect due to more than, compared with existing device, the film thickness measurement device 6 of present embodiment can be more Accurately measure blooming.
Next, reference picture 3 to 8, pair with the terminal surface of optical pickocff probe 13 on irradiation optical fiber f1 and receive The related concrete example (the 1st~the 3rd) of the allocation position of each end face of light optical fiber f2 is illustrated.
(A) and (B) of Fig. 3 is the figure of the allocation position for showing the optical fiber in the 1st.Fig. 4 is to show the light in comparative example The figure of fine allocation position.(A) and (B) of Fig. 5 is the figure of the allocation position for showing the optical fiber in the 2nd.Fig. 6 is on this reality The explanatory diagram of the validity of the allocation position of the optical fiber of mode is applied, in figure, the data of the graphical representation the 1st of solid line are empty The data of the graphical representation comparative example of line.(A) and (B) of Fig. 7 is the figure of other deformations for showing the 2nd.(A) of Fig. 8 and (B) be the allocation position for showing the optical fiber in the 3rd figure.In Fig. 3,4,6,7 and 8, black circle represents irradiation optical fiber f1's Allocation position, white circle represents the allocation position of light optical fiber f2.
First, the allocation position to the optical fiber in the 1st is illustrated, and such as shown in (A) and (B) of Fig. 3, irradiates optical fiber F1 and light optical fiber f2 is arranged in the way of irradiating optical fiber f1 and light optical fiber f2 and being constituted spiral reversely with each other, optical fiber The beam integrally configuration as round shape.Also, (A) and (B) of Fig. 3 shows the allocation position and sensitive side that make irradiation optical fiber f1 The structure of the mutual phase reversal of allocation position of optical fiber f2, therefore the structure only to diagram in (A) of Fig. 3 is illustrated below.
In the 1st, as it was previously stated, irradiation optical fiber f1 and light optical fiber f2 is arranged into arc-shaped, more respectively Specifically be arranged curl.Thus, in the 1st, can with uniform light quantity to monitoring substrate Sm in, effectively The each several part irradiation light of light projector scope, and then, the light that can be reflected by monitoring substrate Sm with uniform condition reception.
In addition, in the 1st, maximum incident angle degree is of about 8.4 °, effective incident angle is of about 1.5 °.Here, most Big incident angle irradiation optical fiber f1 furthest away each other and is received equivalent on the terminal surface that optical pickocff pops one's head in 13 The half of the angle between light optical fiber f2, in (A) of Fig. 3, irradiates equivalent to from positioned at outermost irradiation optical fiber f1 Light light path and towards be located at fibre bundle center light optical fiber f2 light light path angulation half.In addition, Light path and direction with optical fiber f1 adjacent light sidelight of effective incident angle equivalent to the light irradiated from irradiation optical fiber f1 The half of the angle that the light path of the light of fine f2 is constituted.
Validity to the allocation position of the optical fiber of the 1st is illustrated, in the 1st, with the comparative example illustrated in Fig. 4 Compare, maximum incident angle degree and effective incident angle diminish.More specifically illustrate, in a comparative example, multiple irradiation optical fiber F1 assembles in semicircle shape, also, multiple light optical fiber f2 assembles in semicircle shape, the fibre bundle integrally configuration as round shape.
Also, in a comparative example, maximum incident angle degree turns into about 11.1 °, and effective incident angle turns into about 6 °. This, the maximum incident angle degree in comparative example is equivalent to the light path from the light irradiated positioned at outermost irradiation optical fiber f1 and court To the half of the light path angulation of the light away from optical fiber f1 farthest light optical fiber f2.In addition, effective in comparative example Incident angle is in position of centre of gravity equivalent to the light path and direction of the light irradiated from the irradiation optical fiber f1 in position of centre of gravity The half of the light path angulation of the light of light optical fiber f2.Also, position of centre of gravity refers to the optical fiber group assembled in semicircle shape Position of centre of gravity, when the radius of semicircle that optical fiber group constituted is set as r, relative position of the center of gravity relative to the center of the semicircle Can be represented with (0,2r/ π) this coordinate.
As previously discussed, in the 1st, compared with comparative example, maximum incident angle degree and effective incident angle diminish.This is Because in the 1st, relative to comparative example, the respective decentralization of irradiation optical fiber f1 and light optical fiber f2 becomes big, irradiates side In the ratio and light optical fiber f2 of the irradiation optical fiber adjacent with light optical fiber f2 in optical fiber f1 with irradiation optical fiber The ratio of f1 adjacent light optical fiber becomes higher.Thus, in the 1st, relative to comparative example, effective light projector scope becomes Small, the measurement error of blooming also diminishes.
In addition, in the 1st, compared with comparative example, operating distance WD is the relative reflection light quantity in the range of 0~7mm (ratio of the light quantity of reflected light relative to the light quantity of incident light) further becomes big.Therefore, in operating distance WD be 0~ In the case of in the range of 7mm, in the 1st, compared with comparative example, reflected light can be received with light quantity higher.Thus, divide The precision of the spectrum analysis of light device 14 is improved, and result is that the certainty of measurement of blooming is improved.
Next, being illustrated to the allocation position of the optical fiber in the 2nd, such as shown in (A) and (B) of Fig. 5, sidelight is irradiated Fine f1 and light optical fiber f2 are in respectively circular row, and the annulus that each optical fiber f1, f2 are constituted is alternately arranged in concentric circles. Also, (A) and (B) of Fig. 5 shows that the allocation position of the allocation position and light optical fiber f2 for making irradiation optical fiber f1 is mutual The structure of reversion, therefore following only the structure illustrated in (A) of Fig. 5 is illustrated.
In the 2nd, as it was previously stated, irradiation optical fiber f1 and light optical fiber f2 is arranged into annular shape respectively, by This, can with uniform light quantity to monitoring substrate Sm in, each several part irradiation light of effective light projector scope, and then, can be with equal The light that even condition reception is reflected by monitoring substrate Sm.
In addition, in the 2nd, maximum incident angle degree is of about 4.2 °, effective incident angle is of about 1.5 °.And then, such as Shown in Fig. 6, in the 2nd, compared with comparative example, operating distance WD is that the relative reflection light quantity in the range of 0~7mm is further Increase.Therefore, in the case of in the scope that operating distance WD is 0~7mm, in the 2nd, compared with comparative example, can Reflected light is received with light quantity higher, as a result, so that the precision of the spectrum analysis of optical splitter 14 is improved, so as to improve optics The certainty of measurement of thickness.
Also, as by each optic fiber configureing into other circular deformations, shown in (A) and (B) of such as Fig. 7, can also examine Consider such structure：It is in the irradiation annulus that is constituted of optical fiber f1, on outermost annulus, with about 90 ° of intervals Irradiation optical fiber f1 is replaced as light optical fiber f2.By carrying out such configuration, in the 2nd, compared with the 1st, light The difference of the ratio shared by ratio and irradiation optical fiber f1 shared by the number of fibers in fine beam, light optical fiber f2 is further Diminish.I.e., in probe functionally, the quantity of the quantity and light optical fiber f2 of preferably irradiating optical fiber f1 is approached, for this Reason, it would however also be possible to employ (A) or optic fiber configureing as (B) of Fig. 7.
Next, being illustrated to the allocation position of the optical fiber in the 3rd.In the 3rd, optical fiber f1 and light are irradiated Optical fiber f2 is not in respectively arc-shaped or circular row, in this with above-mentioned the 1st and the 2nd difference.Specifically Illustrate, in the 3rd, such as shown in (A) and (B) of Fig. 8,5 are configured with every certain interval along the periphery of fibre bundle The irradiation optical fiber f1 that place arranges in substantially V shape, to fill the gap of the irradiation optical fiber f1 and the side in fibre bundle center Formula configures light optical fiber f2, the fibre bundle integrally configuration as round shape.Also, in the 3rd, maximum incident angle degree is of about 8.4 °, effective incident angle is of about 1.5 °.Therefore, in the 3rd, compared with comparative example, maximum incident angle degree and effectively enter Firing angle degree also diminishes, and effective light projector scope also diminishes.Also, (A) and (B) of Fig. 8 shows the configuration for making irradiation optical fiber f1 The structure of the mutual phase reversal of allocation position of position and light optical fiber f2.
More than, film thickness measurement device and film formation device to present embodiment are illustrated, but, present embodiment is only It is but not limit the present invention for making understanding of the invention become an easy example, above-mentioned part, configuration etc., can Various changes, improvement are carried out with according to spirit of the invention, also, the present invention also includes its equivalent certainly.For example, on structure Into the size or very little method, shape, material of each equipment of measured thin film device, the content for describing above is merely used for playing this One example of The effect of invention, does not limit the present invention.
In addition, in the above-described embodiment, as an example of film formation device, to using vacuum vapour deposition film forming Vacuum deposition apparatus 100 are illustrated, but it is also possible to the film formation device that film forming is carried out using ion plating method, utilize Ion-beam evaporation carries out the film formation device application present invention of film forming.In addition, the present invention can also be applied to employ make ion Target is clashed into carry out the film formation device of the sputtering method of film forming.
In addition, in the above-described embodiment, for the purpose of the light receiving efficiency for improving reflected light, using optical pickocff The distance between the terminal surface of probe 13 and the film forming face of monitoring substrate Sm, i.e. operating distance WD turn into the 2 of pencil fibre diameter More than times.But, however it is not limited to this, it is also possible to make the film forming face of the terminal surface of optical pickocff probe 13 and monitoring substrate Sm The distance between less than 2 times of pencil fibre diameter.
In addition, in the above-described embodiment, as monitoring substrate Sm, employing the substrate of annular shape.For example, carry out In the case of the measurement of blooming and the film thickness measuring realized based on quartzy film thickness gauge, circular substrate is effective.This Because, in generally using the film formation device of circular monitoring substrate Sm, for the reason on apparatus structure, can be by stone The configuration of English film thickness gauge is entreated in a device, specifically, can be only fitted to the central corresponding position with substrate holder 2.But, For monitoring substrate Sm, the substrate of annular shape, or the substrate of other shapes, e.g. discoid base are not limited to Plate.
In addition, in the above-described embodiment, during forming multilayer film on actual substrate S, being changed without monitoring base In the case of plate Sm, multilayer film also is formed in monitoring substrate Sm sides, but be not limited to this.I.e., or：It is many whenever being formed During each tunic in tunic, monitoring substrate Sm is changed.But, as it was previously stated, between substrate is monitored, in size, surface state With there is deviation in machining accuracy, if changing monitoring substrate Sm whenever the thickness of each layer is measured, above-mentioned deviation can be to surveying Accuracy of measurement produces influence.At this point, it is preferred that being changed without monitoring substrate Sm during forming multilayer film on actual substrate S.
Also, in the above-described embodiment, carried out as a example by the film formation device of multilayer film is formed on actual substrate S Illustrate, but, the present invention can also be applied to be formed on actual substrate S the device of monofilm.
Label declaration
1：Vacuum tank；
2：Substrate holder；
2a：Opening；
3：Evaporation device；
4：Shutter；
5：Shutter control unit；
6：Film thickness measurement device；
11：Light projector；
12：DC stable power supply；
13：Optical pickocff is popped one's head in；
14：Optical splitter；
15：Amplifier；
16：A/D converter；
17：Signal processing circuit；
21：Light source；
22：Infrared rays receiver；
23：Flexible pipe；
24A：Connector；
24B：Connector；
24C：Intermediate connector；
25：Protection cylinder；
25a：Large-diameter portion；
25b：Minor diameter part；
100：Vacuum deposition apparatus；
f1：Irradiation optical fiber；
f2：Light optical fiber；
PC 1：1st computer；
PC 2：2nd computer；
PLC：Programmable logic controller (PLC)；
S：Actual substrate；
Sm：Monitoring substrate.

Claims (6)

1. a kind of film thickness measurement device, it is characterised in that
The film thickness measurement device possesses：
Irradiation unit, in order to measure the blooming of the film for being formed at measured use substrate, the irradiation unit is by by optical fiber The irradiation optical fiber of composition measured uses substrate irradiation light to described；
Infrared rays receiver, in order to measure the blooming, the infrared rays receiver is received by the light optical fiber being made up of optical fiber From after irradiation unit irradiation by the measured light reflected with substrate；With
Probe, the probe is tied up multiple irradiation optical fibers and multiple light optical fibers and is formed,
The probe is each configured with the opposed faces as end face possessed with the measured side opposed with substrate The end face of multiple irradiation optical fibers and the end face of multiple light optical fibers,
In the opposed faces, be configured with multiple the irradiation optical fibers each end face with all with light described at least one The end face of optical fiber adjacent state alignment is configured with the light optical fibers of multiple into arc-shaped or annular shape Each end face with all with the adjacent state alignment of each end face of optical fiber is irradiated described at least one into arc-shaped or annular shape, The row that the end face of the irradiation optical fiber is constituted and the row that the end face of the light optical fiber is constituted are reversely with each other to constitute The mode of spiral arrange,
In opposed faces and described measured with being not provided with optical component between substrate, the probe with the opposed faces with It is the measured use substrate, opposed positioned at the non-film face of the side opposite with the side for forming the film.
2. film thickness measurement device according to claim 1, it is characterised in that
The multiple described irradiation optical fiber and multiple light optical fibers for constituting the probe constitute end face described opposed Pencil optical fiber concordant on face,
More than 2 times of diameter in the pencil optical fiber of the distance between the opposed faces and film forming face.
3. film thickness measurement device according to claim 2, it is characterised in that
The measured substrate is discoid or circular substrate.
4. film thickness measurement device according to claim 1, it is characterised in that
The film thickness measurement device has：
The irradiation unit；
DC stable power supply, the light source supply DC current that the DC stable power supply possesses to the irradiation unit；
The probe；
Optical splitter, the optical splitter possesses the infrared rays receiver, and output is received by described tested with the infrared rays receiver The corresponding analog signal of light reception intensity during the light that amount is reflected with substrate；
Amplifier, the amplifier is amplified to the analog signal exported from the optical splitter；
The analog signal after being amplified by the amplifier is converted into data signal by A/D converter, the A/D converter；
Electronic computer, the electronic computer is based on the data signal and calculates the blooming；With
Signal processing circuit, the signal processing circuit between the A/D converter and the electronic computer, the letter Number process circuit is used to perform predetermined signal to the data signal when the electronic computer calculates the blooming Treatment.
5. a kind of film formation device, the film formation device by vacuum tank by deposition material be deposited with the surface of substrate and Film is formed on the substrate,
The film formation device is characterised by,
The film formation device possesses：
Evaporation device, the evaporation device is used to evaporate the deposition material；
Opening and closing member, the opening and closing member is in order to cut off the deposition material that the evaporation device is evaporated towards the substrate Travel path during surface and be opened and closed action；
Controlling organization, the controlling organization controls the opening and closing of the opening and closing member；With
The film thickness measurement device described in any one in Claims 1-4,
The substrate and it is described it is measured be accommodated in the vacuum tank with substrate both sides in the state of, in order to by the steaming Plating material is deposited with the surface of the substrate and the measured use substrate both sides, and the evaporation device steams the deposition material Hair, the film thickness measurement device measurement is formed at the blooming of the film of the measured use substrate, the controlling organization The opening and closing of the opening and closing member is controlled to the measurement result of the blooming according to the film thickness measurement device.
6. film formation device according to claim 5, it is characterised in that
During forming multilayer film on the substrate, the same measured use substrate is configured in the vacuum tank, And described measured with also forming the multilayer film on substrate,
The film thickness measurement device successively measures the institute of each tunic being formed in the multilayer film of the measured use substrate State blooming.
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101532239B1 (en) * 2014-02-11 2015-07-01 주식회사 지디 Thickness Mesurement Device Applicable in Glass Etching System
JP5925930B1 (en) 2015-03-18 2016-05-25 日本航空電子工業株式会社 Optical fiber cable assembly and measuring device
JPWO2017135303A1 (en) * 2016-02-02 2018-11-22 コニカミノルタ株式会社 measuring device
US11035741B2 (en) * 2016-04-19 2021-06-15 Tokyo Electron Limited Temperature measurement substrate and temperature measurement system
JP6356372B1 (en) 2017-05-23 2018-07-11 浜松ホトニクス株式会社 Alignment characteristic measurement method, alignment characteristic measurement program, and alignment characteristic measurement apparatus
EP3633351B1 (en) * 2017-05-23 2023-03-29 Hamamatsu Photonics K.K. Orientation characteristic measurement method, orientation characteristic measurement program, and orientation characteristic measurement device
JP6394825B1 (en) * 2018-02-08 2018-09-26 横河電機株式会社 Measuring apparatus and measuring method
CN112176309B (en) * 2020-11-27 2021-04-09 江苏永鼎光电子技术有限公司 Laser direct light control device for film plating machine

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1378646A (en) * 1999-10-08 2002-11-06 美商·音斯楚曼泰森麦翠克斯公司 Optimizing fiber-optical probe for spectroscopic measurements
CN101038183A (en) * 2007-04-23 2007-09-19 华中科技大学 Fibre-optical freezing sensor
CN201748901U (en) * 2009-12-25 2011-02-16 成都南光机器有限公司 Optical film thickness measurement control system
CN102103081A (en) * 2009-12-16 2011-06-22 中国科学院大连化学物理研究所 Optical fiber bundle fluorescent sensor
CN102472611A (en) * 2009-07-03 2012-05-23 株式会社新柯隆 Optical film thickness meter and thin film forming apparatus provided with optical film thickness meter

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5037060U (en) * 1973-07-30 1975-04-18
JPS61145413A (en) * 1984-12-19 1986-07-03 Mitsubishi Rayon Co Ltd Sensing apparatus
JPH06195705A (en) * 1992-10-27 1994-07-15 Sony Corp Method and apparatus for manufacturing magnetic recording medium
US5483347A (en) * 1993-05-19 1996-01-09 Hughes Aircraft Company Non-contact measurement apparatus using bifurcated optical fiber bundle with intermixed fibers
JP2001124526A (en) * 1999-10-29 2001-05-11 Japan Aviation Electronics Industry Ltd Optical film thickness monitoring mechanism
JP2001141563A (en) * 1999-11-17 2001-05-25 Toshiba Corp Spectrometry, its device, temperature measuring device, and film pressure measurement device
JP2003121116A (en) * 2001-10-12 2003-04-23 Optorun Co Ltd Vacuum ultraviolet optical film thickness monitor and vacuum film forming apparatus provided therewith
JP3865303B2 (en) * 2002-02-26 2007-01-10 オリンパス株式会社 Optical film thickness monitoring method and apparatus
US7049156B2 (en) * 2003-03-19 2006-05-23 Verity Instruments, Inc. System and method for in-situ monitor and control of film thickness and trench depth
TWI290614B (en) * 2006-04-21 2007-12-01 Advance Design Technology Inc A measuring apparatus for the thin film thickness using interference technology of laser
JP4813292B2 (en) * 2006-08-25 2011-11-09 株式会社昭和真空 Organic thin film thickness measuring device and organic thin film forming device
TW200839911A (en) * 2007-03-21 2008-10-01 Promos Technologies Inc Method for measuring thickness of film on sidewall of trench in semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1378646A (en) * 1999-10-08 2002-11-06 美商·音斯楚曼泰森麦翠克斯公司 Optimizing fiber-optical probe for spectroscopic measurements
CN101038183A (en) * 2007-04-23 2007-09-19 华中科技大学 Fibre-optical freezing sensor
CN102472611A (en) * 2009-07-03 2012-05-23 株式会社新柯隆 Optical film thickness meter and thin film forming apparatus provided with optical film thickness meter
CN102103081A (en) * 2009-12-16 2011-06-22 中国科学院大连化学物理研究所 Optical fiber bundle fluorescent sensor
CN201748901U (en) * 2009-12-25 2011-02-16 成都南光机器有限公司 Optical film thickness measurement control system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
基于光纤传感技术的钢球表面缺陷检测研究;张永奎;《中国优秀硕士学位论文全文数据库 工程科技II辑》;20111015(第10期);第33页第1-2段，图3.12（a） *

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HK1204490A1 (en) 2015-11-20

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