1290614 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種量測裝置，其特別有關於一種使用雷射 干涉技術量測薄膜厚度之裝置。 【先前技術】 隨著奈米與光電科技的進步，光學薄膜的重要性，也日益受 到重視。沒有光學薄膜的充份配合，絕無目前光電科技蓬勃發= 的結果。在整個光學薄膜技術的發展過程中，鍍膜技術及膜質抬 測技術:直是各先進國家光學薄膜研究者非常重視的發展領域。 在薄膜的膜質檢測技術上，係分為兩種：第一、力學方面， 有膜與基板間之附著力、硬度、内應力等檢測重點。第二、光學 方面’則以量測薄膜之折射率與膜厚為主要目標。特別是目前奈 米電子f奈米光電材料的大幅發展，對於薄膜厚度的控制與檢 =m DRAM、CM0S _氧化層與μ等元 搬太f尺寸皆已進入次微米時代，其林中之薄膜厚度亦降至 同的此’若欲量_騎射率與厚度，可藉由許多不 儀等二H、如·麵偏光儀、探針掃賴、干涉儀、光譜 厚=幾種#測儀器已經可以非常準確的測得薄膜 二價格非常昂責，並不是-般小型公司、 機構或疋個人有犯力可以購買的。舉 其價格约在2CK)萬元新台幣以 ° ’ Μ〜_偏光儀’ 其償格也大於伽萬元《上。因此便宜的光譜膜厚儀， 套間易、可自組裝且便宜 129〇6 J4 p— -------—丨 作年丄月丨曰^更)正替換I 的臈厚量測系統亦值得開發。 — 、一另外’目前市面上之光學干涉測厚儀，除了價格昂貴外，在 測試夾具上’並不十分便利於自組裝。因此，為了解決這個問題， 有需要提供-鋪的4_财度之裝置與方如克贱前技術 的缺it。 【發明内容】 鐘於以上習知技術之問題，本發明提供—種制騎干涉技 厂篁測細厚度之裝置，可細於制各種材料之薄膜。 本發批主要目的在於提供—㈣朗厚裝置，賴精確量 ^膜之厚度並具有低成本、光譜敎度高、亦攜帶與體積小之 1支點0 本翻之另-目的在於提供―種制t射干陳術量測薄膜 予又之方法，用以精確且快速量測薄膜之厚度。 要包含一雷射源；一第一 為達上述之主要目的，本發明提供―種薄動彳厚裝置，其主 透鏡配置於該雷射源之輸出端；一第二 於該第—透鏡之輸出端；—待測單^配置於該第二透鏡 輸出^，以及一影像裳置。 射朵=射1原作為該薄膜測厚裝置之光源；該第—透鏡用於將雷 為發散·，該第二透制於㈣職第—透鏡之雷射光轉換 二ΓΓ射光’麵解摘於作驗爾财度之平台；以及 測i膜m於檢魏該制單元反射之雷射奸雜紋，以量 7 1290614 r-- %年>月次曰修(更)正替換頁 為達上述之另一目的，本發明提供一種薄膜測厚裝置之量測 方法，其步驟包含Α)選擇一適當且可透光之基板；Β)沈積一薄膜 並預留一無薄膜沈積之區域；C)將已沈積薄膜之該待測單元放置 於該薄膜測厚裝置中；以及D)以雷射光照射該待測單元，並以 CCD (Charge Couple Device)攝影機紀錄干涉條紋。 根據本發明之一特徵，該待測單元更包含一基板作為該待測 單元之本體；一固定單元配置於該基板之一端；以及一活動式遮 鲁 罩配置於該固定單元上。 該基板用於將薄膜沈積於該基板上；以及該活動式遮罩用於 阻擋薄膜沈積在該基板上。 為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂， 下文特舉數個較佳實施例，並配合所附圖式，作詳細說明如下。 【實施方式】BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a measuring device, and more particularly to a device for measuring the thickness of a film using a laser interference technique. [Prior Art] With the advancement of nanotechnology and optoelectronic technology, the importance of optical films has also received increasing attention. Without the full cooperation of optical films, there is no result of the current photovoltaic technology. In the development of the entire optical film technology, coating technology and film growth technology: it is a development field that is highly valued by optical film researchers in advanced countries. In the film quality detection technology of the film, there are two types: first, mechanical aspects, the adhesion between the film and the substrate, hardness, internal stress and other detection points. Second, the optical aspect is mainly to measure the refractive index and film thickness of the film. In particular, the current development of nanoelectronics f nano-optical materials, the control and inspection of film thickness = m DRAM, CM0S _ oxide layer and μ, etc. have moved into the sub-micron era, the film in the forest The thickness also drops to the same 'this amount _ riding rate and thickness, can be used by many non-meters such as two H, such as surface polarizer, probe sweep, interferometer, spectral thickness = several # measured instruments have been It is very accurate to measure the price of the film. The price of the film is very high. It is not a small company, institution or individual who has the ability to buy it. The price is about 2CK) NT$ to ° Μ _ _ polarizer ‘the compensation is also greater than the gamma 10,000. Therefore, the cheap spectral thickness gauge, easy to install, self-assemblable and cheap 129〇6 J4 p—--------丨 丄 丨曰 更 ^ more) is replacing the thickness measurement system of I Also worth developing. — An additional optical optic thickness gauge currently on the market, in addition to being expensive, is not very convenient for self-assembly on test fixtures. Therefore, in order to solve this problem, there is a need to provide - the 4 - wealth of the device and the lack of the former technology. SUMMARY OF THE INVENTION In view of the above problems in the prior art, the present invention provides a device for measuring the thickness of a riding interferometer, which can be thinner than a film of various materials. The main purpose of this batch is to provide - (4) thick and thick devices, relying on the precise thickness of the film and having low cost, high spectral intensity, and carrying and small volume of 1 fulcrum. The method of measuring the film by t-drying is used to accurately and quickly measure the thickness of the film. To include a laser source; a first to achieve the above main purpose, the present invention provides a thin moving device, the main lens is disposed at the output end of the laser source; a second to the first lens The output terminal is configured to be disposed on the second lens output ^, and an image is placed. Shooting = shooting 1 original as the light source of the film thickness measuring device; the first lens is used to dilate the lightning, and the second is transmitted to the (four) position - the laser light conversion of the lens is extracted from the surface As a platform for checking the financial assets; and measuring the i film m in the detection of the unit's reflection of the laser traitor, the amount of 7 1290614 r--% year > monthly repair (more) is replacing the page Another object of the present invention is to provide a method for measuring a thin film thickness measuring device, the method comprising: selecting a suitable and light transmissive substrate; depositing a film and preserving a region free of film deposition; And placing the unit to be tested with the deposited film in the film thickness measuring device; and D) irradiating the unit to be tested with laser light, and recording the interference fringe with a CCD (Charge Couple Device) camera. According to a feature of the present invention, the unit to be tested further includes a substrate as a body of the unit to be tested; a fixed unit is disposed at one end of the substrate; and a movable cover is disposed on the fixed unit. The substrate is for depositing a thin film on the substrate; and the movable mask is for depositing a barrier film on the substrate. The above and other objects, features, and advantages of the present invention will become more apparent and understood. [Embodiment]
雖然本發明可表現林同形式之實酬，但賴所示者及於 下文中說明者係為本發明可之較佳實施例，並請了解本文所揭示 者係考量為本發明之-範例，且並非意關以將本發明限制於圖 示及/或所描述之特定實施例中。 本發明之旨在於提供—種使用雷射干涉技術量_膜厚度之 裝置，該裝置具則組裝、祕作、可同時觀游#薄膜厚度高 低起，變似及低成本等伽。請參照第丨圖，如_示為本發 月之薄膜麟I置1Q之結構圖。該薄膜測厚裝置Μ包含有一雷 射源20，一第一透鏡3〇 ; _第二透鏡4〇 ; 一待測單元邓；以及 8 !29〇614 %辱—月^^修％)正替換頁While the present invention may be embodied in the form of a preferred embodiment of the invention, it is to be understood that It is not intended to limit the invention to the particular embodiments illustrated and/or described. SUMMARY OF THE INVENTION The present invention is directed to providing a device for using a laser interference technique, which is assembled, secret, and simultaneously movable. The thickness of the film is high, low, and low. Please refer to the figure in the figure. For example, _ shows the structure of the film of the film I. The film thickness measuring device Μ includes a laser source 20, a first lens 3〇; a second lens 4〇; a unit to be tested Deng; and 8!29〇614% humiliation-month ^^ repair%) is being replaced page
光的輸出端，用於將透過該第—透鏡3〇The output end of the light for transmitting through the first lens 3〇
測薄膜80厚度之平台；以及 ^叫配置於鄰近該第一透鏡3〇之 透鏡30之雷射光轉換為平行雷射 之輸出端，用於作為檢 該影像裝置60用於檢測從該待測單元5〇 鲁條紋，__㈣度。响較，㈣雷 為Fabry-Perot㈣半導體雷射、氣體雷射、單頻半導體雷射_ 雷射)、、垂直共振腔面射型雷射(VCSEL)與單模半導體雷射所組成 之無群中之種。在本發明之最佳實施例中，係採用單模半導體 =α另外’該第-透鏡π係鱗直透鏡；該第二透鏡4〇係為 分光鏡；以及該影像裝置60係為CCD (aiarge C〇uple 攝影 機60。 睛參照第2圖’如圖所示為測試單元之結構圖。該待測單元 50包含有一基板51 ; 一固定單元％ ;以及一活動式遮罩％。其 中’該基板51作為該待測單元5〇之本體，用於將薄膜8〇沈積於 該基板51上；該固定單元52配置於該基板51之一端；以及該活 動式遮罩53配置於該固定單元52上，用於阻擋薄膜80沈積在該 基板51上。需注意的是，該待測單元50之基板51材料係為玻璃。 另外’請參照第3圖以說明該活動式遮罩53之功用。該活動 式遮罩53除了可以阻擔薄膜8〇的沉積，進而形成有薄膜80與無 薄膜80的落差之外，由於該活動式遮罩53與基板51之間尚有一 !290614 广—_— ¥年^月#曝，f)玉替換頁 空隙’所以在有薄膜80與無薄膜8〇的-交接地帶會出現平緩的膜 厚變化。此平緩的膜厚變化有助於判讀當等厚條紋偏離超過一次 明暗變化祕差狀況，使測量的可靠性增加。 在作原理_L i要架構係根據跑咖干涉原理進行測量。 根據光干麵理，在玻璃的表面鍍上—層_初，使光線不再只 被玻璃.空氣界面反射，而是空氣·薄膜8〇、玻璃.空氣等幾個界 面反射’ HJ此產生干涉現象。我們便姻此干涉現絲量測薄膜 | 80的厚度。另外，由於砲咖干涉主要為利用兩反射面具有些微 傾斜角時所形成的等厚條紋來進行測量。在量測薄膜8〇厚度時利 用比較計算有薄膜8G沉積處的等厚條紋以及單獨只有玻璃基板 51所形成的等厚條紋差距即可計算得知薄膜8〇的厚度。因此，此 沉積基板51㈣視®可看歧_基板51具有微則，藉此我 們便可以在CCD攝影機6〇上得到等厚付條紋。此微傾角每公 刀的變化.d设定為./2<· d<10. ’其中，.為雷射光之波長。因 _此，配合參照第2圖中之前視圖，該待測單元5〇之基板51底面 具有一漸進式之傾斜表面。其中，該待測單元5〇之基板51底面 之傾斜角度係介於0.03 mrad與1 mrad之間。 請參照第4圖以說明量測薄膜80厚度之計算方式。根據下列 公式’便可計算出待測薄膜8〇之厚度··a platform for measuring the thickness of the film 80; and an output of the laser light disposed adjacent to the lens 30 of the first lens 3 to be converted into a parallel laser for detecting the image device 60 for detecting the unit to be tested 5 〇 Lu stripes, __ (four) degrees. (4) Ray is a group consisting of Fabry-Perot (four) semiconductor laser, gas laser, single-frequency semiconductor laser _ laser, vertical cavity surface-emitting laser (VCSEL) and single-mode semiconductor laser The species in the middle. In a preferred embodiment of the present invention, a single mode semiconductor = α is additionally used, the second lens 4 is a beam splitter; and the image device 60 is a CCD (aiarge). C〇uple camera 60. The eye refers to FIG. 2' as a structural diagram of the test unit. The unit to be tested 50 includes a substrate 51; a fixed unit%; and a movable mask%. The main body of the unit to be tested is configured to deposit a film 8 on the substrate 51; the fixing unit 52 is disposed at one end of the substrate 51; and the movable mask 53 is disposed on the fixing unit 52. The barrier film 80 is deposited on the substrate 51. It should be noted that the material of the substrate 51 of the unit to be tested 50 is glass. In addition, please refer to FIG. 3 to illustrate the function of the movable mask 53. In addition to the deposition of the film 8 阻, the movable mask 53 can form a gap between the film 80 and the film 80, since there is a 290614 wide between the movable mask 53 and the substrate 51. Year ^ month # exposure, f) jade replacement page gap 'so there is thin 80 with and without the film 8〇 - gradual transition zone will be the film thickness change. This gentle change in film thickness helps to interpret the reliability of the measurement when the contour stripe deviates more than one time. In the principle of _L i, the architecture is measured according to the principle of running coffee interference. According to the dry-drying theory, the surface of the glass is plated with a layer of _ initial, so that the light is no longer only reflected by the glass and air interface, but the air, the film 8 〇, the glass, the air, etc. phenomenon. We are in this way to interfere with the thickness of the silk measuring film | 80. In addition, since the gun interference is mainly measured by using the equal thickness stripe formed when the two reflecting masks have a slight tilt angle. When measuring the thickness of the film 8 利, the thickness of the film 8 即可 can be calculated by comparatively calculating the equal thickness stripe at the deposition of the film 8G and the equal thickness stripe formed by the glass substrate 51 alone. Therefore, the deposition substrate 51 (four) can be seen as a micro-pattern, whereby we can obtain equal-thickness streaks on the CCD camera 6 。. The change in the microtilt angle per knives is set to ./2 <· d < 10. ’ where, is the wavelength of the laser light. Because of this, with reference to the front view in Fig. 2, the bottom surface of the substrate 51 of the unit to be tested 5 has a progressive inclined surface. The inclination angle of the bottom surface of the substrate 51 of the unit to be tested 5 is between 0.03 mrad and 1 mrad. Please refer to FIG. 4 to illustrate the calculation method of measuring the thickness of the film 80. According to the following formula ', the thickness of the film to be tested can be calculated.
h上A 1、 (1) 其中，h為待測薄膜80之厚度；hs(Step height)為在有薄膜80區域 與無薄膜80區域所反射之雷射光所造成之干涉圖形之高低差；以 1290614 ----- 补年夂月ί日修(更)正替換寊 及sf (fringe spacing)為干涉波系度。— 在薄膜測厚裝置10之量測方法，包含有下列步驟：A)選擇一 適當且可透光之基板51，· B)沈積一薄膜8〇並預留一無薄膜沈積之 區域，C)將已沈積薄膜80之該待測單元5〇放置於該薄臈測厚裝 置10中；以及D)以雷射光照射該待測單元5〇，並以ccd攝影機 60紀錄干涉條紋。需注意的是，該步驟A)之基板51材料係為玻 璃，該步驛B)之薄膜80係使用物理氣相沈積法、化學氣相沈積法 # 與熱瘵著沈積法所組成族群中之一種；且無薄膜80沈積之區域可 藉由該待測單元50之該活動式遮罩53控制。 請參照第5圖，如騎示為細⑹厚度與干涉肢之變化。 當CCD攝影機60接收到反射自該制單元5〇之雷射光後，即可 根據薄膜80的外形而顯現出干涉波紋的輪廓。第5圖中舉出三種 不同薄膜80外形之實施例。當入射雷射光射在薄膜8〇表面時， 會被分割為反射和透射兩道雷射光束。透射光在_ 8()的下表面 • 反射後，又經上表面透射，最後回到原來的介質，當它與上表面 的反射光束父豐時，就會產生干涉現象。這種干涉的結果將會造 成空間強度的重新分配產生明暗條紋。我們即可根據這些明暗的 條紋而計算出待測薄膜80之厚度。 綜上所述’本發明所揭示之薄膜測厚裝置10係使用雷射光來 當光源’以創新的測試夾具作為量測薄膜80厚度之平台；與傳統 習知之薄膜測厚儀相比，本發明所揭示之薄膜測厚裝置10具備易 、组裝 '易操作、可同時觀測整片薄膜80厚度高低起伏變化以及低 成本等優點。 11 1290614 吵年丄#日修(更)正替換頁 雖然本發明已以前述較佳實施例揭示，然其並非用以限定本 發明，任何熟習此技藝者，在不脫離本發明之精神和範圍内，當 可作各種之更動與修改。如上述的解釋，都可以作各型式的修正 與變化，而不會破壞此發明的精神。因此本發明之保護範圍當視 後附之申請專利範圍所界定者為準。h1A1, (1) where h is the thickness of the film 80 to be tested; hs (Step height) is the height difference of the interference pattern caused by the laser light reflected in the film 80 region and the film-free region 80; 1290614 ----- The following is the replacement of 寊 and sf (fringe spacing) for the interference wave system. - The method for measuring the film thickness measuring device 10 comprises the steps of: A) selecting a suitable and permeable substrate 51, B) depositing a film 8 〇 and leaving a region free of film deposition, C) The unit to be tested 5A of the deposited film 80 is placed in the thin thickness measuring device 10; and D) the unit to be tested 5 is irradiated with laser light, and the interference fringes are recorded by the ccd camera 60. It should be noted that the material of the substrate 51 in the step A) is glass, and the film 80 in the step B) is in the group consisting of physical vapor deposition, chemical vapor deposition, and thermal deposition. An area where no film 80 is deposited can be controlled by the movable mask 53 of the unit to be tested 50. Please refer to Figure 5, as shown by the ride as a thin (6) thickness and interference with the limb. When the CCD camera 60 receives the laser light reflected from the unit 5, the contour of the interference ripple can be expressed in accordance with the outer shape of the film 80. An example of three different film 80 profiles is illustrated in Figure 5. When incident laser light strikes the surface of the film 8, it is split into two laser beams that reflect and transmit. The transmitted light is on the lower surface of _ 8 (). After reflection, it is transmitted through the upper surface and finally returns to the original medium. When it is reflected by the reflected beam of the upper surface, interference occurs. The result of this interference will result in the redistribution of spatial intensity resulting in light and dark stripes. We can calculate the thickness of the film to be tested 80 based on these light and dark stripes. In summary, the thin film thickness measuring device 10 disclosed in the present invention uses laser light as the light source to use an innovative test fixture as a platform for measuring the thickness of the film 80; the present invention is compared with a conventional thin film thickness gauge. The disclosed film thickness measuring device 10 has the advantages of easy assembly, easy operation, simultaneous observation of the thickness variation of the entire film 80, and low cost. 11 12 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 Inside, when you can make a variety of changes and modifications. As explained above, various modifications and variations can be made without departing from the spirit of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
12 1290614 -1----丨 0年V月y曰修(更)正替換頁 — " Τ'Γ II I -以 -.-.— ......-lT-r·· ~i\wim arnrn^mmmmd 【圖式簡單說明】 為了讓本發明之上述和其他目的、特徵、和優點能更明顯，下 文特舉本發明較佳實施例，並配合所附圖示，作詳細說明如下： 第1圖顯示為本發明之薄膜測厚裝置之結構圖； 第2圖顯示為測試單元之結構圖； 第3圖顯示為測試單元之薄膜沈積示意圖； 第4圖顯示為干涉圖形；以及 I 第5圖顯示為薄膜厚度與干涉條紋之變化。 13 年1月孑日修硬)正替換頁丨 1290614 【主要元件符號說明】 ίο薄膜測厚裝置 20雷射源 30第一透鏡 40第二透鏡 50待測單元 51基板 52固定單元 53活動式遮罩 60影像裝置 80薄膜12 1290614 -1----丨0年V月 y曰修(more) is replacing page—" Τ'Γ II I - by-.-.- ......-lT-r·· ~ BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, and advantages of the present invention will become more apparent from the embodiments of the invention. 1 is a structural view of the film thickness measuring device of the present invention; FIG. 2 is a structural view of the test unit; FIG. 3 is a schematic view showing film deposition of the test unit; FIG. 4 is an interference pattern; I Figure 5 shows the change in film thickness and interference fringes.修 修 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 906 Cover 60 image device 80 film
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