CN103904124A - 具有u型延伸栅的soi槽型ldmos器件 - Google Patents
具有u型延伸栅的soi槽型ldmos器件 Download PDFInfo
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- CN103904124A CN103904124A CN201410142967.3A CN201410142967A CN103904124A CN 103904124 A CN103904124 A CN 103904124A CN 201410142967 A CN201410142967 A CN 201410142967A CN 103904124 A CN103904124 A CN 103904124A
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- semiconductor
- soi
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- doped semiconductor
- ldmos device
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- 239000004065 semiconductor Substances 0.000 claims abstract description 151
- 239000000463 material Substances 0.000 claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- 239000003989 dielectric material Substances 0.000 claims description 26
- 235000012239 silicon dioxide Nutrition 0.000 claims description 17
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- 229910003465 moissanite Inorganic materials 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 19
- 238000009825 accumulation Methods 0.000 abstract description 10
- 230000009467 reduction Effects 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000012856 packing Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000008094 contradictory effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
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Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410142967.3A CN103904124B (zh) | 2014-04-10 | 2014-04-10 | 具有u型延伸栅的soi槽型ldmos器件 |
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CN201410142967.3A CN103904124B (zh) | 2014-04-10 | 2014-04-10 | 具有u型延伸栅的soi槽型ldmos器件 |
Publications (2)
Publication Number | Publication Date |
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CN103904124A true CN103904124A (zh) | 2014-07-02 |
CN103904124B CN103904124B (zh) | 2016-08-17 |
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CN201410142967.3A Expired - Fee Related CN103904124B (zh) | 2014-04-10 | 2014-04-10 | 具有u型延伸栅的soi槽型ldmos器件 |
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105161420A (zh) * | 2015-07-13 | 2015-12-16 | 电子科技大学 | 一种横向mosfet器件的制造方法 |
CN106098754A (zh) * | 2016-08-25 | 2016-11-09 | 电子科技大学 | 横向高压功率器件的结终端结构 |
CN106129118A (zh) * | 2016-08-25 | 2016-11-16 | 电子科技大学 | 横向高压功率器件的结终端结构 |
CN107134481A (zh) * | 2017-05-08 | 2017-09-05 | 工业和信息化部电子第五研究所华东分所 | 一种电子元件及其制备方法 |
CN107195683A (zh) * | 2017-06-26 | 2017-09-22 | 电子科技大学 | 一种横向高压器件 |
CN107275388A (zh) * | 2017-06-26 | 2017-10-20 | 电子科技大学 | 一种横向高压器件 |
CN107425052A (zh) * | 2017-07-28 | 2017-12-01 | 电子科技大学 | 一种横向高压器件 |
CN107425067A (zh) * | 2017-05-08 | 2017-12-01 | 工业和信息化部电子第五研究所华东分所 | 一种新型电子元件及其制备方法 |
CN105185819B (zh) * | 2015-10-10 | 2018-05-29 | 工业和信息化部电子第五研究所华东分所 | 一种环形栅半导体功率器件和制备方法 |
CN110212032A (zh) * | 2019-05-31 | 2019-09-06 | 西安电子科技大学 | 一种栅控双极-场效应复合元素半导体基横向双扩散金属氧化物半导体晶体管 |
CN110416306A (zh) * | 2019-07-01 | 2019-11-05 | 长沙理工大学 | 一种具有阶梯分离栅l型槽横向器件 |
CN111162122A (zh) * | 2019-12-23 | 2020-05-15 | 广东美的白色家电技术创新中心有限公司 | 一种横向功率器件 |
CN114464673A (zh) * | 2022-04-11 | 2022-05-10 | 北京芯可鉴科技有限公司 | 双栅ldmosfet器件、制造方法及芯片 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020060339A1 (en) * | 2000-11-20 | 2002-05-23 | Michiaki Maruoka | Semiconductor device having field effect transistor with buried gate electrode surely overlapped with source region and process for fabrication thereof |
CN101393915A (zh) * | 2007-09-19 | 2009-03-25 | 恩益禧电子股份有限公司 | 具有沟槽栅极结构的半导体器件 |
JP2010171417A (ja) * | 2008-12-25 | 2010-08-05 | Rohm Co Ltd | 半導体装置 |
CN102790082A (zh) * | 2011-05-16 | 2012-11-21 | 瑞萨电子株式会社 | Ie型沟槽栅igbt |
-
2014
- 2014-04-10 CN CN201410142967.3A patent/CN103904124B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020060339A1 (en) * | 2000-11-20 | 2002-05-23 | Michiaki Maruoka | Semiconductor device having field effect transistor with buried gate electrode surely overlapped with source region and process for fabrication thereof |
CN101393915A (zh) * | 2007-09-19 | 2009-03-25 | 恩益禧电子股份有限公司 | 具有沟槽栅极结构的半导体器件 |
JP2010171417A (ja) * | 2008-12-25 | 2010-08-05 | Rohm Co Ltd | 半導体装置 |
CN102790082A (zh) * | 2011-05-16 | 2012-11-21 | 瑞萨电子株式会社 | Ie型沟槽栅igbt |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105161420A (zh) * | 2015-07-13 | 2015-12-16 | 电子科技大学 | 一种横向mosfet器件的制造方法 |
CN105161420B (zh) * | 2015-07-13 | 2017-10-13 | 电子科技大学 | 一种横向mosfet器件的制造方法 |
CN105185819B (zh) * | 2015-10-10 | 2018-05-29 | 工业和信息化部电子第五研究所华东分所 | 一种环形栅半导体功率器件和制备方法 |
CN106098754A (zh) * | 2016-08-25 | 2016-11-09 | 电子科技大学 | 横向高压功率器件的结终端结构 |
CN106129118A (zh) * | 2016-08-25 | 2016-11-16 | 电子科技大学 | 横向高压功率器件的结终端结构 |
CN106129118B (zh) * | 2016-08-25 | 2019-04-26 | 电子科技大学 | 横向高压功率器件的结终端结构 |
CN106098754B (zh) * | 2016-08-25 | 2019-04-12 | 电子科技大学 | 横向高压功率器件的结终端结构 |
CN107134481A (zh) * | 2017-05-08 | 2017-09-05 | 工业和信息化部电子第五研究所华东分所 | 一种电子元件及其制备方法 |
CN107425067A (zh) * | 2017-05-08 | 2017-12-01 | 工业和信息化部电子第五研究所华东分所 | 一种新型电子元件及其制备方法 |
CN107195683A (zh) * | 2017-06-26 | 2017-09-22 | 电子科技大学 | 一种横向高压器件 |
CN107275388A (zh) * | 2017-06-26 | 2017-10-20 | 电子科技大学 | 一种横向高压器件 |
CN107275388B (zh) * | 2017-06-26 | 2021-06-08 | 电子科技大学 | 一种横向高压器件 |
CN107425052A (zh) * | 2017-07-28 | 2017-12-01 | 电子科技大学 | 一种横向高压器件 |
CN110212032A (zh) * | 2019-05-31 | 2019-09-06 | 西安电子科技大学 | 一种栅控双极-场效应复合元素半导体基横向双扩散金属氧化物半导体晶体管 |
CN110212032B (zh) * | 2019-05-31 | 2021-04-13 | 西安电子科技大学 | 一种栅控双极-场效应复合元素半导体基横向双扩散金属氧化物半导体晶体管 |
CN110416306A (zh) * | 2019-07-01 | 2019-11-05 | 长沙理工大学 | 一种具有阶梯分离栅l型槽横向器件 |
CN111162122A (zh) * | 2019-12-23 | 2020-05-15 | 广东美的白色家电技术创新中心有限公司 | 一种横向功率器件 |
CN111162122B (zh) * | 2019-12-23 | 2023-02-24 | 广东美的白色家电技术创新中心有限公司 | 一种横向功率器件 |
CN114464673A (zh) * | 2022-04-11 | 2022-05-10 | 北京芯可鉴科技有限公司 | 双栅ldmosfet器件、制造方法及芯片 |
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Publication number | Publication date |
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CN103904124B (zh) | 2016-08-17 |
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Legal Events
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C53 | Correction of patent of invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Luo Xiaorong Inventor after: Tian Ruichao Inventor after: Xu Jing Inventor after: Shi Xianlong Inventor after: Li Pengcheng Inventor after: Wei Jie Inventor after: Wang Zhuo Inventor after: Zhang Bo Inventor before: Luo Xiaorong Inventor before: Tian Ruichao Inventor before: Xu Jing Inventor before: Shi Xianlong Inventor before: Li Pengcheng Inventor before: Wei Jie Inventor before: Zhang Bo |
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COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: LUO XIAORONG TIAN RUICHAO XU JING SHI XIANLONG LI PENGCHENG WEI JIE ZHANG BO TO: LUO XIAORONG TIAN RUICHAO XU JING SHI XIANLONG LI PENGCHENG WEI JIE WANG ZHUO ZHANG BO |
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Granted publication date: 20160817 Termination date: 20200410 |