CN106531740A - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
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- CN106531740A CN106531740A CN201610643505.9A CN201610643505A CN106531740A CN 106531740 A CN106531740 A CN 106531740A CN 201610643505 A CN201610643505 A CN 201610643505A CN 106531740 A CN106531740 A CN 106531740A
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562216882P | 2015-09-10 | 2015-09-10 | |
US62/216,882 | 2015-09-10 | ||
US15/069,432 | 2016-03-14 | ||
US15/069,432 US9741736B2 (en) | 2011-05-20 | 2016-03-14 | Semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106531740A true CN106531740A (zh) | 2017-03-22 |
CN106531740B CN106531740B (zh) | 2019-11-12 |
Family
ID=58237115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610643505.9A Active CN106531740B (zh) | 2015-09-10 | 2016-08-08 | 半导体存储装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9741736B2 (zh) |
CN (1) | CN106531740B (zh) |
TW (1) | TWI642161B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110277400A (zh) * | 2018-03-13 | 2019-09-24 | 东芝存储器株式会社 | 半导体装置 |
CN110890379A (zh) * | 2018-09-10 | 2020-03-17 | 东芝存储器株式会社 | 半导体装置及其制造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021089905A (ja) * | 2018-03-20 | 2021-06-10 | キオクシア株式会社 | 半導体記憶装置 |
JP2019169503A (ja) * | 2018-03-22 | 2019-10-03 | 東芝メモリ株式会社 | 半導体記憶装置 |
JP2019220534A (ja) * | 2018-06-18 | 2019-12-26 | キオクシア株式会社 | 半導体記憶装置およびその製造方法 |
KR102585085B1 (ko) | 2019-03-01 | 2023-10-04 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 비트 라인 수가 증가된 아키텍처를 가진 3차원 메모리 소자 |
CN113544850A (zh) | 2019-03-19 | 2021-10-22 | 铠侠股份有限公司 | 半导体存储装置 |
JP2023044424A (ja) * | 2021-09-17 | 2023-03-30 | キオクシア株式会社 | 半導体記憶装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110303958A1 (en) * | 2010-06-09 | 2011-12-15 | Kouji Matsuo | Nonvolatile semiconductor memory |
US20120211821A1 (en) * | 2011-02-23 | 2012-08-23 | Kabushiki Kaisha Toshiba | Semiconductor memory device, method for manufacturing same, and method for manufacturing integrated circuit device |
CN103441127A (zh) * | 2007-04-06 | 2013-12-11 | 株式会社东芝 | 半导体存储装置及其制造方法 |
CN104347638A (zh) * | 2013-07-30 | 2015-02-11 | 株式会社东芝 | 非易失性存储装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010080685A (ja) | 2008-09-26 | 2010-04-08 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
KR102108879B1 (ko) * | 2013-03-14 | 2020-05-11 | 삼성전자주식회사 | 수직형 메모리 장치 및 그 제조 방법 |
JP2015149413A (ja) * | 2014-02-06 | 2015-08-20 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
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2016
- 2016-03-14 US US15/069,432 patent/US9741736B2/en active Active
- 2016-07-21 TW TW105123092A patent/TWI642161B/zh active
- 2016-08-08 CN CN201610643505.9A patent/CN106531740B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103441127A (zh) * | 2007-04-06 | 2013-12-11 | 株式会社东芝 | 半导体存储装置及其制造方法 |
US20110303958A1 (en) * | 2010-06-09 | 2011-12-15 | Kouji Matsuo | Nonvolatile semiconductor memory |
US20120211821A1 (en) * | 2011-02-23 | 2012-08-23 | Kabushiki Kaisha Toshiba | Semiconductor memory device, method for manufacturing same, and method for manufacturing integrated circuit device |
CN104347638A (zh) * | 2013-07-30 | 2015-02-11 | 株式会社东芝 | 非易失性存储装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110277400A (zh) * | 2018-03-13 | 2019-09-24 | 东芝存储器株式会社 | 半导体装置 |
CN110277400B (zh) * | 2018-03-13 | 2023-10-13 | 铠侠股份有限公司 | 半导体装置 |
CN110890379A (zh) * | 2018-09-10 | 2020-03-17 | 东芝存储器株式会社 | 半导体装置及其制造方法 |
CN110890379B (zh) * | 2018-09-10 | 2023-05-02 | 铠侠股份有限公司 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN106531740B (zh) | 2019-11-12 |
US9741736B2 (en) | 2017-08-22 |
US20170077025A1 (en) | 2017-03-16 |
TW201721827A (zh) | 2017-06-16 |
TWI642161B (zh) | 2018-11-21 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170808 Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Applicant before: Toshiba Corp. |
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TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220207 Address after: Tokyo Patentee after: Pangea Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
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TR01 | Transfer of patent right |