CN104334674B - 包含氧化锆颗粒的cmp组合物及使用方法 - Google Patents

包含氧化锆颗粒的cmp组合物及使用方法 Download PDF

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Publication number
CN104334674B
CN104334674B CN201380026721.3A CN201380026721A CN104334674B CN 104334674 B CN104334674 B CN 104334674B CN 201380026721 A CN201380026721 A CN 201380026721A CN 104334674 B CN104334674 B CN 104334674B
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cmp composition
weight
composition
acid
zirconia particles
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Chinese (zh)
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CN104334674A (zh
Inventor
W.金
J.帕克
E.雷姆森
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201380026721.3A 2012-05-22 2013-05-21 包含氧化锆颗粒的cmp组合物及使用方法 Active CN104334674B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/477,535 US8778212B2 (en) 2012-05-22 2012-05-22 CMP composition containing zirconia particles and method of use
US13/477,535 2012-05-22
PCT/US2013/041947 WO2013177110A1 (en) 2012-05-22 2013-05-21 Cmp composition containing zirconia particles and method of use

Publications (2)

Publication Number Publication Date
CN104334674A CN104334674A (zh) 2015-02-04
CN104334674B true CN104334674B (zh) 2016-08-17

Family

ID=49620778

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380026721.3A Active CN104334674B (zh) 2012-05-22 2013-05-21 包含氧化锆颗粒的cmp组合物及使用方法

Country Status (7)

Country Link
US (1) US8778212B2 (OSRAM)
EP (1) EP2852650B1 (OSRAM)
JP (1) JP6215919B2 (OSRAM)
KR (1) KR102135224B1 (OSRAM)
CN (1) CN104334674B (OSRAM)
TW (1) TWI484008B (OSRAM)
WO (1) WO2013177110A1 (OSRAM)

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JP2017005050A (ja) * 2015-06-08 2017-01-05 信越化学工業株式会社 研磨組成物及びその製造方法並びに研磨方法
US20170066944A1 (en) * 2015-09-03 2017-03-09 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate
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CN106928859A (zh) * 2015-12-31 2017-07-07 安集微电子科技(上海)有限公司 一种化学机械抛光液及其应用
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US10711158B2 (en) 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10584265B2 (en) 2017-09-28 2020-03-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them
US11186748B2 (en) 2017-09-28 2021-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them
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KR102024758B1 (ko) 2018-05-26 2019-09-25 에스케이이노베이션 주식회사 식각액 조성물, 절연막의 식각방법, 반도체 소자의 제조방법 및 실란화합물
KR102258307B1 (ko) * 2018-09-03 2021-06-01 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물 및 이를 이용한 방법
US10982144B2 (en) * 2018-09-03 2021-04-20 Enf Technology Co., Ltd. Silicon nitride layer etching composition and etching method using the same
US20210269674A1 (en) 2020-02-28 2021-09-02 Fujimi Corporation Polishing composition containing zirconia particles and an oxidizer
KR102623640B1 (ko) * 2020-07-22 2024-01-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
JP7739305B2 (ja) * 2020-09-04 2025-09-16 花王株式会社 基板の洗浄方法
KR102410845B1 (ko) * 2021-01-08 2022-06-22 에스케이씨솔믹스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
KR102638622B1 (ko) * 2021-07-22 2024-02-19 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법
KR20230141967A (ko) * 2022-03-29 2023-10-10 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 연마 방법 및 반도체 기판의 제조 방법
KR20230172348A (ko) * 2022-06-15 2023-12-22 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
TWI873734B (zh) * 2022-07-29 2025-02-21 美商聖高拜陶器塑膠公司 用於進行材料移除操作之組成物及方法
CN120418367A (zh) * 2022-12-12 2025-08-01 圣戈本陶瓷及塑料股份有限公司 用于进行材料移除操作的组合物和方法

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Also Published As

Publication number Publication date
JP6215919B2 (ja) 2017-10-18
US8778212B2 (en) 2014-07-15
KR102135224B1 (ko) 2020-07-17
EP2852650A1 (en) 2015-04-01
TW201406888A (zh) 2014-02-16
TWI484008B (zh) 2015-05-11
JP2015522669A (ja) 2015-08-06
WO2013177110A1 (en) 2013-11-28
KR20150014974A (ko) 2015-02-09
CN104334674A (zh) 2015-02-04
EP2852650B1 (en) 2020-07-29
EP2852650A4 (en) 2016-02-24
US20130313225A1 (en) 2013-11-28

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