CN104126225B - 半导体装置 - Google Patents
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Abstract
冷却片(9)与半导体元件(1)的下表面接合。树脂(10)对半导体元件(1)进行封装。冷却片(9)的一部分从树脂(10)的下表面突出。冷却器(11)具有开口(12)。从树脂(10)突出的冷却片(9)插入冷却器(11)的开口(12)。树脂(10)的下表面和冷却器(11)通过粘接材料等接合材料(13)而接合。由此,能够实现部件数量削减·轻量化,并且兼顾热传导性和接合强度。
Description
技术领域
本发明涉及一种将树脂模塑成型的半导体封装体接合在冷却装置上的半导体装置。
背景技术
在现有的封装型功率模块中,需要对半导体元件进行硅胶封装,组装工序数较多,部件成本较高。而且,开发有对半导体元件进行了传递模塑的功率模块(例如参照专利文献1)。需要将树脂模塑成型的半导体封装体固定在冷却装置上以用于冷却,提出有使用螺钉等进行固定的方法(例如,参照专利文献2)。
专利文献1:日本特开2001-250890号公报
专利文献2:专利第4583122号公报
发明内容
在使用螺钉等的固定方法中,存在有部件数量增加,重量增加这样的问题。另一方面,也研究有不使用螺钉等而将半导体封装体接合在冷却装置上的方法,但是由于冷却部分和接合部分相同,所以无法兼顾热传导性和接合强度。
本发明就是为了解决如上述的课题而提出的,其目的在于得到一种能够实现部件数量削减·轻量化,并且能够兼顾热传导性和接合强度的半导体装置。
本发明涉及的半导体装置的特征在于,具有:半导体元件;冷却体,其与所述半导体元件接合;树脂,其对所述半导体元件进行封装;以及冷却器,其具有开口,所述冷却体的一部分从所述树脂的主表面突出,从所述树脂突出的所述冷却体插入所述冷却器的所述开口,所述树脂的所述主表面和所述冷却器通过接合材料而接合。
发明的效果
根据本发明,能够实现部件数量削减·轻量化,并且能够兼顾热传导性和接合强度。
附图说明
图1是表示本发明的实施方式1涉及的半导体装置的剖面图。
图2是表示本发明的实施方式2涉及的半导体装置的剖面图。
图3是表示本发明的实施方式3涉及的半导体装置的剖面图。
图4是表示本发明的实施方式4涉及的半导体装置的剖面图。
具体实施方式
参照附图说明本发明的实施方式涉及的半导体装置。对相同或者相对应的结构要素标注相同的标号,有时省略重复说明。
实施方式1
图1是表示本发明的实施方式1涉及的半导体装置的剖面图。半导体元件1是IGBT(Insulated Gate Bipolar Transistor)等功率半导体元件。半导体元件1的控制端子(栅极)通过导线2与信号电极3连接。半导体元件1的下表面(集电极)通过在绝缘板4上设置的电路图案5与高压电极6连接。半导体元件1的上表面(发射极)通过焊料7与高压电极8连接。
冷却片9通过电路图案5和绝缘板4与半导体元件1的下表面接合。树脂10对半导体元件1等进行封装(传递模塑)。冷却片9的一部分从树脂10的下表面突出。信号电极3和高压电极6、8也从树脂10导出。
该树脂模塑成型的半导体封装体与冷却器11接合。冷却器11具有开口12。从树脂10突出的冷却片9插入冷却器11的开口12。树脂10的下表面和冷却器11通过粘接材料等接合材料13而接合。冷却器11在开口12内向冷却片9供给冷却介质。由此,通过冷却片9而半导体元件1被冷却。
如上所述,通过明确区分开冷却部分和接合部分,从而能够兼顾热传导性和接合强度。即使在例如半导体元件1进行高温动作,从而冷却部分变为高温的情况下,也抑制接合部分的温度变化。因此,能够使用作为高温动作保障部件的SiC的半导体元件1。并且,也无需追加螺钉等的构造部件,所以也能够实现部件数量削减·轻量化。
此外,在现有的装置中,在冷却体和冷却器之间夹着热传导材料,所以半导体装置与热传导材料的厚度相对应地发生翘曲。但是,在本实施方式中,冷却片9插入冷却器11的开口12,所以能够不受装置翘曲的影响而确保冷却性能。
此外,在半导体元件1和冷却片9之间设有绝缘板4,所以作为冷却介质,能够使用水等导电性流体。由此,能够确保冷却性能。但是,在冷却介质为空气、绝缘流体等的绝缘板的情况下,也可以省略绝缘板4而在冷却片9上设置半导体元件1、电路图案5。
此外,优选在树脂10的下表面实施用于提高与接合材料13的接合强度的表面处理。优选实施例如使接合表面变粗糙的亲水化处理。
实施方式2
图2是表示本发明的实施方式2涉及的半导体装置的剖面图。在树脂10的下表面设置凹部14,接合材料13迂回嵌入凹部14而成为锚固构造。由此,接合面积增加,所以接合强度提高。其他的结构与实施方式1相同。
实施方式3
图3是表示本发明的实施方式3涉及的半导体装置的剖面图。本实施方式将本发明应用于使冷却能力提高的双面冷却构造中。
在实施方式1的结构中,追加如以下所述的结构。即,冷却片15经由高压电极8和绝缘板16与半导体元件1的上表面接合。冷却器17具有开口18。冷却片15的一部分从树脂10的上表面突出。从树脂10突出的冷却片15插入冷却器17的开口18中。树脂10的上表面和冷却器17通过接合材料19而接合。
关于半导体元件1的上侧的冷却构造,也能够得到与如实施方式1的半导体元件1的下侧的冷却构造同样的效果。另外,也可以在树脂10的上表面和下表面设置如实施方式2的锚固构造。
实施方式4
图4是表示本发明的实施方式4涉及的半导体装置的剖面图。冷却片9是陶瓷的绝缘材料20和高热传导性的导电材料21的复合构造。其他的结构与实施方式1相同。
能够通过如上述地将导电材料21嵌入绝缘材料20的内部,从而提高冷却片9的热传导率。此外,导电材料21通过绝缘材料20而与半导体元件1电绝缘,所以也能够确保绝缘性。
另外,在插入到冷却器11的开口12的部分处,导电材料21也可以从绝缘材料20露出。此外,也可以将如本实施方式的冷却片9的复合构造应用于实施方式2、3。
标号的说明
1 半导体元件
4 绝缘板
9 冷却片(第1冷却体)
10 树脂
11 冷却器(第1冷却器)
12 开口(第1开口)
13 接合材料(第1接合材料)
14 凹部
15 冷却片(第2冷却体)
17 冷却器(第2冷却器)
18 开口(第2开口)
19 接合材料(第2接合材料)
20 绝缘材料
21 导电材料
Claims (8)
1.一种半导体装置,其特征在于,具有:
半导体元件;
冷却体,其与所述半导体元件接合;
树脂,其对所述半导体元件进行封装;
冷却器,其具有开口,
所述冷却体的一部分从所述树脂的主表面突出,
从所述树脂突出的所述冷却体插入所述冷却器的所述开口,
所述树脂的所述主表面和所述冷却器通过接合材料而接合。
2.根据权利要求1所述的半导体装置,其特征在于,
所述冷却器在所述开口内向所述冷却体供给冷却介质。
3.根据权利要求1或2所述的半导体装置,其特征在于,
还具有在所述半导体元件和所述冷却体之间设置的绝缘板。
4.根据权利要求1或2所述的半导体装置,其特征在于,
在所述树脂的所述主表面上实施用于提高与所述接合材料的接合强度的表面处理。
5.根据权利要求4所述的半导体装置,其特征在于,
所述表面处理是使接合表面变粗糙的亲水化处理。
6.根据权利要求1或2所述的半导体装置,其特征在于,
在所述树脂的所述主表面设置凹部,
所述接合材料迂回嵌入所述凹部而成为锚固构造。
7.根据权利要求1或2所述的半导体装置,其特征在于,
所述冷却体具有与所述半导体元件的下表面接合的第1冷却体,以及与所述半导体元件的上表面接合的第2冷却体,
所述冷却器具有:具有第1开口的第1冷却器、以及具有第2开口的第2冷却器,
所述第1冷却体的一部分从所述树脂的下表面突出,
所述第2冷却体的一部分从所述树脂的上表面突出,
从所述树脂突出的所述第1冷却体插入所述第1冷却器的所述第1开口,
从所述树脂突出的所述第2冷却体插入所述第2冷却器的所述第2开口,
所述树脂的所述下表面和所述第1冷却器通过第1接合材料而接合,
所述树脂的所述上表面和所述第2冷却器通过第2接合材料接合。
8.根据权利要求1或2所述的半导体装置,其特征在于,
所述冷却体为绝缘材料和导电材料的复合构造。
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PCT/JP2012/053375 WO2013121521A1 (ja) | 2012-02-14 | 2012-02-14 | 半導体装置 |
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US9015859B2 (en) | 2012-02-15 | 2015-04-21 | Empire Technology Development Llc | Contextual use and expiration of digital content |
DE102016222909A1 (de) * | 2016-11-21 | 2018-05-24 | Robert Bosch Gmbh | Kühlkörper zur Kühlung eines Leistungsmoduls und Verfahren zur Herstellung eines Kühlkörpers |
US20190357386A1 (en) * | 2018-05-16 | 2019-11-21 | GM Global Technology Operations LLC | Vascular polymeric assembly |
US11764126B2 (en) * | 2018-11-12 | 2023-09-19 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing semiconductor device |
JP7176397B2 (ja) * | 2018-12-21 | 2022-11-22 | 株式会社デンソー | 半導体装置とその製造方法 |
DE102020205979A1 (de) | 2020-05-12 | 2021-11-18 | Robert Bosch Gesellschaft mit beschränkter Haftung | Leistungsmodul mit einer Wärmesenke |
EP4060724B1 (en) * | 2021-03-19 | 2023-08-23 | Hitachi Energy Switzerland AG | A power module comprising at least one semiconductor module, and a method for manufacturing a power module |
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JP2005064131A (ja) * | 2003-08-08 | 2005-03-10 | Denso Corp | 半導体装置 |
JP2012004218A (ja) * | 2010-06-15 | 2012-01-05 | Mitsubishi Electric Corp | 半導体装置 |
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US6712948B1 (en) | 1998-11-13 | 2004-03-30 | Enthone Inc. | Process for metallizing a plastic surface |
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- 2012-02-14 CN CN201280069780.4A patent/CN104126225B/zh active Active
- 2012-02-14 US US14/357,669 patent/US9324630B2/en active Active
- 2012-02-14 WO PCT/JP2012/053375 patent/WO2013121521A1/ja active Application Filing
- 2012-02-14 JP JP2013558613A patent/JP5786972B2/ja active Active
- 2012-02-14 DE DE112012005867.4T patent/DE112012005867B4/de active Active
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JP2005064131A (ja) * | 2003-08-08 | 2005-03-10 | Denso Corp | 半導体装置 |
JP2012004218A (ja) * | 2010-06-15 | 2012-01-05 | Mitsubishi Electric Corp | 半導体装置 |
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CN104126225A (zh) | 2014-10-29 |
JP5786972B2 (ja) | 2015-09-30 |
US9324630B2 (en) | 2016-04-26 |
DE112012005867T5 (de) | 2014-11-13 |
JPWO2013121521A1 (ja) | 2015-05-11 |
US20150108629A1 (en) | 2015-04-23 |
DE112012005867B4 (de) | 2021-10-07 |
WO2013121521A1 (ja) | 2013-08-22 |
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