JP2017525796A5 - - Google Patents

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Publication number
JP2017525796A5
JP2017525796A5 JP2016575222A JP2016575222A JP2017525796A5 JP 2017525796 A5 JP2017525796 A5 JP 2017525796A5 JP 2016575222 A JP2016575222 A JP 2016575222A JP 2016575222 A JP2016575222 A JP 2016575222A JP 2017525796 A5 JP2017525796 A5 JP 2017525796A5
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Japan
Prior art keywords
colloidal silica
polishing
copper
composition
particles
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JP2016575222A
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English (en)
Japanese (ja)
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JP6612790B2 (ja
JP2017525796A (ja
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Priority claimed from PCT/US2015/037772 external-priority patent/WO2015200684A1/en
Publication of JP2017525796A publication Critical patent/JP2017525796A/ja
Publication of JP2017525796A5 publication Critical patent/JP2017525796A5/ja
Priority to JP2019148753A priority Critical patent/JP6928040B2/ja
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Publication of JP6612790B2 publication Critical patent/JP6612790B2/ja
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JP2016575222A 2014-06-25 2015-06-25 銅バリアの化学機械研磨組成物 Active JP6612790B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019148753A JP6928040B2 (ja) 2014-06-25 2019-08-14 銅バリアの化学機械研磨組成物

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462017073P 2014-06-25 2014-06-25
US201462017100P 2014-06-25 2014-06-25
US62/017,100 2014-06-25
US62/017,073 2014-06-25
PCT/US2015/037772 WO2015200684A1 (en) 2014-06-25 2015-06-25 Copper barrier chemical-mechanical polishing composition

Related Child Applications (1)

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JP2019148753A Division JP6928040B2 (ja) 2014-06-25 2019-08-14 銅バリアの化学機械研磨組成物

Publications (3)

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JP2017525796A JP2017525796A (ja) 2017-09-07
JP2017525796A5 true JP2017525796A5 (OSRAM) 2018-07-12
JP6612790B2 JP6612790B2 (ja) 2019-11-27

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JP2016575222A Active JP6612790B2 (ja) 2014-06-25 2015-06-25 銅バリアの化学機械研磨組成物
JP2019148753A Active JP6928040B2 (ja) 2014-06-25 2019-08-14 銅バリアの化学機械研磨組成物

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JP2019148753A Active JP6928040B2 (ja) 2014-06-25 2019-08-14 銅バリアの化学機械研磨組成物

Country Status (8)

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US (1) US9556363B2 (OSRAM)
EP (1) EP3161095B8 (OSRAM)
JP (2) JP6612790B2 (OSRAM)
KR (1) KR102444548B1 (OSRAM)
CN (1) CN106661431B (OSRAM)
SG (1) SG11201610332PA (OSRAM)
TW (1) TWI564380B (OSRAM)
WO (1) WO2015200684A1 (OSRAM)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101232442B1 (ko) * 2007-09-21 2013-02-12 캐보트 마이크로일렉트로닉스 코포레이션 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US9771496B2 (en) * 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
JP6930976B2 (ja) * 2016-01-06 2021-09-01 シーエムシー マテリアルズ,インコーポレイティド 低k基板の研磨方法
US10421890B2 (en) * 2016-03-31 2019-09-24 Versum Materials Us, Llc Composite particles, method of refining and use thereof
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
US11111412B2 (en) * 2016-07-15 2021-09-07 Fujimi Incorporated Polishing composition, method for producing polishing composition, and polishing method
JP6881585B2 (ja) * 2017-08-09 2021-06-02 昭和電工マテリアルズ株式会社 研磨液及び研磨方法
US10508221B2 (en) * 2017-09-28 2019-12-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten
KR102576499B1 (ko) * 2018-09-06 2023-09-07 동우 화인켐 주식회사 Cmp용 실리카 입자 및 이의 제조방법
WO2020091242A1 (ko) * 2018-10-31 2020-05-07 영창케미칼 주식회사 구리 배리어층 연마용 슬러리 조성물
US10968366B2 (en) 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
US12227673B2 (en) 2018-12-04 2025-02-18 Cmc Materials Llc Composition and method for silicon nitride CMP
US10988635B2 (en) 2018-12-04 2021-04-27 Cmc Materials, Inc. Composition and method for copper barrier CMP
JP7065763B2 (ja) * 2018-12-27 2022-05-12 富士フイルム株式会社 薬液、被処理物の処理方法
GB201904918D0 (en) * 2019-04-08 2019-05-22 Givaudan Sa Improvements in or relating to organic compounds
KR102815121B1 (ko) * 2019-07-05 2025-06-04 후지필름 가부시키가이샤 조성물, 키트, 기판의 처리 방법
KR102525287B1 (ko) * 2019-10-18 2023-04-24 삼성에스디아이 주식회사 구리 막 연마용 cmp 슬러리 조성물 및 이를 이용한 구리 막 연마 방법
KR102570805B1 (ko) * 2019-11-01 2023-08-24 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법
KR102367056B1 (ko) * 2020-02-27 2022-02-25 주식회사 케이씨텍 화학적 기계적 연마용 슬러리 조성물
US11384254B2 (en) * 2020-04-15 2022-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition containing composite silica particles, method of making the silica composite particles and method of polishing a substrate
KR102623640B1 (ko) * 2020-07-22 2024-01-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
TWI877406B (zh) * 2020-09-25 2025-03-21 日商福吉米股份有限公司 化學機械研磨漿料、化學機械研磨組合物、用於研磨表面的方法、及緩衝金屬氧化物鹽的方法
CN113249175B (zh) * 2021-04-27 2023-03-24 上海新阳半导体材料股份有限公司 一种化学机械抛光后清洗液的应用
KR20220149148A (ko) 2021-04-30 2022-11-08 에스케이씨솔믹스 주식회사 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법
KR102773634B1 (ko) * 2022-04-13 2025-02-25 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자의 연마방법
KR20230172348A (ko) * 2022-06-15 2023-12-22 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
CN115093795B (zh) * 2022-07-04 2023-09-01 深圳市永霖科技有限公司 一种面向半导体晶圆超精密抛光的磁流变抛光液
CN120882832A (zh) * 2023-03-15 2025-10-31 弗萨姆材料美国有限责任公司 用于化学机械平面化的软聚硅氧烷核-壳磨料

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
WO1998004646A1 (en) 1996-07-25 1998-02-05 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6582623B1 (en) * 1999-07-07 2003-06-24 Cabot Microelectronics Corporation CMP composition containing silane modified abrasive particles
US7077880B2 (en) 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US6776810B1 (en) 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US7022255B2 (en) * 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
JP5127452B2 (ja) * 2005-08-10 2013-01-23 日揮触媒化成株式会社 異形シリカゾルの製造方法
TWI385226B (zh) * 2005-09-08 2013-02-11 羅門哈斯電子材料Cmp控股公司 用於移除聚合物阻障之研磨漿液
US8106229B2 (en) 2006-05-30 2012-01-31 Nalco Company Organically modifid silica and use thereof
TW200817497A (en) * 2006-08-14 2008-04-16 Nippon Chemical Ind Polishing composition for semiconductor wafer, production method thereof, and polishing method
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
JP5275595B2 (ja) * 2007-08-29 2013-08-28 日本化学工業株式会社 半導体ウエハ研磨用組成物および研磨方法
CN101802125B (zh) 2007-09-21 2013-11-06 卡伯特微电子公司 使用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法
KR101232442B1 (ko) * 2007-09-21 2013-02-12 캐보트 마이크로일렉트로닉스 코포레이션 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법
JP5428205B2 (ja) * 2008-06-04 2014-02-26 日立化成株式会社 金属用研磨液
JP5314329B2 (ja) * 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
KR101247890B1 (ko) * 2008-09-19 2013-03-26 캐보트 마이크로일렉트로닉스 코포레이션 저-k 유전체를 위한 장벽 슬러리
CN102164853B (zh) 2008-09-26 2014-12-31 扶桑化学工业株式会社 含有具有弯曲结构和/或分支结构的二氧化硅二次颗粒的胶体二氧化硅及其制造方法
JP2011216582A (ja) 2010-03-31 2011-10-27 Fujifilm Corp 研磨方法、および研磨液
US20110318928A1 (en) * 2010-06-24 2011-12-29 Jinru Bian Polymeric Barrier Removal Polishing Slurry
KR101243331B1 (ko) 2010-12-17 2013-03-13 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법
US8980122B2 (en) * 2011-07-08 2015-03-17 General Engineering & Research, L.L.C. Contact release capsule useful for chemical mechanical planarization slurry
KR101349758B1 (ko) 2011-12-26 2014-01-10 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법
JP5972660B2 (ja) 2012-03-28 2016-08-17 株式会社アドマテックス コロイドシリカの製造方法及びcmp用スラリーの製造方法

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