CN87106746A - 半导体元件 - Google Patents

半导体元件 Download PDF

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CN87106746A
CN87106746A CN87106746.3A CN87106746A CN87106746A CN 87106746 A CN87106746 A CN 87106746A CN 87106746 A CN87106746 A CN 87106746A CN 87106746 A CN87106746 A CN 87106746A
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semiconductor substrate
thickness
anode
semiconductor element
etch pit
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C·克里斯蒂安·阿巴斯
延斯·戈布雷希特
霍斯特·格吕宁
扬·福博利尔
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BBC Brown Boveri AG Switzerland
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Abstract

对一种在半导体衬底中具有各种不同掺杂层(2，3，4，5)的半导体元件进行了电气性能方面的改进，方法是用深腐蚀坑(10)局部减少载流区衬底的厚度，同时基本上保持半导体衬底原有的机械稳定性。

Description

本发明是关于一种半导体元件，特别是关于一种大面积半导体衬底在对向配置的电极之间具有多个不同掺杂层的半导体元件。
半导体元件，无论是二极管、半导体开关元件或是金属氧化物半导体场效应晶体管或大电流晶体管，特别是大功率晶体管，占据日益扩大的能量发生和分配以及传动工程的领域。
同时，象欧洲专利EP-AI    0，121，068介绍的周知的控制门断开（GTO）型半导体开关元件和场控型半导体开关元件（FCTh）之类的关断式半导体开关元件开辟了新的应用领域。
目前，模拟计算结果表明，如果在相应的半导体衬底上加一个阻隔层并减少n型基区层的厚度，实质上可改善GTO和FCTh的导通电阻（即导通状态下的电阻）、关断时间和所谓“尾部”特性（即在“无缓冲器”关断时电流的衰减特性）。
但若果采用传统的技术，则不能将n型基层的厚度减少到能影响元件的电气性能的程度，这是因为大面积半导体衬底在其直径达到几英寸的情况下会在元件的制造过程中变得过于易碎以致难以可靠地加以处理。
甚至采用外延生长的所谓外延（EPI）层也不能解决问题，因为该EPI层还必须配备另外作为隆起的阴极指的厚度，而EPI层为达到此目的的100微米总厚度，不是制造不出质量合乎要求的产品，就是最起码是成本高，不经济。
因此本发明的目的是提供一种能发挥在减少厚度方面的优点而又不致危害半导体衬底的机械稳定性或必须借助于不经济的方法制造的半导体元件。
这个目的是通过引言中所述的那种半导体元件付诸实施的。在该半导体元件中，为改善元件的电气性能，至少在半导体衬底的一侧引入一定深度的腐蚀坑，以减少半导体衬底在载流区的厚度。因此本发明的实质是从半导体衬底一侧或两侧往半导体基片上引入一些腐蚀坑，从而以隆起物的形式继续保留原衬底在腐蚀坑周围的厚度，同时充分保留机械上的稳定性。
本发明最好应用到这样的半导体元件，其半导体衬底在阳极与阴极之间配备有GTO或FCTh层系、在阴极侧制成阶梯式的栅-阴结构，在这种栅-阴结构中，有多个阴极指突出更深一层配置的栅极平面并形成带有中介栅区控制结构。在此情况下，腐蚀坑系配置在控制结构对过的阳极侧。
其它最佳实施例有：
半导体衬底具有能通过栅极加以关断的（GTO型）半导体开关元件层系或场控制型半导体开关元件（FCTh）层系，该层系配置在阳极与阴极之间;
半导体衬底在阴极侧具有一栅-阴结构，该栅-阴结构按阶梯形式构成，在该结构中，多个阴极指从更深配置的栅极平面突出，形成具有中介栅区的控制结构;
腐蚀坑配置在控制结构对向的阳极侧;
P掺杂阳极层和其上的n型轻掺杂的n型基区层系配置在阴极侧的半导体衬底中，且减少腐蚀坑部位中半导体衬底的厚度实质上是靠消耗n型基区层（3）的厚度而取得的;
在阳极层与n型基区层之间设有n型强掺杂的阻隔层;
n型基区层在腐蚀坑部位的厚度小于200微米，最好是在80和150微米之间的范围内;
控制结构再划分为若干彼此分开的控制区，且在控制区对过配置有面积大致与控制区相等的腐蚀坑;
半导体衬底在阳极侧钎焊到金属基片上，且腐蚀坑完全充满钎料。
下面参照附图根据列举的实施例对本发明进行更详细的叙述和说明。附图中：
图1是可用现有技术带阶梯式栅-阴结构关断的（GTO或FCTh）型半导体开关元件的外形透视图;
图2是图1（在此特别是如GTO）的半导体开关元件沿图1中A-A线所示的平面的横向剖视图;
图3是对各种不同厚度的基区层的GTO型半导体开关元件在关断情况下的电流曲线进行模拟计算的结果;
图4是图2根据本发明列举的一个最佳实施例在阳极侧上带腐蚀坑的GTO型半导体开关元件的示意图;
图5A是具有多个平行阴极指因而可以关断的经过精细作出图形并钝化过的原型半导体开关元件阴极侧的平面图;
图5B是图5A在控制结构对向具有腐蚀坑的半导体开关元件阳极侧的平面图;
图6是本发明另一最佳实施例具有细分为若干控制区的控制结构因而可以关断的半导体开关元件的横向剖视图。
虽然本发明并不局限于FCTh或GTO型可关断的半导体开关元件，但下面将特别就这类半导体元件进行介绍和说明。
图1是欧洲专利EP-Al    0，121，068中介绍的那种具有阶梯式栅-阴结构可以关断的半导体开关元件外形的透视图。
这种半导体开关元件主要包括一个在阳极与阴极之间具有不同掺杂层（图中未示出）的大面积半导体衬底1。
在阴极侧（图1中的上边）可以看到，例如，两排各含有六个突出围绕其四周更深的栅极平面设置的平行阴极指8。阴极指8与中介栅区一起，构成控制结构，流经半导体开关元件的电流即可借助于此控制结构使其导通或截止。同时，显然电流实质上局限在半导体衬底1为阴极指8所限定的部位上。
半导体衬底1内部层系的固有性能视其为GTO型抑或FCTh型而定。下面将以GTO型为例进行介绍。因此，在图2中展示了图1元件沿图1中A-A线表示的平面的横截面。
从图2中可以看到，在细分成对应于阴极指8各个部位的金属阳极9与金属阴极7之间配置有一P+掺杂阳极层2、一n-掺杂n型基区层3、一P掺杂P-基区层4，且在各阴极指8顶部配置有一n+掺杂阴极层5。金属栅极触片6围绕阴极指周围，供控制元件之用，在更深层配置的栅极平面上与P型基区层4接触。
在上述专利中介绍了GTO的工作原理。
为改善电气性能，可按周知的方式在n型基区层3与阳极层2之间另外加一n+掺杂阻隔层3a，如图2中虚线所示。
前面已经讲过，为了对图2所示的元件进行以阻隔层3a的厚度作为随n型基区层3与阻隔层3a的特定恒定厚度和而变化的参量的关断特性模拟计算，采用了适当的计算程序。
此模拟计算的结果如图3当GTO截止时阳极电流IA随时间t而变化的关系曲线图。在此关系中，取导通状态电流为7.3A，阳极电压为1600伏。对这三种不同曲线a、b和c，选用下列阻隔层厚度值：
曲线a∶10微米
曲线b∶30微米
曲线c∶90微米
厚度和是不变的，因此阻隔层3a厚度值的增加与对应于n型基区层3厚度的相应减少。
现在从图3可以清楚地显示出：由于n型基区层3厚度减小了，阳极电流在关断之后下降得越来越快。另一方面，相应的关断时间Tf，曲线a超过5微秒，曲线b减少到2.9微秒，曲线c则最后减少到1.7微秒，这相当于缩短了三分之二以上的时间。
从这一点甚至还可以知道，相应厚度的减小实质上改善了元件的电气性能。
对n型基区层3和阻隔层3a恒定厚度和进行模拟计算所提出的假设是基于下述模型的一种人为限制。
GTO就FCTh的电气性能实际上可通过下列事实加以改善：在阻隔层厚度保持不变的情况下，n型基区层，从而半导体衬底，经上述处理过后，从整体来讲是变得更薄了。于是图2所示的元件就成了具有图4所示横截面的那种元件。
在阴极方面，与图2中的普通元件比较，并没有改变阴极指8的结构、阴极层5和P型基区层4。
相反，在图4的新型GTO中，n型基区层3在形成控制结构的阴极指8部位设计得更薄了，但阻隔层3a和阳极层2的厚度与图2的比较实质上没有变化。
局部厚度的减小是通过从阳极侧往半导体基片中引入深腐蚀坑10实现的。腐蚀可采用例如周知的反应离子腐蚀（RIE）法或适当的湿式化学法（例如，辊蚀）进行。在这方面，重要的是，腐蚀要达到必要的均匀度，以防厚度变化达到不能容许的程度。此外，若腐蚀坑10的底部边缘呈圆形，则在机械上和电气上都有好处。
腐蚀是在起始的n掺杂衬底上进行的，这便于以后扩散入阻隔层3a和阳极层2中。
为使衬底机械性能稳定，腐蚀必须只能取腐蚀坑10的形式在控制结构对过的部位局部进行。这样，隆起的边缘连同原来的厚度连续形成一体，在腐蚀坑10周围形成机械性能稳定的结构。
这可从图5A和5B    GTO原型从阴极和阳极侧（分别从图5A和5B）看起的示意图中特别看得一清二楚。从图5A中可清楚看到，阴极侧的控制结构由两组总共约40个为栅极接触片6所包围的阴极指组成。在元件边缘，边缘轮廓线即为钝化部分11。
从阳极侧（图5B）可以看到，在控制结构的正对面设有两个相应延伸起减少元件载流部分厚度的作用的腐蚀坑10。在此情况下，腐蚀坑10完全为划有阴影线的原厚度部分所包围。
从图4可以看出，若将阳极9主体中的腐蚀坑10完全进行金属化，因而从机械观点看又抵消了减小厚度的作用，则可以进一步提高机械上的稳定性。这可以在例如将半导体衬底钎焊到基区上时将腐蚀坑充以钎料来进行。
提高机械稳定性的另一种措施可参照图6加以说明。在电流较大（例如100安）的元件中，阴极侧的控制结构可再分为若干彼此分开的独立区16（各个例如按10安设计）。然后可以把阳极侧较大的腐蚀坑再分为更小的部分，以便在较小腐蚀坑10之间形成新的在机械上稳定的隆起部分。
图6进一步展示充满腐蚀坑10的钎焊层15，半导体衬底1就是用此钎焊层15无中空地钎焊到金属基片14上。
在图6所示的元件中，可以看到边缘沟槽12，在“沟槽”式的边缘区终端接法中，这些沟槽是必需的。在这方面，显然本发明具有一个独特的优点：由于减少腐蚀坑10厚度的作法并没有触动边缘区，即保留原厚度，因而不会另外产生涉及与阻挡能力有关的边缘区的问题。
最后，从图6中可以看到阴极触片13，在各控制区16中就是用阴极触片13与阴极指8接触。
在普通那种反向电压在1.2千伏与3千伏之间的半导体元件中，n型基区层的厚度迄今已达200～250微米左右。根据本发明，n型基区层在腐蚀坑区的厚度目前减少到200微米以下，最好在80和150微米之间，因而缩短了开关时间和减少了导通状态下的功耗。
以GTO或FCTh为例介绍的阳极深腐蚀技术不仅给这种而且也给其它半导体元件带来好处：例如，由于硅衬底的厚度减小了，因而即使在电流实质上轴向流动的二极管和晶体管中也能取得较低的导通状态的功耗。同时，这样就可以制造反向电压高于1000伏左右的金属氧化物半导体场效应晶体管。
特别是在二极管的情况，在这方面还有利于对阴极而无需对阳极或两侧面进行深腐蚀。
总的说来，这样就可用本发明以简单的方式制取各种各样在电气性能上有显著改进的半导体元件。

Claims (6)

1、一种具有大面积半导体衬底(1)在对向配置的电极之间有多个不同掺杂层的半导体元件，其特征在于，为了改善该元件的电气性能，至少在半导体衬底(1)的一侧引入深腐蚀坑(10)，以减少半导体衬底(1)载流区的厚度。
2、如权利要求1所述的半导体元件，其特征在于：
（甲）半导体衬底（1）具有能通过栅极加以关断的（GTO型）半导体开关元件层系或场控制型半导体开关元件（FCTh）层系，该层系配置在阳极与阴极之间，
（乙）半导体衬底（1）在阴极侧具有一栅-阴结构，该栅-阴结构按阶梯形式构成，在该结构中，多个阴极指（8）从更深配置的栅极平面突出，形成具有中介栅区的控制结构;
（丙）腐蚀坑（10）配置在控制结构对向的阳极侧。
3、如权利要求2所述的半导体元件，其特征在于，P掺杂阳极层（2）和其上的n型轻掺杂的n型基区层（3）系配置在阴极侧的半导体衬底（1）中，且减少腐蚀坑（10）部位中半导体衬底的厚度实质上是靠消耗n型基区层（3）的厚度而取得的。
4、如权利要求3所述的半导体元件，其特征在于，在阳极层（2）与n型基区层（3a）之间设有n型强掺杂的阻隔层（3a）。
5、如权利要求3所述的半导体元件，其特征在于，n型基区层（3）在腐蚀坑（10）部位的厚度小于200微米，最好是在80和150微米之间的范围内。
6、如权利要求2所述的半导体元件，其特征在于，控制结构再划分为若干彼此分开的控制区（16），且在控制区（16）对过配置有面积大致与控制区（16）相等的腐蚀坑（10）。
7、如权利要求2所述的半导体元件，其特征在于，半导体衬底（1）在阳极侧钎焊到金属基片（14）上，且腐蚀坑完全充满钎料。
CN87106746.3A 1986-10-01 1987-10-01 半导体元件 Expired CN1004735B (zh)

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