SE323452B - - Google Patents
Info
- Publication number
- SE323452B SE323452B SE5947/64A SE594764A SE323452B SE 323452 B SE323452 B SE 323452B SE 5947/64 A SE5947/64 A SE 5947/64A SE 594764 A SE594764 A SE 594764A SE 323452 B SE323452 B SE 323452B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/1016—Anode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE5947/64A SE323452B (zh) | 1964-05-15 | 1964-05-15 | |
GB20219/65A GB1096777A (en) | 1964-05-15 | 1965-05-13 | Improvements in rectifying semi-conductor bodies |
US455891A US3470036A (en) | 1964-05-15 | 1965-05-14 | Rectifying semi-conductor body |
DEA49213A DE1279203B (de) | 1964-05-15 | 1965-05-14 | Halbleiterkoerper fuer einen Thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE5947/64A SE323452B (zh) | 1964-05-15 | 1964-05-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE323452B true SE323452B (zh) | 1970-05-04 |
Family
ID=20267586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE5947/64A SE323452B (zh) | 1964-05-15 | 1964-05-15 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3470036A (zh) |
DE (1) | DE1279203B (zh) |
GB (1) | GB1096777A (zh) |
SE (1) | SE323452B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3593196A (en) * | 1969-02-19 | 1971-07-13 | Omni Spectra Inc | Type of avalanche diode |
DE7317598U (de) * | 1972-06-09 | 1974-04-04 | Bbc Ag | Halbleiterbauelement |
US3990091A (en) * | 1973-04-25 | 1976-11-02 | Westinghouse Electric Corporation | Low forward voltage drop thyristor |
DE7328984U (de) * | 1973-07-06 | 1975-05-15 | Bbc Ag Brown Boveri & Cie | Leistungshalbleiterbauelement |
JPS5128777A (en) * | 1974-09-04 | 1976-03-11 | Hitachi Ltd | Kisei pnpn sairisutanohatsuseioboshishita shusekikairosochi no seizohoho |
US4043837A (en) * | 1975-01-10 | 1977-08-23 | Westinghouse Electric Corporation | Low forward voltage drop thyristor |
DE2805055C2 (de) * | 1978-02-07 | 1983-06-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Optisch zündbarer Thyristor |
DE3832208A1 (de) * | 1988-09-22 | 1990-03-29 | Asea Brown Boveri | Steuerbares leistungshalbleiterbauelement |
DE102008049678B4 (de) * | 2008-09-30 | 2020-06-10 | Infineon Technologies Bipolar Gmbh & Co. Kg | Asymmetrisch sperrender Thyristor und Verfahren zur Herstellung eines asymmetrisch sperrenden Thyristors |
CN110521000A (zh) * | 2017-04-24 | 2019-11-29 | 力特半导体(无锡)有限公司 | 改进的场阻止晶闸管结构及其制造方法 |
CN111640780B (zh) * | 2020-04-13 | 2022-09-13 | 浙江明德微电子股份有限公司 | 一种半导体芯片、制备方法及应用电路 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1104071B (de) * | 1959-04-04 | 1961-04-06 | Siemens Ag | Vierschichten-Halbleiteranordnung mit einkristallinem Halbleiterkoerper und drei hintereinandergeschalteten pn-UEbergaengen mit abwechselnd entgegengesetzter Sperrichtung und Verfahren zu ihrer Herstellung |
FR1263548A (fr) * | 1959-07-14 | 1961-06-09 | Ericsson Telefon Ab L M | Dispositif semi-conducteur du type pnpn et son procédé de fabrication |
US2983854A (en) * | 1960-04-05 | 1961-05-09 | Bell Telephone Labor Inc | Semiconductive device |
US3200259A (en) * | 1961-08-01 | 1965-08-10 | Rca Corp | Solid state electrical devices utilizing phonon propagation |
US3284639A (en) * | 1963-02-19 | 1966-11-08 | Westinghouse Electric Corp | Semiconductor switch device of controlled rectifier type responsive to approximately equal gate signals of either polarity |
US3277352A (en) * | 1963-03-14 | 1966-10-04 | Itt | Four layer semiconductor device |
-
1964
- 1964-05-15 SE SE5947/64A patent/SE323452B/xx unknown
-
1965
- 1965-05-13 GB GB20219/65A patent/GB1096777A/en not_active Expired
- 1965-05-14 DE DEA49213A patent/DE1279203B/de active Pending
- 1965-05-14 US US455891A patent/US3470036A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB1096777A (en) | 1967-12-29 |
DE1279203B (de) | 1968-10-03 |
US3470036A (en) | 1969-09-30 |