JP4813292B2 - Organic thin film thickness measuring device and organic thin film forming device - Google Patents

Organic thin film thickness measuring device and organic thin film forming device Download PDF

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JP4813292B2
JP4813292B2 JP2006229306A JP2006229306A JP4813292B2 JP 4813292 B2 JP4813292 B2 JP 4813292B2 JP 2006229306 A JP2006229306 A JP 2006229306A JP 2006229306 A JP2006229306 A JP 2006229306A JP 4813292 B2 JP4813292 B2 JP 4813292B2
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和男 宇田川
淳二 城戸
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Showa Shinku Co Ltd
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本発明は、有機薄膜の膜厚測定装置及び有機薄膜形成装置に関し、特に、膜厚を光学的に測定する有機ＥＬ用の光学式膜厚測定装置に関する。   The present invention relates to an organic thin film thickness measuring apparatus and an organic thin film forming apparatus, and more particularly to an optical film thickness measuring apparatus for organic EL that optically measures the film thickness.

有機ＥＬデバイスは、高速応答性、高視認性、薄型化が可能であることから、次世代ディスプレイとして注目されている。図９に示すように、一般的な有機ＥＬは、ガラス基板３０上に透明導電膜３１を形成した後、有機薄膜３２〜３４を形成し、次いで、有機薄膜３４表面に電極３５を積層し、最後に缶３６による封止を行うことで全体を保護している。
このように作製される有機ＥＬ素子は、各有機薄膜３２〜３４を、正孔輸送層、発光層、電子輸送層として機能させ、透明導電膜３１に正電圧、電極３５に負電圧を印加すると、透明電極から注入された正孔と陰極から注入された電子が有機薄膜３３に到達して、電子と正孔の再結合が行われ、そのとき、電気エネルギーが光エネルギーに変換されて有機発光層から光が放出され、ガラス基板３０を透過したEL光３７が外部に放射される。 Organic EL devices are attracting attention as next-generation displays because of their high-speed response, high visibility, and thinness. As shown in FIG. 9, in general organic EL, after forming the transparent conductive film 31 on the glass substrate 30, the organic thin films 32 to 34 are formed, and then the electrode 35 is laminated on the surface of the organic thin film 34, Finally, the whole is protected by sealing with the can 36.
In the organic EL device fabricated in this manner, when each organic thin film 32 to 34 functions as a hole transport layer, a light emitting layer, and an electron transport layer, a positive voltage is applied to the transparent conductive film 31 and a negative voltage is applied to the electrode 35. Then, the holes injected from the transparent electrode and the electrons injected from the cathode reach the organic thin film 33 to recombine the electrons and holes. At that time, the electric energy is converted into light energy and the organic light emission is performed. Light is emitted from the layer, and EL light 37 transmitted through the glass substrate 30 is emitted to the outside.

上述の透明導電膜３１は、一般にはＩＴＯ(Indium-Tin Oxide)薄膜が用いられている。その表面に有機薄膜３２〜３４を積層する場合には、透明導電膜３１が形成されたガラス基板３０を用意し、透明導電膜３１の表面処理を行った後、有機薄膜形成装置の真空槽内に設置する。真空槽内には、少なくとも一個以上の有機材料用蒸発源が配置されており、設置されたガラス基板３０の透明導電膜３１を有機材料用蒸発源に対向させ、該真空槽内を所定圧力まで排気する。前記有機材料用蒸発源には、予め有機蒸発材料を充填しておき、前記有機材料用蒸発源を加熱すると、該真空槽内に該有機蒸発材料の蒸気が放出されるようになる。   The transparent conductive film 31 generally uses an ITO (Indium-Tin Oxide) thin film. When the organic thin films 32 to 34 are laminated on the surface, a glass substrate 30 on which the transparent conductive film 31 is formed is prepared, and after the surface treatment of the transparent conductive film 31 is performed, the inside of the vacuum chamber of the organic thin film forming apparatus Install in. At least one organic material evaporation source is disposed in the vacuum chamber, the transparent conductive film 31 of the installed glass substrate 30 is opposed to the organic material evaporation source, and the inside of the vacuum chamber reaches a predetermined pressure. Exhaust. When the organic material evaporation source is filled in advance with the organic material evaporation source and the organic material evaporation source is heated, the vapor of the organic evaporation material is released into the vacuum chamber.

有機ＥＬデバイスを構成する各機能層の膜厚はデバイスの効率や色純度を支配する主要な要因の一つであり、その膜厚を高精度に制御することは極めて重要である。従来、各層の膜厚制御には水晶式膜厚計が用いられ、水晶センサ上に堆積した膜厚と実基板上の膜厚との相関関係から膜厚制御するのが一般的であるが、蒸発速度の変動や蒸発源に用いる坩堝内の蒸発材料表面の変化に伴う蒸発分布変化により水晶センサ上と実基板上との膜厚相関関係が崩れ、膜厚精度が低下してしまう場合があった。   The film thickness of each functional layer constituting the organic EL device is one of the main factors governing the efficiency and color purity of the device, and it is extremely important to control the film thickness with high accuracy. Conventionally, a crystal thickness meter has been used to control the film thickness of each layer, and it is common to control the film thickness from the correlation between the film thickness deposited on the crystal sensor and the film thickness on the actual substrate. The film thickness correlation between the quartz sensor and the actual substrate may be disrupted due to changes in the evaporation rate due to fluctuations in the evaporation rate and changes in the surface of the evaporation material in the crucible used as the evaporation source. It was.

そこで、水晶センサを用いない膜厚測定方法として、実基板上の膜厚を非接触かつ直接的に計測する方法が提案されている（例えば、特許文献１）。特許文献１には、有機薄膜を形成する有機物に、その成膜工程中に励起光を照射し、それによって励起された蛍光又は反射光を検知し、その蛍光の量又は反射の量に基づいて膜厚を算出・制御する構成が開示されている。   Therefore, as a film thickness measurement method that does not use a quartz sensor, a method for directly and non-contactly measuring the film thickness on an actual substrate has been proposed (for example, Patent Document 1). In Patent Document 1, an organic material that forms an organic thin film is irradiated with excitation light during the film formation process, and fluorescence or reflected light excited thereby is detected. Based on the amount of fluorescence or the amount of reflection. A configuration for calculating and controlling the film thickness is disclosed.

より具体的には、例えば、図１０に示すように、有機物としてＡｌｑ３を用いた場合、波長４００ｎｍの励起光を照射した場合、波長５３０ｎｍ付近に蛍光が顕著に発生することが知られている。この蛍光の強度と膜厚とは単調増加の関係にあり、波長５３０ｎｍでの蛍光強度の時間的変化と膜厚の時間的変化との相関関係を予め計算及び記憶しておき、波長４００ｎｍの励起光の照射と同時に波長５３０ｎｍの蛍光強度を観測しておく。そして、記憶された相関関係からその時点での膜厚を特定し、成膜動作の終了時を決定するものである。
特開２００６−１６６６０号公報 More specifically, for example, as shown in FIG. 10, when Alq3 is used as an organic substance, it is known that fluorescence is remarkably generated in the vicinity of a wavelength of 530 nm when excitation light having a wavelength of 400 nm is irradiated. The fluorescence intensity and the film thickness are in a monotonically increasing relationship, and the correlation between the temporal change in fluorescence intensity and the temporal change in film thickness at a wavelength of 530 nm is calculated and stored in advance, and excitation at a wavelength of 400 nm. Simultaneously with the light irradiation, the fluorescence intensity at a wavelength of 530 nm is observed. Then, the film thickness at that time is specified from the stored correlation, and the end time of the film forming operation is determined.
JP 2006-16660 A

しかし、特許文献１の測定方法は、単一の有機物からなる単層膜の膜厚測定には問題ないが、有機物がドーピング材料を含む場合や複数の有機物からなる多層膜の場合には適していない。有機物がドーピング材料を含む場合を説明すると、例えば、Ａｌｑ３にＤＣＭ２をドーピングした場合、Ａｌｑ３単体では波長４００ｎｍの照射光に対して波長５３０ｎｍに蛍光が発生していたのに対し、ＤＣＭ２をドーピングしたことにより、ＤＣＭ２がその蛍光を吸収してしまい、５３０ｎｍには全く蛍光が発生しなくなることが特許文献１に示されている（同文献図８参照）。被測定物が複数の有機物の積層からなる場合についても同様に、ある有機物が発した蛍光を他の有機物が吸収してしまうなどして正確な測定ができなくなることが予想される。   However, the measuring method of Patent Document 1 has no problem in measuring the thickness of a single layer film made of a single organic material, but is suitable for a case where the organic material contains a doping material or a multilayer film made of a plurality of organic materials. Absent. Explaining the case where the organic material contains a doping material. For example, when Alq3 is doped with DCM2, the Alq3 single substance generates fluorescence at a wavelength of 530 nm with respect to irradiation light with a wavelength of 400 nm, whereas it is doped with DCM2. Thus, it is shown in Patent Document 1 that DCM2 absorbs the fluorescence and no fluorescence is generated at 530 nm (see FIG. 8). Similarly, when the object to be measured is composed of a stack of a plurality of organic substances, it is expected that accurate measurement cannot be performed because other organic substances absorb the fluorescence emitted by one organic substance.

そして、同文献では、ドーピング材料を含む場合には蛍光の測定が困難であることから、励起光に対する反射率を別途測定し、その測定値に対応する膜厚（理論値）と比較するようにしている。なお、図１１は、上記のＡｌｑ３にＤＣＭ２をドーピングした場合の膜厚と反射率との関係を示すものである。しかし、同図に示すように、ホスト材料からの反射光がドーピング材料に吸収され、膜厚の増加に対する反射率の振幅は減衰する特性を示す（即ち、グラフがｘ軸に平行な直線に近づいていく）。従って、この減衰のために、膜厚の増加に伴い正確に膜厚を特定するのがより困難なものとなる。   In this document, since it is difficult to measure fluorescence when a doping material is included, the reflectance with respect to excitation light is separately measured and compared with the film thickness (theoretical value) corresponding to the measured value. ing. In addition, FIG. 11 shows the relationship between the film thickness and the reflectance when the above-mentioned Alq3 is doped with DCM2. However, as shown in the figure, the reflected light from the host material is absorbed by the doping material, and the reflectance amplitude with respect to the increase in film thickness is attenuated (that is, the graph approaches a straight line parallel to the x-axis). To go). Therefore, this attenuation makes it more difficult to specify the film thickness accurately as the film thickness increases.

当然に、単層の有機物がドーピング材料を含む場合だけでなく複数の有機物からなる多層膜の場合についても、ある有機物からの反射光を他の有機物が吸収してしまうことになる。その結果として、膜厚の増加に対する反射率の振幅は減衰してしまうことになり、従って、ある層における膜厚の増加のみならず層数の増加による膜厚の増加に伴い、正確な膜厚測定がより困難なものとなる。
特に本発明で成膜される薄膜は有機ＥＬなどに用いるものであり、赤、青及び緑の３色の発光色に関連する多層薄膜を成膜する場合にも対応しなければならないので、この課題への対処は重要である。 Naturally, not only when the organic material of a single layer contains a doping material but also in the case of a multilayer film composed of a plurality of organic materials, the other organic materials absorb the reflected light from the certain organic material. As a result, the amplitude of the reflectivity with respect to the increase in the film thickness is attenuated. Therefore, as the film thickness increases due to the increase in the number of layers as well as the film thickness in a certain layer, the accurate film thickness increases. Measurement becomes more difficult.
In particular, the thin film formed in the present invention is used for organic EL and the like, and it is necessary to cope with the case of forming a multilayer thin film related to three emission colors of red, blue and green. Dealing with issues is important.

また、この関数を求めるには多くの計算要素（照射光強度、その照射強度に対する各有機物の蛍光強度、その蛍光強度に対する各有機物の吸光度等）を要するので誤差要因が増えることになり、この関数を正確に求めるのが難しくなる。
またさらに、別の問題として、成膜中の構造体に励起光を照射して蛍光を発光させることによる構造体の劣化が懸念される。原理上明確ではないが、一度励起させた構造体においては、膜厚を正確に制御できたとしても、構造体の膜厚以外の特性について所望の化学的性能又は有機ＥＬとしての所望の発光特性を得られない場合があった。 Moreover, since many calculation elements (irradiation light intensity, fluorescence intensity of each organic substance with respect to the irradiation intensity, absorbance of each organic substance with respect to the fluorescence intensity, etc.) are required to obtain this function, an error factor increases. It becomes difficult to calculate accurately.
Furthermore, as another problem, there is a concern about deterioration of the structure caused by emitting fluorescence by irradiating the structure being formed with excitation light. Although it is not clear in principle, in a structure once excited, even if the film thickness can be accurately controlled, desired chemical performance or desired light emission characteristics as an organic EL with respect to characteristics other than the film thickness of the structure There was a case that I could not get.

本発明では、上記の問題点を解決するため、励起波長を含まない照射光を用いて膜厚の測定・制御を行うことを基本的なコンセプトとしている。
本発明の第１の側面は、構造体に成膜される有機薄膜の膜厚を測定する膜厚測定装置であって、少なくとも成膜中に構造体に所定の波長の照射光を投光する手段、照射光に対する構造体からの反射光強度又は透過光強度を検出する手段、及びその反射光強度又は透過光強度に基づいて有機薄膜の膜厚を特定する手段からなり、所定の波長が、有機薄膜を構成する有機物の吸収スペクトルについて、吸光度のピーク値に対して２０％以下、好ましくは１０％以下、の吸光度を与える波長範囲に含まれるようにした。 In the present invention, in order to solve the above problems, the basic concept is to measure and control the film thickness using irradiation light that does not include an excitation wavelength.
A first aspect of the present invention is a film thickness measuring device for measuring the film thickness of an organic thin film formed on a structure, and projects irradiation light of a predetermined wavelength onto the structure at least during the film formation. Means for detecting the reflected light intensity or transmitted light intensity from the structure with respect to the irradiation light, and means for specifying the film thickness of the organic thin film based on the reflected light intensity or transmitted light intensity, and the predetermined wavelength is The absorption spectrum of the organic matter constituting the organic thin film was included in a wavelength range that gives an absorbance of 20% or less, preferably 10% or less, with respect to the absorbance peak value.

ここで、膜厚を特定する手段が、有機物についての反射光強度又は透過光強度と有機薄膜の膜厚との関係を示す理論値が記憶されたメモリ、及び受光器で検出された反射光強度又は透過光強度と理論値に基づいて有機物の膜厚を求めるプロセッサを備える構成とした。なお、理論値を表す関数は膜厚に対する反射光強度又は透過光強度の減衰のない（又は小さい）関数である。   Here, the means for specifying the film thickness is a memory in which a theoretical value indicating the relationship between the reflected light intensity or transmitted light intensity of the organic substance and the film thickness of the organic thin film is stored, and the reflected light intensity detected by the light receiver. Or it was set as the structure provided with the processor which calculates | requires the film thickness of organic substance based on a transmitted light intensity and a theoretical value. The function representing the theoretical value is a function without (or small) attenuation of the reflected light intensity or the transmitted light intensity with respect to the film thickness.

さらに、構造体に複数の有機物の層からなる有機薄膜が形成される場合、所定の波長が、それら複数の有機物の各吸収スペクトルについて、吸光度のピーク値に対して２０％以下、好ましくは１０％以下、の吸光度を与える波長範囲に含まれるようにした。   Furthermore, when an organic thin film composed of a plurality of organic layers is formed on the structure, the predetermined wavelength is 20% or less, preferably 10%, with respect to the absorbance peak value for each absorption spectrum of the plurality of organic materials. In the following, it was included in the wavelength range giving the absorbance.

本発明の第２の側面は、有機薄膜形成装置であって、上記第１の側面の膜厚測定装置、真空槽、真空槽内部で有機物を蒸発させる１以上の蒸発源、及び膜厚測定装置による測定結果に基づいて有機薄膜形成の終了タイミングを決定する制御手段からなる有機薄膜形成装置である。   A second aspect of the present invention is an organic thin film forming apparatus, the film thickness measuring apparatus of the first aspect, a vacuum chamber, one or more evaporation sources for evaporating organic matter inside the vacuum chamber, and a film thickness measuring device. It is an organic thin film formation apparatus which consists of a control means which determines the completion | finish timing of organic thin film formation based on the measurement result by.

本発明第３の側面は、構造体に成膜される有機薄膜の膜厚を測定する膜厚測定方法であって、投光手段によって成膜中に構造体に所定の波長の照射光を投光するステップ、受光手段によって照射光に対する構造体からの反射光強度又は透過光強度を検出するステップ、並びに受光手段に接続されたコンピュータによって、受光手段によって検出された反射光強度又は透過光強度及びコンピュータに予め記憶した反射光強度又は透過光強度と膜厚との関係の理論値に基づいて、有機薄膜の膜厚を特定するステップからなり、所定の波長を、有機薄膜を構成する有機物の吸収スペクトルについて、吸光度のピーク値に対して２０％以下、好ましくは１０％以下、の吸光度を与える波長範囲に含まれるように選択した。   According to a third aspect of the present invention, there is provided a film thickness measuring method for measuring a film thickness of an organic thin film formed on a structure, wherein a light having a predetermined wavelength is projected onto the structure during film formation by a light projecting unit. A step of detecting light, a step of detecting a reflected light intensity or transmitted light intensity from the structure with respect to irradiation light by the light receiving means, and a reflected light intensity or transmitted light intensity detected by the light receiving means by a computer connected to the light receiving means; It consists of the step of specifying the film thickness of the organic thin film based on the theoretical value of the relationship between the reflected light intensity or transmitted light intensity and the film thickness stored in advance in the computer, and absorbs a predetermined wavelength of the organic matter constituting the organic thin film. The spectrum was selected so as to be included in a wavelength range giving an absorbance of 20% or less, preferably 10% or less, with respect to the absorbance peak value.

本発明は膜厚の測定に際して励起波長を含まない照射光を用いるようにしたので、照射光の吸収が起こらず、複数の有機物からなる多層膜やドーピングが行われた有機物からなる薄膜に対しても正確に膜厚を測定・制御できる。
さらに、照射光の吸収が起こらない波長を用いているので、膜厚が増加しても反射率の減衰がなく（又は少なく）、例えば多層膜を形成した結果膜厚が大きくなっても正確に膜厚測定を行うことができる。これより、膜厚が大きい場合でも高い成膜精度を得ることができる。
従って、複数の有機物を用いて比較的厚みが大きい多層膜を成膜する場合に本発明は特に有用である。また、有機物を励起させないので蛍光による構造物の劣化を回避できる。 Since the present invention uses irradiation light that does not include an excitation wavelength when measuring the film thickness, absorption of irradiation light does not occur, and a multilayer film made of a plurality of organic substances or a thin film made of a doped organic substance is used. Can accurately measure and control film thickness.
Furthermore, since a wavelength at which irradiation light absorption does not occur is used, there is no attenuation (or less) in reflectance even when the film thickness increases. For example, even if the film thickness increases as a result of forming a multilayer film, it is accurate. The film thickness can be measured. Accordingly, even when the film thickness is large, high film formation accuracy can be obtained.
Therefore, the present invention is particularly useful when a multilayer film having a relatively large thickness is formed using a plurality of organic substances. In addition, since organic substances are not excited, deterioration of the structure due to fluorescence can be avoided.

図１は本発明の一実施形態を説明する有機薄膜形成装置であり、真空槽１を有している。該真空槽１の底面には独立する複数の有機蒸発源４が配置されており、天井側には基板ホルダ３が配置されている。同図では有機蒸発源４を２つ設けているが、蒸発源の数は適宜選択すればよい。各有機蒸発源４は、容器内に充填した有機蒸発材料５を蒸発又は昇華させ、真空槽１内に蒸気１７を発生させる。有機蒸発源４には、例えばセラミックス等により構成される坩堝の周囲に抵抗加熱ヒータを巻回し、通電加熱により蒸気を発生させる蒸発源等を用いればよい。あるいはこれ以外の加熱方法、材質、構造であってもよい。容器内には、例えば図３Aおよび図３Bに示す粉末状の昇華性有機化合物であるAlq３[Tris(８-hydroxy-quinoline)alminium]やα-NPD[N,N'-di-α-naphthyl-N,N'-diphenyl-[１,１'-biphenyl]-４,４'-diamine等の有機蒸発材料を充填すればよい。   FIG. 1 shows an organic thin film forming apparatus for explaining an embodiment of the present invention, which has a vacuum chamber 1. A plurality of independent organic evaporation sources 4 are disposed on the bottom surface of the vacuum chamber 1, and a substrate holder 3 is disposed on the ceiling side. Although two organic evaporation sources 4 are provided in the figure, the number of evaporation sources may be appropriately selected. Each organic evaporation source 4 evaporates or sublimates the organic evaporation material 5 filled in the container, and generates a vapor 17 in the vacuum chamber 1. For the organic evaporation source 4, for example, an evaporation source that wraps a resistance heater around a crucible made of ceramics and generates steam by energization heating may be used. Alternatively, other heating methods, materials, and structures may be used. In the container, for example, Alq3 [Tris (8-hydroxy-quinoline) alminium] or α-NPD [N, N'-di-α-naphthyl-] which is a powdery sublimable organic compound shown in FIGS. 3A and 3B is used. An organic evaporation material such as N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine may be filled.

前記基板ホルダ３下の近接位置上には基板２を設置し、基板２下には成膜領域を制限するマスク６を配置する。以下、基板２上に堆積され有機薄膜機能素子を構成する部分を、素子の形成段階であるものも含めて以下構造体と称する。マスク６に、本出願人の提案する特願２００３−３９０３１９号開示のコンビナトリアル用マスクを用いれば、複数の素子を効率良く成膜することも可能となる。   A substrate 2 is placed on a close position under the substrate holder 3, and a mask 6 for restricting a film formation region is placed under the substrate 2. Hereinafter, the portion constituting the organic thin film functional element deposited on the substrate 2 is hereinafter referred to as a structure including the element forming stage. If the combinatorial mask disclosed in Japanese Patent Application No. 2003-390319 proposed by the present applicant is used for the mask 6, a plurality of elements can be formed efficiently.

基板２と有機蒸発源４の間には該蒸気を遮蔽するシャッター７が開閉自在に配置され、制御装置１６に制御される。また、基板蒸発源間には、蒸気１７の蒸発速度を検出する蒸着速度検出手段１５が配置される。蒸着速度検出手段１５には、例えば、堆積する物質量の時系列変化を検出しうる手段の中で好適なものとして水晶振動子を利用し、水晶振動子の固有振動数の変化から蒸着速度を検出すればよい。蒸着速度検出手段１５は蒸着速度を制御装置１６に出力し、制御装置１６は蒸発源４を制御して蒸発速度を安定させる。   A shutter 7 that shields the vapor is disposed between the substrate 2 and the organic evaporation source 4 so as to be openable and closable, and is controlled by the control device 16. Further, a deposition rate detecting means 15 for detecting the evaporation rate of the vapor 17 is disposed between the substrate evaporation sources. For the vapor deposition rate detecting means 15, for example, a quartz resonator is used as a suitable means capable of detecting a time-series change in the amount of deposited material, and the vapor deposition rate is determined from the change in the natural frequency of the quartz resonator. What is necessary is just to detect. The vapor deposition rate detection means 15 outputs the vapor deposition rate to the control device 16, and the control device 16 controls the evaporation source 4 to stabilize the evaporation rate.

ガラス基板２近傍にはY分岐形状光ファイバ８のバンドルされた先端１１が配置される。Y分岐形状光ファイバ８の分岐した一端の光ファイバ９は光源１２に接続され、他端の光ファイバ１０は光検知器１３に接続される。光源１２は、任意の波長範囲の光又は任意の単一波長の光を選択して投光する手段を有し、光検知器１３は、受光した光を波長分離して光強度を感知する分光光度計のような光強度感知手段を有するが、波長分離の機能は必ずしも必要ではない。光ファイバ８は、先端１１からガラス基板２に光を照射し、ガラス基板２からの反射光を、同じく光ファイバ８の先端１１で集光する。光の照射および集光は例えば基板２上に形成される構造体のデッドポイントにより行えばよい。実施例では、実基板の膜厚又は材料組成を実測することにより成膜精度を向上させているが、モニターガラスを用意し、モニターガラス上近傍に前記光ファイバ８を設置して計測、制御を行うことも可能である。光検知器１３は、コンピュータ１４に接続され、コンピュータ１４は制御装置１６に接続される。   Near the glass substrate 2, a bundled tip 11 of the Y-branch optical fiber 8 is disposed. The branched optical fiber 9 at one end of the Y-branched optical fiber 8 is connected to a light source 12, and the optical fiber 10 at the other end is connected to a photodetector 13. The light source 12 has means for selecting and projecting light of an arbitrary wavelength range or light of an arbitrary single wavelength, and the light detector 13 is a spectroscope that senses light intensity by wavelength-separating the received light. Although it has a light intensity sensing means such as a photometer, the function of wavelength separation is not necessarily required. The optical fiber 8 irradiates the glass substrate 2 with light from the tip 11, and collects reflected light from the glass substrate 2 at the tip 11 of the optical fiber 8. Light irradiation and light collection may be performed, for example, according to a dead point of a structure formed on the substrate 2. In the embodiment, the film forming accuracy is improved by actually measuring the film thickness or material composition of the actual substrate. However, a monitor glass is prepared, and the optical fiber 8 is installed in the vicinity of the monitor glass to perform measurement and control. It is also possible to do this. The light detector 13 is connected to a computer 14, and the computer 14 is connected to a control device 16.

コンピュータ１４は、光検知器１３からの反射光強度の時系列変化が入力される（図示しない）プロセッサ、及び反射光強度と膜厚との関係が理論値として格納される（図示しない）メモリを含む。測定は、プロセッサの入力を実測値として、予めメモリに記憶されたプログラムにより計算された理論値又はメモリに記憶されたテーブルに基づく理論値とを逐次比較することにより行う。
なお、ここでいう時系列変化とは、予め設定された蒸着速度に、蒸着開始からの経過時間を乗じて得られたパラメータに対する入射光強度の変化のことをいう。同様に、理論値とは、上記パラメータに基づいて算出又は参照される入射光強度の値である。 The computer 14 has a processor (not shown) to which the time-series change of the reflected light intensity from the light detector 13 is inputted, and a memory (not shown) in which the relationship between the reflected light intensity and the film thickness is stored as a theoretical value. Including. The measurement is performed by sequentially comparing a theoretical value calculated by a program stored in the memory in advance or a theoretical value based on a table stored in the memory with the input of the processor as an actual measurement value.
Here, the time series change means a change in incident light intensity with respect to a parameter obtained by multiplying a preset deposition rate by an elapsed time from the start of deposition. Similarly, the theoretical value is a value of incident light intensity calculated or referred to based on the above parameters.

制御装置１６は、コンピュータ１４の出力する膜厚の実測値をもとに蒸発源４又はシャッター７を制御する。具体的には、コンピュータ１４が前記プログラムを用いて算出する理論値に対して予め目標範囲を設定し、実測値が目標範囲内となるようにあるいは実測値が目標範囲内となった時点で成膜を終了させるように制御すればよい。   The control device 16 controls the evaporation source 4 or the shutter 7 based on the actually measured value of the film thickness output from the computer 14. Specifically, a target range is set in advance for the theoretical value calculated by the computer 14 using the program, and the measurement is performed when the measured value falls within the target range or when the measured value falls within the target range. What is necessary is just to control so that a film | membrane may be complete | finished.

なお、実施例でY分岐光ファイバ８を用いることにより、真空槽内部への導入ポートを１つにすることが可能となり構成の簡略化に貢献するが、光源から導出する光ファイバ９と光検知器１３に導入する光ファイバ１０をそれぞれ独立に設けて導入ポートを２つにしてもよい。この場合光の出射位置と入射位置を別に設ければよい。また、光検知器１３に接続する光ファイバ１０と基板２との間に集光レンズを配置することや、波長カットフィルタを配置することも考えられる。   In addition, by using the Y branch optical fiber 8 in the embodiment, it is possible to make one introduction port into the vacuum chamber and contribute to simplification of the configuration. However, the optical fiber 9 derived from the light source and the light detection are used. The optical fibers 10 to be introduced into the device 13 may be provided independently to provide two introduction ports. In this case, the light emission position and the incident position may be provided separately. It is also conceivable to arrange a condensing lens or a wavelength cut filter between the optical fiber 10 connected to the light detector 13 and the substrate 2.

ここで、照射光の選択について説明する。
本発明では構造体に照射する光の波長は、吸収を起こさない帯域で選択される。より具体的には、照射光の波長を、有機物の吸収スペクトルにおいて吸光度のピーク値に対して所定値以下の吸光度を与える波長範囲に含まれるように選択する。 Here, selection of irradiation light will be described.
In the present invention, the wavelength of light applied to the structure is selected in a band that does not cause absorption. More specifically, the wavelength of the irradiation light is selected so as to be included in a wavelength range that gives an absorbance of a predetermined value or less with respect to the absorbance peak value in the absorption spectrum of the organic matter.

まず、有機物Ａｌｑ３の単層の場合について説明する。図２に有機物がＡｌｑ３の場合の照射光波長に対する吸光度を示す。照射光の波長が４００ｎｍ付近で吸光度がピークとなり、波長が４５０ｎｍ以上では吸収が少なくなり、５００ｎｍ以上ではほとんど吸収がない。図３に波長５００ｎｍの照射光を投光した場合の有機物Ａｌｑ３の膜厚と反射率との関係を示す。図示するように、膜厚に対する反射率は（実測でも理論計算においても）ほとんど減衰のない関数となる。そして、図４に示すように、図３を予め設定された蒸発速度に基づいて時間軸のグラフとすることもできる。
なお、図３又は図４で示す反射率の数値（％）は測定の便宜のため適宜スケーリングしたものであり、グラフ中での相対値を示すものである。以降の反射率を示す各グラフについても同様である。 First, the case of a single layer of organic substance Alq3 will be described. FIG. 2 shows the absorbance with respect to the irradiation light wavelength when the organic substance is Alq3. Absorbance peaks when the wavelength of the irradiated light is around 400 nm, and the absorption decreases when the wavelength is 450 nm or more, and there is almost no absorption when the wavelength is 500 nm or more. FIG. 3 shows the relationship between the film thickness of the organic substance Alq3 and the reflectance when irradiation light with a wavelength of 500 nm is projected. As shown in the figure, the reflectivity with respect to the film thickness is a function with almost no attenuation (in both actual measurement and theoretical calculation). And as shown in FIG. 4, FIG. 3 can also be made into a time-axis graph based on the preset evaporation rate.
Incidentally, the numerical value (%) of the reflectance shown in FIG. 3 or FIG. 4 is appropriately scaled for convenience of measurement, and indicates a relative value in the graph. The same applies to each graph showing the subsequent reflectance.

このように、吸収の起こらない波長の照射光を用いることにより、減衰のない（又は少ない）関数に基づいて膜厚制御を行うことができる。従って、膜厚が大きい場合、即ち、グラフの横軸の原点から数波先に目標ポイントがあるような場合でも、正確な膜厚測定を行うことができる。   In this way, by using irradiation light having a wavelength that does not cause absorption, the film thickness can be controlled based on a function without attenuation (or little). Accordingly, accurate film thickness measurement can be performed even when the film thickness is large, that is, when the target point is several waves ahead from the origin of the horizontal axis of the graph.

表１に、照射光の波長、吸光度のピークに対する割合、及びその評価を示す。なお、評価における○は、図３又は４に相当するグラフにおいてほとんど減衰のない関数となるもの、△は関数に多少の減衰はあるものの一般的な水晶式の膜厚計よりも同じ成膜条件下での膜厚精度が高いもの、×は水晶式の膜厚計よりも膜厚精度が低いものを示している。

Figure 0004813292
Table 1 shows the wavelength of the irradiated light, the ratio of the absorbance to the peak, and the evaluation thereof. In the evaluation, ○ is a function with almost no attenuation in the graph corresponding to FIG. 3 or 4, and Δ is the same film formation condition as that of a general crystal type film thickness meter although there is some attenuation in the function. The film thickness accuracy below is high, and x indicates that the film thickness accuracy is lower than that of a quartz-type film thickness meter.
Figure 0004813292

先に述べたように、本発明の構造体は主に有機ＥＬ等に用いるものであるから、通常は赤、緑及び青色発光用の有機物の薄膜が積層される。そこで、次に多層膜の場合について説明する。なお、上述してきたＡｌｑ３は緑色発光用であり、青色発光用有機物にはα−ＮＰＤ、赤色発光用有機物にはホスト材料をＡｌｑ３、ドーピング材料をＤＣＭ１０％とした有機物（以下、「Ａｌｑ３＋ＤＣＭ１０％」という）を用いる。ここで、上記３つの有機物を積層した多層膜の場合、全ての有機物に対して吸収（即ち、蛍光）を起こさない照射光波長を選択する必要がある。   As described above, since the structure of the present invention is mainly used for an organic EL or the like, usually, organic thin films for emitting red, green and blue light are laminated. Then, the case of a multilayer film will be described next. The Alq3 described above is for green light emission, the organic material for blue light emission is α-NPD, the organic material for red light emission is Alq3 as the host material, and the doping material is 10% DCM (hereinafter referred to as “Alq3 + DCM10%”). ) Is used. Here, in the case of a multilayer film in which the above three organic substances are laminated, it is necessary to select an irradiation light wavelength that does not cause absorption (that is, fluorescence) with respect to all the organic substances.

ここで、Ａｌｑ３の場合と同様に、α−ＮＰＤ単層、及びＡｌｑ３＋ＤＣＭ１０％単層の特性について説明する。図５にα−ＮＰＤ及びＡｌｑ３＋ＤＣＭ１０％の照射光波長に対する吸収スペクトルを示す。なお、比較のためＡｌｑ３の吸収スペクトルも併せてプロットしてある。
表２及び表３に、それぞれα−ＮＰＤ及びＡｌｑ３＋ＤＣＭ１０％の場合の照射光の波長、吸光度のピークに対する割合、及びその評価を示す。なお、評価の基準は先に示した表1と同様である。

Figure 0004813292

Figure 0004813292
 Here, as in the case of Alq3, the characteristics of the α-NPD single layer and the Alq3 + DCM 10% single layer will be described. FIG. 5 shows absorption spectra with respect to the irradiation light wavelength of α-NPD and Alq3 + DCM 10%. For comparison, the absorption spectrum of Alq3 is also plotted.
Tables 2 and 3 show the wavelength of irradiated light, the ratio to the absorbance peak, and the evaluation in the case of α-NPD and Alq3 + DCM 10%, respectively. The evaluation criteria are the same as in Table 1 shown above.
Figure 0004813292
Figure 0004813292

また、図６（ａ）及び（ｂ）にそれぞれ波長４００ｎｍ及び波長５００ｎｍの照射光を投光した場合の有機物α−ＮＰＤの膜厚と反射率との関係を示す。図６（ａ）、（ｂ）にそれぞれ示すように、吸光度がピークの２４％（表２参照）の場合には減衰が大きく、ピークの０％（表２参照）では減衰がないことが分かる。   FIGS. 6A and 6B show the relationship between the film thickness of the organic α-NPD and the reflectance when irradiation light having a wavelength of 400 nm and a wavelength of 500 nm is projected, respectively. As shown in FIGS. 6 (a) and 6 (b), it can be seen that when the absorbance is 24% of the peak (see Table 2), the attenuation is large, and when the absorbance is 0% (see Table 2), there is no attenuation. .

表１〜３に示すように、単層の場合、照射光の波長を、各有機物の吸収スペクトルにおいて吸光度のピーク値に対して２０％以下の吸光度を与える波長範囲に含まれるよう選択することが必須であり、より好ましくは１０％以下の吸光度を与える波長範囲に含まれるよう選択することが望ましい。そして、多層膜の場合においても、上記３つの有機物を積層した多層膜の場合、全ての有機物に対して吸収（即ち、蛍光）を起こさない照射光波長を選択すればよい。   As shown in Tables 1 to 3, in the case of a single layer, the wavelength of irradiation light may be selected so as to be included in a wavelength range that gives an absorbance of 20% or less with respect to the peak value of absorbance in the absorption spectrum of each organic matter. It is essential, and more preferably, it is selected to be included in a wavelength range that gives an absorbance of 10% or less. Even in the case of a multilayer film, in the case of a multilayer film in which the above three organic substances are laminated, it is only necessary to select an irradiation light wavelength that does not cause absorption (that is, fluorescence) with respect to all the organic substances.

具体的には、図５及び表１〜３を参照して、照射光波長を５７５ｎｍとすれば、吸光度はＡｌｑ３及びα−ＮＰＤの吸光度ピークに対して約０％であり、Ａｌｑ３＋ＤＣＭ１０％に対して１９％であるので、問題なく測定できる。さらに、照射光波長を５９０ｎｍ以上とすれば、全ての有機物の吸光度ピークに対して１０％以下となるのでより好ましい。
なお、上記実施例において、選択する照射光波長の上限は可視光の範囲、即ち、約８００ｎｍ以下であればよい。 Specifically, referring to FIG. 5 and Tables 1 to 3, when the irradiation light wavelength is 575 nm, the absorbance is about 0% with respect to the absorbance peaks of Alq3 and α-NPD, and with respect to Alq3 + DCM of 10%. Since it is 19%, it can be measured without problems. Furthermore, if the irradiation light wavelength is set to 590 nm or more, it is more preferable because it becomes 10% or less with respect to the absorbance peak of all organic substances.
In the above embodiment, the upper limit of the irradiation light wavelength to be selected may be in the visible light range, that is, about 800 nm or less.

なお、吸収を起こさない波長における膜厚と反射率の関係については、基板の屈折率をｎｇ、薄膜の屈折率をｎｍ、薄膜の厚さをｄ、波長をλとして、
δ＝（２π／λ）ｎｍｄとした場合、
膜厚ｄに対する反射率Ｒ(ｄ)は、
Ｒ(ｄ)＝１−４ｎｍ ２ｎｇ／｛ｎｍ ２（１＋ｎｇ）２＋（１−ｎｍ）２（ｎｇ ２−ｎｍ ２）Ｓｉｎ２δ｝
と表せることが知られている。
上式から分かるように、膜厚ｄの増加に対して単層膜の反射率Ｒ(ｄ)の振幅は減衰することはない。
ここで、多層膜の反射率は各単層の反射率Ｒ(ｄ)に対応する四端子行列の積で表されることから、多層膜においても、層数又は膜厚ｄの増加に対して反射率の振幅は減衰することはない。また、わずかに吸収があり反射率に減衰的な要素が加わったとしても上式が支配的である範囲であれば、ほとんど減衰しない関数を得ることができる。 Note that the relationship between the film thickness and the reflectance at a wavelength that does not cause absorption, a n g refractive index of the substrate, the refractive index n m of the thin film, the thickness of the thin film d, the wavelength lambda,
When δ = (2π / λ) n m d,
The reflectance R (d) with respect to the film thickness d is
R (d) = 1-4n m 2 n g / {n m 2 (1 + n g) 2 + (1-n m) 2 (n g 2 -n m 2) Sin 2 δ}
It is known that
As can be seen from the above equation, the amplitude of the reflectivity R (d) of the single layer film does not attenuate as the film thickness d increases.
Here, since the reflectance of the multilayer film is expressed by the product of the four-terminal matrix corresponding to the reflectance R (d) of each single layer, even in the multilayer film, the increase in the number of layers or the film thickness d The amplitude of the reflectance is not attenuated. In addition, even if there is a slight absorption and an attenuating factor is added to the reflectance, a function that hardly attenuates can be obtained as long as the above equation is dominant.

このように、複数の有機材料による多層膜の成膜においても、いずれの有機材料に対しても吸収の起こらない波長の照射光を用いれば、膜厚が増加しても振幅がほとんど減衰しない反射率を得ることができる。そして、有機薄膜を積層した結果として膜厚が増加しても、膜厚測定の精度は維持され、成膜精度は低下しない。   In this way, even in the formation of a multilayer film using a plurality of organic materials, if irradiation light having a wavelength that does not absorb any of the organic materials is used, the reflection is hardly attenuated even when the film thickness is increased. Rate can be obtained. And even if a film thickness increases as a result of laminating | stacking an organic thin film, the precision of a film thickness measurement is maintained and the film-forming precision does not fall.

図７（ａ）及び（ｂ）に厚さ４０ｎｍのα−ＮＰＤ、厚さ６０ｎｍのＡｌｑ３及び厚さ２０ｎｍの電荷発生層からなる多層膜に対して、波長４００ｎｍの照射光を投光した場合の反射率を示す。図７（ａ）に上記３種を１ユニット積層したものを示し、図７（ｂ）に１０ユニット積層したものを示す。また、図８（ａ）及び（ｂ）に、照射光の波長を５００ｎｍとした場合の反射率を示す（他の条件は図７（ａ）及び（ｂ）と同じである）。表１及び表２を参照すると、波長４００ｎｍではＡｌｑ３及びα−ＮＰＤ双方で吸収が起こってしまうため、図７（ｂ）に示すように、層数が増えて膜厚が大きくなるにつれて反射率は大きく減衰する。一方、同様に表１及び表２を参照すると、波長５００ｎｍではＡｌｑ３については吸光度がピークの約７％であり、α−ＮＰＤについては吸光度がピーク対して０％であり吸収は起こらない。従って、図８（ｂ）に示すように、層数が増えて膜厚が大きくなっても反射率は減衰することなく、膜厚測定に好適であることが分かる。   FIGS. 7A and 7B show a case where irradiation light having a wavelength of 400 nm is projected onto a multilayer film composed of α-NPD having a thickness of 40 nm, Alq3 having a thickness of 60 nm, and a charge generation layer having a thickness of 20 nm. Reflectance is shown. FIG. 7 (a) shows a stack of 1 unit of the above three types, and FIG. 7 (b) shows a stack of 10 units. 8A and 8B show the reflectance when the wavelength of irradiation light is 500 nm (other conditions are the same as those in FIGS. 7A and 7B). Referring to Tables 1 and 2, since absorption occurs in both Alq3 and α-NPD at a wavelength of 400 nm, the reflectance increases as the number of layers increases and the film thickness increases as shown in FIG. Attenuates greatly. Similarly, referring to Tables 1 and 2, at a wavelength of 500 nm, Alq3 has an absorbance of about 7% of the peak, and α-NPD has an absorbance of 0% of the peak and no absorption occurs. Therefore, as shown in FIG. 8B, it can be seen that the reflectance is not attenuated even when the number of layers is increased and the film thickness is increased, which is suitable for film thickness measurement.

なお、上記実施例では先端１１が基板２からの反射光を測定する構成を示したが、基板２の透過光を測定するように構成してもよい。この場合、先端１１について投光側と受光側とを分離し、投光側と受光側とが基板を挟んで対向するように配置すればよい。そして、反射率と透過率とは略反比例の関係にあるのでその特性を利用すればよい。   In the above embodiment, the tip 11 measures the reflected light from the substrate 2. However, the tip 11 may measure the transmitted light of the substrate 2. In this case, the light projecting side and the light receiving side of the tip 11 may be separated, and the light projecting side and the light receiving side may be arranged so as to face each other with the substrate interposed therebetween. Since the reflectance and the transmittance are in an approximately inversely proportional relationship, the characteristics may be used.

本発明による有機薄膜形成装置を示す図The figure which shows the organic thin film formation apparatus by this invention 有機物の吸収スペクトルを示す図Diagram showing absorption spectrum of organic matter 本発明による有機薄膜の膜厚と反射率の関係を示す図The figure which shows the relationship between the film thickness of the organic thin film by this invention, and a reflectance 本発明による有機薄膜の時系列的な反射率を示す図The figure which shows the time-sequential reflectance of the organic thin film by this invention 有機物の吸収スペクトルを示す図Diagram showing absorption spectrum of organic matter 本発明を説明するための図Diagram for explaining the present invention 本発明を説明するための図Diagram for explaining the present invention 本発明を説明するための図Diagram for explaining the present invention 一般的な有機ＥＬの構成を示す図Diagram showing the structure of a general organic EL 有機物の励起と蛍光の関係を示す図Diagram showing the relationship between organic excitation and fluorescence 従来の膜厚測定による有機薄膜の膜厚と反射率の関係を示す図The figure which shows the relationship between the film thickness of organic thin film by conventional film thickness measurement, and reflectance

符号の説明Explanation of symbols

１．真空槽
２．基板
３．基板ホルダ
４．有機蒸発源
５．有機蒸発材料
６．マスク
７．シャッター
８．Ｙ分岐形状光ファイバ
９、１０．光ファイバ
１１．Ｙ分岐形状光ファイバ先端
１２．光源
１３．光検知器
１４．コンピュータ
１５．蒸着速度検出手段
１６．制御装置
１７．蒸気
３０．ガラス基板
３１．透明導電膜
３２．正孔輸送層
３３．発光層
３４．電子輸送層
３５．陰極金属
３６．缶
３７．ＥＬ光
1. Vacuum chamber 2. Substrate 3. Substrate holder 4. 4. Organic evaporation source 5. Organic evaporative material Mask 7. Shutter 8. Y-branch shaped optical fibers 9, 10. Optical fiber 11. 11. Y branch optical fiber tip Light source 13. Photodetector 14. Computer 15. Deposition rate detection means 16. Control device 17. Steam 30. Glass substrate 31. Transparent conductive film 32. Hole transport layer 33. Light emitting layer 34. Electron transport layer 35. Cathode metal 36. Can 37. EL light

Claims (7)

構造体に成膜される有機薄膜の膜厚を測定する膜厚測定装置であって、少なくとも成膜中に該有機薄膜に所定の波長の照射光を投光する手段、該照射光に対する該有機薄膜からの反射光強度又は透過光強度を検出する手段、及び該反射光強度又は該透過光強度に基づいて該有機薄膜の膜厚を特定する手段からなり、
該所定の波長が、該有機薄膜を構成する有機物の吸収スペクトルについて、吸光度のピーク値に対して２０％以下の吸光度を与える波長範囲に含まれることを特徴とする膜厚測定装置。 A film thickness measuring device for measuring a film thickness of an organic thin film formed on a structure, at least means for projecting irradiation light of a predetermined wavelength onto the organic thin film during film formation, the organic to the irradiation light Comprising: means for detecting reflected light intensity or transmitted light intensity from the thin film; and means for determining the film thickness of the organic thin film based on the reflected light intensity or transmitted light intensity;
The film thickness measuring apparatus characterized in that the predetermined wavelength is included in a wavelength range that gives an absorbance of 20% or less with respect to a peak value of absorbance of an absorption spectrum of an organic substance constituting the organic thin film. 請求項１記載の膜厚測定装置において、さらに、前記所定の波長が、前記吸光度のピーク値に対して１０％以下の吸光度を与える波長範囲に含まれることを特徴とする膜厚測定装置。   2. The film thickness measuring apparatus according to claim 1, wherein the predetermined wavelength is included in a wavelength range that gives an absorbance of 10% or less with respect to the peak value of the absorbance. 請求項１又は請求項２記載の膜厚測定装置において、前記構造体に複数の有機物の層からなる有機薄膜が形成され、
前記所定の波長が、該複数の有機物の吸収スペクトルについて、吸光度のピーク値に対して２０％以下の吸光度を与える波長範囲に含まれることを特徴とする膜厚測定装置。 In the film thickness measuring device according to claim 1 or 2, an organic thin film composed of a plurality of organic layers is formed on the structure,
The film thickness measuring apparatus, wherein the predetermined wavelength is included in a wavelength range that gives an absorbance of 20% or less with respect to an absorbance peak value in the absorption spectrum of the plurality of organic substances. 請求項３記載の膜厚測定装置において、さらに、前記所定の波長が、全ての該有機物の各吸収スペクトルについて、吸光度のピーク値に対して１０％以下の吸光度を与える波長範囲に含まれることを特徴とする膜厚測定装置。   4. The film thickness measuring apparatus according to claim 3, wherein the predetermined wavelength is included in a wavelength range that gives an absorbance of 10% or less with respect to a peak value of absorbance for each absorption spectrum of all the organic substances. A film thickness measuring device. 有機薄膜形成装置であって、請求項１から請求項４いずれか一項に記載の膜厚測定装置、真空槽、該真空槽内部で有機物を蒸発させる１以上の蒸発源、及び該膜厚測定装置による測定結果に基づいて有機薄膜形成の終了タイミングを決定する制御手段からなる有機薄膜形成装置。   It is an organic thin film forming apparatus, Comprising: The film thickness measuring apparatus as described in any one of Claims 1-4, a vacuum chamber, 1 or more evaporation sources which evaporate organic substance inside this vacuum chamber, and this film thickness measurement An organic thin film forming apparatus comprising control means for determining an end timing of organic thin film formation based on a measurement result by the apparatus. 構造体に成膜される有機薄膜の膜厚を測定する膜厚測定方法であって、
投光手段によって成膜中に該構造体に所定の波長の照射光を投光するステップ、
受光手段によって該照射光に対する該構造体からの反射光強度又は透過光強度を検出するステップ、及び
該受光手段に接続されたコンピュータによって、該受光手段によって検出された反射光強度又は透過光強度、及び該コンピュータに予め記憶した反射光強度又は透過光強度と膜厚との関係の理論値に基づいて、該有機薄膜の膜厚を特定するステップ
からなり、該所定の波長が、該有機薄膜を構成する有機物の吸収スペクトルについて、吸光度のピーク値に対して２０％以下の吸光度を与える波長範囲に含まれるように選択されることを特徴とする膜厚測定方法。 A film thickness measuring method for measuring a film thickness of an organic thin film formed on a structure,
Projecting irradiation light of a predetermined wavelength onto the structure during film formation by light projecting means;
Detecting the reflected light intensity or transmitted light intensity from the structure with respect to the irradiation light by the light receiving means, and the reflected light intensity or transmitted light intensity detected by the light receiving means by a computer connected to the light receiving means; And the step of specifying the film thickness of the organic thin film based on the theoretical value of the relationship between the reflected light intensity or transmitted light intensity and the film thickness stored in advance in the computer, and the predetermined wavelength A method for measuring a film thickness, wherein an absorption spectrum of an organic substance to be constituted is selected so as to be included in a wavelength range that gives an absorbance of 20% or less with respect to a peak value of absorbance. 請求項６記載の膜厚測定方法において、さらに、前記所定の波長が、該吸光度のピーク値に対して１０％以下の吸光度を与える波長範囲に含まれるように選択されることを特徴とする膜厚測定方法。
7. The film thickness measuring method according to claim 6, wherein the predetermined wavelength is selected so as to be included in a wavelength range that gives an absorbance of 10% or less with respect to the peak value of the absorbance. Thickness measurement method.
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