CN103811447B - 焊料、接点结构及接点结构的制作方法 - Google Patents

焊料、接点结构及接点结构的制作方法 Download PDF

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CN103811447B
CN103811447B CN201310008305.2A CN201310008305A CN103811447B CN 103811447 B CN103811447 B CN 103811447B CN 201310008305 A CN201310008305 A CN 201310008305A CN 103811447 B CN103811447 B CN 103811447B
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zinc
metal level
auzn
solder
jie
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CN103811447A (zh
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高国书
张道智
陈文志
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Industrial Technology Research Institute ITRI
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Industrial Technology Research Institute ITRI
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
    • B23K35/282—Zn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013—Au as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
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Abstract

本发明公开一种焊料、接点结构及接点结构的制作方法。焊料包括锌基金属层、铜金属膜与贵金属膜。铜金属膜完全覆盖锌基金属层的表面，而贵金属膜完全包覆铜金属膜。接点结构包括锌基金属层以及介金属层。介金属层由锌与贵金属所组成，且介金属层完全覆盖锌基金属层的表面。

Description

焊料、接点结构及接点结构的制作方法
技术领域
本发明涉及一种半导体装置及其制作方法，且特别是涉及一种接点结构、用于形成接点结构的焊料及接点结构的制作方法。
背景技术
为了提升功率模块的能量转换效率，以碳化硅（silicon carbide,SiC）或氮化镓（gallium nitride,GaN）取代硅基底来制作元件，被视为新一代的功率半导体开关技术。以碳化硅元件为例，其提供更低的导通阻抗，更快的切换速度，更低的功率损失（power loss），且可承受更高温的操作环境，符合高功率元件技术的发展趋势。然而，芯片的接面温度（junction temperature,Tj）在硅基功率模块运作时仅约为150°C，尚在无铅焊锡（例如Sn3.0Ag0.5Cu）可忍受的温度范围内。导入碳化硅功率模块后，以中小瓦数的电源管理模块而言，Tj高于175°C。而Sn3.0Ag0.5Cu的起始熔化温度仅217°C，在此温度环境下，将会发生剧烈的潜变（creep）效应，不利于接点机械强度的维持，无法满足对长期可靠度的要求，更遑论应用于Tj高达250°C的车用电力模块等产品。因此，对碳化硅功率模块封装而言，耐高温无铅焊料将是决定产品品质与寿命的关键因素之一。
有鉴于此，许多研究机构已积极投入高温无铅焊料或耐高温固晶工艺开发。目前广泛使用的高温无铅焊料例如金基合金焊料（AuSn-based solder）、铋基合金焊料（BiAg-based solder）、纳米银金属粉末烧结（Ag pastesintering）、及锌基焊料（Zn-based solder）等。
锌基焊料相较于其他高温焊料而言，具有成本低、接合范围适当（propermelting range）及良好的热电传导特性，极为适合取代其他高温焊料，运用于功率模块组装。然而，锌基焊料容易氧化，且在高温接合工艺中，容易与其他金属（例如铜）反应生成介金属化合物（如CuZn5与Cu5Zn8），不利于功率模块的长期可靠性。
发明内容
本发明提供一种焊料，具有良好的储存安定性，可用以制作具有良好可靠度的接点结构。
本发明提供一种接点结构，具有良好的可靠度。
本发明提供一种接点结构的制作方法，可以制作出具有良好可靠度的封装结构。
本发明提出一种焊料，其包括锌基金属层、铜金属膜以及贵金属膜。铜金属膜完全覆盖锌基金属层的表面，而贵金属膜完全包覆铜金属膜。
本发明提出一种接点结构，其包括锌基金属层与介金属层。介金属层由锌与贵金属所组成，且完全覆盖锌基金属层的表面。
在本发明的一实施例中，接点结构还包括高熔点金属层，且高熔点金属层配置于介金属层的四周围。
本发明提供一种接点结构的制作方法。所述制作方法包括下述步骤。首先，提供焊料。所述焊料包括锌基金属层、铜金属膜与贵金属膜。铜金属膜完全覆盖锌基金属层的表面。贵金属膜完全包覆铜金属膜。而后，加热焊料，使铜金属膜所含的铜扩散进入锌基金属层；且使贵金属膜所含的贵金属与锌基金属层所含的锌反应，由贵金属与锌形成包覆锌基金属层的介金属层。
在本发明的多个实施例中，锌基金属层的材料包括锌、锌锡合金、锌铝合金或锌铝铜合金，且在锌基金属层中，锌占的比例大于90wt%。
在本发明的多个实施例中，贵金属例如是金、银或钯。
在本发明的多个实施例中，介金属层的材料例如是AuZn、AuZn3、AuZn8、Au5Zn3、Au3Zn7、AuZn2、AuZn7、AuZn4、AgZn、AgZn3、Ag5Zn8、PdZn、Pd2Zn、PdZn2、Pd2Zn8。
基于上述，本发明的各实施例中，在锌基金属层的表面形成铜金属膜与贵金属膜来作为焊料，而具有良好的储存安定性。接合时，焊料中的锌与贵金属反应，形成介金属层。介金属层可保护锌基金属层，使其不易与外界元素反应，还可抑制界面缺陷产生，及防止锌须成长。由此，可形成可靠的耐高温接点结构。
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合所附附图作详细说明如下。
附图说明
图1A是第一实施例的焊料的立体图；
图1B与图1C分别是沿着图1A中的AA’线与BB’线绘示的剖视图；
图2A至图2C是第二实施例的一种封装结构制作方法的流程剖视图；
图3A、图3B与图3F是第三实施例的一种封装结构制作方法的流程剖视图；
图3C是第三实施例的接点结构的立体示意图；
图3D与图3E分别是沿着图3C中的CC’线与DD’线绘示的剖视图。
主要元件符号说明
101、103、105、201、203、205：金属层
102、202：芯片
104、204：载板
110、120、210、220：焊料
111、211：接点结构
112、212：锌基金属层
112a、112b：表面
114、214：铜金属膜
116、216：贵金属膜
118、218：介金属层
130、230：散热板
209：高熔点金属层
具体实施方式
图1A是根据第一实施例的焊料110绘示的立体示意图，图1B与图1C分别是沿着图1A中的AA’线与BB’线绘示的剖视图。
参照图1A至图1C，焊料110包括锌基金属层112、铜金属膜114与贵金属膜116。根据图1B与图1C可以看出，铜金属膜114完全覆盖锌基金属层112的表面112a，而贵金属膜116完全包覆铜金属膜114。
在本说明书中，「锌基金属层」意指主要由锌组成的金属层。在各种实施例中，锌基金属层可以是现有的锌基焊料，其材料可为纯锌、锌锡合金、锌铝合金或锌铝铜合金。在一实施例中，锌基金属层的锌含量例如大于90wt%。
在本说明书中，「贵金属」意指金、钯、铂、铑、银、钌、锇或铱。常用的贵金属例如是金、银或钯。在以下各实施例中，贵金属是以金为例进行说明。
图2A至图2C是根据第二实施例而绘示的一种封装结构制作方法的流程剖视图。
参照图2A，首先，提供芯片102与载板104。芯片102可以是任意一种半导体芯片。如果以基底的材料分类，可例举硅基（Si-based）元件、碳化硅基（SiC-based）元件或氮化镓基（GaN-based）元件。如果以元件的类型分类，可例举金氧半导体晶体管（MOSFET）或绝缘闸双极晶体管（insulatedgate bipolar transistor,IGBT）芯片。载板104可以是适于与芯片102接合的任意基板，例如铜基板、覆铜陶瓷基板（Direct bonded copper,DBC）、硅中介层、导线架（lead frame）、电镀铜陶瓷基板、印刷电路板或另一芯片。
接着，在芯片102与载板104之间配置焊料110。焊料110可以预先形成，并储存备用。
如第一实施例所述，焊料110包括锌基金属层112、铜金属膜114以及贵金属膜116。锌基金属层112具有表面112a。在本实施例中，表面112a意指锌基金属层112的整个外表面。在图2A所示的状况中，表面112a包括锌基金属层112的上表面、下表面以及侧表面。铜金属膜114完全覆盖锌基金属层112的表面112a。贵金属膜116则再完全包覆铜金属膜114。介于锌基金属层112与贵金属膜116之间的铜金属膜114可以避免锌基金属层112与贵金属膜116在焊料110的储存期间发生反应。铜金属膜114与贵金属膜116例如是以溅镀的方式形成，但本发明不限于此，凡是沉积工艺领域中适于形成金属薄膜的制作工艺，均可用来形成铜金属膜114与贵金属膜116。
此外，芯片102上还可以形成一层金属层101。金属层101配置于芯片102待与焊料110相接的表面，其材料例如为镍或铜。在第二实施例中，金属层101的材料为铜。再者，载板104的上下表面处也可配置有金属层103与金属层105，其材料的选择可与金属层101相同。在第二实施例中，金属层103与金属层105的材料也可为铜。金属层101、金属层103与金属层105的形成方法可与铜金属膜114与贵金属膜116的形成方法相同。
参照图2B，加热焊料110，加热的温度需视焊料110所含的金属而选择，在本实施例中，加热温度例如是250℃～300℃；且加热例如是以热压、汽相真空回焊等方式进行。在加热的同时，可对焊料110施予压力，避免界面孔隙的形成。此处所谓的界面，指焊料与芯片或载板的接合处，在第二实施例中，即为焊料110与金属层101和金属层103的接合处。
加热的过程中，焊料110中的各金属元素（在第二实施例中为锌、铜、金）交互扩散（inter-diffusion），铜金属膜114中的铜扩散进入锌基金属层112，且加热完成后可能大致停驻在锌基金属层112的表面112b附近。由此，可能提高锌基金属层112的机械性质（如强度或延展性），使得接点结构111具有较佳的可靠度。加热过程使得铜扩散进入锌基金属层112中，因此，加热前后的锌基金属层112所含的成份略有不同，但是仍以锌为其主材料。
由于焊料110中的各金属元素在加热过程中会交互扩散，甚至反应而形成介金属（以下将有更详细的说明），锌基金属层112的「表面」可能会移动，因此，在图2B中以不同的标号112b来标示锌基金属层112经历加热以后的表面，以与图2A（以及图1B、图1C）的表面112a区分。
在第二实施例中，铜金属膜114所含的铜实质上全部扩散进入锌基金属层112，因此，制作工艺完成以后，接点结构中实质上见不到铜金属膜114的存在。
在第二实施例中，贵金属膜116中的金与锌基金属层112中的锌交互扩散，从而形成完全包覆锌基金属层112的介金属层118。介金属层118的材料例如为AuZn、AuZn3、AuZn8、Au5Zn3、Au3Zn7、AuZn2、AuZn7、AuZn4。
介金属层118是稳定性很高的材料，可以抑制锌基金属层112的氧化，减少接合处的界面缺陷与锌须的产生，有效提升封装结构的耐温性与长期可靠度。
参照图2C，在芯片102与载板104为功率模块的一部分的实施例中，将芯片102与载板104接合以后，可再将载板104通过另一焊料120接合至散热板（radiator plate）130，从而完成功率模块的封装工艺。焊料120可为现有的焊料，或者可与前述的焊料110相同。
图3A、图3B与图3F是根据第三实施例而绘示的一种封装结构制作方法的流程剖视图。
参照图3A，封装结构的制作方法包括以下步骤。首先，提供芯片202与载板204，接着在芯片202与载板204之间配置焊料210。焊料210包括锌基金属层212、铜金属膜214以及贵金属膜216。此外，芯片202上还可以形成一层金属层201；载板204的上下表面处也可配置有金属层203与金属层205。
芯片202、载板204、焊料210（锌基金属层212、铜金属膜214以及贵金属膜216）、金属层201、金属层203与金属层205可与第二实施例中对应者相同，于此不再重述。
第三实施例与第二实施例的差异在于，加热焊料210之前，还在载板204上形成配置于焊料210四周围的高熔点金属层209。
在本说明书中，「高熔点金属」意指熔点比锌高的金属，即为熔点大于300℃的金属。在各种实施例中，高熔点金属层209的材料可为金、银或铜。在第三实施例中，高熔点金属层209的材料为纯铜。
参照图3B，对焊料210及高熔点金属层209加热，加热的温度与方式，以及加热过程中焊料210与锌基金属层212所含的各种金属元素的相互反应可与第二实施例中所述者相同，于此不再重述。值得注意的是，由于高熔点金属层209的熔点大于加热温度，因此在加热过程中不会与焊料210中的任何金属层进行反应。
加热以后，焊料210转变为接点结构211。接点结构211包括锌基金属层212以及介金属层218。介金属层218完全包围锌基金属层212，且其材料可与第二实施例中所述的介金属层118相同。接合以后，高熔点金属层209作为止动构件，可以在封装结构承受剪力的时候防止芯片202歪斜或倾倒及作为锌基接点应力的释放层（Stress free layer）。
为了更清楚呈现发明概念，在图3C中呈现了接点结构211与高熔点金属层209的立体示意图，而图3D与图3E分别为沿着图3C中的CC’线与DD’线的剖视图。
如图3C至图3E所示，将焊料210用于接合工艺时，焊料210因受热而转变为接点结构211。接点结构211包括锌基金属层212以及介金属层218。介金属层218由锌与贵金属所组成，且由图3D与图3E可以看出，介金属层218完全覆盖锌基金属层212的表面212b。在本实施例中，介金属层218的材料例如为AuZn、AuZn3、AuZn8、Au5Zn3、Au3Zn7、AuZn2、AuZn7、AuZn4。此外，在贵金属膜的材料为银或钯的其他实施例中，介金属层的材料可为AgZn、AgZn3、Ag5Zn8、PdZn、Pd2Zn、PdZn2、Pd2Zn8。高熔点金属层209配置在介金属层218的四周围。
参照图3F，在芯片202与载板204为功率模块的一部分的实施例中，将芯片202与载板204接合以后，可以再将载板204通过另一焊料220接合至散热板230，从而完成功率模块的封装工艺。焊料220可为现有的焊料，或者可与前述的焊料210相同。
以上，已根据本发明的概念说明了多种实施例。应指出，本发明不特别限制接点结构的形状或尺寸。然而，锌基金属本身即为一种可耐受高温的焊料，因此，在一些特定的实施型态中，可能会将其应用在功率芯片的接合。此时，接点结构可为片状。片状的接点结构可形成大面积接点，适于将功率芯片贴附至DBC基板或将DBC基板贴附至散热板。
综上所述，在以上各实施例中，在锌基金属层的表面形成铜金属膜与贵金属膜来作为焊料，而具有良好的储存安定性。将此焊料运用于半导体元件组装时，可降低预期工艺的峰温（例如可降低至280°C以下）。焊料中的锌与贵金属反应，形成介金属层。介金属层作为扩散障碍层，可防止锌与载板或芯片上的铜反应生成CuZn5与Cu5Zn8介金属（这种铜锌系介金属很不安定，容易降低接点的可靠度），还可抑制界面缺陷产生，形成可靠的耐高温接点，有效提升功率模块的长期可靠度。
虽然已结合以上实施例公开了本发明，然而其并非用以限定本发明，任何所属技术领域中熟悉此技术者，在不脱离本发明的精神和范围内，可作些许的更动与润饰，故本发明的保护范围应以附上的权利要求所界定的为准。

Claims (7)

1.一种接点结构，包括：
锌基金属层，具有表面，其中该锌基金属层包含铜材料；以及
介金属层，由锌与贵金属的合金所组成，该介金属层完全覆盖该锌基金属层的该表面，其中该贵金属包括金、银或钯。
2.如权利要求1所述的接点结构，其中该锌基金属层的材料包括锌、锌锡合金、锌铝合金或锌铝铜合金，且在该锌基金属层中，锌占的比例大于90wt％。
3.如权利要求1所述的接点结构，其中该介金属层的材料包括AuZn、AuZn3、AuZn8、Au5Zn3、Au3Zn7、AuZn2、AuZn7、AuZn4、AgZn、AgZn3、Ag5Zn8、PdZn、Pd2Zn、PdZn2、Pd2Zn8。
4.如权利要求1所述的接点结构，还包括高熔点金属层，配置于该介金属层的四周围。
5.一种接点结构的制作方法，包括：
提供焊料，该焊料包括：
锌基金属层，具有表面；
铜金属膜，完全覆盖该锌基金属层的该表面；以及
贵金属膜，完全包覆该铜金属膜，其中该贵金属膜的材料包括金、银或钯；以及
加热该焊料，使该铜金属膜所含的铜扩散进入该锌基金属层，且使该贵金属膜所含的贵金属与该锌基金属层所含的锌反应，而由该贵金属与锌形成完全包覆该锌基金属层的介金属层，其中该介金属层为由锌与贵金属的合金所组成，该锌基金属层包含铜材料。
6.如权利要求5所述的接点结构的制作方法，其中该锌基金属层的材料包括锌、锌锡合金、锌铝合金或锌铝铜合金，且在该锌基金属层中，锌占的比例大于90wt％。
7.如权利要求5所述的接点结构的制作方法，其中该介金属层的材料包括AuZn、AuZn3、AuZn8、Au5Zn3、Au3Zn7、AuZn2、AuZn7、AuZn4、AgZn、AgZn3、Ag5Zn8、PdZn、Pd2Zn、PdZn2、Pd2Zn8。
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