CN104064217A - 非易失性半导体存储器的检查方法及存储检查程序的记录介质 - Google Patents
非易失性半导体存储器的检查方法及存储检查程序的记录介质 Download PDFInfo
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- CN104064217A CN104064217A CN201310557298.1A CN201310557298A CN104064217A CN 104064217 A CN104064217 A CN 104064217A CN 201310557298 A CN201310557298 A CN 201310557298A CN 104064217 A CN104064217 A CN 104064217A
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
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- G—PHYSICS
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0401—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals in embedded memories
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Abstract
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US61/803,932 | 2013-03-21 |
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CN104064217A true CN104064217A (zh) | 2014-09-24 |
CN104064217B CN104064217B (zh) | 2018-01-26 |
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Country Status (3)
Country | Link |
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US (1) | US9032264B2 (zh) |
CN (1) | CN104064217B (zh) |
TW (1) | TWI533314B (zh) |
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CN109686397A (zh) * | 2017-10-18 | 2019-04-26 | 天津市中力神盾电子科技有限公司 | 具有自检功能的存储器及其检测方法 |
CN111312323A (zh) * | 2020-03-11 | 2020-06-19 | 展讯通信(上海)有限公司 | Sram时序测试电路、方法和存储器 |
CN111883197A (zh) * | 2019-05-03 | 2020-11-03 | 爱思开海力士有限公司 | 存储装置及其操作方法 |
CN113380312A (zh) * | 2020-05-28 | 2021-09-10 | 台湾积体电路制造股份有限公司 | 存储器阵列测试方法和系统 |
CN114265548A (zh) * | 2020-09-16 | 2022-04-01 | 铠侠股份有限公司 | 半导体装置以及芯片控制方法 |
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US9142324B2 (en) * | 2013-09-03 | 2015-09-22 | Sandisk Technologies Inc. | Bad block reconfiguration in nonvolatile memory |
KR102154620B1 (ko) * | 2013-12-19 | 2020-09-10 | 삼성전자주식회사 | 비휘발성 메모리 장치의 소거 방법 및 그것을 포함하는 저장 장치 |
US9443616B2 (en) * | 2014-04-02 | 2016-09-13 | Seagate Technology Llc | Bad memory unit detection in a solid state drive |
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US9934872B2 (en) | 2014-10-30 | 2018-04-03 | Sandisk Technologies Llc | Erase stress and delta erase loop count methods for various fail modes in non-volatile memory |
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KR102266733B1 (ko) * | 2015-06-05 | 2021-06-22 | 삼성전자주식회사 | 데이터 스토리지 및 그것의 동작 방법 |
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TWI629588B (zh) * | 2015-09-17 | 2018-07-11 | 深圳衡宇芯片科技有限公司 | 用來偵測sata固態硬碟問題單元的方法及具有自我偵測尋找問題單元功能的sata固態硬碟 |
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KR20170052066A (ko) * | 2015-11-03 | 2017-05-12 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 이의 동작 방법 |
KR102413755B1 (ko) * | 2015-11-20 | 2022-06-28 | 삼성전자주식회사 | 리텐션 특성에 의한 성능 저하를 복구하는 저장 장치의 동작 방법 및 이를 포함하는 데이터 처리 시스템의 동작 방법 |
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JP2018092690A (ja) * | 2016-11-30 | 2018-06-14 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体集積システム |
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JP6797727B2 (ja) * | 2017-03-21 | 2020-12-09 | キオクシア株式会社 | 半導体記憶装置 |
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- 2013-10-28 TW TW102138957A patent/TWI533314B/zh not_active IP Right Cessation
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109686397A (zh) * | 2017-10-18 | 2019-04-26 | 天津市中力神盾电子科技有限公司 | 具有自检功能的存储器及其检测方法 |
CN109686397B (zh) * | 2017-10-18 | 2021-08-17 | 天津市中力神盾电子科技有限公司 | 具有自检功能的存储器及其检测方法 |
CN111883197A (zh) * | 2019-05-03 | 2020-11-03 | 爱思开海力士有限公司 | 存储装置及其操作方法 |
CN111883197B (zh) * | 2019-05-03 | 2024-06-07 | 爱思开海力士有限公司 | 存储装置及其操作方法 |
CN111312323A (zh) * | 2020-03-11 | 2020-06-19 | 展讯通信(上海)有限公司 | Sram时序测试电路、方法和存储器 |
CN113380312A (zh) * | 2020-05-28 | 2021-09-10 | 台湾积体电路制造股份有限公司 | 存储器阵列测试方法和系统 |
CN113380312B (zh) * | 2020-05-28 | 2023-09-22 | 台湾积体电路制造股份有限公司 | 存储器阵列测试方法和系统 |
CN114265548A (zh) * | 2020-09-16 | 2022-04-01 | 铠侠股份有限公司 | 半导体装置以及芯片控制方法 |
CN114265548B (zh) * | 2020-09-16 | 2024-03-15 | 铠侠股份有限公司 | 半导体装置以及芯片控制方法 |
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CN104064217B (zh) | 2018-01-26 |
US9032264B2 (en) | 2015-05-12 |
TW201438017A (zh) | 2014-10-01 |
TWI533314B (zh) | 2016-05-11 |
US20140289559A1 (en) | 2014-09-25 |
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