CN104241305B - 光电转换设备以及光电转换设备的制造方法 - Google Patents
光电转换设备以及光电转换设备的制造方法 Download PDFInfo
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- CN104241305B CN104241305B CN201410263602.6A CN201410263602A CN104241305B CN 104241305 B CN104241305 B CN 104241305B CN 201410263602 A CN201410263602 A CN 201410263602A CN 104241305 B CN104241305 B CN 104241305B
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 114
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 254
- 239000012535 impurity Substances 0.000 claims description 137
- 239000000758 substrate Substances 0.000 claims description 111
- 230000005540 biological transmission Effects 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims 4
- 239000007924 injection Substances 0.000 claims 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000009825 accumulation Methods 0.000 description 233
- 238000005468 ion implantation Methods 0.000 description 87
- 238000009826 distribution Methods 0.000 description 18
- 150000002500 ions Chemical class 0.000 description 17
- 229910052796 boron Inorganic materials 0.000 description 8
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- 229920002120 photoresistant polymer Polymers 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/148—Shapes of potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8027—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013124592A JP5932720B2 (ja) | 2013-06-13 | 2013-06-13 | 光電変換装置、および、光電変換装置の製造方法。 |
| JP2013-124592 | 2013-06-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104241305A CN104241305A (zh) | 2014-12-24 |
| CN104241305B true CN104241305B (zh) | 2017-04-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410263602.6A Active CN104241305B (zh) | 2013-06-13 | 2014-06-13 | 光电转换设备以及光电转换设备的制造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9437764B2 (enExample) |
| JP (1) | JP5932720B2 (enExample) |
| CN (1) | CN104241305B (enExample) |
| DE (1) | DE102014211226B4 (enExample) |
| GB (1) | GB2518261B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6706481B2 (ja) | 2015-11-05 | 2020-06-10 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子 |
| JP6946379B2 (ja) * | 2016-12-28 | 2021-10-06 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
| JP6840555B2 (ja) * | 2017-01-30 | 2021-03-10 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
| CN108198829A (zh) * | 2018-01-29 | 2018-06-22 | 德淮半导体有限公司 | Cmos图像传感器及其形成方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621067A (zh) * | 2008-07-02 | 2010-01-06 | 索尼株式会社 | 固体摄像器件及其制造方法和电子装置 |
| CN101853867A (zh) * | 2009-03-31 | 2010-10-06 | 索尼公司 | 固态成像装置及其制造方法和电子设备 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000012828A (ja) | 1998-06-24 | 2000-01-14 | Sony Corp | Ｃｃｄ固体撮像素子の製造方法 |
| JP2000031451A (ja) * | 1998-07-13 | 2000-01-28 | Toshiba Corp | 固体撮像装置およびその製造方法 |
| JP3621273B2 (ja) * | 1998-09-09 | 2005-02-16 | 松下電器産業株式会社 | 固体撮像装置およびその製造方法 |
| JP2000150857A (ja) | 1998-11-18 | 2000-05-30 | Nec Corp | 固体撮像装置及びその製造方法 |
| JP2002164529A (ja) | 2000-11-28 | 2002-06-07 | Sony Corp | 固体撮像素子およびその製造方法 |
| JP2005167187A (ja) | 2003-11-13 | 2005-06-23 | Seiko Epson Corp | 固体撮像装置及びその製造方法 |
| KR20080016259A (ko) * | 2006-08-18 | 2008-02-21 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
| JP2011108824A (ja) | 2009-11-17 | 2011-06-02 | Panasonic Corp | 固体撮像素子 |
| JP2011146747A (ja) | 2011-04-28 | 2011-07-28 | Sony Corp | 固体撮像装置の製造方法および半導体装置の製造方法 |
| US9570489B2 (en) * | 2011-07-12 | 2017-02-14 | Sony Corporation | Solid state imaging device having impurity concentration on light receiving surface being greater or equal to that on opposing surface |
| JP2013051327A (ja) * | 2011-08-31 | 2013-03-14 | Sony Corp | 固体撮像素子および電子機器 |
| JP2014165286A (ja) * | 2013-02-23 | 2014-09-08 | Nikon Corp | フォトダイオード、固体撮像素子及び撮像装置 |
-
2013
- 2013-06-13 JP JP2013124592A patent/JP5932720B2/ja active Active
-
2014
- 2014-06-09 US US14/300,028 patent/US9437764B2/en active Active
- 2014-06-12 DE DE102014211226.5A patent/DE102014211226B4/de active Active
- 2014-06-13 CN CN201410263602.6A patent/CN104241305B/zh active Active
- 2014-06-13 GB GB1410584.5A patent/GB2518261B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621067A (zh) * | 2008-07-02 | 2010-01-06 | 索尼株式会社 | 固体摄像器件及其制造方法和电子装置 |
| CN101853867A (zh) * | 2009-03-31 | 2010-10-06 | 索尼公司 | 固态成像装置及其制造方法和电子设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102014211226A1 (de) | 2014-12-18 |
| GB2518261B (en) | 2016-06-29 |
| US9437764B2 (en) | 2016-09-06 |
| JP2015002192A (ja) | 2015-01-05 |
| CN104241305A (zh) | 2014-12-24 |
| US20140367747A1 (en) | 2014-12-18 |
| GB2518261A (en) | 2015-03-18 |
| GB201410584D0 (en) | 2014-07-30 |
| JP5932720B2 (ja) | 2016-06-08 |
| DE102014211226B4 (de) | 2017-11-30 |
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