CN104347638A - 非易失性存储装置 - Google Patents
非易失性存储装置 Download PDFInfo
- Publication number
- CN104347638A CN104347638A CN201410228255.3A CN201410228255A CN104347638A CN 104347638 A CN104347638 A CN 104347638A CN 201410228255 A CN201410228255 A CN 201410228255A CN 104347638 A CN104347638 A CN 104347638A
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- electrode
- nonvolatile memory
- memory devices
- multilayer electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 111
- 230000015654 memory Effects 0.000 claims abstract description 79
- 239000010410 layer Substances 0.000 claims description 167
- 230000004888 barrier function Effects 0.000 claims description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 229920005591 polysilicon Polymers 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 239000011229 interlayer Substances 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-157586 | 2013-07-30 | ||
JP2013157586A JP2015028990A (ja) | 2013-07-30 | 2013-07-30 | 不揮発性記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104347638A true CN104347638A (zh) | 2015-02-11 |
CN104347638B CN104347638B (zh) | 2017-06-20 |
Family
ID=52426882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410228255.3A Active CN104347638B (zh) | 2013-07-30 | 2014-05-27 | 非易失性存储装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9406814B2 (zh) |
JP (1) | JP2015028990A (zh) |
CN (1) | CN104347638B (zh) |
TW (1) | TWI576964B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106531740A (zh) * | 2015-09-10 | 2017-03-22 | 株式会社东芝 | 半导体存储装置 |
CN107180836A (zh) * | 2016-03-11 | 2017-09-19 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
CN108292660A (zh) * | 2015-12-15 | 2018-07-17 | 英特尔公司 | 具有减少的位线到漏极选择栅极短路的存储器装置和系统及相关联的方法 |
CN110880512A (zh) * | 2018-09-05 | 2020-03-13 | 东芝存储器株式会社 | 半导体存储器装置及半导体存储器装置的制造方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102233378B1 (ko) * | 2014-04-07 | 2021-03-29 | 삼성전자주식회사 | 이동 단말과 연결된 착용형 기기의 동작 방법 및 그 착용형 기기 |
US9768378B2 (en) * | 2014-08-25 | 2017-09-19 | Micron Technology, Inc. | Cross-point memory and methods for fabrication of same |
KR20170006579A (ko) * | 2015-07-08 | 2017-01-18 | 삼성전자주식회사 | 전자 장치 및 전자 장치에서의 아이콘 변경 방법 |
KR20170131121A (ko) * | 2016-05-20 | 2017-11-29 | 삼성전자주식회사 | 반도체 소자 |
KR102332346B1 (ko) | 2017-04-10 | 2021-12-01 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 및 그의 제조 방법 |
JP2020155714A (ja) * | 2019-03-22 | 2020-09-24 | キオクシア株式会社 | 半導体記憶装置 |
KR20210011638A (ko) * | 2019-07-23 | 2021-02-02 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그 제조 방법 |
JP2021150415A (ja) | 2020-03-18 | 2021-09-27 | キオクシア株式会社 | 半導体記憶装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1186343A (zh) * | 1996-12-24 | 1998-07-01 | 三菱电机株式会社 | 半导体装置及其制造方法 |
CN101647114A (zh) * | 2007-04-06 | 2010-02-10 | 株式会社东芝 | 半导体存储装置及其制造方法 |
US20100232224A1 (en) * | 2009-03-11 | 2010-09-16 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor storage device |
US20120069660A1 (en) * | 2010-09-21 | 2012-03-22 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5288936B2 (ja) | 2008-08-12 | 2013-09-11 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP5330027B2 (ja) | 2009-02-25 | 2013-10-30 | 株式会社東芝 | 不揮発性半導体記憶装置、及びその製造方法 |
JP5504053B2 (ja) * | 2010-05-27 | 2014-05-28 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2012069695A (ja) | 2010-09-22 | 2012-04-05 | Toshiba Corp | 半導体記憶装置 |
JP2012069205A (ja) | 2010-09-22 | 2012-04-05 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2012151169A (ja) | 2011-01-17 | 2012-08-09 | Toshiba Corp | 半導体記憶装置 |
JP2013062325A (ja) * | 2011-09-12 | 2013-04-04 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
US8901635B2 (en) * | 2011-09-12 | 2014-12-02 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method for manufacturing the same |
-
2013
- 2013-07-30 JP JP2013157586A patent/JP2015028990A/ja active Pending
-
2014
- 2014-03-10 US US14/202,470 patent/US9406814B2/en active Active
- 2014-05-22 TW TW103117962A patent/TWI576964B/zh active
- 2014-05-27 CN CN201410228255.3A patent/CN104347638B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1186343A (zh) * | 1996-12-24 | 1998-07-01 | 三菱电机株式会社 | 半导体装置及其制造方法 |
CN101647114A (zh) * | 2007-04-06 | 2010-02-10 | 株式会社东芝 | 半导体存储装置及其制造方法 |
US20100232224A1 (en) * | 2009-03-11 | 2010-09-16 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor storage device |
US20120069660A1 (en) * | 2010-09-21 | 2012-03-22 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106531740A (zh) * | 2015-09-10 | 2017-03-22 | 株式会社东芝 | 半导体存储装置 |
CN106531740B (zh) * | 2015-09-10 | 2019-11-12 | 东芝存储器株式会社 | 半导体存储装置 |
CN108292660A (zh) * | 2015-12-15 | 2018-07-17 | 英特尔公司 | 具有减少的位线到漏极选择栅极短路的存储器装置和系统及相关联的方法 |
CN108292660B (zh) * | 2015-12-15 | 2023-12-26 | 英特尔公司 | 具有减少的位线到漏极选择栅极短路的存储器装置和系统及相关联的方法 |
CN107180836A (zh) * | 2016-03-11 | 2017-09-19 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
CN107180836B (zh) * | 2016-03-11 | 2020-11-10 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
CN110880512A (zh) * | 2018-09-05 | 2020-03-13 | 东芝存储器株式会社 | 半导体存储器装置及半导体存储器装置的制造方法 |
CN110880512B (zh) * | 2018-09-05 | 2023-10-10 | 铠侠股份有限公司 | 半导体存储器装置及半导体存储器装置的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20150035041A1 (en) | 2015-02-05 |
JP2015028990A (ja) | 2015-02-12 |
TW201511185A (zh) | 2015-03-16 |
CN104347638B (zh) | 2017-06-20 |
US9406814B2 (en) | 2016-08-02 |
TWI576964B (zh) | 2017-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170727 Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Toshiba Corp. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211011 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |