CN1041481A - 可控功率半导体元件 - Google Patents

可控功率半导体元件 Download PDF

Info

Publication number
CN1041481A
CN1041481A CN89107499A CN89107499A CN1041481A CN 1041481 A CN1041481 A CN 1041481A CN 89107499 A CN89107499 A CN 89107499A CN 89107499 A CN89107499 A CN 89107499A CN 1041481 A CN1041481 A CN 1041481A
Authority
CN
China
Prior art keywords
type base
base layer
layer
centimetre
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN89107499A
Other languages
English (en)
Inventor
弗里德赫尔姆·包尔
霍斯特·格伦宁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Schweiz Holding AG
ABB AB
Original Assignee
Asea Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri AG Switzerland filed Critical Asea Brown Boveri AG Switzerland
Publication of CN1041481A publication Critical patent/CN1041481A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/1016—Anode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thyristors (AREA)

Abstract

在一具有顺次为p型发射极层(9)，n型基极层(8)、p型基极层(7)和n型发射极层(5)的pnpn层结构的可控功率半导体元件中，在截止期间上升的关键的增强电场由于中间层(11)的缘故而减小，中间层(11)n型掺杂浓度比n型基极层(8)的掺杂浓度高，并且它是插在n型基极层(8)与p型基极层(7)之间。

Description

本发明涉及功率电子学领域，更具体地说涉及这样一种可控功率半导体元件，它包括：
（1）一阳极、一阴极和一栅极;
（2）在阳极与阴极之间依次有p型发射极层、n型基极层，p型基极层和n型发射极层;以及
（3）在阴极一侧的一栅-阴极结构。
例如从由V.A.K.Temple所写的一篇文章（美国电气及电子工程师学会电子器件学报，ED-33卷1986年第10期，第1609-1618页）这种类型的元件称为MOS-可控闸流晶体管（MCT），或者，例如从EP-A2-0241662中被称为栅控截止闸流晶体管（GTO）。
目前现代功率电子学要求可由简单的手段控制达到最高功率范围的快速半导体元件。对于低功率范围和中等的功率来说，迄今已经证明，功率MOSFET（金属氧化物半导体场效应晶体管）由于其在控制电极的大输入阻抗因而是特别适用的。
但是，正如已知那样，较高的可转换的功率只能用双极结构（双极结晶体管，闸流晶体管）来实现。尽管如此，在限于简单，特别是低功率的控制场合，如用功率MOSFET来控制，被认为是理想的做法。
双极和MOS结构的有建设性的结合方面首先是以IGBT（绝缘栅极双极晶体管）的形式结合起来的。如预期那样，这样结合的结果是一种1千伏级的元件与相应的功率MOSFET相比具有显著地较小的正向电阻。
另一方面，对于IGBT来说，如所有双极元件所共有的元件高电阻区域的固有溢流是令人注意的，因此它们必然不能达到相应的单极元件所有的高转换速度。
现在，最高功率的可控半导体元件是GTO（栅控截止）闸流晶体管。原则上，整个芯片表面也被分成多个并联连接的基本单元。这些元件可以通过栅极接点来接通和断开。但是，这种安排，对栅极控制必须考虑电路的巨大花费。
一种可以补求的办法是MOS技术：可以规定这种MCTS（MOS-可控闸流晶体管）的各种各样的结构，它们都具有可通过MOS栅极转换的阴极侧的短路。
实验已经显示，这一原理允许将大于1000安/平方厘米的电流密度截止。这些MCT（MOS-可控闸流晶体管）的阴极结构与功率MOSFET和GIBT的阴极结构类似。因此，基本单元也具有差不多的尺寸（一般值为20-30μm），如要实现较大的元件（如在一4吋圆片上），便会随着产量而使问题急剧增加。尽管如此，MCT是目前最有可能成为将来的功率半导体元件的候选者之一。
目前，通常是通过在外部连接到无源元件来消除闸流晶体管在动态工作期间所固有的不稳定性。这种连接将阳极电压上升率（dv/dt）限制要安全截止所具有的值。
在GTO型的闸流晶体管的情况下，会在截止期间产生特别严重的非均匀电流密度分布（细长形分布）。此时，电流基本上集中在一个阴极单元上，并由于热过载的结果，导致闸流晶体管的迅速的毁坏。因此必须考虑这一效果，对元件进行特殊设计，以及采用适当的保护电路。
一般说来，在形成细长状的物理系统中必须满足二个必要条件：首先该系统必须具有正反馈。在闸流晶体管的情况下，这是通过pnpn结构自动提供的。第二个必要条件是一个或一个以上物理量的波动的存在。
在本文已知和已叙述过的是在通常的GTO的较宽的控制部分下的电流集中，这是由p-基极的有限的分路电导产生的。这种触发机构在诸如MCT那样结构精细的元件中是不会出现的。
但是，由此不能作出这样的推论，即MCT不是细长地截止。根据已知的电流状态，认为在MCT中“动态雪崩”现象在截止期间是一细长状的触发脉冲（例如参阅M.Stoisiek等人的文章，美国电气及电子工程师学会国际电子器件会议技术汇编（1987），666-669页）。
在截止期间，诸如MCT那样的结构精细的元件在仍有很大电流从P型基极层流至n型基极层，同时在p-n结已建立空间电荷区那样的时间段情况下进行。由于电场的迅速产生，此时空穴从还是充溢着的n型基极以饱和漂移速度通过空间电荷区至阴极。
仅仅取决于外部电流的这些空穴的密度大大地影响了空间电荷区上的场强分布。由于其正电荷，空穴有效地提高了n型基极层的掺杂程度，这在表现为从p型基极层至n型基极层的p-n结处的电场上升。根据外部电流量，这个量能够变成这样大使得超过在静态条件下有效的击穿场强。“动态雪崩”即是指这种增强的电场通过自由空穴上升以及指过早的击穿。
由漂移的空穴产生的电场增强只是在n型基极衬底的掺杂大致等于或甚至小于空穴浓度的情况下才是显著的。因此，在漂移饱和的情况下，接近100安/厘米2的电流密度是由6×1013/厘米3的空穴密度携带的，该值的确达到了对闸流晶体管来说是典型的1×1013/厘米3至1×1014/厘米3衬底掺杂度，并自动地导至在截止期间一个大的增强电场的上升。
因此，本发明的一个目的是提供一种新颖的可控功率半导体元件，在该元件中这种增强的电场的上升显著的减小。
本发明的这一目的在本文开头所描写的那种类型的元件中通过下列措施得到了实现。
（4）在n型基极层与p型基极层之间设置一个n-掺杂中间层;以及
（5）该中间层的掺杂浓度高于n型基极层。
根据本发明的第一个优选实施例，该元件具有MOS可控闸流晶体（MCT）的结构。
第二个优选实施例作了这样的规定，即n型基极层的掺杂浓度大致在1×1013/厘米3与1×1014/厘米3之间，且中间层的掺杂浓度大致在2×1014/厘米3与8×1014/厘米3之间。
根据本发明的另一个优选实施例，中间层的厚度在10微米与20微米之间。
根据本发明的其他一些典型的实施例，在n型基极层与P型发射极层之间有一个n型缓冲层，它的掺杂浓度比n型基极层的要高。
结合下之的附图，参阅下面的具体描述将会更好地理解本发明的许多优点，并对本发明有全面的了解。附图中：
图1示出了具有根据本发明的中间层的MCT的标准单元的横截面的一部分;
图2示出根据本发明的MCT的示范性的掺杂分布图C（X）;以及
图3A，3B示出一用各种方法计算的电场增强系数m与结电压VJ之间的相互关系。
下面以MCT为例说明本发明，但对普通的闸流晶体管这也可以同样的方式采用。
现参阅附图，附图中相同的参考标号表示相同或相应的部件。首先图1示出了一MCT的一典型的标准单元一部分的截面图。在具有相应阳极接点10的阳极A与具有相应阴极接点1的阴极K之间，设置了顺次由p+-掺杂的p型发射极层9、n-掺参的n型基极层8、p-掺杂的p型基极层7和n+-掺杂的n型发射层5所构成的一层。该n型基极层8和p型基极层7形成了一个p-n结13。
在一给定的区域，p型基极层7到达该半导体衬底的表面，并在那里与n-掺杂的沟道区6、p+-掺杂的源区4和由栅极绝缘层2与该衬底分离开的一盖在上面的栅电极3一起形成一MOS控制的短路：从上述V.A.Temple的文章可以了解这种安排的工作方式的具体情况。
根据本发明，本来已知的这种闸流晶体管的结构现在阴极一侧，在n型基极层8与p型基极层7之间增加了一层n-掺杂浓度比n型其极层高的中间层11。
这里中间层11的掺杂浓度的最高值最好约在2×1014/厘米3至8×1014/厘米3的范围内。
还有该中间层的厚度D最好在10至20微米的范围内。
而且在n型基极层8与p型发射极层9之间插入一个有较高n-掺杂的缓冲层12是较有利的。
图2以对数标度示出沿图1中的剖面线B-B的，作为所示深度X的函数的掺杂浓度C的典型分布。这里衬底掺杂度或n型基极层8的掺杂度是2×1013/厘米3。
在第一截止期间增强电场的上升由于有了本发明的中间层11的结果而急剧的减小。为了对上述作更充分地说明，首先在这里定义一类似于“品质因素”的量，这可根据增强电场的上升对所建议的结构进行评估。
为此目的，给出称为电场增强系数m的一个比值。这一无量纲的数是在有漂移空穴时的最高电场强度与在静态情况下（无电流流过p-n结）时的最高电场强度的比率。
上面定义的电场增强系数m现在视为下述结构的跨在p-n结13上的结电压VJ的一函数（图3A，3B），即具有图2所示掺杂材料分布图（中间层11的最高掺杂度为8×1014/厘米3）的结构，另一种没有示出但与图2有类似的掺杂材料分布图（中间层11的最高掺杂度为5×1014/厘米3），以及最后没有中间层的通常的结构（n型基极层的恒定掺杂度为2×1013/厘米3）。
图3A所示的曲线A、B和C（这里假定空穴电流密度为100安/厘米）是根据一维器件模拟程序COMPASS模拟得出的，对于通常的结构（曲线A），得出电场增强系数m的值约为2.2，它在第一近似中与所加的结电压无关。因此电场的相对提高是120%。
由于根据本发明插入中间层11的结果（曲线B和C，曲线B的最高掺杂度为5×1014/厘米3，曲线C的最高掺杂度为8×1014/厘米3），电场增强系数m可以限制为1.3（电压V＝200伏）至1.5（电压V＝1000伏）的值。图3示出了从分析观察得出的同样结构的比较曲线。
中间层的加入自然导致p-n结13的静态击穿电压的下降。通过仔细地确定掺杂度的大小和中间层的厚度（如在上述例子中已采取的那样）击穿电压的减小的容限是很理想的。
借助于上述数字模拟程序COMPASS的计算，可以知道，由于加入有较高掺杂度的中间层的结果，可获得的击穿电压低于具有单一掺杂的n型基极的闸流晶体管的理想击穿电压。就n型基极层的掺杂度为1×1014/厘米3，中间层的厚度D为15微米而论，对于中间层的各种最大掺杂度可得出例如下列的击穿电压（以无中间层击穿电压%来表示）
3×1014/厘米3：91.8%
5×1014/厘米3：83.9%
8×1014/厘米3：71.1%
n型基极层的掺杂度为2×10/厘米时类似的结果是：
3×1014/厘米3：97.4%
5×1014/厘米3：91.1%
8×1014/厘米3：82.3%
如果减少20%是允许的话，根据这里假定的中间层的厚度为15微米，可以实现最大的掺杂度为5×1014至8×1014/厘米3。最后，应该指出，由于元件的边缘终止，理想击穿电压一般减小10至30%自然已是不可避免的了，因此，由于n基极的掺杂的提高所造成的减小已不再是十分显著的。
本发明的基本目的是避免MCT中的因细长状结构而有的过早的动态击穿，由于和通常的闸流晶体管相比，这些元件的p型基极层很薄，这里通过一注入或扩散步骤（磷）接着再退火可特别简单地生成一所提出的中间层。
这一步骤在进行单各个掺杂以形成p型基极层、n型发射极层和源区域之前执行。为了在具有较厚的p型基极层的闸流晶体管中形成中间层，排除了采用简单的扩散技术。掺杂层的外延生长是另一种产生所需要层的方法。采用外延法，也能对通常的闸流晶体管应用本发明的原理。
显然，按照上述技术，对本发明可进行许多改进和变化。因此应该理解，本发明在所附的权利要求范围内实施而不是仅限于上述的具体说明。

Claims (5)

1、一种可控功率半导体元件，它包括：
(1)一阳极(A)，一阴极(K)和一栅极；
(2)在阳极(A)与阴极(K)之间的顺次由p型发射极层(9)、n型基极层(8)、p型基极层(7)和n型发射极层(5)组成的一层；以及
(3)在阴极(K)一侧的一栅横线阴极结构；
其特征在于：
(4)在n型基极层(8)与p型基极层(7)之间设置了一层n-掺杂的中间层(11)；并且
(5)中间层(11)的掺杂浓度(C)高于n型基极层的掺杂浓度。
2、如权利要求1所述的截止功率半导体元件，其特征在于该元件具有MOS可控闸流晶体管（MCT）的结构。
3、如权利要求1所述的截止功率半导体元件，其特征在于，n型基极层（8）的掺杂浓度（C）约在1×1013/厘米3与1×1014/厘米3之间，且中间层（11）的掺杂浓度约在2×1014/厘米3与8×1014/厘米3之间。
4、如权利要求3所述的截止功率半导体元件，其特征在于中间层（11）的厚度（D）在10μm与20μm之间。
5、如权利要求4所述的截止功率半导体元件，其特征在于，在n型基极层（8）与p型发射极层（9）之间设置有一n型缓冲层（12），与n型基极层（8）相比，它的掺杂浓度较高。
CN89107499A 1988-09-22 1989-09-22 可控功率半导体元件 Pending CN1041481A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3832208A DE3832208A1 (de) 1988-09-22 1988-09-22 Steuerbares leistungshalbleiterbauelement
DEP3832208.0 1988-09-22

Publications (1)

Publication Number Publication Date
CN1041481A true CN1041481A (zh) 1990-04-18

Family

ID=6363490

Family Applications (1)

Application Number Title Priority Date Filing Date
CN89107499A Pending CN1041481A (zh) 1988-09-22 1989-09-22 可控功率半导体元件

Country Status (6)

Country Link
US (1) US4967255A (zh)
EP (1) EP0359994A1 (zh)
JP (1) JPH02122671A (zh)
KR (1) KR900005623A (zh)
CN (1) CN1041481A (zh)
DE (1) DE3832208A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100454540C (zh) * 2005-12-19 2009-01-21 厦门大学 半导体开关器件

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2526653B2 (ja) * 1989-01-25 1996-08-21 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
DE4121375A1 (de) * 1991-06-28 1993-01-14 Asea Brown Boveri Abschaltbares leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung
DE4137840A1 (de) * 1991-11-16 1993-06-03 Asea Brown Boveri Halbleiterschalter zum sperren hoher spannungen
JP3119931B2 (ja) * 1992-03-31 2000-12-25 株式会社東芝 サイリスタ
US5296725A (en) * 1992-06-10 1994-03-22 North Carolina State University At Raleigh Integrated multicelled semiconductor switching device for high current applications
US5600160A (en) * 1993-04-14 1997-02-04 Hvistendahl; Douglas D. Multichannel field effect device
US6727527B1 (en) 1995-07-31 2004-04-27 Ixys Corporation Reverse blocking IGBT
US20040061170A1 (en) * 1995-07-31 2004-04-01 Ixys Corporation Reverse blocking IGBT
US5698454A (en) * 1995-07-31 1997-12-16 Ixys Corporation Method of making a reverse blocking IGBT
US6936908B2 (en) 2001-05-03 2005-08-30 Ixys Corporation Forward and reverse blocking devices
DE10238797B4 (de) * 2002-08-23 2007-09-20 Infineon Technologies Ag Kommutierfeste Diode und Verfahren zu ihrer Herstellung
CN105190895A (zh) * 2013-03-13 2015-12-23 Abb技术有限公司 功率半导体装置及相应模块

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE323452B (zh) * 1964-05-15 1970-05-04 Asea Ab
DE2915885C2 (de) * 1979-04-19 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor
DE3117202A1 (de) * 1981-04-30 1982-11-18 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum einstellen der lebensdauer der minoritaetsladungstraeger in halbleiterschaltern mit protonenstrahlen
EP0074133B1 (de) * 1981-08-25 1987-01-28 BBC Aktiengesellschaft Brown, Boveri & Cie. Thyristor
US4639761A (en) * 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
FR2565409B1 (fr) * 1984-05-30 1986-08-22 Silicium Semiconducteur Ssc Thyristor blocable a gachette d'anode
US4611235A (en) * 1984-06-04 1986-09-09 General Motors Corporation Thyristor with turn-off FET
CH668505A5 (de) * 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
DE3689680T2 (de) * 1985-09-30 1994-06-23 Toshiba Kawasaki Kk Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren.
DE3612367A1 (de) * 1986-04-12 1987-10-15 Licentia Gmbh Abschaltbarer thyristor
JP2604580B2 (ja) * 1986-10-01 1997-04-30 三菱電機株式会社 アノード短絡形ゲートターンオフサイリスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100454540C (zh) * 2005-12-19 2009-01-21 厦门大学 半导体开关器件

Also Published As

Publication number Publication date
EP0359994A1 (de) 1990-03-28
JPH02122671A (ja) 1990-05-10
KR900005623A (ko) 1990-04-14
US4967255A (en) 1990-10-30
DE3832208A1 (de) 1990-03-29

Similar Documents

Publication Publication Date Title
CN1040814C (zh) 一种用于半导体器件的表面耐压区
CN1041481A (zh) 可控功率半导体元件
CN1035294C (zh) 具有异形掺杂岛的半导体器件耐压层
DE102011085196A1 (de) Bipolartransistor mit isoliertem Gate und Herstellungsverfahren desselben
CN1181559C (zh) 一种半导体器件
EP0430237A1 (en) Bipolar device in which carrier lifetime is controlled
CN1166001C (zh) 碳化硅场控双极型开关
CN101047205A (zh) 一种注入效率可控的门极换流晶闸管iec－gct的设计方法
CN1619830A (zh) 半导体器件
CN1075668C (zh) 绝缘栅双极晶体管
CN1161830C (zh) 半导体元件及其制造方法
JP3488772B2 (ja) 半導体装置
CN87106746A (zh) 半导体元件
KR100902848B1 (ko) 고전압용 절연 게이트 양극성 트랜지스터 및 그 제조방법
CN1037237A (zh) 大功率闸门电路断开的可控硅及其制造方法
DE69937665T2 (de) Halbleiterbauelement mit isoliertem Gate und dessen Betriebsverfahren
CN1130809A (zh) 具有电子施主的半导体二极管
US5710445A (en) Gate turn-off thyristor for high blocking voltage and small component thickness
DE102020200060A1 (de) Halbleitervorrichtung
CN116525646B (zh) 一种igbt器件及开关电路
Trajkovic et al. Silicon MOS controlled bipolar power switching devices using trench technology
CN88102261A (zh) 门关断闸流晶体管及其制造方法
CN1158008A (zh) 异质结双极型晶体管
DE112017008011T5 (de) Halbleitervorrichtung
CN106876255A (zh) 碳化硅半导体器件及其制备方法

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C01 Deemed withdrawal of patent application (patent law 1993)
WD01 Invention patent application deemed withdrawn after publication